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1. 发明授权

US07939434B2 Method for fabricating polysilicon film 有权
标题翻译：多晶硅薄膜制造方法
公开(公告)号：US07939434B2
公开(公告)日：2011-05-10
申请号：US12116017
申请日：2008-05-06
申请人： Chih-Yuan Tseng , I Hsuan Peng , Yung-Hui Yeh , Jung-Jie Huang , Cheng-Ju Tsai
发明人： Chih-Yuan Tseng , I Hsuan Peng , Yung-Hui Yeh , Jung-Jie Huang , Cheng-Ju Tsai
IPC分类号： H01L21/20 , H01L21/26
CPC分类号： H01L29/66765 , C23C16/24 , C23C16/507
摘要： A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.
摘要翻译：公开了一种在低温下直接沉积多晶硅膜的方法。该方法包括提供衬底并执行顺序沉积工艺。顺序沉积工艺包括第一和第二沉积步骤。在第一沉积步骤中，向衬底施加第一偏置电压，并且利用等离子体化学气相沉积在衬底上形成第一多晶硅子层。在第二沉积步骤中，向衬底施加第二偏置电压，并且利用等离子体化学气相沉积在第一子层上形成第二多晶硅子层。第一和第二子层构成多晶硅膜，第一偏置电压与第二偏置电压不同。

2. 发明申请

US20090020790A1 METHOD FOR FABRICATING POLYSILICON FILM, A GAS PHASE DEPOSITION APPARATUS AND AN ELECTRONIC DEVICE FORMED THEREBY 有权
标题翻译：制备聚硅氧烷膜的方法，气相沉积装置及其形成的电子装置
公开(公告)号：US20090020790A1
公开(公告)日：2009-01-22
申请号：US12116017
申请日：2008-05-06
申请人： Chih-Yuan Tseng , I Hsuan Peng , Yung-Hui Yeh , Jung-Jie Huang , Cheng-Ju Tsai
发明人： Chih-Yuan Tseng , I Hsuan Peng , Yung-Hui Yeh , Jung-Jie Huang , Cheng-Ju Tsai
IPC分类号： H01L29/80 , H01L21/441 , C23C16/54 , C23C16/505
CPC分类号： H01L29/66765 , C23C16/24 , C23C16/507
摘要： A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.
摘要翻译：公开了一种在低温下直接沉积多晶硅膜的方法。该方法包括提供衬底并执行顺序沉积工艺。顺序沉积工艺包括第一和第二沉积步骤。在第一沉积步骤中，向衬底施加第一偏置电压，并且利用等离子体化学气相沉积在衬底上形成第一多晶硅子层。在第二沉积步骤中，向衬底施加第二偏置电压，并且利用等离子体化学气相沉积在第一子层上形成第二多晶硅子层。第一和第二子层构成多晶硅膜，第一偏置电压与第二偏置电压不同。

3. 发明授权

US07238265B2 Electroplating apparatus with functions of voltage detection and flow rectification 有权
标题翻译：具有电压检测和流量整流功能的电镀设备
公开(公告)号：US07238265B2
公开(公告)日：2007-07-03
申请号：US10743496
申请日：2003-12-23
申请人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
发明人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
IPC分类号： C25B9/04 , C25F7/00
CPC分类号： C25D5/08 , C25D17/001 , C25D17/008 , C25D21/10
摘要： The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.
摘要翻译：本发明提供一种具有电压检测和整流功能的喷泉型电镀设备，包括：电镀槽，整流装置和溢流槽，其中电镀槽位于溢流槽内，整流装置为另外，电镀槽由电镀槽构成，由电解槽，阴极电极和网状阳极构成。本发明的装置还包括：电源，切换器，多个检测电路和多个连接线，用于对其进行监视。

4. 发明申请

US20050157603A1 METHOD AND APPARATUS FOR IMPROVED SEEK PERFORMANCE AND STABILITY IN A HEADER-INCLUDED LAND/GROOVE OPTICAL DISC 审中-公开
标题翻译：在包括土地/光栅光盘中的改进的SEEK性能和稳定性的方法和装置
公开(公告)号：US20050157603A1
公开(公告)日：2005-07-21
申请号：US10707859
申请日：2004-01-19
申请人： Chih-Yuan Tseng , Shun-Yung Wang
发明人： Chih-Yuan Tseng , Shun-Yung Wang
IPC分类号： G11B7/007 , G11B7/085
CPC分类号： G11B7/00718 , G11B7/00745 , G11B7/08541
摘要： An optical disc drive utilized for transferring data to and/or from a header-included land/groove optical disc includes a motor, a spindle, a focusing lens, a laser, a pickup head, a memory, and a control circuit. A header position signal is utilized as a mask to eliminate false track readings produced by passing headers in a track count signal, improving track count and allowing more precise control over the accelerative and braking radial forces applied to the pickup head during a jump. Additionally, the memory includes computer code to delay initiating and/or ending a jump when passing headers may interfere with normal seek operations and may prevent some jumps in the immediate vicinity of an upcoming G/L Switch Line.
摘要翻译：用于将数据传送到和/或从包含标题的陆地/凹槽光盘的光盘驱动器包括马达，主轴，聚焦透镜，激光，拾取头，存储器和控制电路。标题位置信号用作掩模以消除通过在轨道计数信号中传递头部而产生的错误轨迹读数，改善轨迹计数并且允许更精确地控制在跳跃期间施加到拾取头的加速度和制动径向力。此外，存储器包括用于在传送头部可能干扰正常搜索操作时延迟启动和/或结束跳转的计算机代码，并且可以防止即将到来的G / L开关线路附近的一些跳转。

5. 发明申请

US20120123760A1 METHOD FOR DESIGNING AN APTAMER 失效
标题翻译：设计APTAMER的方法
公开(公告)号：US20120123760A1
公开(公告)日：2012-05-17
申请号：US13298830
申请日：2011-11-17
申请人： Jack A. Tuszynski , Chih-Yuan Tseng
发明人： Jack A. Tuszynski , Chih-Yuan Tseng
IPC分类号： G06G7/48
CPC分类号： G06F19/18 , G06F19/16
摘要： Disclosed in this specification is a method for identifying at least one aptamer that can bind to a bio-molecular target. The aptamer is designed in silico based on the structure of the target molecule. The process includes the steps of determining a first seed residue and growing an oligomer, one residue at a time, while maximizing the entropy of target-oligomer complex or minimizing the binding energy after the addition of each oligomer.
摘要翻译：在本说明书中公开的是鉴定至少一种能够结合生物分子靶标的适体的方法。基于目标分子的结构，适配体被设计为硅胶。该方法包括以下步骤：确定第一种子残基并一次生长一个残基，同时最大化靶 - 低聚物复合物的熵或使加入每种低聚物后的结合能最小化。

6. 发明授权

US07449091B2 Wafer electroplating apparatus 有权
标题翻译：晶圆电镀设备
公开(公告)号：US07449091B2
公开(公告)日：2008-11-11
申请号：US11073655
申请日：2005-03-08
申请人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
发明人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
IPC分类号： B01D19/00 , C25B15/00
CPC分类号： C25D21/04 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001
摘要： A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
摘要翻译：具有除泡功能的晶片电镀装置包括电镀浴主体和定影装置。电镀浴主体具有入口装置，第一去泡箱和至少一个空气孔。定影装置具有第二去泡箱和外壳。气孔将聚集气泡引导到电镀浴主体的外部，以便除去气泡。定影装置可以放入电镀槽主体内的第一个脱泡槽中，形成去气泡区域，并容易地分离，以清洁晶片电镀装置。电镀浴主体还包括用于在进入入口装置之前对电镀液流进行整流的挡板。

7. 发明申请

US20060137974A1 Wafer electroplating apparatus 有权
标题翻译：晶圆电镀设备
公开(公告)号：US20060137974A1
公开(公告)日：2006-06-29
申请号：US11073655
申请日：2005-03-08
申请人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
发明人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
IPC分类号： C25B15/08
CPC分类号： C25D21/04 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001
摘要： A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
摘要翻译：具有除泡功能的晶片电镀装置包括电镀浴主体和定影装置。电镀浴主体具有入口装置，第一去泡箱和至少一个空气孔。定影装置具有第二去泡箱和外壳。气孔将聚集气泡引导到电镀浴主体的外部，以便除去气泡。定影装置可以放入电镀槽主体内的第一个脱泡槽中，形成去气泡区域，并容易地分离，以清洁晶片电镀装置。电镀浴主体还包括用于在进入入口装置之前对电镀液流进行整流的挡板。

8. 发明授权

US06803329B2 Method for low temperature liquid-phase deposition and method for cleaning liquid-phase deposition apparatus 失效
标题翻译：低温液相沉积方法及清洗液相沉积装置的方法
公开(公告)号：US06803329B2
公开(公告)日：2004-10-12
申请号：US10342245
申请日：2003-01-15
申请人： Edward Y. Chang , Muh-Wang Liang , Shih-Ming Chiang , Chih-Yuan Tseng , Pang-Min Chiang
发明人： Edward Y. Chang , Muh-Wang Liang , Shih-Ming Chiang , Chih-Yuan Tseng , Pang-Min Chiang
IPC分类号： H01L2131
CPC分类号： H01L21/02282 , H01L21/316 , H01L23/3192 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： A method for low temperature liquid-phase deposition and a method for cleaning a liquid-phase deposition apparatus are disclosed. The method for low temperature liquid-phase deposition is employed so as to form a low-temperature grown film or a film with excellent step-coverage on the surface of a semiconductor device having independent circuit functions. The method for cleaning liquid-phase deposition apparatus is characterized in that a loop used exclusively for cleaning is employed so as to prevent SiO2 powders from remaining in the loop.
摘要翻译：公开了低温液相沉积的方法和清洗液相沉积设备的方法。采用低温液相沉积的方法，以便在具有独立电路功能的半导体器件的表面上形成低温生长膜或具有优异的阶梯覆盖的膜。清洗液相沉积装置的方法的特征在于，采用专门用于清洗的环，以防止SiO 2粉末残留在回路中。

9. 发明授权

US08484010B2 Method for designing an aptamer 失效
标题翻译：设计适体的方法
公开(公告)号：US08484010B2
公开(公告)日：2013-07-09
申请号：US13298830
申请日：2011-11-17
申请人： Jack A. Tuszynski , Chih-Yuan Tseng
发明人： Jack A. Tuszynski , Chih-Yuan Tseng
IPC分类号： G06G7/48 , G06F17/11 , G06F17/50
CPC分类号： G06F19/18 , G06F19/16
摘要： Disclosed in this specification is a method for identifying at least one aptamer that can bind to a bio-molecular target. The aptamer is designed in silico based on the structure of the target molecule. The process includes the steps of determining a first seed residue and growing an oligomer, one residue at a time, while maximizing the entropy of target-oligomer complex or minimizing the binding energy after the addition of each oligomer.
摘要翻译：在本说明书中公开的是鉴定至少一种能够结合生物分子靶标的适体的方法。基于目标分子的结构，适配体被设计为硅胶。该方法包括以下步骤：确定第一种子残基并一次生长一个残基，同时最大化靶 - 低聚物复合物的熵或使加入每种低聚物后的结合能最小化。

10. 发明申请

US20050103633A1 Automatic inspection and imaging electrophoresis device 审中-公开
标题翻译：自动检测和成像电泳装置
公开(公告)号：US20050103633A1
公开(公告)日：2005-05-19
申请号：US10714647
申请日：2003-11-18
申请人： Chih-Yuan Tseng
发明人： Chih-Yuan Tseng
IPC分类号： G01N27/447 , G01N27/453
CPC分类号： G01N27/44756 , G01N27/44721
摘要： An automatic monitoring and imaging electrophoresis device. The device comprises a combined electrophoresis tank and electrophoresis analyzing equipment. The device further comprises features such as time setting, instant sensor, instant imaging, and automatic storage. It also contains components that provide a power source, sensor, light source, scanner, and storage; and an electrophoresis tray for samples in order to complete the operations of electrophoresis mobility and analysis with the same device. The electrophoresis analysis device overcomes the disadvantages of restricted operating mobility and separate analysis, as well as providing simplicity, safety and efficiency to users.
摘要翻译：一种自动监测和成像电泳装置。该装置包括组合电泳槽和电泳分析设备。该装置还包括诸如时间设置，即时传感器，即时成像和自动存储的特征。它还包含提供电源，传感器，光源，扫描仪和存储的组件; 和用于样品的电泳托盘，以完成电泳移动和相同装置的分析操作。电泳分析装置克服了操作流动性受限和单独分析的缺点，为用户提供了简单，安全，高效的优点。

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