会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Method for fabricating control gate and floating gate of a flash memory cell
    • 用于制造闪存单元的控制栅极和浮动栅极的方法
    • US06486032B1
    • 2002-11-26
    • US10174672
    • 2002-06-18
    • Chih-Hui LinChung-Lin Huang
    • Chih-Hui LinChung-Lin Huang
    • H01L218247
    • H01L27/11521H01L21/28273H01L27/115H01L29/42324H01L29/66825
    • A method for fabricating the control gate and floating gate of a flash memory cell. An active area is firstly formed on a semiconductor substrate, followed by the formation of a first insulating layer, a first conductive layer and a first masking layer. A first opening is then formed by partially removing the first masking layer, and a floating gate oxide layer is formed by oxidation. The remaining first masking layer is removed, followed by forming a sacrificial layer, which is then partially removed to define a second opening. The remaining sacrificial layer is used as a hard mask to partially remove the first conductive layer and the first insulating layer to form a third opening. A second insulating layer is formed to fill the third opening to form an insulating plug. Part of the first conductive layer and the first insulating layer are removed to form a floating gate, followed by forming a third insulating layer and a second conductive layer. The insulating plug is then used as stop layer to remove part of the second conductive layer and third insulating layer to form a control gate.
    • 一种用于制造闪存单元的控制栅极和浮置栅极的方法。 首先在半导体衬底上形成有源区,然后形成第一绝缘层,第一导电层和第一掩模层。 然后通过部分去除第一掩模层形成第一开口,并且通过氧化形成浮栅氧化层。 除去剩余的第一掩蔽层,随后形成牺牲层,然后部分地去除牺牲层以限定第二开口。 剩余的牺牲层用作硬掩模以部分地去除第一导电层和第一绝缘层以形成第三开口。 形成第二绝缘层以填充第三开口以形成绝缘插头。 去除第一导电层和第一绝缘层的一部分以形成浮置栅极,随后形成第三绝缘层和第二导电层。 然后将绝缘插头用作停止层以去除部分第二导电层和第三绝缘层以形成控制栅极。