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1. 发明授权

US07008732B2 Photomask pattern 有权
标题翻译：光掩模图案
公开(公告)号：US07008732B2
公开(公告)日：2006-03-07
申请号：US10457978
申请日：2003-06-09
申请人： Chin-Lung Lin , Chuen-Huei Yang , Wen-Tien Hung
发明人： Chin-Lung Lin , Chuen-Huei Yang , Wen-Tien Hung
IPC分类号： G03F9/00
CPC分类号： G03F1/36 , G03F1/26
摘要： A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.
摘要翻译：提供了基板上的光掩模图案。光掩模图案包括主图案和子分辨率辅助特征。子分辨率辅助功能位于主图案的两侧。此外，子分辨率辅助特征包括第一辅助特征和第二辅助特征。第一辅助功能形成在主模式附近，第二辅助功能远离主模式形成，但与第一辅助功能相邻。第一辅助特征与主图案之间存在180°的相位差。类似地，在第二辅助特征和第一辅助特征之间存在180°的相位差。由于主图案由反相辅助功能界定，因此增加了光掩模的曝光分辨率。

2. 发明授权

US07141337B2 Phase shift mask 有权
标题翻译：相移掩模
公开(公告)号：US07141337B2
公开(公告)日：2006-11-28
申请号：US10249372
申请日：2003-04-03
申请人： Chin-Lung Lin , Chuen-Huei Yang , Ming-Jui Chen , Wen-Tien Hung
发明人： Chin-Lung Lin , Chuen-Huei Yang , Ming-Jui Chen , Wen-Tien Hung
IPC分类号： G01F9/00
CPC分类号： G03F1/34 , G03F1/30
摘要： A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.
摘要翻译：相移掩模包括透明衬底，半致密图案和致密图案。半致密图案形成在包括相继排列的多个相移区域和非相移区域的透明基板上。密集图案形成在包括多个非相移区域，相移区域和不透明区域的透明基板上。

3. 发明申请

US20050112473A1 Photomask for enhancing contrast 审中-公开
标题翻译：用于增强对比度的光掩模
公开(公告)号：US20050112473A1
公开(公告)日：2005-05-26
申请号：US10721153
申请日：2003-11-24
申请人： Wen-Tien Hung , Chin-Lung Lin , Chuen-Huei Yang
发明人： Wen-Tien Hung , Chin-Lung Lin , Chuen-Huei Yang
IPC分类号： G03C5/00 , G03F1/00 , G03F1/14 , G03F9/00
CPC分类号： G03F1/29 , G03F1/32
摘要： The present invention provides a photomask comprising a substrate and a plurality of shielding patterns. The substrate comprising a plurality of shielding regions and a plurality of transparent regions, while each transparent region is disposed between two adjacent shielding regions and has one depression. The depression and the shielding region share a same edge and a sidewall of the depression is aligned with a sidewall of the shielding pattern.
摘要翻译：本发明提供一种光掩模，其包括基板和多个屏蔽图案。所述基板包括多个屏蔽区域和多个透明区域，而每个透明区域设置在两个相邻的屏蔽区域之间并且具有一个凹陷部。凹陷和屏蔽区域共享相同的边缘，并且凹陷的侧壁与屏蔽图案的侧壁对准。

4. 发明申请

US20050100829A1 LITHOGRAPHY METHOD 有权
标题翻译： LITHOGRAPHY方法
公开(公告)号：US20050100829A1
公开(公告)日：2005-05-12
申请号：US10605968
申请日：2003-11-10
申请人： Chin-Lung Lin , Chuen Huei Yang , Ming-Jui Chen , Venson Lee
发明人： Chin-Lung Lin , Chuen Huei Yang , Ming-Jui Chen , Venson Lee
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70283 , G03F1/34
摘要： A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.
摘要翻译：一种用于在光致抗蚀剂层中形成多个图案的光刻方法。提供了包括多个透明主要特征，多个第一相移透明区域和多个第二相移透明区域的相移掩模。每个透明主要特征被第一相移透明区域包围，而第二相移透明区域沿着透明主要特征的周边连续交错。第一相移透明区域中的每一个相对于第二相移透明区域中的每一个具有相移。执行曝光处理以用光照射相移掩模，使得在光致抗蚀剂层中形成对应于透明主要特征的图案。

5. 发明授权

US07312020B2 Lithography method 有权
标题翻译：平版印刷法
公开(公告)号：US07312020B2
公开(公告)日：2007-12-25
申请号：US10605968
申请日：2003-11-10
申请人： Chin-Lung Lin , Chuen Huei Yang , Ming-Jui Chen , Venson Lee
发明人： Chin-Lung Lin , Chuen Huei Yang , Ming-Jui Chen , Venson Lee
IPC分类号： G03F1/00
CPC分类号： G03F7/70283 , G03F1/34
摘要： A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.
摘要翻译：一种用于在光致抗蚀剂层中形成多个图案的光刻方法。提供了包括多个透明主要特征，多个第一相移透明区域和多个第二相移透明区域的相移掩模。每个透明主要特征被第一相移透明区域包围，而第二相移透明区域沿着透明主要特征的周边连续交错。第一相移透明区域中的每一个相对于第二相移透明区域中的每一个具有相移。执行曝光处理以用光照射相移掩模，使得在光致抗蚀剂层中形成对应于透明主要特征的图案。

6. 发明申请

US20090001596A1 CONDUCTIVE LINE STRUCTURE 审中-公开
标题翻译：导电线结构
公开(公告)号：US20090001596A1
公开(公告)日：2009-01-01
申请号：US12211079
申请日：2008-09-15
申请人： Chin-Lung Lin , Yun-Sheng Huang , Hung-Chin Thuang , Chien-Fu Lee
发明人： Chin-Lung Lin , Yun-Sheng Huang , Hung-Chin Thuang , Chien-Fu Lee
IPC分类号： H01L23/48
CPC分类号： G03F1/36
摘要： A conductive line structure is defined with an OPC photomask and is suitably applied to a semiconductor device. The conductive line structure includes a first conductive line and a second conductive line. The first conductive line includes a first line body oriented in the X-direction of a plane coordinate system, a first end portion at one end of the first line body slanting toward the Y-direction of the plane coordinate system, and a second end portion at the other end of the first line body also slanting toward the Y-direction. The second conductive line arranged in an end-to-end manner with the first conductive line includes a second line body oriented in the X-direction, a third end portion at one end of the second line body slanting toward the Y-direction, and a fourth end portion at the other end of the second line body also slanting toward the Y-direction.
摘要翻译：导电线结构由OPC光掩模限定，适用于半导体器件。导线结构包括第一导线和第二导线。第一导线包括沿着平面坐标系的X方向定向的第一线体，第一线体的一端朝向平面坐标系的Y方向倾斜的第一端部，以及第二端部在第一线体的另一端也向Y方向倾斜。与第一导线以端对端的方式布置的第二导线包括沿X方向定向的第二线体，在第二线体的一端朝向Y方向倾斜的第三端部，以及第二线体的另一端的第四端部也向Y方向倾斜。

7. 发明授权

US5522892A Breast augmentation device 失效
标题翻译：乳房增大装置
公开(公告)号：US5522892A
公开(公告)日：1996-06-04
申请号：US411506
申请日：1995-03-28
申请人： Chin-Lung Lin
发明人： Chin-Lung Lin
IPC分类号： A41C3/14 , A61F2/00 , A61F2/50 , A61F2/52 , A41C3/00 , A41C3/10
CPC分类号： A61F2/52 , A41C3/144 , A41B2400/20 , A61F2002/5007 , A61F2002/526 , A61F2250/0036 , A61F2250/0037
摘要： A breast augmentation device made from flexible rubber, having a breast-shaped front part and a hollow, rounded rear part for covering over the breast, wherein the rear part has a plurality of elongated grooves with vent holes and a plurality of elongated ribs, each elongated groove having at least one end perpendicularly connected to the periphery of the orifice of the hollow, rounded rear part, each elongated rib having a center portion and two opposite ends extended from the center portion and perpendicularly connected to the periphery of the orifice, the height of each elongated rib reducing gradually from the respective center portion toward the respective opposite ends.
摘要翻译：一种由柔性橡胶制成的隆胸装置，其具有乳房形前部和用于覆盖在乳房上的中空的圆形后部，其中后部具有多个具有通气孔和多个细长肋条的细长槽，细长槽具有至少一个端部垂直地连接到中空的圆形后部的孔口的周边，每个细长肋条具有中心部分，两个相对端部从中心部分延伸并且垂直地连接到孔口的周边，每个细长肋的高度从相应的中心部分朝着相应的相对端逐渐减小。

8. 发明授权

US08251541B2 Tubeless light-emitting diode based lighting device 失效
标题翻译：无铅发光二极管照明装置
公开(公告)号：US08251541B2
公开(公告)日：2012-08-28
申请号：US12731535
申请日：2010-03-25
申请人： Chin-Lung Lin
发明人： Chin-Lung Lin
IPC分类号： F21S4/00
CPC分类号： F21V23/02 , F21S4/28 , F21V15/01 , F21V15/013 , F21V15/015 , F21V21/025 , F21V23/026 , F21V31/005 , F21V31/04 , F21Y2103/10 , F21Y2107/20 , F21Y2115/10
摘要： A tubeless light-emitting diode (LED) based lighting device includes at least one base, at least one LED lighting module, and at least one control circuit. The base includes a heat dissipation body. The LED lighting module is mounted to the base so that the base provides the LED lighting module with the functions of retention and heat dissipation. The control circuit is mounted to the base and is electrically connected to power wiring of the LED lighting module for ON/OFF switching of the LED lighting module and supplying of operation power. As such, a tubeless lighting device that emits light in a power saving manner and is constructed in a volume reduced manner is provided.
摘要翻译：基于无内燃发光二极管（LED）的照明装置包括至少一个基座，至少一个LED照明模块和至少一个控制电路。基座包括散热体。 LED照明模块安装在基座上，使得LED照明模块具有保持和散热的功能。控制电路安装在基座上，电连接到LED照明模块的电源线，用于LED照明模块的ON / OFF切换和供电操作。因此，提供了以省电方式发光并且以体积减小的方式构造的无内胎照明装置。

9. 发明申请

US20070015088A1 METHOD FOR LITHOGRAPHICALLY PRINTING TIGHTLY NESTED AND ISOLATED HOLE FEATURES USING DOUBLE EXPOSURE 审中-公开
标题翻译：使用双重曝光的光刻打印和分离孔特征的方法
公开(公告)号：US20070015088A1
公开(公告)日：2007-01-18
申请号：US11160923
申请日：2005-07-15
申请人： Chin-Lung Lin
发明人： Chin-Lung Lin
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/70425 , G03F1/36 , G03F1/70
摘要： A mask pattern including a group of small-pitched contact hole features with pitch being less than a predetermined value and isolated contact hole features with pitch being greater than the predetermined value is provided. The mask pattern is split into two sub-mask patterns, one having about half of the group of the small-pitched contact hole features and about half of the isolated contact hole features, the other having the rest of the group of the small-pitched contact hole features and the rest of the isolated contact hole features. Two phase shifting masks are formed, each phase shifting mask comprising one of the two sub-mask patterns and dummy features disposed in proximity to each of the contact hole features. Successively, each of the two phase shifting masks is positioned above the substrate. Each phase shifting mask is exposed successively on a photosensitive layer on the substrate.
摘要翻译：提供一种掩模图案，其包括一组具有小于预定值的小间距接触孔特征，并且具有间距大于预定值的隔离接触孔特征。掩模图案被分成两个子掩模图案，一个具有小组接触孔特征的一半的大约一半和隔离接触孔特征的大约一半，另一个具有小间距的组的其余部分接触孔特征和其余的隔离接触孔特征。形成两个相移掩模，每个相移掩模包括两个子掩模图案中的一个和设置在每个接触孔特征附近的虚拟特征。接着，两个相移掩模中的每一个位于衬底上方。每个相移掩模在基片上的感光层上连续曝光。

10. 发明授权

US07116815B2 Chrome-less mask inspection method 有权
标题翻译：无铬面罩检测方法
公开(公告)号：US07116815B2
公开(公告)日：2006-10-03
申请号：US10435566
申请日：2003-05-09
申请人： Ming-Jui Chen , Chin-Lung Lin
发明人： Ming-Jui Chen , Chin-Lung Lin
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G01N21/95607
摘要： A chrome-less mask inspection method is provided. The chrome-less mask at least includes a transparent region and a phase shift region. The method includes providing a database having a mask database corresponding to the chrome-less mask. The mask database further includes a frame line pattern having enclosed area and pattern that corresponds to enclosed area and pattern of the phase shift region of the chrome-less mask and a first inspection signal pattern generated by the mask database. An inspecting device is also provided to inspect a second inspection signal pattern from the chrome-less mask. Furthermore, scanning location of the second inspection signal pattern corresponds with scanning location of the first inspection signal pattern. Thereafter, the first inspection signal pattern and the second inspection signal pattern is compared and any differences are registered.
摘要翻译：提供无铬掩模检查方法。无铬掩模至少包括透明区域和相移区域。该方法包括提供具有对应于无铬掩模的掩模数据库的数据库。掩模数据库还包括具有与无铬掩模的相移区域的封闭区域和图案对应的封闭区域和图案的框线图案以及由掩模数据库生成的第一检查信号图案。还提供检查装置以从无铬掩模检查第二检查信号图案。此外，第二检查信号图案的扫描位置对应于第一检查信号图案的扫描位置。此后，比较第一检查信号图案和第二检查信号图案，并记录任何差异。

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