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1. 发明授权

US07709823B2 Group-III nitride vertical-rods substrate 有权
标题翻译： III族氮化物垂直杆基板
公开(公告)号：US07709823B2
公开(公告)日：2010-05-04
申请号：US11552527
申请日：2006-10-25
申请人： Chih-Ming Lai , Wen-Yueh Liu , Jenq-Dar Tsay , Jung-Tsung Hsu , Shang-Jr Gwo , Chang-Hong Shen , Hon-Way Lin
发明人： Chih-Ming Lai , Wen-Yueh Liu , Jenq-Dar Tsay , Jung-Tsung Hsu , Shang-Jr Gwo , Chang-Hong Shen , Hon-Way Lin
IPC分类号： H01L29/12
CPC分类号： H01L29/0657 , B82Y10/00 , C30B25/183 , C30B29/403 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , H01L33/007 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.
摘要翻译：本发明涉及III族氮化物垂直杆衬底。 III族垂直杆基板包括基板，缓冲层和垂直杆层。缓冲层位于衬底上。垂直杆层位于缓冲层上，垂直杆层由站在缓冲层上的多个垂直杆组成。

2. 发明申请

US20070272914A1 GROUP-III NITRIDE VERTICAL-RODS SUBSTRATE 有权
标题翻译：第III组氮化物垂直基板
公开(公告)号：US20070272914A1
公开(公告)日：2007-11-29
申请号：US11552527
申请日：2006-10-25
申请人： Chih-Ming Lai , Wen-Yueh Liu , Jenq-Dar Tsay , Jung-Tsung Hsu , Shang-Jr Gwo , Chang-Hong Shen , Hon-Way Lin
发明人： Chih-Ming Lai , Wen-Yueh Liu , Jenq-Dar Tsay , Jung-Tsung Hsu , Shang-Jr Gwo , Chang-Hong Shen , Hon-Way Lin
IPC分类号： H01L29/06
CPC分类号： H01L29/0657 , B82Y10/00 , C30B25/183 , C30B29/403 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , H01L33/007 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.
摘要翻译：本发明涉及III族氮化物垂直杆衬底。 III族垂直杆基板包括基板，缓冲层和垂直杆层。缓冲层位于衬底上。垂直杆层位于缓冲层上，垂直杆层由站在缓冲层上的多个垂直杆组成。

3. 发明授权

US08058705B2 Composite material substrate 有权
标题翻译：复合材料基材
公开(公告)号：US08058705B2
公开(公告)日：2011-11-15
申请号：US12551534
申请日：2009-08-31
申请人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
发明人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L21/2007
摘要： A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.
摘要翻译：具有图案化结构的复合材料基板包括基板，第一介电层，第二介质层和氮化物半导体材料。这里，第一电介质层层叠在基板上，第二介电层层叠在第一电介质层上，氮化物半导体材料层叠在第二电介质层上，其特征在于多个图案。

4. 发明授权

US07687378B2 Fabricating method of nitride semiconductor substrate and composite material substrate 失效
标题翻译：氮化物半导体衬底和复合材料衬底的制造方法
公开(公告)号：US07687378B2
公开(公告)日：2010-03-30
申请号：US11467167
申请日：2006-08-25
申请人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
发明人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L21/2007
摘要： A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.
摘要翻译：提供一种氮化物半导体衬底的制造方法。首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过外延工艺。之后，分离氮化物半导体厚膜和第二基板。

5. 发明申请

US20080006849A1 FABRICATING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE AND COMPOSITE MATERIAL SUBSTRATE 失效
标题翻译：氮化物半导体衬底和复合材料衬底的制备方法
公开(公告)号：US20080006849A1
公开(公告)日：2008-01-10
申请号：US11467167
申请日：2006-08-25
申请人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
发明人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L29/2003 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L21/2007
摘要： A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.
摘要翻译：提供一种氮化物半导体衬底的制造方法。首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过外延工艺。之后，分离氮化物半导体厚膜和第二基板。

6. 发明申请

US20100013054A1 COMPOSITE MATERIAL SUBSTRATE 有权
标题翻译：复合材料基材
公开(公告)号：US20100013054A1
公开(公告)日：2010-01-21
申请号：US12551534
申请日：2009-08-31
申请人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
发明人： Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
IPC分类号： H01L29/201
CPC分类号： H01L29/2003 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L21/2007
摘要： A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.
摘要翻译：具有图案化结构的复合材料基板包括基板，第一介电层，第二介质层和氮化物半导体材料。这里，第一电介质层层叠在基板上，第二介电层层叠在第一电介质层上，氮化物半导体材料层叠在第二电介质层上，其特征在于多个图案。

7. 发明申请

US20080054294A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US20080054294A1
公开(公告)日：2008-03-06
申请号：US11562422
申请日：2006-11-22
申请人： Chih-Ming Lai , Jenq-Dar Tsay , Wen-Yueh Liu , Yih-Der Guo
发明人： Chih-Ming Lai , Jenq-Dar Tsay , Wen-Yueh Liu , Yih-Der Guo
IPC分类号： H01L33/00
CPC分类号： H01L21/02642 , H01L21/0237 , H01L21/02458 , H01L21/02463 , H01L21/0254 , H01L21/02639 , H01L21/02647
摘要： The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.
摘要翻译：本发明涉及形成氮化物半导体衬底的方法。该方法包括提供衬底，然后在衬底上形成外延层的步骤。在外延层上形成图案化掩模层，其中图案化掩模层暴露外延层的一部分。接下来，进行氧化处理以氧化暴露的外延层，以形成多个位错阻挡结构。然后去除图案化的掩模层。此外，在具有位错阻挡结构的外延层上形成氮化物半导体层。

8. 发明申请

US20100041216A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制备氮化物半导体衬底的方法
公开(公告)号：US20100041216A1
公开(公告)日：2010-02-18
申请号：US12581891
申请日：2009-10-20
申请人： Chih-Ming Lai , Jenq-Dar Tsay , Wen-Yueh Liu , Yih-Der Guo
发明人： Chih-Ming Lai , Jenq-Dar Tsay , Wen-Yueh Liu , Yih-Der Guo
IPC分类号： H01L21/20
CPC分类号： H01L21/02642 , H01L21/0237 , H01L21/02458 , H01L21/02463 , H01L21/0254 , H01L21/02639 , H01L21/02647
摘要： The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.
摘要翻译：本发明涉及形成氮化物半导体衬底的方法。该方法包括提供衬底，然后在衬底上形成外延层的步骤。在外延层上形成图案化掩模层，其中图案化掩模层暴露外延层的一部分。接下来，进行氧化处理以氧化暴露的外延层，以形成多个位错阻挡结构。然后去除图案化的掩模层。此外，在具有位错阻挡结构的外延层上形成氮化物半导体层。

9. 发明申请

US20060038195A1 Light-emitting diode and the manufacturing method of the same 审中-公开
标题翻译：发光二极管及其制造方法相同
公开(公告)号：US20060038195A1
公开(公告)日：2006-02-23
申请号：US11254691
申请日：2005-10-21
申请人： Shyi-Ming Pan , Jenq-Dar Tsay , Ru-Chin Tu , Jung-Tsung Hsu
发明人： Shyi-Ming Pan , Jenq-Dar Tsay , Ru-Chin Tu , Jung-Tsung Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32
摘要： The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.
摘要翻译：该说明书公开了一种发光二极管及相应的制造方法。在衬底的表面上形成具有倾斜表面的GaN厚膜。使用GaN外延的性质自然地形成外延倾斜表面。在GaN厚膜上生长LED结构以形成LED器件。该公开的方法和装置可以简化制造过程。本发明进一步使用GaN厚膜外延性制造具有多个倾斜表面和不同结构的各种LED芯片。由于用于在芯片上发射光的表面积增加并且多个倾斜表面减小了内部反射的机会，所以本发明的发光效率比现有技术好得多。

10. 发明申请

US20050221527A1 Light emitting diode and fabrication method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20050221527A1
公开(公告)日：2005-10-06
申请号：US11069567
申请日：2005-03-02
申请人： Wen-Yung Yeh , Jenq-Dar Tsay , Chang-Cheng Chuo , Jung-Tsung Hsu , Jim-Yong Chi
发明人： Wen-Yung Yeh , Jenq-Dar Tsay , Chang-Cheng Chuo , Jung-Tsung Hsu , Jim-Yong Chi
IPC分类号： H01L21/00 , H01L33/22 , H01L33/32 , H01L33/62
CPC分类号： H01L33/22
摘要： A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.
摘要翻译：发光二极管（LED）。 LED包括包括n型半导体层，有源层和p型半导体层的LED芯片。 n型欧姆接触电极和p型欧姆接触电极分别与n型半导体层和p型半导体层电接触。 AlGaInN厚膜在LED芯片上，并且AlGaInN厚膜具有斜边和纹理化的顶表面。

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