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1. 发明授权

US06171764B2 Method for reducing intensity of reflected rays encountered during process of photolithography 有权
标题翻译：降低光刻过程中遇到的反射光线强度的方法
公开(公告)号：US06171764B2
公开(公告)日：2001-01-09
申请号：US09138233
申请日：1998-08-22
申请人： Chia-Lin Ku , Wen-Ping Yen
发明人： Chia-Lin Ku , Wen-Ping Yen
IPC分类号： G03C500
CPC分类号： H01L21/0276 , G03F7/091
摘要： This invention provides methods for reducing the intensity of reflected rays encountered during the process of photolithography. By reducing the intensity of reflected ray, the pattern distortions associated with the interference from secondary rays can be minimized. In addition, this method for reducing the intensity of reflected ray can also eliminate the footing effect of other known methods in which the dielectric ARC layer is first deposited on the underlying layer, followed by the subsequent photolithography process of coating exposing, and developing.
摘要翻译：本发明提供降低在光刻过程中遇到的反射光线的强度的方法。通过降低反射光线的强度，可以将与来自二次射线的干涉相关联的图案畸变最小化。另外，用于降低反射光线强度的方法也可以消除其中首先沉积介质ARC层的其它已知方法的基础效应，随后是随后的曝光和显影的光刻工艺。

2. 发明授权

US6156597A Additional buffer layer for eliminating ozone/tetraethylorthosilicate sensitivity on an arbitrary trench structure 失效
标题翻译：用于消除任意沟槽结构上的臭氧/原硅酸四乙酯敏感性的附加缓冲层
公开(公告)号：US6156597A
公开(公告)日：2000-12-05
申请号：US94347
申请日：1998-06-09
申请人： Wen-Ping Yen , Chia-Lin Ku , Chong-Che Lee
发明人： Wen-Ping Yen , Chia-Lin Ku , Chong-Che Lee
IPC分类号： H01L21/316 , H01L21/334 , H01L21/8242
CPC分类号： H01L29/66181 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612
摘要： A method of fabricating a semiconductor device is provided including the steps of:(a) forming one or more protrusions on a semiconductor surface,(b) forming a first O.sub.x /TEOS film on top and side surfaces of the protrusions and surface area portions of the semiconductor surface separating the protrusions from each other, if any, and(c) forming a second O.sub.3 /TEOS film on, and covering, the first film.Illustratively, the protrusions have nitride regions at their peaks. The first film can be a low pressure (e.g., 30-70 torr) O.sub.3 /TEOS film or a plasma enhanced chemical vapor deposition (PECVD) O.sub.2 /TEOS film. The second film is a high pressure (e.g., 200-600 torr) O.sub.3 /TEOS film.The high pressure O.sub.3 /TEOS film avoids all of the disadvantages of the prior art. The low pressure O.sub.3 /TEOS film or PECVD O.sub.2 /TEOS film covers the nitride region of the protrusion so that the high pressure O.sub.3 /TEOS film will continuously cover the entire structure with a uniform thickness.
摘要翻译：提供一种制造半导体器件的方法，包括以下步骤：（a）在半导体表面上形成一个或多个突起，（b）在凸起和表面区域的顶部和侧表面上形成第一Ox / TEOS膜所述半导体表面将所述突起彼此分离（如果有的话），和（c）在所述第一膜上形成第二O 3 / TEOS膜并覆盖所述第一膜。示例性地，突起在其峰处具有氮化物区域。第一膜可以是低压（例如，30-70托）O 3 / TEOS膜或等离子体增强化学气相沉积（PECVD）O 2 / TEOS膜。第二个膜是高压（例如，200-600托）O 3 / TEOS膜。高压O3 / TEOS膜避免了现有技术的所有缺点。低压O3 / TEOS膜或PECVD O2 / TEOS膜覆盖突起的氮化物区域，使得高压O 3 / TEOS膜将以均匀的厚度连续覆盖整个结构。

3. 发明申请

US20070054490A1 Semiconductor process for preventing layer peeling in wafer edge area and method for manufacturing interconnects 审中-公开
标题翻译：用于防止晶片边缘区域中的层剥离的半导体工艺和用于制造互连的方法
公开(公告)号：US20070054490A1
公开(公告)日：2007-03-08
申请号：US11218457
申请日：2005-09-02
申请人： Yen-Hung Chen , Wen-Ping Yen , Su-Ling Tseng
发明人： Yen-Hung Chen , Wen-Ping Yen , Su-Ling Tseng
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/31144 , H01L21/0209
摘要： A semiconductor process for preventing the layer on a wafer edge from peeling is provided. First, a dielectric layer is formed on the front side of a substrate. Then, a photoresist layer is formed to cover the front side and part of the backside of the substrate. Thereafter, an edge rinsing process is carried out only on the backside of the substrate to remove the photoresist layer on the back of the substrate while retaining the photoresist layer on the wafer edge area.
摘要翻译：提供了用于防止晶片边缘上的层剥落的半导体工艺。首先，在基板的正面形成介电层。然后，形成光致抗蚀剂层以覆盖基板的正面和背面的一部分。此后，仅在基板的背面进行边缘漂洗处理，以便将基板的背面上的光刻胶层保持在晶片边缘区域上。

4. 发明授权

US5868843A Detachable sponge device for spin-coating machines 失效
标题翻译：可剥离海绵装置用于旋涂机
公开(公告)号：US5868843A
公开(公告)日：1999-02-09
申请号：US783103
申请日：1997-01-14
申请人： Yu-Chen Yang , Chang-Chi Huang , Wen-Ping Yen
发明人： Yu-Chen Yang , Chang-Chi Huang , Wen-Ping Yen
IPC分类号： B05C11/08 , B05C11/10 , H01L21/00 , B05C21/00
CPC分类号： H01L21/6715 , B05C11/08 , B05C11/1039
摘要： A detachable sponge device for a spin coating machine used to coat a liquid material over a semiconductor wafer is provided. The detachable sponge device is used to prevent the solvent that is jetted on the edge of the wafer from being oversprayed elsewhere on the wafer. The detachable sponge device is composed of a curved mounting piece and a corrugated piece of sponge attached on the curved inner side of the mounting piece. The mounting piece can be detachably mounted on the spin coating machine. The corrugated piece of sponge can absorb splattered particles of solvent from the wafer which can thus be prevented from bouncing back onto the wafer. The planarization of the coating of SOG on the wafer thus will not be affected by splattering particles of the solvent. Excellent results of planarization of SOG or photoresist layers can thus be achieved.
摘要翻译：提供了一种用于在半导体晶片上涂覆液体材料的旋涂机的可拆卸海绵装置。可拆卸的海绵装置用于防止喷射在晶片边缘上的溶剂在晶片上的其他地方被过度喷涂。可拆卸海绵装置由安装在安装件的弯曲内侧上的弯曲安装件和波纹状海绵构成。安装件可拆卸地安装在旋涂机上。波纹状海绵片可以从晶片吸收飞溅的溶剂颗粒，从而可以防止其从反弹回到晶片上。因此，晶片上的SOG涂层的平面化不会受到溶剂的飞溅颗粒的影响。因此可以实现SOG或光致抗蚀剂层的平坦化的优异结果。

5. 发明申请

US20070066055A1 METHOD OF FABRICATING CONDUCTIVE LAYER 审中-公开
标题翻译：制导导电层的方法
公开(公告)号：US20070066055A1
公开(公告)日：2007-03-22
申请号：US11162696
申请日：2005-09-20
申请人： Chien-Hsin Huang , Wen-Ping Yen
发明人： Chien-Hsin Huang , Wen-Ping Yen
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , H01L21/321 , H01L21/32134 , H01L21/32135
摘要： A method of fabricating a patterned conductive layer is provided. First, a conductive layer whose material includes at least aluminum-copper (Al—Cu) alloy is formed on a substrate. Then, a heat treatment process is performed to heat the conductive layer to a temperature higher than the phase change temperature of the Al—Cu alloy. Next, the conductive layer is patterned. The method in the present invention can avoid the formation of metallic educt and facilitate subsequent etching processes.
摘要翻译：提供了制造图案化导电层的方法。首先，在基板上形成材料至少包含铝 - 铜（Al-Cu）合金的导电层。然后，进行热处理工序，将导电层加热到比Al-Cu合金的相变温度高的温度。接下来，对导电层进行图案化。本发明的方法可以避免金属离子的形成并促进随后的蚀刻工艺。

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