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1. 发明授权

US08488291B2 Zinc-oxide surge arrester for high-temperature operation 有权
标题翻译：氧化锌避雷器用于高温运行
公开(公告)号：US08488291B2
公开(公告)日：2013-07-16
申请号：US13023624
申请日：2011-02-09
申请人： Ching-Hohn Lien , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
发明人： Ching-Hohn Lien , Jie-An Zhu , Zhi-Xian Xu , Xing-Xiang Huang , Ting-Yi Fang
IPC分类号： H02H1/00
CPC分类号： H01C7/112 , H01C7/10 , H01C7/12
摘要： A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.
摘要翻译：用于高温操作的ZnO避雷器的特征在于，其ZnO晶粒之间的晶界层包含基于BaTiO 3的正温度系数热敏电阻材料，其在整个晶界层中占据10-85mol％，并且当工作温度升温时，晶界层中的正温度系数热敏电阻材料的电阻随着升温而急剧上升，从而补偿或部分补偿由升温引起的晶界层中的组分的电阻降低，从而使电阻的ZnO避雷器中的晶界层更加独立于温度。因此，ZnO避雷器适用于最高工作温度高于125℃或甚至高于150℃的操作。

2. 发明申请

US20100117271A1 Process for producing zinc oxide varistor 审中-公开
标题翻译：生产氧化锌压敏电阻的工艺
公开(公告)号：US20100117271A1
公开(公告)日：2010-05-13
申请号：US12458369
申请日：2009-07-09
申请人： Ching-Hohn Lien , Jie-An Zhu , Cheng-Tsung Kuo , Jiu-Nan Lin , Zhi-Xian Xu , Hong-Zong Xu , Ting-Yi Fang , Xing-Xiang Huang
发明人： Ching-Hohn Lien , Jie-An Zhu , Cheng-Tsung Kuo , Jiu-Nan Lin , Zhi-Xian Xu , Hong-Zong Xu , Ting-Yi Fang , Xing-Xiang Huang
IPC分类号： B28B1/00
CPC分类号： H01C7/112 , C04B35/453 , C04B2235/32 , C04B2235/3203 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3262 , C04B2235/3267 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/44 , C04B2235/442 , C04B2235/95
摘要： A process for producing zinc oxide varistors is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintering material through two independent procedures, so that the doped zinc oxide and the high-impedance sintering material are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess one or more of varistor properties, thermistor properties, capacitor properties, inductor properties, piezoelectricity and magnetism.
摘要翻译：一种生产氧化锌压敏电阻的方法是通过两个独立的步骤，用高阻抗烧结材料进行氧化锌的掺杂和氧化锌晶粒的烧结，使掺杂的氧化锌和高阻抗烧结材料充分混合以预定的比例，然后通过低温烧结（低于900℃）通过常规技术制造氧化锌变阻器; 所得到的氧化锌变阻器可以使用纯银作为内部电极，特别是具有变阻器特性，热敏电阻特性，电容器特性，电感特性，压电性和磁性中的一种或多种。

3. 发明授权

US08263432B2 Material composition having core-shell microstructure used for varistor 有权
标题翻译：具有用于变阻器的核 - 壳微结构的材料组成
公开(公告)号：US08263432B2
公开(公告)日：2012-09-11
申请号：US11798800
申请日：2007-05-17
申请人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nan Lin , Jie-An Zhu , Li-Yun Zhang , Wei-Cheng Lien
发明人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nan Lin , Jie-An Zhu , Li-Yun Zhang , Wei-Cheng Lien
IPC分类号： H01L21/02
CPC分类号： H01C7/1006 , H01C7/108 , H01C7/112 , H01C7/115 , H01C7/18 , H01L27/0288 , H01L28/20 , Y10T428/2985 , Y10T428/2989 , Y10T428/2991
摘要： A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.
摘要翻译：具有适于制造具有优异电性能的变阻器的核 - 壳微结构的材料组合物，所述材料组合物的芯 - 壳微结构至少包括由导电或半导电材料制成的芯结构和制成的壳形结构从玻璃材料包裹芯结构，并且可以通过精确控制芯结构的晶粒尺寸和绝缘体的厚度和绝缘电阻来确定和指定压敏电阻在低温烧结过程中的电性能层的材料组成的贝壳结构。

4. 发明授权

US07724124B2 Ceramic material used for protection against electrical overstress and low-capacitance multilayer chip varistor using the same 有权
标题翻译：陶瓷材料用于防过电压保护和低电容多层片式压敏电阻的使用
公开(公告)号：US07724124B2
公开(公告)日：2010-05-25
申请号：US11704987
申请日：2007-02-12
申请人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang , Xing-Guang Huang , Wei-Cheng Lien
发明人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang , Xing-Guang Huang , Wei-Cheng Lien
IPC分类号： H01C7/10
CPC分类号： H01C7/105 , B82Y30/00 , C03C14/006 , C03C2214/05 , C03C2214/08 , C03C2214/16 , C04B35/453 , C04B35/46 , C04B35/4682 , C04B35/47 , C04B35/565 , C04B35/624 , C04B35/62805 , C04B35/62807 , C04B35/62886 , C04B2235/3275 , C04B2235/3284 , C04B2235/3298 , C04B2235/36 , C04B2235/405 , C04B2235/408 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/6025 , H01C7/12
摘要： A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 μm, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.
摘要翻译：低容量多层片式压敏电阻在1MHz时的电容低于0.5pF，具有耐8千伏静电电击的数千倍的特性，其中包括一陶瓷主体，外电极位于陶瓷主体的两端主体和内部电极; 陶瓷主体包含3〜50重量％的无机玻璃和粒径大于0.1μm的50〜97重量％的半导电性或导电性粒子，无机玻璃膜层覆盖半导电性或导电颗粒，其中无机玻璃膜含有小于1微米的亚微米或纳米的半导电或导电颗粒，并且半导体或导电颗粒所含的量小于无机玻璃的20重量％。

5. 发明申请

US20080286898A1 Material composition having core-shell microstructure used for varistor 有权
标题翻译：具有用于变阻器的核 - 壳微结构的材料组成
公开(公告)号：US20080286898A1
公开(公告)日：2008-11-20
申请号：US11798800
申请日：2007-05-17
申请人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun Nan Lin , Jie-An Zhu , Li-Yun Zhang , Wei-Cheng Lien
发明人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun Nan Lin , Jie-An Zhu , Li-Yun Zhang , Wei-Cheng Lien
IPC分类号： H01L21/02 , H01B1/02
CPC分类号： H01C7/1006 , H01C7/108 , H01C7/112 , H01C7/115 , H01C7/18 , H01L27/0288 , H01L28/20 , Y10T428/2985 , Y10T428/2989 , Y10T428/2991
摘要： A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.
摘要翻译：具有适于制造具有优异电性能的变阻器的核 - 壳微结构的材料组合物，所述材料组合物的芯 - 壳微结构至少包括由导电或半导电材料制成的芯结构和制成的壳形结构从玻璃材料包裹芯结构，并且可以通过精确控制芯结构的晶粒尺寸和绝缘体的厚度和绝缘电阻来确定和指定压敏电阻在低温烧结过程中的电性能层的材料组成的贝壳结构。

6. 发明申请

US20080191834A1 Ceramic material used for protection against electrical overstress and low-capacitance multilayer chip varistor using the same 有权
标题翻译：陶瓷材料用于防过电压保护和低电容多层片式压敏电阻的使用
公开(公告)号：US20080191834A1
公开(公告)日：2008-08-14
申请号：US11704987
申请日：2007-02-12
申请人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang , Xing-Guang Huang , Wei-Cheng Lien
发明人： Ching-Hohn Lien , Cheng-Tsung Kuo , Jun-Nun Lin , Jie-An Zhu , Li-Yun Zhang , Xing-Guang Huang , Wei-Cheng Lien
IPC分类号： H01C7/12 , C03C11/00
CPC分类号： H01C7/105 , B82Y30/00 , C03C14/006 , C03C2214/05 , C03C2214/08 , C03C2214/16 , C04B35/453 , C04B35/46 , C04B35/4682 , C04B35/47 , C04B35/565 , C04B35/624 , C04B35/62805 , C04B35/62807 , C04B35/62886 , C04B2235/3275 , C04B2235/3284 , C04B2235/3298 , C04B2235/36 , C04B2235/405 , C04B2235/408 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/6025 , H01C7/12
摘要： A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 μm, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.
摘要翻译：低容量多层片式压敏电阻在1MHz时的电容低于0.5pF，具有耐8千伏静电电击的数千倍的特性，其中包括一陶瓷主体，外电极位于陶瓷主体的两端主体和内部电极; 陶瓷主体包括3〜50重量％的无机玻璃和50〜97重量％的粒径大于0.1微米的半导体或导电颗粒，无机玻璃膜层覆盖半导体或导电颗粒，其中无机玻璃膜含有小于1微米的亚微米或纳米的半导电或导电颗粒，并且半导体或导电颗粒所含的量小于无机玻璃的20重量％。

7. 发明授权

US08363382B2 Structure of multilayer ceramic device 失效
标题翻译：多层陶瓷器件的结构
公开(公告)号：US08363382B2
公开(公告)日：2013-01-29
申请号：US13024470
申请日：2011-02-10
申请人： Ching-Hohn Lien , Hong-Zong Xu
发明人： Ching-Hohn Lien , Hong-Zong Xu
IPC分类号： H01G4/005
CPC分类号： H01G4/005 , H01G4/30 , Y10T428/12056
摘要： A multilayer ceramic device comprises a laminated ceramic body having opposite end surfaces, a pair of conductive electrodes each respectively attached to one end surface of the laminated ceramic body and a plurality of alternately staggered internal electrodes within the laminated ceramic body configured in an alternating manner and each electrically connected to the corresponding conductive electrodes respectively; each conductive electrodes of the multilayer ceramic device is further covered with a solder paste layer so that the multilayer ceramic device is thus made without any plating step and no need of treating waste liquid nickel or waste liquid tin as well as no problem of environmental pollution caused by plating solution, thereby lowering manufacturing costs and reducing processing time.
摘要翻译：多层陶瓷器件包括具有相对端面的层叠陶瓷体，分别安装在层叠陶瓷体的一个端面上的一对导电电极和层叠陶瓷体内的多个交错交错的内部电极，其以交替的方式配置和各自电连接到相应的导电电极; 多层陶瓷器件的每个导电电极进一步用焊膏层覆盖，使得多层陶瓷器件因此不经任何电镀步骤而制成，并且不需要处理废液镍或废液锡，并且没有引起环境污染的问题通过电镀液，降低制造成本，缩短加工时间。

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