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    • 2. 发明申请
    • SEMICONDUCTOR DEVICE HAVING EPITAXIAL STRUCTURES
    • 具有外延结构的半导体器件
    • US20130026538A1
    • 2013-01-31
    • US13189570
    • 2011-07-25
    • Chin-I LiaoTeng-Chun HsuanI-Ming LaiChin-Cheng Chien
    • Chin-I LiaoTeng-Chun HsuanI-Ming LaiChin-Cheng Chien
    • H01L29/165H01L29/78
    • H01L29/165H01L29/66628H01L29/66636H01L29/7848
    • A semiconductor device having epitaxial structures includes a gate structure positioned on a substrate, epitaxial structures formed in the substrate at two sides of the gate structure, and an undoped cap layer formed on the epitaxial structures. The epitaxial structures include a dopant, a first semiconductor material having a first lattice constant, and a second semiconductor material having a second lattice constant, and the second lattice constant is larger than the first lattice constant. The undoped cap layer also includes the first semiconductor material and the second semiconductor material. The second semiconductor material in the epitaxial structures includes a first concentration, the second semiconductor material in the undoped cap layer includes at least a first concentration, and the second concentration is lower than the first concentration.
    • 具有外延结构的半导体器件包括位于衬底上的栅极结构,在栅极结构的两侧形成在衬底中的外延结构,以及形成在外延结构上的未掺杂的帽层。 外延结构包括掺杂剂,具有第一晶格常数的第一半导体材料和具有第二晶格常数的第二半导体材料,并且第二晶格常数大于第一晶格常数。 未掺杂的帽层还包括第一半导体材料和第二半导体材料。 外延结构中的第二半导体材料包括第一浓度,未掺杂帽层中的第二半导体材料至少包含第一浓度,第二浓度低于第一浓度。
    • 3. 发明授权
    • Semiconductor device having epitaxial structures
    • 具有外延结构的半导体器件
    • US08716750B2
    • 2014-05-06
    • US13189570
    • 2011-07-25
    • Chin-I LiaoTeng-Chun HsuanI-Ming LaiChin-Cheng Chien
    • Chin-I LiaoTeng-Chun HsuanI-Ming LaiChin-Cheng Chien
    • H01L29/66H01L29/165H01L29/78
    • H01L29/165H01L29/66628H01L29/66636H01L29/7848
    • A semiconductor device having epitaxial structures includes a gate structure positioned on a substrate, epitaxial structures formed in the substrate at two sides of the gate structure, and an undoped cap layer formed on the epitaxial structures. The epitaxial structures include a dopant, a first semiconductor material having a first lattice constant, and a second semiconductor material having a second lattice constant, and the second lattice constant is larger than the first lattice constant. The undoped cap layer also includes the first semiconductor material and the second semiconductor material. The second semiconductor material in the epitaxial structures includes a first concentration, the second semiconductor material in the undoped cap layer includes at least a first concentration, and the second concentration is lower than the first concentration.
    • 具有外延结构的半导体器件包括位于衬底上的栅极结构,在栅极结构的两侧形成在衬底中的外延结构,以及形成在外延结构上的未掺杂的帽层。 外延结构包括掺杂剂,具有第一晶格常数的第一半导体材料和具有第二晶格常数的第二半导体材料,并且第二晶格常数大于第一晶格常数。 未掺杂的帽层还包括第一半导体材料和第二半导体材料。 外延结构中的第二半导体材料包括第一浓度,未掺杂帽层中的第二半导体材料至少包含第一浓度,第二浓度低于第一浓度。