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1. 发明授权

US06855617B1 Method of filling intervals and fabricating shallow trench isolation structures 有权
标题翻译：填充间隔和制造浅沟槽隔离结构的方法
公开(公告)号：US06855617B1
公开(公告)日：2005-02-15
申请号：US10707083
申请日：2003-11-20
申请人： Chien-Hung Lu , Chin-Ta Su , Kuang-Chao Chen
发明人： Chien-Hung Lu , Chin-Ta Su , Kuang-Chao Chen
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： A method of filling intervals between protruding structures is provided. A substrate with a plurality of protruding structures thereon is provided. The protruding structures are distributed over the substrate such that intervals are formed between adjacent protruding structures. A first dielectric layer is formed over the substrate so that the dielectric material fills the intervals between the protruding structures and covers the protruding structures as well. The first dielectric layer has a plurality of apertures therein located at a level above a top section of the protruding structures. A chemical/mechanical polishing operation is performed to remove a portion of the dielectric layer and expose the apertures to form a plurality of openings. An anisotropic etching operation is performed to increase the width of these openings. Finally, a second dielectric layer is formed over the first dielectric layer to fill the openings completely.
摘要翻译：提供了一种在突出结构之间填充间隔的方法。提供其上具有多个突出结构的基板。突出结构分布在基板上，使得在相邻突出结构之间形成间隔。第一电介质层形成在衬底上，使得介电材料填充突出结构之间的间隔并且也覆盖突出结构。第一电介质层具有位于突出结构的顶部的上方的多个孔。执行化学/机械抛光操作以去除电介质层的一部分并暴露孔以形成多个开口。进行各向异性蚀刻操作以增加这些开口的宽度。最后，在第一介电层上形成第二电介质层，以完全填充开口。

2. 发明授权

US08085390B2 Multivariate monitoring method for plasma process machine 有权
标题翻译：等离子体处理机多变量监测方法
公开(公告)号：US08085390B2
公开(公告)日：2011-12-27
申请号：US11737541
申请日：2007-04-19
申请人： Tuung Luoh , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
发明人： Tuung Luoh , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
IPC分类号： G01N21/00
CPC分类号： G01N21/68 , H01J37/32935 , H01J37/32972
摘要： An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.
摘要翻译：提供了一种用于等离子体处理机的先进过程控制（APC）系统，其包括至少一个光发射光谱（OES）系统和APC分析装置。 OES系统用于监测等离子体处理机中的测试对象。 APC分析装置用于分析从OES系统接收到的数据。

3. 发明授权

US08047899B2 Pad and method for chemical mechanical polishing 有权
标题翻译：化学机械抛光垫和方法
公开(公告)号：US08047899B2
公开(公告)日：2011-11-01
申请号：US11878654
申请日：2007-07-26
申请人： Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su , Kuang-Chao Chen
发明人： Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su , Kuang-Chao Chen
IPC分类号： B24B7/22 , B24D3/34
CPC分类号： B24B37/24 , B24D3/346
摘要： A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed on the first layer; and (b) substantially polishing the first and second layer with a pad and a substantially inhibitor-free slurry, wherein the pad comprising a corrosion inhibitor of the second layer.
摘要翻译：提供了半导体器件的两个相邻结构的化学机械抛光方法。一种用于机械抛光的方法，包括：（a）提供半导体器件，其包括在其表面形成的凹部，形成在所述表面上的第一层，以及填充有所述凹部并形成在所述第一层上的第二层; 和（b）用垫和基本上无抑制剂的浆料基本上抛光第一层和第二层，其中该垫包括第二层的腐蚀抑制剂。

4. 发明授权

US07846835B2 Contact barrier layer deposition process 有权
标题翻译：接触阻挡层沉积工艺
公开(公告)号：US07846835B2
公开(公告)日：2010-12-07
申请号：US11950319
申请日：2007-12-04
申请人： Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
发明人： Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76841 , H01L21/2855 , H01L21/28556
摘要： A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process. The IMP process includes: generating gaseous ions, accelerating the gaseous ions towards a titanium target, sputtering the titanium atoms from the titanium target with the gaseous ions, ionizing the titanium atoms using a plasma, and depositing the ionized titanium atoms onto the substrate to form the layer of Ti. A first layer of titanium nitride (TiN) is deposited onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process. A second layer of TiN is deposited onto the first layer of TiN using a thermal chemical vapor deposition process. The newly completed barrier layer is annealed in the presence of nitrogen at a temperature of between about 500° C. to about 750° C.
摘要翻译：公开了一种在衬底上沉积阻挡层的方法。使用电离金属等离子体（IMP）物理气相沉积工艺将一层钛（Ti）沉积到衬底上。 IMP过程包括：产生气体离子，将气态离子加速到钛靶，用钛离子溅射钛原子与气态离子，使用等离子体离子化钛原子，并将离子化的钛原子沉积到基底上形成 Ti层。使用金属有机化学气相沉积（MOCVD）工艺将第一层氮化钛（TiN）沉积到Ti层上。使用热化学气相沉积工艺将第二层TiN沉积到第一TiN层上。将新完成的阻挡层在氮气存在下在约500℃至约750℃的温度下进行退火。

5. 发明申请

US20090299668A1 APC SYSTEM AND MULTIVARIATE MONITORING METHOD FOR PLASMA PROCESS MACHINE 有权
公开(公告)号：US20090299668A1
公开(公告)日：2009-12-03
申请号：US12540001
申请日：2009-08-12
申请人： Tuung Luoh , Sheng-Hui Hsieh , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
发明人： Tuung Luoh , Sheng-Hui Hsieh , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
IPC分类号： G06F19/00 , G06F15/00 , G01J3/30
CPC分类号： H01J37/32972 , G01N21/68 , H01J37/32935
摘要： An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.

6. 发明申请

US20080299761A1 Interconnection process 有权
标题翻译：互连过程
公开(公告)号：US20080299761A1
公开(公告)日：2008-12-04
申请号：US11806541
申请日：2007-06-01
申请人： Tuung Luoh , Ling-Wuu Yang , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
发明人： Tuung Luoh , Ling-Wuu Yang , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , H01L21/28518 , H01L21/76828
摘要： An interconnection process is provided. The process includes the following steps. Firstly, a semiconductor base having at least a electrical conductive region is provided. Next, a dielectric layer with a contact hole is formed to cover the semiconductor base, wherein the contact hole exposes part of the electrical conductive region. Then, a thermal process is performed on the semiconductor base covered with the dielectric layer. Lastly, a conductive layer is formed on the dielectric layer, wherein the conductive layer is electrically connected to the electrical conductive region through the contact hole.
摘要翻译：提供互连过程。该过程包括以下步骤。首先，设置至少具有导电区域的半导体基板。接下来，形成具有接触孔的电介质层以覆盖半导体基底，其中接触孔暴露部分导电区域。然后，对覆盖有电介质层的半导体基板进行热处理。最后，在电介质层上形成导电层，其中导电层通过接触孔与导电区电连接。

7. 发明申请

US20080194071A1 METHOD OF FORMING NON-VOLATILE MEMORY CELL 有权
标题翻译：形成非挥发性记忆细胞的方法
公开(公告)号：US20080194071A1
公开(公告)日：2008-08-14
申请号：US11673606
申请日：2007-02-12
申请人： Chin-Tsan Yeh , Chih-Hsien Lo , Chin-Ta Su , Kuang-Chao Chen
发明人： Chin-Tsan Yeh , Chih-Hsien Lo , Chin-Ta Su , Kuang-Chao Chen
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , H01L22/26 , H01L27/115 , H01L27/11568
摘要： A method of forming a non-volatile memory cell is provided. The method comprises: (a) providing a substrate; (b) forming a stacking structure on the substrate, the stacking structure at least comprising an oxide-nitride-oxide layer (ONO layer) and a polysilicon layer thereon; (c) patterning the stacking structure to form a plurality of separated stacking units, each two stacking units having an aperture therebetween; (d) forming a source region and a drain region buried in the substrate at two sides of the each stacking unit; (e) forming an oxide layer in the aperture and over the stacking units; and (f) performing a chemical mechanical polishing (CMP) process to remove the oxide layer over the stacking units and outside the aperture.
摘要翻译：提供了形成非易失性存储单元的方法。该方法包括：（a）提供衬底; （b）在所述基板上形成堆叠结构，所述堆叠结构至少包括氧化物 - 氮化物 - 氧化物层（ONO层）和其上的多晶硅层; （c）图案化堆叠结构以形成多个分离的堆叠单元，每个两个堆叠单元在其间具有孔; （d）在每个堆叠单元的两侧形成在基板中埋设的源极区域和漏极区域; （e）在所述孔中和所述堆叠单元上形成氧化物层; 和（f）进行化学机械抛光（CMP）工艺以除去层叠单元上方的氧化物层和孔外。

8. 发明申请

US20080123082A1 APC SYSTEM AND MULTIVARIATE MONITORING METHOD FOR PLASMA PROCESS MACHINE 有权
标题翻译： APC系统和等离子体处理机多重监测方法
公开(公告)号：US20080123082A1
公开(公告)日：2008-05-29
申请号：US11737541
申请日：2007-04-19
申请人： Tuung LUOH , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
发明人： Tuung LUOH , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
IPC分类号： G01N21/00
CPC分类号： G01N21/68 , H01J37/32935 , H01J37/32972
摘要： An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.
摘要翻译：提供了一种用于等离子体处理机的先进过程控制（APC）系统，其包括至少一个光发射光谱（OES）系统和APC分析装置。 OES系统用于监测等离子体处理机中的测试对象。 APC分析装置用于分析从OES系统接收到的数据。

9. 发明授权

US08653592B2 Isolation structure, non-volatile memory having the same, and method of fabricating the same 有权
标题翻译：隔离结构，具有相同的非易失性存储器及其制造方法
公开(公告)号：US08653592B2
公开(公告)日：2014-02-18
申请号：US13291374
申请日：2011-11-08
申请人： Ming-Da Cheng , Chin-Tsan Yeh , Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
发明人： Ming-Da Cheng , Chin-Tsan Yeh , Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
IPC分类号： H01L29/78 , H01L29/66 , H01L29/76 , H01L29/792
CPC分类号： H01L21/76229 , H01L21/76205
摘要： A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c) forming a dielectric material on the stop layer so as to allow the rest of the recess to be filled with the dielectric material; (d) removing the dielectric material over the base by performing a chemical mechanical polishing (CMP) process until a part of the stop layer is exposed so as to form a dielectric layer in the recess; and (e) removing a part of the stop layer, wherein the another part of the stop layer and the dielectric layer filled in the recess constitute the isolation structure.
摘要翻译：一种形成隔离结构的方法，包括：（a）提供具有凹部的基部; （b）在基座和凹槽中形成停止层; （c）在所述阻挡层上形成电介质材料，以允许所述凹部的其余部分填充所述电介质材料; （d）通过进行化学机械抛光（CMP）工艺在基底上去除电介质材料，直到一部分停止层被暴露以在凹槽中形成电介质层; 和（e）去除所述阻挡层的一部分，其中所述阻挡层的另一部分和填充在所述凹部中的所述电介质层构成所述隔离结构。

10. 发明授权

US08520194B2 Method of forming a deposited material by utilizing a multi-step deposition/etch/deposition (D/E/D) process 有权
标题翻译：通过利用多步沉积/蚀刻/沉积（D / E / D）工艺形成沉积材料的方法
公开(公告)号：US08520194B2
公开(公告)日：2013-08-27
申请号：US12248547
申请日：2008-10-09
申请人： Tuung Luoh , Sheng-Hui Hsieh , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
发明人： Tuung Luoh , Sheng-Hui Hsieh , Shing-Ann Luo , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
IPC分类号： G01N21/00
CPC分类号： H01J37/32972 , G01N21/68 , H01J37/32935
摘要： An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.
摘要翻译：提供了一种用于等离子体处理机的先进过程控制（APC）系统，其包括至少一个光发射光谱（OES）系统和APC分析装置。 OES系统用于监测等离子体处理机中的测试对象。 APC分析装置用于分析从OES系统接收到的数据。

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