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1. 发明授权

US08501552B2 Pixel structure and method of fabricating the same 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US08501552B2
公开(公告)日：2013-08-06
申请号：US13369272
申请日：2012-02-08
申请人： Chin-Tzu Kao , Yu-Tsung Lee
发明人： Chin-Tzu Kao , Yu-Tsung Lee
IPC分类号： H01L21/84
CPC分类号： H01L27/1288
摘要： A pixel structure includes a substrate; a scan line; a gate electrode; an insulating layer disposed on the scan line, the gate electrode and the substrate; a channel and a data line disposed on the insulating layer; a source electrode and a drain electrode disposed on the channel; a passivation layer; a pixel electrode and a connecting electrode. The data line does not overlap the scan line. The passivation layer disposed on the source electrode and the drain electrode includes a first contact hole partially exposing the drain electrode, and a plurality of second contact holes partially exposing the data line or the scan line. The pixel electrode disposed on the passivation layer is electrically connected to the drain electrode through the first contact hole. Furthermore, the connecting electrode disposed on the passivation layer is electrically connected to the data line or the scan line through the second contact holes.
摘要翻译：像素结构包括基板; 扫描线栅电极; 布置在所述扫描线上的绝缘层，所述栅电极和所述基板; 设置在绝缘层上的通道和数据线; 设置在通道上的源电极和漏电极; 钝化层; 像素电极和连接电极。数据线与扫描线不重叠。设置在源电极和漏电极上的钝化层包括部分地暴露漏电极的第一接触孔和部分地暴露数据线或扫描线的多个第二接触孔。设置在钝化层上的像素电极通过第一接触孔电连接到漏电极。此外，设置在钝化层上的连接电极通过第二接触孔电连接到数据线或扫描线。

2. 发明申请

US20130175532A1 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US20130175532A1
公开(公告)日：2013-07-11
申请号：US13454088
申请日：2012-04-24
申请人： Chi-Ming Chiou , Yu-Tsung Lee , Chin-Tzu Kao
发明人： Chi-Ming Chiou , Yu-Tsung Lee , Chin-Tzu Kao
IPC分类号： H01L29/786 , H01L21/02
CPC分类号： H01L27/1288 , H01L27/124 , H01L29/66742 , H01L29/66765
摘要： A method for manufacturing a pixel structure is provided. A thin film transistor is formed on a substrate and an insulating layer is formed to cover the substrate and the thin film transistor. The insulating layer is patterned by a half-tone mask to form a protruding pattern, a sunken pattern connecting the protruding pattern, and a contact window inside the sunken pattern. A transparent conductive layer is formed to cover the protruding pattern and the sunken pattern, and filled in the contact window. A passivation layer is formed to cover the transparent conductive layer. A pixel electrode pattern is formed from the transparent conductive layer by removing a part of the passivation layer located on the protruding pattern, a part of the transparent conductive layer on the protruding pattern, and a part of the passivation layer located within the contact window. A pixel structure manufactured by the method is provided.
摘要翻译：提供了一种用于制造像素结构的方法。在基板上形成薄膜晶体管，形成绝缘层以覆盖基板和薄膜晶体管。通过半色调掩模对绝缘层进行图案化以形成突出图案，连接突出图案的凹陷图案和凹陷图案内的接触窗口。形成透明导电层以覆盖突出图案和凹陷图案，并填充在接触窗中。形成钝化层以覆盖透明导电层。通过去除位于突出图案上的钝化层的一部分，突出图案上的透明导电层的一部分和位于接触窗内部的钝化层的一部分，由透明导电层形成像素电极图案。提供了通过该方法制造的像素结构。

3. 发明申请

US20130119385A1 PIXEL STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：像素结构及其制作方法
公开(公告)号：US20130119385A1
公开(公告)日：2013-05-16
申请号：US13369272
申请日：2012-02-08
申请人： Chin-Tzu Kao , Yu-Tsung Lee
发明人： Chin-Tzu Kao , Yu-Tsung Lee
IPC分类号： H01L33/02
CPC分类号： H01L27/1288
摘要： A pixel structure includes a substrate; a scan line; a gate electrode; an insulating layer disposed on the scan line, the gate electrode and the substrate; a channel and a data line disposed on the insulating layer; a source electrode and a drain electrode disposed on the channel; a passivation layer; a pixel electrode and a connecting electrode. The data line does not overlap the scan line. The passivation layer disposed on the source electrode and the drain electrode includes a first contact hole partially exposing the drain electrode, and a plurality of second contact holes partially exposing the data line or the scan line. The pixel electrode disposed on the passivation layer is electrically connected to the drain electrode through the first contact hole. Furthermore, the connecting electrode disposed on the passivation layer is electrically connected to the data line or the scan line through the second contact holes.
摘要翻译：像素结构包括基板; 扫描线栅电极; 布置在所述扫描线上的绝缘层，所述栅电极和所述基板; 设置在绝缘层上的通道和数据线; 设置在通道上的源电极和漏电极; 钝化层; 像素电极和连接电极。数据线与扫描线不重叠。设置在源电极和漏电极上的钝化层包括部分地暴露漏电极的第一接触孔和部分地暴露数据线或扫描线的多个第二接触孔。设置在钝化层上的像素电极通过第一接触孔电连接到漏电极。此外，设置在钝化层上的连接电极通过第二接触孔电连接到数据线或扫描线。

4. 发明授权

US08603844B2 Pixel structure and manufacturing method thereof 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US08603844B2
公开(公告)日：2013-12-10
申请号：US13454088
申请日：2012-04-24
申请人： Chi-Ming Chiou , Yu-Tsung Lee , Chin-Tzu Kao
发明人： Chi-Ming Chiou , Yu-Tsung Lee , Chin-Tzu Kao
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/124 , H01L29/66742 , H01L29/66765
摘要： A method for manufacturing a pixel structure is provided. A thin film transistor is formed on a substrate and an insulating layer is formed to cover the substrate and the thin film transistor. The insulating layer is patterned by a half-tone mask to form a protruding pattern, a sunken pattern connecting the protruding pattern, and a contact window inside the sunken pattern. A transparent conductive layer is formed to cover the protruding pattern and the sunken pattern, and filled in the contact window. A passivation layer is formed to cover the transparent conductive layer. A pixel electrode pattern is formed from the transparent conductive layer by removing a part of the passivation layer located on the protruding pattern, a part of the transparent conductive layer on the protruding pattern, and a part of the passivation layer located within the contact window. A pixel structure manufactured by the method is provided.
摘要翻译：提供了一种用于制造像素结构的方法。在基板上形成薄膜晶体管，形成绝缘层以覆盖基板和薄膜晶体管。通过半色调掩模对绝缘层进行图案化以形成突出图案，连接突出图案的凹陷图案和凹陷图案内的接触窗口。形成透明导电层以覆盖突出图案和凹陷图案，并填充在接触窗中。形成钝化层以覆盖透明导电层。通过去除位于突出图案上的钝化层的一部分，突出图案上的透明导电层的一部分和位于接触窗内部的钝化层的一部分，由透明导电层形成像素电极图案。提供了通过该方法制造的像素结构。

5. 发明申请

US20070238228A1 Manufacturing method for thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US20070238228A1
公开(公告)日：2007-10-11
申请号：US11393436
申请日：2006-03-29
申请人： Ta-Jung Su , Chin-Tzu Kao , Chia-Che Hsu
发明人： Ta-Jung Su , Chin-Tzu Kao , Chia-Che Hsu
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.
摘要翻译：提供了薄膜晶体管（TFT）的制造方法。在制造的TFT中，在源极结构形成漏极结构和沟道结构之后，不去除第一光致抗蚀剂层，并且在形成半导体结构的第一光致抗蚀剂层上形成第二光致抗蚀剂。此外，使用n型非晶硅，多晶硅或有机金属化合物代替常规金属以形成源极和漏极结构，以便减少TFT的制造步骤数量。

6. 发明授权

US07071045B2 Process of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US07071045B2
公开(公告)日：2006-07-04
申请号：US10839170
申请日：2004-05-06
申请人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
发明人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/66765
摘要： A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.
摘要翻译：制造薄膜晶体管的工艺包括通过第一曝光和显影工艺在衬底上形成栅极线。通过第二曝光和显影处理形成源电极，漏电极和半导体沟道。通过第三曝光和显影处理形成岛状晶体管。通过第四曝光和显影处理形成其中具有接触孔的保护层。通过第五曝光和显影处理形成像素电极以连接到接触孔。

7. 发明授权

US08835206B2 Pixel structure, array substrate and method of fabricating the same 有权
标题翻译：像素结构，阵列基板及其制造方法
公开(公告)号：US08835206B2
公开(公告)日：2014-09-16
申请号：US13537025
申请日：2012-06-28
申请人： Chin-Tzu Kao , Jin-Chuan Kuo , Ya-Ju Lu
发明人： Chin-Tzu Kao , Jin-Chuan Kuo , Ya-Ju Lu
IPC分类号： H01L29/10 , G02F1/136 , H01L29/45 , H01L27/12
CPC分类号： H01L27/124 , H01L29/458
摘要： The present invention provides a pixel structure including a substrate, a first metal pattern layer, an insulating layer, a second metal pattern layer, a passivation layer, and a conductive protection layer. The substrate has at least one pixel region. The first patterned metal layer is disposed on the substrate, and has a top surface. The insulating layer is disposed on the first patterned metal layer and the substrate, and is in contact with the top surface of the first patterned metal layer. The second patterned metal layer is disposed on the insulating layer in the pixel region, and includes a source and a drain. The passivation layer is disposed on the second patterned metal layer and the insulating layer. A top surface of the source is in contact with the passivation layer, and the conductive protection layer is disposed on the drain.
摘要翻译：本发明提供一种像素结构，其包括基板，第一金属图案层，绝缘层，第二金属图案层，钝化层和导电保护层。衬底具有至少一个像素区域。第一图案化金属层设置在基板上，并且具有顶表面。绝缘层设置在第一图案化金属层和基板上，并且与第一图案化金属层的顶表面接触。第二图案化金属层设置在像素区域中的绝缘层上，并且包括源极和漏极。钝化层设置在第二图案化金属层和绝缘层上。源极的顶表面与钝化层接触，并且导电保护层设置在漏极上。

8. 发明申请

US20130175531A1 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：像素结构及其制造方法
公开(公告)号：US20130175531A1
公开(公告)日：2013-07-11
申请号：US13437003
申请日：2012-04-02
申请人： Kuo-Wei Wu , Chin-Tzu Kao
发明人： Kuo-Wei Wu , Chin-Tzu Kao
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78618 , H01L27/124 , H01L29/78696
摘要： A pixel structure includes a substrate, a gate line, a data line, a semiconductor pattern, a non-metal source electrode pattern, a non-metal drain electrode pattern, and a pixel electrode. The gate line and the data line are disposed on the substrate. The semiconductor pattern is disposed on the gate line, and the semiconductor pattern overlaps two corresponding edges of the gate line along a vertical projective direction. The non-metal source electrode pattern and the non-metal drain electrode pattern are disposed on the semiconductor pattern. The non-metal source electrode pattern and the non-metal drain electrode pattern are respectively disposed on two corresponding edges of the gate line. The non-metal source electrode pattern is partially disposed between the data line and the gate line. The pixel electrode is electrically connected to the non-metal drain electrode pattern.
摘要翻译：像素结构包括衬底，栅极线，数据线，半导体图案，非金属源电极图案，非金属漏电极图案和像素电极。栅极线和数据线设置在基板上。半导体图案设置在栅极线上，并且半导体图案沿着垂直投影方向与栅极线的两个对应边缘重叠。非金属源电极图案和非金属漏电极图案设置在半导体图案上。非金属源电极图案和非金属漏电极图案分别设置在栅极线的两个对应边缘上。非金属源电极图案部分地设置在数据线和栅极线之间。像素电极电连接到非金属漏电极图案。

9. 发明授权

US07754509B2 Manufacturing method for thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07754509B2
公开(公告)日：2010-07-13
申请号：US11393436
申请日：2006-03-29
申请人： Ta-Jung Su , Chin-Tzu Kao , Chia-Che Hsu
发明人： Ta-Jung Su , Chin-Tzu Kao , Chia-Che Hsu
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.
摘要翻译：提供了薄膜晶体管（TFT）的制造方法。在制造的TFT中，在源极结构形成漏极结构和沟道结构之后，不去除第一光致抗蚀剂层，并且在形成半导体结构的第一光致抗蚀剂层上形成第二光致抗蚀剂。此外，使用n型非晶硅，多晶硅或有机金属化合物代替常规金属以形成源极和漏极结构，以便减少TFT的制造步骤数量。

10. 发明申请

US20050250270A1 Process of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US20050250270A1
公开(公告)日：2005-11-10
申请号：US10839170
申请日：2004-05-06
申请人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
发明人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
IPC分类号： H01L21/336 , H01L21/77 , H01L31/113
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/66765
摘要： A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.
摘要翻译：制造薄膜晶体管的工艺包括通过第一曝光和显影工艺在衬底上形成栅极线。通过第二曝光和显影处理形成源电极，漏电极和半导体沟道。通过第三曝光和显影处理形成岛状晶体管。通过第四曝光和显影处理形成其中具有接触孔的保护层。通过第五曝光和显影处理形成像素电极以连接到接触孔。

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