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    • 3. 发明授权
    • Method and device for adaptively adjusting sound effect
    • 自适应调节声音效果的方法和装置
    • US09183846B2
    • 2015-11-10
    • US14361367
    • 2011-12-02
    • Chia Han Siong SamuelNi HuangHong Du
    • Chia Han Siong SamuelNi HuangHong Du
    • G10L21/00G10L21/0208H03G3/32H03G5/16H04M1/60
    • G10L21/0208G10L2021/02087H03G3/32H03G5/165H04M1/6016
    • A method and device for adaptively adjusting sound effect, and the method comprises: obtaining an energy value of the current ambient noise; receiving a first trigger instruction and adjusting the current output volume based on the energy value of the current ambient noise; while judging that the energy value of the current ambient noise is bigger than a first threshold, processing treble enhancement; while judging that the energy value of the current ambient noise is less than a second a sound threshold, processing bass enhancement. By collecting the voice data and detecting the speech activity on the voice data, when the first trigger instruction is received, the method can adjust the current volume and adjust the frequency response by the treble enhancement or the bass enhancement based on the energy value of the current ambient noise, thereby obtaining the better sound effect and easy to achieve.
    • 一种用于自适应调节声音效果的方法和装置,所述方法包括:获得当前环境噪声的能量值; 基于当前环境噪声的能量值接收第一触发指令并调整当前输出音量; 同时判断当前环境噪声的能量值大于第一阈值,处理高音增强; 同时判断当前环境噪声的能量值小于一秒钟的声阈值,处理低音增强。 通过收集语音数据并检测语音数据上的语音活动,当接收到第一个触发指令时,该方法可以通过高音增强或低音增强来调节当前音量并调节频率响应,基于 当前的环境噪声,从而获得更好的声音效果,易于实现。
    • 5. 发明授权
    • Advanced phase shift lithography and attenuated phase shift mask for narrow track width d write pole definition
    • 高级相移光刻和衰减相移掩模,用于窄轨宽d写磁极定义
    • US08192900B2
    • 2012-06-05
    • US12714159
    • 2010-02-26
    • Hong DuDouglas J. WernerYi Zheng
    • Hong DuDouglas J. WernerYi Zheng
    • G03F1/00
    • G03F1/32G03F1/00G11B5/1278G11B5/3116G11B5/3163
    • A method for patterning a wafer using a phase shifting photolithography that can produce a critical symmetrical 2-dimensional structure such as a magnetic write pole of a magnetic write head. In one aspect of the invention, a photolithographic mask has an opaque portion with narrow, transparent phase shifting regions at either side of the opaque portion. A non-phase shifted region extends beyond the narrow phase shifted portion at either side of the structure. The phase shifted regions are symmetrical about the opaque region so that the image produced on the wafer is completely symmetrical. In another aspect of the invention, a phase shifted region in formed in a transparent medium with non-phase shifted regions at either side of the phase shifted region. The transition between the phase shifted region and non-phase shifted region alone defines a pattern on the wafer, without the need for an opaque structure on the mask.
    • 使用可产生关键对称二维结构(诸如磁写头的磁写磁极)的相移光刻法来构图晶片的方法。 在本发明的一个方面,光刻掩模具有不透明部分,在不透明部分的任一侧具有窄的透明相移区域。 非相移区域在结构的任一侧延伸超过窄相移部分。 相移区域关于不透明区域是对称的,使得在晶片上产生的图像是完全对称的。 在本发明的另一方面中,形成在相移区域的任一侧上的具有非相移区域的透明介质中的相移区域。 相移区域和非相移区域之间的转变仅在晶片上限定了图案,而不需要掩模上的不透明结构。
    • 9. 发明申请
    • ADVANCED PHASE SHIFT LITHOGRAPHY AND ATTENUATED PHASE SHIFT MASK FOR NARROW TRACK WIDTH D WRITE POLE DEFINITION
    • 先进的相位移动平移和衰减相位切换掩码用于窄轨道宽度D写入点定义
    • US20110212388A1
    • 2011-09-01
    • US12714159
    • 2010-02-26
    • Hong DuDouglas J. WernerYi Zheng
    • Hong DuDouglas J. WernerYi Zheng
    • G03F1/00G03F7/20
    • G03F1/32G03F1/00G11B5/1278G11B5/3116G11B5/3163
    • A method for patterning a wafer using a phase shifting photolithography that can produce a critical symmetrical 2-dimensional structure such as a magnetic write pole of a magnetic write head. In one aspect of the invention, a photolithographic mask has an opaque portion with narrow, transparent phase shifting regions at either side of the opaque portion. A non-phase shifted region extends beyond the narrow phase shifted portion at either side of the structure. The phase shifted regions are symmetrical about the opaque region so that the image produced on the wafer is completely symmetrical. In another aspect of the invention, a phase shifted region in formed in a transparent medium with non-phase shifted regions at either side of the phase shifted region. The transition between the phase shifted region and non-phase shifted region alone defines a pattern on the wafer, without the need for an opaque structure on the mask.
    • 使用可产生关键对称二维结构(诸如磁写头的磁写磁极)的相移光刻法来构图晶片的方法。 在本发明的一个方面,光刻掩模具有不透明部分,在不透明部分的任一侧具有窄的透明相移区域。 非相移区域在结构的任一侧延伸超过窄相移部分。 相移区域关于不透明区域是对称的,使得在晶片上产生的图像是完全对称的。 在本发明的另一方面中,形成在相移区域的任一侧上的具有非相移区域的透明介质中的相移区域。 相移区域和非相移区域之间的转变仅在晶片上限定了图案,而不需要掩模上的不透明结构。