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1. 发明授权

US06046061A Method of inspecting wafer water mark 失效
标题翻译：检查晶圆水印的方法
公开(公告)号：US06046061A
公开(公告)日：2000-04-04
申请号：US206177
申请日：1998-12-04
申请人： Li-Wu Tsao , Tse-Wei Liu , Cheng-Chieh Huang , Tang Yu , Eddie Chen
发明人： Li-Wu Tsao , Tse-Wei Liu , Cheng-Chieh Huang , Tang Yu , Eddie Chen
IPC分类号： G01Q60/00 , G01Q90/00 , G01R31/28 , H01L21/66 , H01L23/544 , G01R31/26
CPC分类号： H01L22/34 , H01L22/20 , G01R31/2831 , H01L22/12
摘要： A method of water mark inspection. By forming a pattern on a test wafer, the water mark formed thereon directly reflects the features of a wafer product to be evaluated. The water mark is formed by simulating fabrication process conditions of forming the wafer product of which the performance is to be evaluated. Thus, after scanning the water mark by a defect inspection machine, the performance of the wafer product is evaluated.
摘要翻译：水标检验方法。通过在测试晶片上形成图案，形成在其上的水印直接反映要评估的晶片产品的特征。通过模拟形成要评估性能的晶片产品的制造工艺条件来形成水印。因此，在通过缺陷检查机扫描水印之后，评估晶片产品的性能。

2. 发明授权

US06566282B2 Method of forming a silicon oxide layer 有权
公开(公告)号：US06566282B2
公开(公告)日：2003-05-20
申请号：US09885048
申请日：2001-06-21
申请人： Cheng-Chieh Huang , Tse-Wei Liu , Tang Yu
发明人： Cheng-Chieh Huang , Tse-Wei Liu , Tang Yu
IPC分类号： H01L21469
CPC分类号： H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/31662
摘要： A silicon oxide layer is formed on a semiconductor wafer by performing a high temperature oxidation (HTO) process using dichlorosilane (SiH2Cl2) and nitrous oxide (N2O), as reacting gases, having a flow rates with a ratio greater than 2:1, respectively. The reacting moles of dichlorosilane to nitrous oxide are in the proportion of 1:2.

3. 发明授权

US06383946B1 Method of increasing selectivity in silicon nitride deposition 有权
标题翻译：提高氮化硅沉积选择性的方法
公开(公告)号：US06383946B1
公开(公告)日：2002-05-07
申请号：US09740408
申请日：2000-12-18
申请人： Tzung-Hua Ying , Tang Yu , Tse-Wei Liu , Cheng-Chieh Huang
发明人： Tzung-Hua Ying , Tang Yu , Tse-Wei Liu , Cheng-Chieh Huang
IPC分类号： H01L21302
CPC分类号： C23C16/0218 , C23C16/345 , H01L21/02052 , H01L21/318
摘要： A method of increasing the selectivity of silicon nitride deposition. A substrate is provided. A silicon oxide layer is formed over a portion of the substrate. Ammonia NH3 is passed over the silicon oxide layer and the substrate surface for a definite period to perform a surface treatment. Silicon nitride is subsequently deposited over the substrate and the silicon oxide layer.
摘要翻译：提高氮化硅沉积选择性的方法。提供基板。在衬底的一部分上形成氧化硅层。氨NH 3通过氧化硅层和衬底表面一定时间以进行表面处理。氮化硅随后沉积在衬底和氧化硅层上。

4. 发明授权

US08104687B2 Card reading device for a vehicle 失效
标题翻译：车载卡读取装置
公开(公告)号：US08104687B2
公开(公告)日：2012-01-31
申请号：US12741122
申请日：2008-10-29
申请人： Hailong Hu , Lixin Xiao , Tang Yu
发明人： Hailong Hu , Lixin Xiao , Tang Yu
IPC分类号： G06K19/06
CPC分类号： G06K13/08 , G06K13/0806
摘要： A card reading device for vehicles having a base plate, a sliding plate part, and a spring part. The base plate has a vaulted groove, an opening surface located at one end, and an annular groove provided on the base surface of said vaulted groove. The sliding plate part is provided above the vaulted groove of the base plate, A bulging structure, contacts an inserted card and drives the sliding plate part in a direction vertical to the opening phase and facing away from the opening surface. A sliding part is provided on the side of the sliding plate part pointing toward the vaulted roof of the base plate. The sliding part slides in the direction parallel to the opening surface and is guided by the annular groove and restricted in the positioning thereof. The spring element and the base plate and the sliding plate part have contact with one another, and force is applied to the directed vertically to the opening surface. Fixing of the card and also easy removal are made possible.
摘要翻译：一种用于具有基板，滑板部分和弹簧部分的车辆的卡读取装置。基板具有拱形槽，位于一端的开口表面和设置在所述拱形槽的基面上的环形槽。滑动板部分设置在基板的拱形槽的上方，凸出结构与插入的卡接触，并且在垂直于开放相位的方向上驱动滑板部分并且背离开口表面。滑动部分设置在指向基板的拱顶的滑动板部分的侧面上。滑动部件在平行于开口表面的方向上滑动并被环形槽引导并限制其定位。弹簧元件和基板以及滑动板部彼此接触，并且向垂直于开口表面的方向施加力。卡的固定也易于拆卸成为可能。

5. 发明授权

US6099902A Method of determining a time to clean a low pressure chemical vapor deposition (LPCVD) system 失效
标题翻译：确定清洁低压化学气相沉积（LPCVD）系统的时间的方法
公开(公告)号：US6099902A
公开(公告)日：2000-08-08
申请号：US186530
申请日：1998-11-05
申请人： Jumn-Min Fam , Tang Yu , Eddie Chen
发明人： Jumn-Min Fam , Tang Yu , Eddie Chen
IPC分类号： C23C16/44 , C23C16/52 , C23C16/00
CPC分类号： C23C16/52 , C23C16/4401 , C23C16/4412
摘要： A method for accurately determining a time to clean a LPCVD system is disclosed, in which gas flow readings of the gas supplying source from a mass flow meter (MFM) are recorded during the depositing process. The gas flow volume of the gas supplying source read from the MFM decreases as the congestion in the vacuum route of the LPCVD system increases. Based on the established relationship, an accurate time for cleaning the LPCVD system can be determined, so as to avoid product defects due to an excessive deposition.
摘要翻译：公开了一种用于准确地确定清洁LPCVD系统的时间的方法，其中在沉积过程中记录来自质量流量计（MFM）的气体供应源的气体流量读数。随着LPCVD系统的真空路径中的拥塞增加，从MFM读取的供气源的气体流量减小。基于建立的关系，可以确定清洁LPCVD系统的准确时间，以避免由于过度沉积引起的产品缺陷。

6. 发明授权

US06245617B1 Method of fabricating dielectric layer 失效
标题翻译：介电层制作方法
公开(公告)号：US06245617B1
公开(公告)日：2001-06-12
申请号：US09306253
申请日：1999-05-06
申请人： Yi-Chang Yang , Tang Yu
发明人： Yi-Chang Yang , Tang Yu
IPC分类号： H01L21336
CPC分类号： H01L21/3145 , H01L21/3185 , H01L21/32105 , H01L27/1085 , Y10S438/954
摘要： A method of fabricating a dielectric layer is provided. A first oxide layer is formed on a polysilicon layer. A silicon-rich nitride layer is formed on a first oxide layer. A silicon-poor nitride layer is formed on the silicon-rich nitride layer. An oxidation step is performed on the silicon-poor nitride layer. A second oxide layer is formed on the silicon-poor nitride layer. The dielectric layer comprising a multiple nitride layer structure is formed.
摘要翻译：提供一种制造介电层的方法。第一氧化物层形成在多晶硅层上。在第一氧化物层上形成富含硅的氮化物层。在富硅氮化物层上形成不良氮化物层。对无硅氮化物层进行氧化步骤。在无硅氮化物层上形成第二氧化物层。形成包括多重氮化物层结构的电介质层。

7. 发明申请

US20100276494A1 Card Reading Device For A Vehicle 失效
标题翻译：车辆读卡器
公开(公告)号：US20100276494A1
公开(公告)日：2010-11-04
申请号：US12741122
申请日：2008-10-29
申请人： Tang Yu , Lixin Xiao , Hailong Hu
发明人： Tang Yu , Lixin Xiao , Hailong Hu
IPC分类号： G06K7/015
CPC分类号： G06K13/08 , G06K13/0806
摘要： A card reading device for vehicles having a base plate, a sliding plate part, and a spring part. The base plate has a vaulted groove, an opening surface located at one end, and an annular groove provided on the base surface of said vaulted groove, The sliding plate part is provided above the vaulted groove of the base plate, A bulging structure, contacts an inserted card and drives the sliding plate part in a direction vertical to the opening phase and facing away from the opening surface. A sliding part is provided on the side of the sliding plate part pointing toward the vaulted roof of the base plate. The sliding part slides in the direction parallel to the opening surface and is guided by the annular groove and restricted in the positioning thereof. The spring element and the base plate and the sliding plate part have contact with one another, and force is applied to the directed vertically to the opening surface. Fixing of the card and also easy removal are made possible.
摘要翻译：一种用于具有基板，滑板部分和弹簧部分的车辆的卡读取装置。基板具有拱形槽，位于一端的开口表面和设置在所述拱形槽的基面上的环形槽。滑板部设置在基板的拱形槽的上方，凸出结构，触点插入卡片，并且沿垂直于开放相位的方向驱动滑动板部件并且背离开口表面。滑动部分设置在指向基板的拱顶的滑动板部分的侧面上。滑动部件在平行于开口表面的方向上滑动并被环形槽引导并限制其定位。弹簧元件和基板以及滑动板部彼此接触，并且向垂直于开口表面的方向施加力。卡的固定也易于拆卸成为可能。

8. 发明授权

US6136613A Method for recycling monitoring control wafers 失效
标题翻译：回收监控控制晶片的方法
公开(公告)号：US6136613A
公开(公告)日：2000-10-24
申请号：US82659
申请日：1998-05-21
申请人： Jen-Tsung Lin , Tsung-Hsien Han , Tang Yu
发明人： Jen-Tsung Lin , Tsung-Hsien Han , Tang Yu
IPC分类号： H01L23/544 , H01J37/317
CPC分类号： H01L22/34 , H01J2237/31701 , Y10S134/902
摘要： A method for recycling monitoring control wafers includes cleaning the wafers after performing a sheet resistance (Rs) measurement on a bare silicon monitoring control wafer of an ion implanter, and then converting the wafer into a recyclable control wafer. A recyclable control wafer for a thermal wave (TW) measurement of destruction can be obtained by forming a screen layer on the wafer, performing a TW measurement, performing ion implantation by the monitoring recipe, performing TW measurement again, performing ion drive-in to drive implanted ions into the deeper areas of the substrate, removing the screen layer, and then forming another screen layer on the wafer to put the wafer into the recycling process of a TW measurement.
摘要翻译：回收监控控制晶片的方法包括在离子注入机的裸硅监控控制晶片上执行薄层电阻（Rs）测量之后清洗晶片，然后将晶片转换成可回收的控制晶片。可以通过在晶片上形成屏幕层，执行TW测量，通过监视配方执行离子注入，再次执行TW测量，执行离子驱入，获得用于热波（TW）破坏测量的可回收控制晶片将注入的离子驱动到衬底的较深区域，去除屏幕层，然后在晶片上形成另一个屏幕层，以将晶片放入TW测量的再循环过程中。

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