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1. 发明授权

US06004392A Ferroelectric capacitor and manufacturing the same using bismuth layered oxides 失效
标题翻译：铁电电容器和使用铋层状氧化物制造相同
公开(公告)号：US06004392A
公开(公告)日：1999-12-21
申请号：US709391
申请日：1996-09-06
申请人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami
发明人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami
IPC分类号： C23C16/40 , C30B25/02 , H01L21/02 , H01L21/314 , H01L21/316
CPC分类号： H01L28/55 , C23C16/40 , C23C16/407 , C30B25/02 , C30B29/16 , C30B29/22 , H01L21/31691
摘要： Described are a stable semiconductor memory device which is not susceptible to the influence of a heat treatment temperature of a semiconductor substrate of reaction pressure in the CVD method and is free from the reduction in remanence caused by data writing in repetition; and a fabrication process of such a device which comprises forming, by the CVD method, a ferroelectric film containing as a component element bismuth, suing a bismuth alkoxide compound as a raw material, and using the ferroelectric film as a film for the formation of storage capacitance for a semiconductor memory device.
摘要翻译：描述了一种稳定的半导体存储器件，其在CVD方法中不受反应压力的半导体衬底的热处理温度的影响，并且不会因重复的数据写入而导致的剩磁减小; 以及这种器件的制造方法，其包括通过CVD法形成含有作为元素铋的元素铋的铁电体膜，起作用作为原料的铋醇盐化合物，并且使用铁电体膜作为形成保存层的膜半导体存储器件的电容。

2. 发明授权

US06995069B2 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method 失效
公开(公告)号：US06995069B2
公开(公告)日：2006-02-07
申请号：US10264448
申请日：2002-10-03
申请人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
发明人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
IPC分类号： H01L21/20
CPC分类号： H01L28/55 , H01L21/02197 , H01L21/02271 , H01L21/31122 , H01L21/32136 , H01L28/75
摘要： In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film—are sequentially made on an Si substrate. The SBT film may comprise Bix, Sry, Ta2.0 and Oz, where the atomic ratio may be within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O—C2H5)3, Bi(O—iC3H7)3, Bi(O-tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2. 2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(TD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i-OC3H7)4THD.

3. 发明授权

US06544857B1 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method 失效
标题翻译：电介质电容器制造方法和半导体存储器件的制造方法
公开(公告)号：US06544857B1
公开(公告)日：2003-04-08
申请号：US09262329
申请日：1999-03-04
申请人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
发明人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
IPC分类号： H01L2120
CPC分类号： H01L28/55 , H01L21/02197 , H01L21/02271 , H01L21/31122 , H01L21/32136 , H01L28/75
摘要： In a process for manufacturing a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film-are sequentially made on a Si substrate. The SBT film may comprise BixSryTa2.0Oz, where the atomic composition ratio maybe within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is annealed to change its amorphous phase to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O-C2H5)3, Bi(O-iC3H7)3, Bi(O- tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2·2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(THD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i- OC3H7)4THD.
摘要翻译：在介质电容器的制造方法中，依次在Si衬底上制造IrO2膜，Ir膜，非晶膜和Pt膜。 SBT膜可以包含BixSryTa2.0Oz，其中原子组成比可以在0 <= Sr / Ti <=1.0,0≤Ba/Ti≤1.0的范围内。将形成为介电电容器的Pt膜，非晶膜，Ir膜和IrO 2膜与非晶膜退火，将其非晶相变为钙钛矿型结晶结构的结晶相，由此得到SBT膜。该方法可以包括由选自Bi（C 6 H 5）3，Bi（o-C 7 H 7）3，Bi（O-C 2 H 5）3，Bi（O-C 3 H 7）3， Bi（O-tC4H9）3，Bi（O-tC5H11）3，Sr（THD）2，Sr（THD）2四聚体，Sr（Me5C5）2.2THF，Ti（i-OC3H7）4，TiO（THD） Ti（I-OC3H7）2，（i-OC3H7）2，Ta（i-OC3H7）5，Ta（iOC3H7）4THD，Nb（i-OC3H7）5，Nb（i-OC3H7）4THD。

4. 发明授权

US6114199A Manufacturing method for ferroelectric film and nonvolatile memory using the same 失效
标题翻译：铁电薄膜的制造方法和使用其的非易失性存储器
公开(公告)号：US6114199A
公开(公告)日：2000-09-05
申请号：US704288
申请日：1996-08-28
申请人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami , Christian Gutleben
发明人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami , Christian Gutleben
IPC分类号： C01B13/14 , H01L21/02 , H01L21/316 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/11507 , H01L28/55
摘要： A ferroelectric thin film is subjected to heat treatment in an active oxygen atmosphere containing an oxidizing gas such as ozone, N.sub.2 O, or NO.sub.2, thereby preventing occurrence of oxygen defects (oxygen vacancies) in the thin film, and avoiding a deterioration in dielectric characteristics, ferroelectric characteristics, and electric characteristics required for the ferroelectric thin film, such as a reduction in permittivity, an increase in leakage current, a reduction in remanent polarization, and an increase in coercive electric field. Thus, the ferroelectric thin film having stable characteristics can be formed. Further, a nonvolatile memory cell using this ferroelectric thin film as a capacitor is formed.
摘要翻译：在包含臭氧，N 2 O，NO 2等氧化性气体的活性氧气氛中，对铁电薄膜进行热处理，防止薄膜的氧缺陷（氧空位）的发生，避免电介质的劣化，铁电特性，铁电薄膜所需的电特性，例如介电常数的降低，漏电流的增加，剩余极化的减少以及矫顽电场的增加。因此，可以形成具有稳定特性的铁电薄膜。此外，形成使用该铁电薄膜作为电容器的非易失性存储单元。

5. 发明授权

US5935549A Method of producing bismuth layered compound 失效
标题翻译：生产铋层状化合物的方法
公开(公告)号：US5935549A
公开(公告)日：1999-08-10
申请号：US621618
申请日：1996-03-26
申请人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
发明人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
IPC分类号： C01G35/00 , C01G29/00 , C01F1/00
CPC分类号： C01G35/006 , C01P2002/20 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2006/40
摘要： A process is disclosed for making a bismuth layered compound, such as Bi.sub.2 SrTa.sub.2 O.sub.9, by forming mixture of Bi.sub.2 O.sub.3, Ta.sub.2 O.sub.5 and a compound selected from strontium hydroxide or strontium nitrate, grinding the mixture, shaping the ground mixture at elevated temperature and pressure to form a pellet of bismuth strontium tantalum oxide having a fluorite structure and then heating the pellet in a flow of oxygen at 800-1000.degree. C. until a single phase bismuth layered compound is obtained.
摘要翻译：公开了通过形成Bi 2 O 3，Ta 2 O 5和选自氢氧化锶或硝酸锶的化合物的混合物来制备铋层状化合物如Bi 2 SrO 2 O 9的方法，研磨该混合物，在高温和高压下成型研磨的混合物以形成颗粒的具有萤石结构的铋锶钽氧化物，然后在800-1000℃的氧气流中加热沉淀，直至获得单相铋层状化合物。

6. 发明授权

US06251360B1 Method of producing bismuth layered compound 有权
标题翻译：生产铋层状化合物的方法
公开(公告)号：US06251360B1
公开(公告)日：2001-06-26
申请号：US09369867
申请日：1999-08-09
申请人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
发明人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
IPC分类号： C01G2900
CPC分类号： C01G35/006 , C01P2002/20 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2006/40
摘要： A method of producing a bismuth layered compound that includes the steps of providing a substrate, dissolving Bi, Sr and Ta containing compounds in an organic solvent to form a solution having a Bi:Sr:Ta volume ratio of 2:1:2, evaporating the solution and depositing the evaporated solution onto the substrate, heating the substrate to form a thin film having a fluorite structure, and heating the thin film in an oxidizing atmosphere to convert the thin film having a fluorite structure to a thin film comprising Bi2SrTa2O9.
摘要翻译：一种生产铋层状化合物的方法，包括以下步骤：提供基材，将含有Bi，Sr和Ta的化合物溶解在有机溶剂中以形成Bi:Sr:Ta体积比为2:1:2的溶液，蒸发溶液并将蒸发的溶液沉积在基底上，加热基底以形成具有萤石结构的薄膜，并在氧化气氛中加热薄膜以将具有萤石结构的薄膜转化为包含Bi 2 Sr 2 O 9的薄膜。

7. 发明授权

US5168388A Optical waveguide device and optical second harmonic generator using the same 失效
标题翻译：光波器件和光学第二谐波发生器
公开(公告)号：US5168388A
公开(公告)日：1992-12-01
申请号：US686434
申请日：1991-04-17
申请人： Hitoshi Tamada , Masaki Saitoh , Chiharu Isobe
发明人： Hitoshi Tamada , Masaki Saitoh , Chiharu Isobe
IPC分类号： G02B6/122 , G02F1/37 , G02F1/377
CPC分类号： G02B6/122 , G02F1/377 , G02F2001/374
摘要： An optical waveguide device is disclosed which comprises a KTiOPO.sub.4 single crystal substrate and an amorphous optical waveguide formed of Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 doped with TiO.sub.2. A second harmonic generator device in the form of the Cerenkov radiation using the optical waveguide has high SHG efficiency. Since the Cerenkov angle can be made small by optimizing the dimensions, the spread angle of the SHG light can be made small.

8. 发明授权

US07303927B2 Three-dimensional ferroelectric capacitor and method for manufacturing thereof as well as semiconductor memory device 失效
标题翻译：三维铁电电容器及其制造方法以及半导体存储器件
公开(公告)号：US07303927B2
公开(公告)日：2007-12-04
申请号：US10834547
申请日：2004-04-29
申请人： Chiharu Isobe , Yoshio Sakai
发明人： Chiharu Isobe , Yoshio Sakai
IPC分类号： H01L21/20
CPC分类号： H01L28/55 , H01L27/11502 , H01L27/11507
摘要： A ferroelectric capacitor is provided in which the surface area of a ferroelectric thin film is expanded to increase the amount of polarization. In the ferroelectric capacitor, hemi-spherical protruding parts 31 are formed with HSG-growth on the surface of a polycrystalline silicon film 30. On the polycrystalline silicon film 30 having the hemi-spherical protruding parts 31 are sequentially laminated an adhesive layer 32, lower electrode 33, ferroelectric film 34, and upper electrode 35. The ferroelectric film 34 is shaped to overlap the shape of hemi-spherical protruding parts 31 of the polycrystalline silicon film 30, and the surface area thereof is expanded.
摘要翻译：提供了强电介质电容器，其中铁电薄膜的表面积被扩大以增加极化量。在铁电电容器中，半球状突出部31在多晶硅膜30的表面上形成有HSG生长。在具有半球状突出部31的多晶硅膜30上依次层叠有粘合剂层32，下部电极33，铁电体膜34和上部电极35.铁电体膜34成形为与多晶硅膜30的半球形突出部31的形状重叠，其表面积扩大。

9. 发明授权

US5426310A Method of heat-treating an oxide optical crystal and a heat treatment apparatus for carrying out the same 失效
标题翻译：氧化物光学晶体的热处理方法和用于进行氧化物光学晶体的热处理装置
公开(公告)号：US5426310A
公开(公告)日：1995-06-20
申请号：US252548
申请日：1994-06-01
申请人： Hitoshi Tamada , Masaki Saitoh , Chiharu Isobe
发明人： Hitoshi Tamada , Masaki Saitoh , Chiharu Isobe
IPC分类号： C30B33/00 , G02B5/20 , F21V9/04 , C01B15/04
CPC分类号： C30B33/00 , C30B29/28
摘要： A heat treatment method heats an oxide optical crystal in an oxygen atmosphere containing ozone to improve the light absorption characteristics of the oxide optical crystal so that the light absorption of the oxide optical crystal with light in wavelength bands other than light in wavelength bands with which the oxide optical crystal exerts the intrinsic absorption is reduced to the least possible extent. Guided-optical-wave propagation devices and optical devices, such as optical isolators, optical recording media and second harmonic generators, employing the oxide optical crystal having these improved absorption characteristics, operate at a high efficiency.
摘要翻译：热处理方法在含有臭氧的氧气氛中加热氧化物光学晶体，以提高氧化物光学晶体的光吸收特性，使得氧化物光学晶体的光在除波长带以外的波长带中的波长带氧化物光学晶体发挥固有吸收，尽可能减小到最小程度。引导光波传播装置和诸如光隔离器，光记录介质和二次谐波发生器的光学装置，采用具有这些改进的吸收特性的氧化物光学晶体以高效率运行。

10. 发明授权

US6091134A Semiconductor lead frame and method for manufacturing the same 失效
标题翻译：半导体引线框及其制造方法
公开(公告)号：US6091134A
公开(公告)日：2000-07-18
申请号：US134274
申请日：1998-08-14
申请人： Tokushi Sakamoto , Chiharu Isobe
发明人： Tokushi Sakamoto , Chiharu Isobe
IPC分类号： H01L21/48 , H01L23/433 , H01L23/495 , H01L23/435
CPC分类号： H01L23/4334 , H01L21/4842 , H01L23/49551 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01079 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1301 , H01L2924/181
摘要： A semiconductor device manufacturing method and a semiconductor lead frame and its manufacturing method are disclosed. The semiconductor lead frame, in one form, comprises a chip pad section on which a semiconductor chip is mounted and a lead section including inner leads that are wire-bonded to electrodes of the semiconductor chip and outer leads that protrude out from the lead frame after packaging. Further, when the pad section and the lead section are connected together using a folding portion, which has not been folded, then the chip pad section sits apart from the lead section without overlapping. When the folding portion is folded, the ends of the inner leads of the lead section overlap the chip pad section and are located around a semiconductor chip mounting position of the chip pad section. Other forms of the semiconductor lead frame and various forms of the above-mentioned manufacturing methods are also disclosed.
摘要翻译：公开了半导体器件制造方法和半导体引线框及其制造方法。一种形式的半导体引线框架包括其上安装有半导体芯片的芯片焊盘部分和引线部分，引线部分包括引线键合到半导体芯片的电极和从引线框架突出的外部引线之后的引线框架打包。此外，当使用未被折叠的折叠部分将焊盘部分和引线部分连接在一起时，芯片焊盘部分与引线部分分开而不重叠。当折叠部分折叠时，引线部分的内部引线的端部与芯片焊盘部分重叠并位于芯片焊盘部分的半导体芯片安装位置周围。还公开了其他形式的半导体引线框架和各种形式的上述制造方法。

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