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1. 发明授权

US07425477B2 Manufacturing method of thin film transistor including implanting ions through polysilicon island and into underlying buffer layer 有权
标题翻译：薄膜晶体管的制造方法，包括通过多晶硅岛注入离子并进入下面的缓冲层
公开(公告)号：US07425477B2
公开(公告)日：2008-09-16
申请号：US11306105
申请日：2005-12-16
申请人： Chia-Nan Shen , Wen-Chun Yeh , Chia-Chien Chen , Bing-Wei Wu , Hung-Chi Liao
发明人： Chia-Nan Shen , Wen-Chun Yeh , Chia-Chien Chen , Bing-Wei Wu , Hung-Chi Liao
IPC分类号： H01L21/84
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1288
摘要： A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.
摘要翻译：提供了薄膜晶体管的制造方法。在衬底上形成缓冲层，然后在其上形成第一和第二多晶硅岛。在基板上形成栅极绝缘层，在其上形成第一和第二栅极。在基板上形成牺牲层，并在其上形成光致抗蚀剂层。通过使用光致抗蚀剂层作为掩模去除第一多晶硅岛上方的牺牲层。执行第一离子注入工艺以形成第一源极/漏极。去除光致抗蚀剂层，并执行第二离子注入工艺以形成第二源极/漏极。同时，使用第二离子注入工艺将离子注入到位于第二栅极两侧下方的缓冲层中。在去除牺牲层后进行轻掺杂离子注入工艺。

2. 发明申请

US20070122949A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US20070122949A1
公开(公告)日：2007-05-31
申请号：US11306105
申请日：2005-12-16
申请人： Chia-Nan Shen , Wen-Chun Yeh , Chia-Chien Chen , Bing-Wei Wu , Hung-Chi Liao
发明人： Chia-Nan Shen , Wen-Chun Yeh , Chia-Chien Chen , Bing-Wei Wu , Hung-Chi Liao
IPC分类号： H01L21/84
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1288
摘要： A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.
摘要翻译：提供了薄膜晶体管的制造方法。在衬底上形成缓冲层，然后在其上形成第一和第二多晶硅岛。在基板上形成栅极绝缘层，在其上形成第一和第二栅极。在基板上形成牺牲层，并在其上形成光致抗蚀剂层。通过使用光致抗蚀剂层作为掩模去除第一多晶硅岛上方的牺牲层。执行第一离子注入工艺以形成第一源极/漏极。去除光致抗蚀剂层，并执行第二离子注入工艺以形成第二源极/漏极。同时，使用第二离子注入工艺将离子注入到位于第二栅极两侧下方的缓冲层中。在去除牺牲层后进行轻掺杂离子注入工艺。

3. 发明申请

US20090057679A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20090057679A1
公开(公告)日：2009-03-05
申请号：US12168163
申请日：2008-07-07
申请人： Chin-Chuan Lai , Wen-Chun Yeh
发明人： Chin-Chuan Lai , Wen-Chun Yeh
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/4908 , H01L29/66757 , H01L29/78621
摘要： A manufacturing method of a TFT is provided. A polysilicon island, a gate insulating layer and a gate are sequentially formed on a substrate. LDD regions are formed in the polysilicon island below two sides of the gate, while the polysilicon island below the gate is a channel region. A metal oxidation process is performed to form a gate oxidation layer on the gate. A source and a drain are formed in the polysilicon island below two sides of the gate oxidation layer. A dielectric layer is formed on the gate insulating layer. Portions of the dielectric layer and the gate insulating layer are removed to expose a portion of the source and drain, and a patterned dielectric layer and a patterned gate insulating layer are formed. A source and a drain conductive layers electrically respectively connected to the source and the drain are formed on the patterned dielectric layer.
摘要翻译：提供了TFT的制造方法。在基板上依次形成多晶硅岛，栅极绝缘层和栅极。 LDD区域形成在栅极两侧以下的多晶硅岛中，栅极下方的多晶硅岛是沟道区。进行金属氧化处理以在栅极上形成栅极氧化层。源极和漏极形成在栅极氧化层的两侧下方的多晶硅岛中。在栅极绝缘层上形成介电层。除去介电层和栅极绝缘层的一部分以露出源极和漏极的一部分，并且形成图案化的电介质层和图案化的栅极绝缘层。电荷分别连接到源极和漏极的源极和漏极导电层形成在图案化的介电层上。

4. 发明公开

US20230172472A1 BIOLOGICAL ENERGY SIGNAL ACQUISITION AND CONVERSION DEVICE 审中-公开
公开(公告)号：US20230172472A1
公开(公告)日：2023-06-08
申请号：US17636648
申请日：2019-08-28
申请人： Chun-Fang Cheng , Ting-Han Hong , Po-Yuan Kung , Jia-De Ni , Hsun-Tsan Shen , Wen-Chun Yeh
发明人： Chun-Fang Cheng , Ting-Han Hong , Po-Yuan Kung , Jia-De Ni , Hsun-Tsan Shen , Wen-Chun Yeh
IPC分类号： A61B5/05
CPC分类号： A61B5/05
摘要： A biological energy signal acquisition and conversion device comprises: a signal acquisition module, enhancing a biological energy signal generated by an original biological energy body, and extracting the signal; a signal processing module, receiving the extracted original biological energy signal and filtering and amplifying the signal, and generating an output energy signal; and a signal output unit, being able to enhance an output function in cooperation with a magnetic substance, and output the energy signal to a biological energy carrier. By shortening the distance between the original biological energy body and a signal receiving unit, and using the magnetic substance to excite the original biological energy body, the strength of the received extracted original biological energy signal is enhanced, and the noise proportion is greatly reduced, reducing the technical complexity and costs for back-end signal processing, and improving the effect of a biological energy signal.

5. 发明授权

US06302283B1 Display rack 失效
标题翻译：展示架
公开(公告)号：US06302283B1
公开(公告)日：2001-10-16
申请号：US09621539
申请日：2000-07-21
申请人： Wen-Chun Yeh
发明人： Wen-Chun Yeh
IPC分类号： A47F500
CPC分类号： A47F5/116
摘要： The present invention relates to a display rack primarily including a main frame made of light-weight plastic corrugated board and a number of movable partitions supported by a number of supporting pieces fixed on the main frame so that the main frame is divided by the partitions into a number of holding rooms. The present invention is characterized in that the corrugated board of the main frame has a plurality of grooved rails longitudinally disposed in parallel. The supporting pieces are made of hard material and include at least one blocking extension strip at one side thereof which is vertical to the surface of the supporting pieces. The surface of the supporting piece is fitted with a locking groove near the bottom end of the blocking extension strip in order that the protruding blocking extension strip of the supporting piece is able to be inserted into the grooved rails while the locking groove near the bottom end of the blocking extension strip is fixed on the surface of the main frame. Accordingly, stable supporting elements on which the partitions are placed are created.
摘要翻译：本发明涉及一种显示架，主要包括由轻质塑料瓦楞纸板制成的主框架，以及多个可移动分隔件，其由固定在主框架上的多个支撑件支撑，使得主框架被分隔件分割成一些举办房间。本发明的特征在于，主框架的波纹板具有纵向纵向设置的多个槽槽轨道。支撑件由硬质材料制成，并且在其一侧垂直于支撑件的表面包括至少一个阻挡延伸条。支撑件的表面在阻挡延伸条的底端附近具有锁定槽，以便支撑件的突出的阻挡延伸条能够插入带槽的轨道中，而靠近底端的锁定槽阻挡延伸条固定在主框架的表面上。因此，产生了分隔件放置在其上的稳定的支撑元件。

6. 发明申请

US20100101640A1 Optical structure and solar cell using the same 审中-公开
标题翻译：光学结构和太阳能电池使用相同
公开(公告)号：US20100101640A1
公开(公告)日：2010-04-29
申请号：US12384510
申请日：2009-04-06
申请人： Jain-Cheng Chen , Chung-Ying Wu , Hsiung-Yu Tsai , Wen-Chun Yeh , Chen-Hsiang Hsu , Tim Hsiao , Shih-Chi Chien
发明人： Jain-Cheng Chen , Chung-Ying Wu , Hsiung-Yu Tsai , Wen-Chun Yeh , Chen-Hsiang Hsu , Tim Hsiao , Shih-Chi Chien
IPC分类号： H01L31/0236 , H01L31/0232 , H01L31/04 , G02B27/12
CPC分类号： G02B3/08 , F24S23/31 , H01L31/0543 , Y02E10/52
摘要： An optical structure is characterized by improving a primary lens of a photovoltaic concentrator system. The optical structure is accomplished by properly dividing the primary lens, determining required optical operational regions, and arranging the optical operational regions basing on an identical location into an annular array, thereby forming the complete optical structure. The optical structure facilitates enhancing uniformity of light distribution throughout the optical operational regions, improving photoelectric conversion efficiency of a solar cell having the optical structure, and reducing operational distance between the primary lens and the solar cell.
摘要翻译：光学结构的特征在于改进光伏集中器系统的主透镜。光学结构通过适当地划分主透镜，确定所需的光学操作区域，并将基于相同位置的光学操作区域布置成环形阵列，从而形成完整的光学结构来实现。光学结构有助于提高整个光学操作区域中光分布的均匀性，提高具有光学结构的太阳能电池的光电转换效率，并且减小主透镜和太阳能电池之间的操作距离。

7. 发明申请

US20080254578A1 Method for fabricating thin film transistors 审中-公开
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20080254578A1
公开(公告)日：2008-10-16
申请号：US11882539
申请日：2007-08-02
申请人： Chih-Jen Shih , Wen-Chun Yeh , Min-Che Ho , Wen-Chi Yang
发明人： Chih-Jen Shih , Wen-Chun Yeh , Min-Che Ho , Wen-Chi Yang
IPC分类号： H01L21/84
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/02675 , H01L27/1285
摘要： A method for fabricating thin film transistors is disclosed. An amorphous silicon film is formed on a substrated and selectively irradiated with a laser beam for lateral growth to form a plurality of polysilicon regions. The whole surface of the substrate is then oxidized and irradiated with exicer laser annealing.
摘要翻译：公开了制造薄膜晶体管的方法。一个非晶硅膜形成在一个底层上并选择性地用激光束照射以进行横向生长以形成多个多晶硅区域。然后将基板的整个表面氧化并用激光退火进行照射。

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