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1. 发明授权

US06531266B1 Rework procedure for the microlens element of a CMOS image sensor 有权
标题翻译： CMOS图像传感器的微透镜元件的返工程序
公开(公告)号：US06531266B1
公开(公告)日：2003-03-11
申请号：US09808920
申请日：2001-03-16
申请人： Chih-Kung Chang , Kuang-Peng Lin , Yu-Kung Hsiao , Fu-Tien Weng , Bii-Junq Chang , Kuo-Liang Lu
发明人： Chih-Kung Chang , Kuang-Peng Lin , Yu-Kung Hsiao , Fu-Tien Weng , Bii-Junq Chang , Kuo-Liang Lu
IPC分类号： H01L2714
CPC分类号： B29D11/00365 , G02B3/0018 , H01L31/02162 , H01L31/02327
摘要： A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.
摘要翻译：已经开发了一种用于重新制造图像传感器装置的未回流，有缺陷的微透镜元件形状的过程，而不损坏下面的间隔层或底层滤色器元件。未回流的微透镜元件形状（如果有缺陷和需要返工）首先经受高能量曝光，将未回流的微透镜元件形状转换成酸型微透镜形状，然后使用碱式显影剂溶液除去。在形成再加工的微透镜元件形状之前，在基底型显影剂移除程序之后，使用烘烤循环来冷冻或使无活性的任何残留在间隔层的表面上的有机残余物。返工的微透镜元件形状的形成，随后是退火循环，在下面的间隔层上产生所需的圆形微透镜元件。

2. 发明授权

US06682659B1 Method for forming corrosion inhibited conductor layer 有权
标题翻译：形成腐蚀的方法抑制导体层
公开(公告)号：US06682659B1
公开(公告)日：2004-01-27
申请号：US09435669
申请日：1999-11-08
申请人： Ching-Wen Cho , Kuwi-Jen Chang , Sen-Fu Chen , Kuang-Peng Lin , Shing-Jzy Tay , Szu-Hung Yang , Chai-Der Chang , Kuo-Su Huang , Jen-Shiang Leu , Weng-Liang Fang , Jyh-Ping Wang , Jow-Feng Lee
发明人： Ching-Wen Cho , Kuwi-Jen Chang , Sen-Fu Chen , Kuang-Peng Lin , Shing-Jzy Tay , Szu-Hung Yang , Chai-Der Chang , Kuo-Su Huang , Jen-Shiang Leu , Weng-Liang Fang , Jyh-Ping Wang , Jow-Feng Lee
IPC分类号： H01L21311
CPC分类号： H01L21/76838 , H01L21/02071 , H01L21/31116 , H01L21/321 , H01L21/76802 , H01L21/76883 , H01L21/76888
摘要： A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to contact with a corrosive material employed for further processing of the substrate. There is then treated, while employing a first plasma method employing a first plasma gas composition comprising an oxidizing gas, the target layer to form an oxidized target layer having an inhibited susceptibility to corrosion incident to contact with the corrosive material employed for further processing of the substrate. Finally, there is then processed further, while employing the corrosive material, the substrate. The method is useful when forming bond pads within microelectronic fabrications. When directed towards forming patterned conductor layers, such as bond pads, the method optionally employs an inert plasma treatment of a patterned conductor layer followed by an aqueous ethanolamine treatment of the patterned conductor layer prior to a first plasma treatment of the patterned conductor layer.
摘要翻译：一种钝化目标层的方法。首先提供基板。然后在基底上形成目标层，其中目标层容易受到与用于进一步处理基底的腐蚀性材料接触的腐蚀。然后在使用采用包含氧化性气体的第一等离子体气体组合物的第一等离子体方法的同时，使用目标层形成被腐蚀的腐蚀敏感性的氧化目标层，以与用于进一步处理的腐蚀性材料接触基质。最后，在使用腐蚀性材料的同时，进一步处理基板。当在微电子制造中形成接合焊盘时，该方法是有用的。当指向形成图案化的导体层（例如接合焊盘）时，该方法可以在图案化的导体层的第一等离子体处理之前，任意地使用图案化导体层的惰性等离子体处理，然后进行图案化导体层的乙醇胺水溶液处理。

3. 发明授权

US06472235B1 Apparatus and method for preparing backside-ground wafers for testing 有权
标题翻译：制备用于测试的背面晶片的装置和方法
公开(公告)号：US06472235B1
公开(公告)日：2002-10-29
申请号：US09886881
申请日：2001-06-21
申请人： Kuang-Peng Lin , Hung-Jen Tsai , Hsien-Tsong Liu
发明人： Kuang-Peng Lin , Hung-Jen Tsai , Hsien-Tsong Liu
IPC分类号： H01L2166
CPC分类号： B81C99/0035 , B81C1/00611 , B81C2201/0126 , Y10S438/959
摘要： A method and an apparatus for preparing a backside-ground wafer for testing are described. The method includes the steps of first providing a calibration wafer that has a pattern formed on a top surface of an insulating material such as oxide or nitride. Three droplets of water are applied with each droplet sufficiently apart from the other droplets on the top surface of the calibration wafer. A backside-ground wafer that has a ground backside and a front side to be tested is then mated to the calibration wafer by mating the ground backside to the top surface of the calibration wafer with water droplets therein-between forming a bond by capillary reaction in-between the oxide pattern on the calibration wafer. The apparatus for mounting a backside-ground wafer to a calibration wafer consists of a slanted block having a top surface with a slant angle between about 10° and about 30°.
摘要翻译：描述了用于制备用于测试的背面晶片的方法和装置。该方法包括以下步骤：首先提供具有形成在诸如氧化物或氮化物的绝缘材料的顶表面上的图案的校准晶片。每个液滴与校准晶片的顶表面上的其它液滴充分分开地施加三滴水。将具有接地背面和待测试的前侧的背面晶片然后通过将地面背面与校准晶片的顶表面配合而与校准晶片配合，并通过毛细管反应形成键 - 在校准晶片上的氧化物图案之间。用于将背面晶片安装到校准晶片的装置包括具有在大约10°至大约30°之间的倾斜角的顶表面的倾斜块。

4. 发明授权

US06486054B1 Method to achieve robust solder bump height 有权
标题翻译：实现坚固的焊料凸块高度的方法
公开(公告)号：US06486054B1
公开(公告)日：2002-11-26
申请号：US10058472
申请日：2002-01-28
申请人： Yang-Tung Fan , Hsiu-Mei Yu , Li-Hsin Tseng , Kuang-Peng Lin , Ta-Yang Lin
发明人： Yang-Tung Fan , Hsiu-Mei Yu , Li-Hsin Tseng , Kuang-Peng Lin , Ta-Yang Lin
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L2224/0401 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1147 , H01L2224/11472 , H01L2224/13099 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00014
摘要： The present invention teaches how greater solder ball height can be achieved without the need to sacrifice areal density. The mold in which the solder is formed, is created in two steps. In a first exposure, a negative photoresist (preferably DFR) is patterned to form a conventional cylindrical mold. However, exposure and development time are adjusted in such a way that a layer of unexposed and undeveloped resist of reduced thickness remains covering the floor of the mold. This residual resist layer is given a second exposure and, after development, forms an annular insert in the bottom of the first mold. After the mold has been filled with solder (either through electroplating or by using solder paste) it is removed, the result being a solder bump made up of two contiguous coaxial cylinders the upper one having the larger diameter. After remelt, bumps having this shape form oblate spheroids rather than spheres.
摘要翻译：本发明教导了如何在不需要牺牲面密度的情况下实现更大的焊球高度。形成焊料的模具分两步制成。在第一次曝光中，对负光致抗蚀剂（优选DFR）进行图案化以形成传统的圆柱形模具。然而，曝光和显影时间被调整为使得厚度减小的未曝光和未显影的抗蚀剂层覆盖在模具的地板上。该残余抗蚀剂层被给予第二曝光，并且在显影之后在第一模具的底部形成环形插入件。在模具已经填充有焊料（通过电镀或通过使用焊膏）之后，它被去除，结果是由两个相邻的同轴圆柱体构成的焊料凸块，其中上部具有较大的直径。重熔后，具有这种形状的凸起形成扁球体而不是球体。

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