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1. 发明申请

US20100294359A1 PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 有权
标题翻译：在硅砂的正面形成网状电极的工艺
公开(公告)号：US20100294359A1
公开(公告)日：2010-11-25
申请号：US12783761
申请日：2010-05-20
申请人： Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
发明人： Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
IPC分类号： H01L31/0392 , H01L21/283 , H01L29/40
CPC分类号： H01L31/022433 , C03C8/02 , C03C8/10 , C03C8/24 , H01B1/16 , H01L31/022425 , Y02E10/50
摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.
摘要翻译：一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属糊剂A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥包含含有0.2至3重量％玻璃的无机物质的金属浆料B 玻璃料覆盖在底部指状线组上，其中金属糊料B以网格图案打印，该网格图案包括（i）薄的平行指线，形成叠加了底部指状线组的顶部一组指纹线，以及（ii）与指状物为直角，（3）烧制双面印刷的硅晶片，其中金属糊料B的无机物含量比金属膏A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

2. 发明申请

US20100013844A1 MEMORY AND PIXEL DATA STORING METHOD 审中-公开
标题翻译：存储和像素数据存储方法
公开(公告)号：US20100013844A1
公开(公告)日：2010-01-21
申请号：US12269167
申请日：2008-11-12
申请人： Cheng-Nan Lin
发明人： Cheng-Nan Lin
IPC分类号： G06F12/02
CPC分类号： G09G5/393 , G09G3/2037 , G09G2330/08
摘要： A memory includes at least one memory cell. The memory cell includes a first set of bits and a second set of bits for respectively storing first sub-pixel data and second sub-pixel data of pixel data. The first set of bits has a first fail bit. A least significant bit of the first sub-pixel data is stored at the first fail bit.
摘要翻译：存储器包括至少一个存储器单元。存储单元包括第一组位和第二组位，用于分别存储像素数据的第一子像素数据和第二子像素数据。第一组位具有第一个失败位。第一子像素数据的最低有效位存储在第一故障位。

3. 发明申请

US20110032237A1 CIRCUIT STRUCTURE 审中-公开
标题翻译：电路结构
公开(公告)号：US20110032237A1
公开(公告)日：2011-02-10
申请号：US12849144
申请日：2010-08-03
申请人： Cheng-Nan Lin
发明人： Cheng-Nan Lin
IPC分类号： G06F3/038
CPC分类号： G09G3/3688 , G09G3/3275 , G09G2310/0289
摘要： A circuit structure suitable for coupling between a sample register and a digital-to-analog converter in a source driver circuit is disclosed. The circuit structure includes a multi-function switch circuit and a control unit. The multi-function switch circuit is coupled to an elevation voltage terminal and a system ground terminal. The multi-function switch circuit has a positive input pole, a negative input pole and a positive output pole. The control unit is coupled to the positive input pole and a negative input pole. The control unit selectively conducts a positive input signal and a negative input signal from the sample register to the positive input pole and the negative input pole respectively according to a latch control signal. Accordingly, the multi-function switch circuit of the invention has two functions of voltage shifting and data latching.
摘要翻译：公开了一种适用于在源极驱动器电路中的采样寄存器与数模转换器之间耦合的电路结构。电路结构包括多功能开关电路和控制单元。多功能开关电路耦合到高程电压端子和系统接地端子。多功能开关电路具有正输入极，负输入极和正输出极。控制单元耦合到正输入极和负输入极。控制单元根据锁存控制信号有选择地将来自采样寄存器的正输入信号和负输入信号分别导向正输入极和负输入极。因此，本发明的多功能开关电路具有电压移位和数据锁存的两个功能。

4. 发明申请

US20100294360A1 PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 审中-公开
标题翻译：在硅砂的正面形成网状电极的工艺
公开(公告)号：US20100294360A1
公开(公告)日：2010-11-25
申请号：US12783768
申请日：2010-05-20
申请人： David Kent Anderson , Russell David Anderson , Giovanna Laudisio , Cheng-Nan Lin , Shih-Ming Kao , Chun-Kwei Wu
发明人： David Kent Anderson , Russell David Anderson , Giovanna Laudisio , Cheng-Nan Lin , Shih-Ming Kao , Chun-Kwei Wu
IPC分类号： H01L31/0392 , H01L21/283 , H01L29/40
CPC分类号： H01B1/16 , H01B1/22 , H01L31/022425 , Y02E10/50
摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer in a grid pattern which comprises (i) thin parallel finger lines forming a bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines to form a top set of finger lines superimposing the bottom set of finger lines, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.
摘要翻译：一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属膏A以网格图案印刷在ARC层上，其包括（i）形成底部指纹线的薄的平行指线和（ii）与直线相交的母线的直角，（2 ）将包含0-3％（重量）玻璃料的无机物质的金属糊料B印刷并干燥在底部的一组指纹上，以形成叠加底部指状线组的顶部一组指纹线，以及（3）烧制双面印刷的硅晶片，其中金属糊料B的无机含量比金属糊剂A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

5. 发明授权

US06363005B1 Method of increasing operating speed of SRAM 失效
标题翻译：提高SRAM工作速度的方法
公开(公告)号：US06363005B1
公开(公告)日：2002-03-26
申请号：US09801349
申请日：2001-03-07
申请人： Cheng-Lieh Wang , Cheng-Nan Lin
发明人： Cheng-Lieh Wang , Cheng-Nan Lin
IPC分类号： G11C1140
CPC分类号： G11C11/412
摘要： A method of increasing the operating speed of an SRAM device. The SRAM device is constructed from a plurality of loads and a plurality of NMOS transistors. A positive voltage is applied to the substrate of the NMOS transistors when data needs to be read from the SRAM device or written to the SRAM device. The positive voltage increases the channel width between the source and the drain terminal of the NMOS transistors so that a higher current is produced and operating speed of the device is increased. An earth voltage is applied to the substrate when the SRAM device is in a standby mode to prevent current leakage.
摘要翻译：一种提高SRAM器件工作速度的方法。 SRAM器件由多个负载和多个NMOS晶体管构成。当需要从SRAM器件读取数据或写入SRAM器件时，将正电压施加到NMOS晶体管的衬底。正电压增加了NMOS晶体管的源极和漏极端子之间的沟道宽度，使得产生更高的电流并且器件的操作速度增加。当SRAM器件处于待机模式时，将基极施加接地电压以防止电流泄漏。

6. 发明授权

US08486826B2 Process of forming a grid electrode on the front-side of a silicon wafer 有权
公开(公告)号：US08486826B2
公开(公告)日：2013-07-16
申请号：US12783761
申请日：2010-05-20
申请人： Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
发明人： Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
IPC分类号： H01L31/0392 , H01L21/283 , H01L29/40
CPC分类号： H01L31/022433 , C03C8/02 , C03C8/10 , C03C8/24 , H01B1/16 , H01L31/022425 , Y02E10/50
摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

7. 发明授权

US08372679B2 Process of forming a grid electrode on the front-side of a silicon wafer 失效
标题翻译：在硅晶片的正面形成栅电极的工艺
公开(公告)号：US08372679B2
公开(公告)日：2013-02-12
申请号：US12783832
申请日：2010-05-20
申请人： David Kent Anderson , Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
发明人： David Kent Anderson , Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , C03C8/02 , C03C8/10 , C03C8/24 , Y02E10/50
摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer wherein thin parallel fingers lines that form the front side grid electrode are double printed from a metal paste, and the metal pastes used for the first and second printing differ in their content of glass frit plus optionally present other inorganic additives.
摘要翻译：在具有ARC层的硅晶片上形成前栅格电极的工艺，其中形成前侧栅格电极的薄平行指线从金属膏双重印刷，并且用于第一和第二印刷的金属浆料不同其玻璃料的含量加上任选地存在其它无机添加剂。

8. 发明申请

US20080252627A1 DISPLAY ARRAY DRIVING CIRCUIT AND DRIVING METHOD THEREOF 审中-公开
标题翻译：显示阵列驱动电路及其驱动方法
公开(公告)号：US20080252627A1
公开(公告)日：2008-10-16
申请号：US12101222
申请日：2008-04-11
申请人： Yong-Nien Rao , Cheng-Nan Lin
发明人： Yong-Nien Rao , Cheng-Nan Lin
IPC分类号： G09G5/00
CPC分类号： G09G3/3685 , G09G2330/022
摘要： A display array driving circuit is provided. The circuit includes a first memory block, a second memory block, and a main circuit. The first memory block stores the most significant bit (MSB) of the data of one pixel. The second memory block is utilized to store non-MSB bits of the data of the pixel. The main circuit retrieves the MSB of the data of the pixel from the first memory block when the display array is in a predetermined mode, for displaying the pixel data on the display array. In the predetermined mode, the main circuit does not retrieve the non-MSB bits of the data of the pixel, and power consumption is subsequently reduced.
摘要翻译：提供了显示阵列驱动电路。电路包括第一存储器块，第二存储器块和主电路。第一个存储器块存储一个像素的数据的最高有效位（MSB）。第二存储器块用于存储像素的数据的非MSB位。当显示阵列处于预定模式时，主电路从第一存储器块检索像素的数据的MSB，以便在显示器阵列上显示像素数据。在预定模式下，主电路不检索像素的数据的非MSB位，随后降低功耗。

9. 发明授权

US07385311B2 Voltage controller implemented in a low operation voltage device 失效
标题翻译：电压控制器采用低工作电压装置
公开(公告)号：US07385311B2
公开(公告)日：2008-06-10
申请号：US11279558
申请日：2006-04-12
申请人： Cheng-Nan Lin
发明人： Cheng-Nan Lin
IPC分类号： H02J1/10
CPC分类号： G11C11/413 , G11C5/147 , Y10T307/391 , Y10T307/858
摘要： When a low operation voltage device is idle and a voltage of an external power supply is larger than a predetermined voltage, a transistor with a high threshold voltage is turned on to provide electric power to the low operation voltage device. When the low operation voltage device is operating and the voltage of the external power supply is not larger than the predetermined voltage, a transistor with a low threshold voltage is turned on to provide electric power to the low operation voltage device.
摘要翻译：当低操作电压装置怠速并且外部电源的电压大于预定电压时，开启具有高阈值电压的晶体管，以向低电压装置提供电力。当低操作电压装置工作并且外部电源的电压不大于预定电压时，导通低阈值电压的晶体管以向低电压装置提供电力。

10. 发明申请

US20100294361A1 PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 失效
标题翻译：在硅砂的正面形成网状电极的工艺
公开(公告)号：US20100294361A1
公开(公告)日：2010-11-25
申请号：US12783832
申请日：2010-05-20
申请人： David Kent Anderson , Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
发明人： David Kent Anderson , Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
IPC分类号： H01L31/0232 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/022425 , C03C8/02 , C03C8/10 , C03C8/24 , Y02E10/50
摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps:(1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines forming a top set of finger lines superimposing the bottom set of finger lines, (3) printing and drying a metal paste C comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit to form busbars intersecting the finger lines at right angle, and (4) firing the triple-printed silicon wafer, wherein the inorganic content of metal paste B as well as that of paste C contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.
摘要翻译：一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属膏A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥含有0至3重量％玻璃的无机物含量的金属浆料B （3）印刷和干燥包含0.2至3重量％玻璃料的无机物含量的金属浆料C以形成玻璃料，以形成最下面的一组指纹，母线与指纹线成直角相交，（4）烧制三印刷硅片，其中金属糊料B的无机物含量以及糊状物C的无机物含量比无机物含量少，玻璃料加上任选存在的其它无机添加剂的金属糊一个。

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