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1. 发明申请

US20080061343A1 Metal-oxide-metal structure with improved capacitive coupling area 审中-公开
标题翻译：具有改善电容耦合面积的金属氧化物 - 金属结构
公开(公告)号：US20080061343A1
公开(公告)日：2008-03-13
申请号：US11518470
申请日：2006-09-08
申请人： Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L29/94
CPC分类号： H01L23/5223 , H01L28/60 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A stacked metal-oxide-metal (MOM) capacitor structure and method of forming the same to increase an electrode/capacitor dielectric coupling area to increase a capacitance, the MOM capacitor structure including a plurality of metallization layers in stacked relationship; wherein each metallization layer includes substantially parallel spaced apart conductive electrode line portions having a first intervening capacitor dielectric; and, wherein the conductive electrode line portions are electrically interconnected between metallization layers by conductive damascene line portions formed in a second capacitor dielectric and disposed underlying the conductive electrode line portions.
摘要翻译：一种堆叠的金属氧化物金属（MOM）电容器结构及其形成方法，以增加电极/电容器介质耦合面积以增加电容，所述MOM电容器结构包括堆叠关系的多个金属化层; 其中每个金属化层包括具有第一中间电容器电介质的基本上平行的隔开的导电电极线部分; 并且其中所述导电电极线部分通过形成在第二电容器电介质中并设置在所述导电电极线部分下方的导电镶嵌线部分在金属化层之间电互连。

2. 发明授权

US07955993B2 Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film deposition 有权
标题翻译：氧气等离子体还原以消除BPTEOS薄膜沉积中的前体溢出
公开(公告)号：US07955993B2
公开(公告)日：2011-06-07
申请号：US12478493
申请日：2009-06-04
申请人： Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31625 , H01L21/02129 , H01L21/02271 , H01L21/0234 , H01L21/3105 , H01L21/76826
摘要： A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrate; stopping the flow of the first reactant, boron dopant and phosphorus dopant into the reaction chamber and so that a phosphorus dopant and boron dopant rich film is deposited over the layer of BPTEOS; and reducing the film comprising exposing the film to an O2 plasma.
摘要翻译：一种包括在反应室中提供半导体衬底的方法; 将包括硅和氧的第一反应物，硼掺杂剂和磷掺杂剂流动到反应室中，使得在半导体衬底上沉积BPTEOS层; 阻止第一反应物，硼掺杂剂和磷掺杂剂流入反应室，使得磷掺杂剂和硼掺杂剂富含膜沉积在BPTEOS层上; 并且还原膜包括将膜暴露于O 2等离子体。

3. 发明申请

US20100311252A1 OXYGEN PLASMA REDUCTION TO ELIMINATE PRECURSOR OVERFLOW IN BPTEOS FILM DEPOSITION 有权
标题翻译：消除BPTEOS膜沉积中前体溢出的氧气等离子体减少
公开(公告)号：US20100311252A1
公开(公告)日：2010-12-09
申请号：US12478493
申请日：2009-06-04
申请人： Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L21/283 , H01L21/285
CPC分类号： H01L21/31625 , H01L21/02129 , H01L21/02271 , H01L21/0234 , H01L21/3105 , H01L21/76826
摘要： A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrate; stopping the flow of the first reactant, boron dopant and phosphorus dopant into the reaction chamber and so that a phosphorus dopant and boron dopant rich film is deposited over the layer of BPTEOS; and reducing the film comprising exposing the film to an O2 plasma.
摘要翻译：一种包括在反应室中提供半导体衬底的方法; 将包括硅和氧的第一反应物，硼掺杂剂和磷掺杂剂流动到反应室中，使得在半导体衬底上沉积BPTEOS层; 阻止第一反应物，硼掺杂剂和磷掺杂剂流入反应室，使得磷掺杂剂和富含硼的掺杂剂的膜沉积在BPTEOS层上; 并且还原膜包括将膜暴露于O 2等离子体。

4. 发明授权

US08497183B2 Devices having a cavity structure and related methods 有权
标题翻译：具有腔结构和相关方法的器件
公开(公告)号：US08497183B2
公开(公告)日：2013-07-30
申请号：US12662681
申请日：2010-04-28
申请人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
发明人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
IPC分类号： H01L21/76
CPC分类号： H01M8/1097 , H01M2008/1095 , Y02P70/56
摘要： A method of making a device. The method comprises providing a first layer including a first material on a surface of a substrate, removing a portion of the first layer and a corresponding portion of the substrate to form an opening in the first layer and a recessed portion in the surface of the substrate, and supplying a liquid mixture to the opening and the recessed portion. The liquid mixture includes a first component having a first chemical affinity to the first material and a second component having a second chemical affinity to the first material, which is smaller than the first chemical affinity. The method also includes removing the second component and forming a second layer including the first component. The second layer covers the recessed portion and adheres to an edge portion of the first layer, such that the second layer and the recessed portion define a cavity.
摘要翻译：制造装置的方法。该方法包括在衬底的表面上提供包括第一材料的第一层，去除第一层的一部分和衬底的对应部分以在第一层中形成开口，并且在衬底的表面中形成凹陷部分并且将液体混合物供应到开口和凹部。液体混合物包括对第一材料具有第一化学亲和力的第一组分和对第一材料具有第二化学亲和力的第二组分，其小于第一化学亲和力。该方法还包括移除第二部件并形成包括第一部件的第二层。第二层覆盖凹部并粘附到第一层的边缘部分，使得第二层和凹部限定一个空腔。

5. 发明授权

US09982340B2 Shower head apparatus and method for controlling plasma or gas distribution 有权
公开(公告)号：US09982340B2
公开(公告)日：2018-05-29
申请号：US13439127
申请日：2012-04-04
申请人： Chih-Tsung Lee , Hung Jui Chang , You-Hua Chou , Shiu-Ko Jangjian , Chung-En Kao , Ming-Chin Tsai , Huan-Wen Lai
发明人： Chih-Tsung Lee , Hung Jui Chang , You-Hua Chou , Shiu-Ko Jangjian , Chung-En Kao , Ming-Chin Tsai , Huan-Wen Lai
IPC分类号： C23C16/44 , C23C16/30 , C23C16/509 , H01J37/32
CPC分类号： C23C16/4412 , C23C16/308 , C23C16/5096 , H01J37/32091 , H01J37/3244
摘要： An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

6. 发明授权

US08624394B2 Integrated technology for partial air gap low K deposition 有权
标题翻译：局部气隙低K沉积的综合技术
公开(公告)号：US08624394B2
公开(公告)日：2014-01-07
申请号：US13313542
申请日：2011-12-07
申请人： Hung Jui Chang , Chih-Tsung Lee , You-Hua Chou , Shiu-Ko Jang Jian , Ming-Shiou Kuo
发明人： Hung Jui Chang , Chih-Tsung Lee , You-Hua Chou , Shiu-Ko Jang Jian , Ming-Shiou Kuo
IPC分类号： H01L23/48
CPC分类号： H01L21/764 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.
摘要翻译：半导体器件包括半导体本体和覆盖半导体本体的低K电介质层。低K电介质层的第一部分包括电介质材料，低K电介质层的第二部分包括气隙，其中第一部分和第二部分相对于彼此横向设置。还公开了一种用于形成低K电介质层的方法，包括在半导体本体上形成电介质层，在电介质层中形成彼此横向设置的多个气隙，并在电介质层和空气上形成覆盖层差距

7. 发明申请

US20130147046A1 Integrated Technology for Partial Air Gap Low K Deposition 有权
标题翻译：部分气隙低K沉积的综合技术
公开(公告)号：US20130147046A1
公开(公告)日：2013-06-13
申请号：US13313542
申请日：2011-12-07
申请人： Hung Jui Chang , Chih-Tsung Lee , You-Hua Chou , Shiu-Ko Jang Jian , Ming-Shiou Kuo
发明人： Hung Jui Chang , Chih-Tsung Lee , You-Hua Chou , Shiu-Ko Jang Jian , Ming-Shiou Kuo
IPC分类号： H01L23/48 , H01L23/538
CPC分类号： H01L21/764 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.
摘要翻译：半导体器件包括半导体本体和覆盖半导体本体的低K电介质层。低K电介质层的第一部分包括电介质材料，低K电介质层的第二部分包括气隙，其中第一部分和第二部分相对于彼此横向设置。还公开了一种用于形成低K电介质层的方法，包括在半导体本体上形成电介质层，在电介质层中形成彼此横向设置的多个气隙，并在电介质层和空气上形成覆盖层差距

8. 发明申请

US20100255187A1 Devices having a cavity structure and related methods 有权
标题翻译：具有腔结构和相关方法的器件
公开(公告)号：US20100255187A1
公开(公告)日：2010-10-07
申请号：US12662681
申请日：2010-04-28
申请人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
发明人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
IPC分类号： B05D5/12
CPC分类号： H01M8/1097 , H01M2008/1095 , Y02P70/56
摘要： A structure having a cavity or enclosed space is fabricated by forming a recessed region in a surface of a substrate, and providing a first layer adjacent the recessed region. A liquid mixture including first and second components is supplied to the recessed region. The first component has a higher chemical affinity to the first layer than the second component such that the first component separates from the second component and adheres to an edge portion of the first layer. The substrate may then be heated to remove the second component from the recessed region through evaporation. As a result, the first component remains as a second layer adhering to the edge portion of the first layer and covering the recessed region, thereby defining a cavity or enclosed space with the recessed region. Unique structures including such cavities may be employed to realize a capacitor having a fluid, as opposed to solid, dielectric material, in order to increase the capacitance of the capacitor. Alternatively, such cavities may confine the flow of gases within narrow grooves of a substrate to realize a fuel cell having reduced size.
摘要翻译：通过在衬底的表面中形成凹陷区域并且提供与凹陷区域相邻的第一层来制造具有空腔或封闭空间的结构。包含第一和第二组分的液体混合物被供应到凹陷区域。第一组分比第二组分具有比第一组分更高的化学亲和力，使得第一组分与第二组分分离并粘附到第一层的边缘部分。然后可以加热衬底以通过蒸发从凹陷区域去除第二组分。结果，第一部件保持作为粘附到第一层的边缘部分并覆盖凹陷区域的第二层，由此限定具有凹陷区域的空腔或封闭空间。包括这种空穴的独特结构可以用于实现与固体介电材料相反的流体的电容器，以便增加电容器的电容。或者，这样的空腔可以将气体流限制在基板的窄槽内，以实现具有减小的尺寸的燃料电池。

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