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2. 发明授权

US06440809B1 Method of preventing fluorine ions from residing in a gate to result in boron ion penetration into a gate oxide 失效
标题翻译：防止氟离子驻留在栅极中以导致硼离子渗透到栅极氧化物中的方法
公开(公告)号：US06440809B1
公开(公告)日：2002-08-27
申请号：US09803888
申请日：2001-03-13
申请人： Cheng-Lieh Wang
发明人： Cheng-Lieh Wang
IPC分类号： H01L21336
CPC分类号： H01L29/6659
摘要： The present invention provides a method of preventing fluorine ions from residing in a gate to result in boron ion penetration into a gate oxide on a semiconductor wafer. A substrate, an oxide layer, a conductive layer, an anti-reflection coating (ARC), and a photoresist layer positioned on the ARC defining patterns of a gate, are formed, respectively, on the semiconductor wafer. The method first involves an etching process to remove portions of both the ARC and the conductive layer uncovered by the photoresist layer to form the gate and a gate oxide layer. After the photoresist layer is stripped, an ion implantation process is performed using the gate covered by the ARC as hard mask and boron fluoride (BF2+) as the dopant to form lightly doped drains (LDD) in the substrate adjacent to the gate. Then, a spacer is formed around the gate after the ARC is removed. Finally, the method is completed with the formation of a source and a drain in the substrate adjacent to the spacer after the ARC is stripped.
摘要翻译：本发明提供一种防止氟离子驻留在栅极中以导致硼离子渗入半导体晶片上的栅极氧化物的方法。分别在半导体晶片上分别形成衬底，氧化物层，导电层，抗反射涂层（ARC）和位于ARC上限定栅极图案的光致抗蚀剂层。该方法首先涉及蚀刻工艺以去除由光致抗蚀剂层未覆盖的ARC和导电层的部分，以形成栅极和栅极氧化物层。在剥离光致抗蚀剂层之后，使用由ARC覆盖的栅极作为硬掩模和氟化硼（BF 2 +）作为掺杂剂进行离子注入工艺，以在与栅极相邻的衬底中形成轻掺杂的漏极（LDD）。然后，在去除ARC之后，在栅极周围形成间隔物。最后，在ARC被剥离之后，该方法完成在与衬垫相邻的衬底中形成源极和漏极。

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