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1. 发明授权

US5868843A Detachable sponge device for spin-coating machines 失效
标题翻译：可剥离海绵装置用于旋涂机
公开(公告)号：US5868843A
公开(公告)日：1999-02-09
申请号：US783103
申请日：1997-01-14
申请人： Yu-Chen Yang , Chang-Chi Huang , Wen-Ping Yen
发明人： Yu-Chen Yang , Chang-Chi Huang , Wen-Ping Yen
IPC分类号： B05C11/08 , B05C11/10 , H01L21/00 , B05C21/00
CPC分类号： H01L21/6715 , B05C11/08 , B05C11/1039
摘要： A detachable sponge device for a spin coating machine used to coat a liquid material over a semiconductor wafer is provided. The detachable sponge device is used to prevent the solvent that is jetted on the edge of the wafer from being oversprayed elsewhere on the wafer. The detachable sponge device is composed of a curved mounting piece and a corrugated piece of sponge attached on the curved inner side of the mounting piece. The mounting piece can be detachably mounted on the spin coating machine. The corrugated piece of sponge can absorb splattered particles of solvent from the wafer which can thus be prevented from bouncing back onto the wafer. The planarization of the coating of SOG on the wafer thus will not be affected by splattering particles of the solvent. Excellent results of planarization of SOG or photoresist layers can thus be achieved.
摘要翻译：提供了一种用于在半导体晶片上涂覆液体材料的旋涂机的可拆卸海绵装置。可拆卸的海绵装置用于防止喷射在晶片边缘上的溶剂在晶片上的其他地方被过度喷涂。可拆卸海绵装置由安装在安装件的弯曲内侧上的弯曲安装件和波纹状海绵构成。安装件可拆卸地安装在旋涂机上。波纹状海绵片可以从晶片吸收飞溅的溶剂颗粒，从而可以防止其从反弹回到晶片上。因此，晶片上的SOG涂层的平面化不会受到溶剂的飞溅颗粒的影响。因此可以实现SOG或光致抗蚀剂层的平坦化的优异结果。

2. 发明申请

US20120049227A1 LIGHT-EMITTING DEVICES 有权
标题翻译：发光装置
公开(公告)号：US20120049227A1
公开(公告)日：2012-03-01
申请号：US13221369
申请日：2011-08-30
申请人： Chao-Hsing CHEN , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
发明人： Chao-Hsing CHEN , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC分类号： H01L33/60
CPC分类号： H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.
摘要翻译：本申请的实施例的发光装置包括设置有第一主侧，第二主侧和有源层的半导体层序列; 形成在半导体层序列中的倾斜沟槽，具有靠近第二主侧的顶端，底端以及连接顶端和底端的内侧壁。在该实施例中，内侧壁是倾斜表面。发光装置还包括设置在斜面沟槽和第二主侧的内侧壁上的电介质层; 形成在所述电介质层上的第一金属层; 载体基板; 以及连接载体衬底和半导体层序列的第一连接层。

3. 发明授权

US5861345A In-situ pre-PECVD oxide deposition process for treating SOG 失效
标题翻译：用于处理SOG的原位预-PECVD氧化物沉积工艺
公开(公告)号：US5861345A
公开(公告)日：1999-01-19
申请号：US924904
申请日：1997-09-08
申请人： Chin-hao Chou , Yu-Chen Yang , Shing-Hsiang Hung
发明人： Chin-hao Chou , Yu-Chen Yang , Shing-Hsiang Hung
IPC分类号： H01L21/3105 , H01L21/768 , H01L23/532 , H01L21/31
CPC分类号： H01L21/76829 , H01L21/31051 , H01L21/76819 , H01L21/76826 , H01L21/76828 , H01L23/5329 , H01L2924/0002
摘要： An in situ inter-dielectric process is disclosed for forming multilevel metal structures. The process includes the steps of:(1) forming an SOG layer on an uneven semiconductor surface,(2) treating a surface of the SOG layer with a plasma in a PECVD chamber, and(3) forming a PECVD oxide layer on the treated surface in the same PECVD chamber.The operating parameters for performing the in situ treatment are as follows:______________________________________Gas: N.sub.2 O or C.sub.2 F.sub.6Pressure: 4-6 TorrTemperature: 300-400.degree. C.Power: 200-400 WattsGap: 300-800 milFlow: 500-1500 sccmTime: 5-15 sec______________________________________Thus, the treatment can be performed in the same PECVD chamber used to form a PECVD oxide layer on the treated SOG layer.Furthermore, the SOG layer surface may be oxidized to produce an organic deficient SiO.sub.x layer at the surface of the SOG layer prior to performing the treatment step (2).
摘要翻译：公开了用于形成多层金属结构的原位介电过程。该方法包括以下步骤：（1）在不均匀的半导体表面上形成SOG层，（2）在PECVD室中用等离子体处理SOG层的表面，以及（3）在被处理的层上形成PECVD氧化物层在同一PECVD室中的表面。用于进行原位处理的操作参数如下： - 气体：N2O或C2F6 - 压力：4-6乇 - 温度：300-400℃ - 功率：200-400瓦 - 间隙：300-800密耳 - 流量：500-1500sccm - 时间：5-15秒 - 因此，处理可以在用于在经处理的SOG层上形成PECVD氧化物层的相同PECVD室中进行。此外，在进行处理步骤（2）之前，SOG层表面可以被氧化以在SOG层的表面处产生有机缺陷SiO x层。

4. 发明申请

US20130049051A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20130049051A1
公开(公告)日：2013-02-28
申请号：US13596528
申请日：2012-08-28
申请人： Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yl-Wen Ku , Hung-Che Chen , Chih-Nan Lin
发明人： Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yl-Wen Ku , Hung-Che Chen , Chih-Nan Lin
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/385 , H01L33/42 , H01L33/44
摘要： Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.
摘要翻译：公开了一种发光器件，包括：半导体叠层层; 半导体堆叠层上的反射层; 第一缓冲层，包括在反射层上包含金属元素和非金属元素的化合物; 第一电极; 以及设置在第一缓冲层和第一电极之间的电绝缘层。

5. 发明授权

US08872204B2 Light-emitting device having a trench in a semiconductor layer 有权
标题翻译：在半导体层中具有沟槽的发光器件
公开(公告)号：US08872204B2
公开(公告)日：2014-10-28
申请号：US13152026
申请日：2011-06-02
申请人： Yu-Chen Yang , Li-Ping Jou , Jui-Hung Yeh , Chien-Fu Shen
发明人： Yu-Chen Yang , Li-Ping Jou , Jui-Hung Yeh , Chien-Fu Shen
IPC分类号： H01L33/60 , H01L33/38 , H01L33/20 , H01L33/64 , H01L33/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/20 , H01L33/641 , H01L2224/48463 , H01L2933/0083
摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm2 and 6.2×104 μm2.
摘要翻译：发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中沟槽，并且在第二半导体层上形成第二导电结构。第一导电结构包括彼此电接触的第一电极和第一焊盘。第二导电结构包括彼此电接触的第二电极和第二焊盘。此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×10 4μm2和6.2×10 4μm2之间。

6. 发明授权

US09159881B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09159881B2
公开(公告)日：2015-10-13
申请号：US13596528
申请日：2012-08-28
申请人： Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yi-Wen Ku , Hung-Che Chen , Chih-Nan Lin
发明人： Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yi-Wen Ku , Hung-Che Chen , Chih-Nan Lin
IPC分类号： H01L33/38 , H01L33/42 , H01L33/10 , H01L33/40 , H01L33/44
CPC分类号： H01L33/405 , H01L33/385 , H01L33/42 , H01L33/44
摘要： Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.
摘要翻译：公开了一种发光器件，包括：半导体叠层层; 半导体堆叠层上的反射层; 第一缓冲层，包括在反射层上包含金属元素和非金属元素的化合物; 第一电极; 以及设置在第一缓冲层和第一电极之间的电绝缘层。

7. 发明授权

US08598614B2 Light-emitting devices 有权
公开(公告)号：US08598614B2
公开(公告)日：2013-12-03
申请号：US13221369
申请日：2011-08-30
申请人： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
发明人： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC分类号： H01L33/60
CPC分类号： H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

8. 发明授权

US08569775B2 Light-emitting diode (LED) array 有权
标题翻译：发光二极管（LED）阵列
公开(公告)号：US08569775B2
公开(公告)日：2013-10-29
申请号：US13428974
申请日：2012-03-23
申请人： Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
发明人： Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
摘要： An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
摘要翻译：具有N个发光二极管单元（N> = 3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉第二隔离层上的金属层，交叉金属层上的第一隔离层，第一隔离层上的导电连接层，导电连接层上的外延结构，外延结构上的第一电极层。发光二极管单元通过交叉金属层彼此电连接。

9. 发明申请

US20120241783A1 LED ARRAY 有权
标题翻译： LED阵列
公开(公告)号：US20120241783A1
公开(公告)日：2012-09-27
申请号：US13428974
申请日：2012-03-23
申请人： Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
发明人： Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
IPC分类号： H01L33/48
CPC分类号： H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
摘要： An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
摘要翻译：具有N个发光二极管单元（N≥3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉金属所述第二隔离层上的第一隔离层，所述交叉金属层上的第一隔离层，所述第一隔离层上的导电连接层，所述导电连接层上的外延结构，以及所述外延结构上的第一电极层。发光二极管单元通过交叉金属层彼此电连接。

10. 发明申请

US20110272727A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20110272727A1
公开(公告)日：2011-11-10
申请号：US13186225
申请日：2011-07-19
申请人： Chih-Tsung Su , Chun-Lung Tseng , Ching-Wei Chiu , Tao-Chi Chang , Chan-Yang Lu , Jia-Ming Yu , Yi-Chang Yu , Yu-Chen Yang
发明人： Chih-Tsung Su , Chun-Lung Tseng , Ching-Wei Chiu , Tao-Chi Chang , Chan-Yang Lu , Jia-Ming Yu , Yi-Chang Yu , Yu-Chen Yang
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/46
摘要： A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate.
摘要翻译：描述了一种发光二极管及其制造方法。发光二极管包括：导电基板，包括第一表面和与第一表面相对的第二表面; 反射器结构，其包括结合到所述导电基板的所述第一表面的导电反射器层和层叠在所述导电反射器层上的导电分布布拉格反射器（DBR）结构; 设置在反射器结构上的光源外延结构; 设置在所述发光体外延结构的一部分上的第一电极; 以及结合到导电基板的第二表面的第二电极。

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