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    • 1. 发明申请
    • Scanning electron microscope and a method for evaluating accuracy of repeated measurement using the same
    • 扫描电子显微镜和使用其进行重复测量的精度的评估方法
    • US20050205780A1
    • 2005-09-22
    • US10988522
    • 2004-11-16
    • Ryo NakagakiHiroki KawadaChie ShishidoMayuka Oosaki
    • Ryo NakagakiHiroki KawadaChie ShishidoMayuka Oosaki
    • G01B15/00G01N23/00G01N23/225G03C5/00H01J37/28
    • G01N23/225
    • The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.
    • 本发明涉及一种CDSEM(扫描电子显微镜),其能够以高精度评估和呈现作为工具的测量重复性,而不受半导体图案的微小化倾向于增加的微细形状的波动的影响, 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能,当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时,执行与粗糙度模板图像的匹配,以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差,然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。
    • 2. 发明授权
    • Scanning electron microscope and a method for evaluating accuracy of repeated measurement using the same
    • 扫描电子显微镜和使用其进行重复测量的精度的评估方法
    • US07164127B2
    • 2007-01-16
    • US10988522
    • 2004-11-16
    • Ryo NakagakiHiroki KawadaChie ShishidoMayuka Oosaki
    • Ryo NakagakiHiroki KawadaChie ShishidoMayuka Oosaki
    • G01N23/00
    • G01N23/225
    • The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.
    • 本发明涉及一种CDSEM(扫描电子显微镜),其能够以高精度评估和呈现作为工具的测量重复性,而不受半导体图案的微小化倾向于增加的微细形状的波动的影响, 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能,当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时,执行与粗糙度模板图像的匹配,以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差,然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。
    • 3. 发明授权
    • Measuring method and its apparatus
    • 测量方法及其装置
    • US07408155B2
    • 2008-08-05
    • US11202146
    • 2005-08-12
    • Mayuka OosakiHiroki KawadaRyo NakagakiChie Shishido
    • Mayuka OosakiHiroki KawadaRyo NakagakiChie Shishido
    • G03F7/20G03F7/40
    • G01N23/225
    • A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.
    • 使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括:通过拾取样品的图像获得样品的二次电子图像 使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓,所述多个图案的横截面具有已知的形状和尺寸,并且是不同的 形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。
    • 6. 发明申请
    • Mesuring method and its apparatus
    • Mesuring方法及其装置
    • US20060060774A1
    • 2006-03-23
    • US11202146
    • 2005-08-12
    • Mayuka OosakiHiroki KawadaRyo NakagakiChie Shishido
    • Mayuka OosakiHiroki KawadaRyo NakagakiChie Shishido
    • G01N23/00
    • G01N23/225
    • A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.
    • 使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括:通过拾取样品的图像获得样品的二次电子图像 使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓,所述多个图案的横截面具有已知的形状和尺寸并且是不同的 形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。
    • 7. 发明授权
    • Scanning electron microscope, method for measuring a dimension of a pattern using the same, and apparatus for correcting difference between scanning electron microscopes
    • 扫描电子显微镜,用于测量使用其的图案的尺寸的方法,以及用于校正扫描电子显微镜之间的差异的装置
    • US07408154B2
    • 2008-08-05
    • US11260187
    • 2005-10-28
    • Mayuka OosakiChie ShishidoHiroki KawadaTatsuya Maeda
    • Mayuka OosakiChie ShishidoHiroki KawadaTatsuya Maeda
    • G01N23/00G21K7/00
    • H01J37/28H01J37/222H01J2237/221H01J2237/2826
    • As measurement accuracy required for the scanning electron microscope (SEM) for measuring a pattern width becomes stringent, a technique of reducing the difference in a measured dimension between the SEM's is desired. However, the conventional technique of evaluating the difference in a measured dimension between the SEM's cannot separate the difference in a measured dimension between the SEM's themselves and a dimensional change resulting from deformation of the pattern itself. Moreover, the technique of reducing the difference in a measured dimension between the SEM's needs an operator for reducing the difference in a measured dimension between the SEM's for each measurement pattern shape. In this invention, a pattern at the same position is measured for a plurality of times with each SEM, and a different between extrapolated values of measured values obtained by the respective SEM's is calculated, whereby separation between the difference in a measured dimension between the SEM's and a dimensional change resulting from deformation of the pattern itself is made possible. Moreover, matching electron beam image profiles between the SEM's using an operator that simulates a difference in beam diameter between the SEM's makes it possible to reduce the difference in a measured dimension between the SEM's, not depending on a dimensional measurement pattern shape.
    • 由于用于测量图形宽度的扫描电子显微镜(SEM)所需的测量精度变得严格,所以希望减少SEM之间的测量尺寸差异的技术。 然而,评估SEM之间的测量尺寸差异的常规技术不能分离SEM本身之间的测量尺寸与由图案本身的变形引起的尺寸变化之间的差异。 此外,减少SEM之间的测量尺寸的差异的技术需要一个操作者,用于减小每个测量图案形状的SEM之间的测量尺寸的差异。 在本发明中,通过各SEM测量同一位置的图案多次,并且计算通过各SEM得到的测量值的外推值之间的差异,由此SEM之间的测量尺寸差异之间的差异 并且由于图案本身的变形引起的尺寸变化成为可能。 此外,使用模拟SEM之间的光束直径差的SEM的SEM之间的匹配电子束图像轮廓可以减小SEM之间的测量尺寸的差异,而不依赖于尺寸测量图案形状。
    • 8. 发明授权
    • Charged particle beam apparatus and methods for capturing images using the same
    • 带电粒子束装置及使用该装置拍摄图像的方法
    • US07807980B2
    • 2010-10-05
    • US11647348
    • 2006-12-29
    • Chie ShishidoMayuka OosakiMitsugu SatoHiroki KawadaTatsuya Maeda
    • Chie ShishidoMayuka OosakiMitsugu SatoHiroki KawadaTatsuya Maeda
    • G21K7/00A61N5/00G21G5/00
    • H01J37/263H01J37/265H01J37/28H01J2237/2826
    • The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.
    • 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸(CD值)的带电粒子束装置。 对于本发明,使用用于校准的样品,其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时,根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此,本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法,以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。
    • 10. 发明授权
    • Tool-to-tool matching control method and its system for scanning electron microscope
    • 刀具对刀匹配控制方法及其扫描电子显微镜系统
    • US08003940B2
    • 2011-08-23
    • US12349751
    • 2009-01-07
    • Mayuka OosakiChie ShishidoHiroki KawadaTatsuya Maeda
    • Mayuka OosakiChie ShishidoHiroki KawadaTatsuya Maeda
    • H01J37/28H01J37/256G01N23/00
    • H01J37/28H01J2237/282
    • A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern formed on a wafer, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern formed on the wafer by using each of the plural scanning electron microscopes.
    • 用于控制多个扫描电子显微镜之间的工具对工具差异的系统包括:测量单元,用于基于通过成像获得的二次电子图像提取的信息来测量多个扫描电子显微镜之间的工具对工具差异 在晶片上形成的参考图案,用于监视多个扫描电子显微镜中的每一个的工具状态的工具状态监视单元和用于在屏幕上显示多个扫描电子显微镜之间的工具与工具之间的差异之间的关系的输出单元 以及由工具状态监视单元监视的多个扫描电子显微镜中的每一个的工具状态。 工具状态监视单元通过使用多个扫描电子显微镜中的每一个对成像在晶片上的参考图案进行成像,监视多个扫描电子显微镜中的每一个的工具状态。