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1. 发明授权

US08779445B2 Stress-alleviation layer for LED structures 有权
标题翻译： LED结构应力消除层
公开(公告)号：US08779445B2
公开(公告)日：2014-07-15
申请号：US12179160
申请日：2008-07-24
申请人： Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
IPC分类号： H01L29/18
CPC分类号： H01L33/44 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12
摘要： A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.
摘要翻译：提供了发光二极管（LED）。 LED在衬底上包括应力消除层。在基板上形成开放区域和应力缓和层区域。外延层至少在其中的开放区域中设置在基板上，从而形成LED结构。通过应力缓解区域的至少第一部分切割衬底，从而形成多个LED。

2. 发明授权

US08519414B2 III-nitride based semiconductor structure with multiple conductive tunneling layer 有权
标题翻译：具有多个导电隧穿层的III族氮化物基半导体结构
公开(公告)号：US08519414B2
公开(公告)日：2013-08-27
申请号：US13237181
申请日：2011-09-20
申请人： Chia-Lin Yu , Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
发明人： Chia-Lin Yu , Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L27/15
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.
摘要翻译：半导体结构包括衬底和与衬底接触的导电载体隧穿层。导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。半导体结构还包括在导电载体 - 隧穿层上的有源层。

3. 发明授权

US08486807B2 Realizing N-face III-nitride semiconductors by nitridation treatment 有权
标题翻译：通过氮化处理实现N面III族氮化物半导体
公开(公告)号：US08486807B2
公开(公告)日：2013-07-16
申请号：US12972184
申请日：2010-12-17
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02617 , H01L21/02664
摘要： A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.
摘要翻译：形成半导体结构的方法包括提供基板; 在衬底上形成缓冲/成核层; 在缓冲/成核层上形成III族氮化物（III族氮化物）层; 并对该III族氮化物层进行氮化。形成III族氮化物层的步骤包括金属有机化学气相沉积。

4. 发明授权

US08415691B2 Omnidirectional reflector 有权
公开(公告)号：US08415691B2
公开(公告)日：2013-04-09
申请号：US12202167
申请日：2008-08-29
申请人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/10 , H01L33/46 , H01L2933/0083
摘要： A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

5. 发明授权

US08399273B2 Light-emitting diode with current-spreading region 有权
标题翻译：具有电流扩展区域的发光二极管
公开(公告)号：US08399273B2
公开(公告)日：2013-03-19
申请号：US12539757
申请日：2009-08-12
申请人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L33/0066 , H01L33/04 , H01L33/06 , H01L33/30 , H01L33/36 , H01L33/62 , H01L2933/0066
摘要： A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.
摘要翻译：提供了一种发光二极管（LED）装置。 LED装置具有较低的LED层和位于其间的发光层的上部LED层。在上LED层中形成电流阻挡层，使得在与上层LED层接触的电极之间的电流流过电流阻挡层。当电流阻挡层位于电极和发光层之间时，由发光层发射的光不被电极阻挡，并且光效率增加。可以通过将上部LED层的一部分转换成电阻区域来形成电流阻挡层。在一个实施方案中，诸如镁，碳或硅的离子注入上层LED层以形成电流阻挡层。

6. 发明授权

US08236583B2 Method of separating light-emitting diode from a growth substrate 有权
标题翻译：从生长衬底分离发光二极管的方法
公开(公告)号：US08236583B2
公开(公告)日：2012-08-07
申请号：US12554578
申请日：2009-09-04
申请人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , C23C14/048 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L25/167 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
摘要翻译：提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。该方法包括在生长衬底上形成和图案化掩模层。在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。第一接触层可以是LED结构的接触层。在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

7. 发明授权

US08154038B2 Group-III nitride for reducing stress caused by metal nitride reflector 有权
标题翻译： III族氮化物，用于减少由金属氮化物反射体引起的应力
公开(公告)号：US08154038B2
公开(公告)日：2012-04-10
申请号：US12166020
申请日：2008-07-01
申请人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
发明人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/32
摘要： A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light emitted by the light-emitting layer.
摘要翻译：一种器件结构包括：衬底; 在衬底上的III族氮化物层; III族氮化物层上的金属氮化物层; 以及金属氮化物层上方的发光层。金属氮化物层用作反射由发光层发射的光的反射器。

8. 发明授权

US08110890B2 Method of fabricating semiconductor device isolation structure 有权
标题翻译：制造半导体器件隔离结构的方法
公开(公告)号：US08110890B2
公开(公告)日：2012-02-07
申请号：US11758043
申请日：2007-06-05
申请人： Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
发明人： Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
IPC分类号： H01L21/70
CPC分类号： H01L21/76202 , H01L21/26506 , H01L21/26533 , H01L21/26586 , H01L21/266 , H01L21/324 , H01L21/762 , H01L21/823481 , H01L29/0649 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.
摘要翻译：包括可折入隔离结构的半导体器件和用于制造这种器件的方法。优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

9. 发明申请

US20120007048A1 III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer 有权
标题翻译：基于III型氮化物的多导体隧穿层半导体结构
公开(公告)号：US20120007048A1
公开(公告)日：2012-01-12
申请号：US13237181
申请日：2011-09-20
申请人： Chia-Lin Yu , Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
发明人： Chia-Lin Yu , Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.
摘要翻译：半导体结构包括衬底和与衬底接触的导电载体隧穿层。导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。半导体结构还包括在导电载体 - 隧穿层上的有源层。

10. 发明申请

US20100062551A1 Method of Separating Light-Emitting Diode from a Growth Substrate 有权
标题翻译：将发光二极管与生长衬底分离的方法
公开(公告)号：US20100062551A1
公开(公告)日：2010-03-11
申请号：US12554578
申请日：2009-09-04
申请人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L27/15
CPC分类号： H01L33/007 , C23C14/048 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L25/167 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
摘要翻译：提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。该方法包括在生长衬底上形成和图案化掩模层。在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。第一接触层可以是LED结构的接触层。在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

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