专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08803189B2 III-V compound semiconductor epitaxy using lateral overgrowth 有权
标题翻译： III-V化合物半导体外延使用横向过度生长
公开(公告)号：US08803189B2
公开(公告)日：2014-08-12
申请号：US12538701
申请日：2009-08-10
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
IPC分类号： H01L33/00
CPC分类号： H01L21/8258 , H01L21/0237 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02642 , H01L21/02645 , H01L29/2003 , H01L29/66462 , H01L33/007
摘要： A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer/nucleation layer.
摘要翻译：电路结构包括基板; 在所述衬底上的图案化掩模层，其中所述图案化掩模层包括多个间隙; 和III族V族（III-V）族化合物半导体层。 III-V族化合物半导体层包括掩模层上的第一部分和间隙中的第二部分，其中III-V族化合物半导体层覆盖缓冲层/成核层。

2. 发明申请

US20100044719A1 III-V Compound Semiconductor Epitaxy Using Lateral Overgrowth 有权
标题翻译： III-V化合物半导体外延使用横向过度生长
公开(公告)号：US20100044719A1
公开(公告)日：2010-02-25
申请号：US12538701
申请日：2009-08-10
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
IPC分类号： H01L29/20
CPC分类号： H01L21/8258 , H01L21/0237 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02642 , H01L21/02645 , H01L29/2003 , H01L29/66462 , H01L33/007
摘要： A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer/nucleation layer.
摘要翻译：电路结构包括基板; 在所述衬底上的图案化掩模层，其中所述图案化掩模层包括多个间隙; 和III族V族（III-V）族化合物半导体层。 III-V族化合物半导体层包括掩模层上的第一部分和间隙中的第二部分，其中III-V族化合物半导体层覆盖缓冲层/成核层。

3. 发明申请

US20100038655A1 Reflective Layer for Light-Emitting Diodes 有权
标题翻译：发光二极管反射层
公开(公告)号：US20100038655A1
公开(公告)日：2010-02-18
申请号：US12270309
申请日：2008-11-13
申请人： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
摘要： A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
摘要翻译：描述了用于制造发光装置的系统和方法。优选实施例包括形成在基板上的多个LED。每个LED优选地具有沿LED的侧壁的间隔物，并且在LED之间的基板上形成反射表面。反射表面优选地位于比各个LED的有源层更低的位置。

4. 发明申请

US20100032700A1 Light-Emitting Diodes on Concave Texture Substrate 有权
标题翻译：凹面纹理基板上的发光二极管
公开(公告)号：US20100032700A1
公开(公告)日：2010-02-11
申请号：US12247895
申请日：2008-10-08
申请人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/48 , H01L33/20 , H01L33/24
摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
摘要翻译：提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。对衬底进行图案化和蚀刻以形成凹陷。沿着凹部的底部形成分离层。沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。在这些实施例中，与平面表面相比，LED结构的表面积增加。在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。在这些实施例中，硅衬底中的凹陷导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

5. 发明申请

US20100001257A1 Stress-Alleviation Layer for LED Structures 有权
标题翻译： LED结构应力消除层
公开(公告)号：US20100001257A1
公开(公告)日：2010-01-07
申请号：US12179160
申请日：2008-07-24
申请人： Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Ding-Yuan Chen , Wen-Chih Chiou , Chia-Lin Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12
摘要： A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.
摘要翻译：提供了发光二极管（LED）。 LED在衬底上包括应力消除层。在基板上形成开放区域和应力缓和层区域。外延层至少在其中的开放区域中设置在基板上，从而形成LED结构。通过应力缓解区域的至少第一部分切割衬底，从而形成多个LED。

6. 发明授权

US08377796B2 III-V compound semiconductor epitaxy from a non-III-V substrate 有权
标题翻译： III-V族化合物半导体外延从非III-V衬底
公开(公告)号：US08377796B2
公开(公告)日：2013-02-19
申请号：US12539374
申请日：2009-08-11
申请人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L21/02365 , H01L21/02104 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02538 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L29/12
摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.
摘要翻译：形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。

7. 发明授权

US08148732B2 Carbon-containing semiconductor substrate 有权
标题翻译：含碳半导体衬底
公开(公告)号：US08148732B2
公开(公告)日：2012-04-03
申请号：US12509339
申请日：2009-07-24
申请人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
发明人： Chen-Hua Yu , Chia-Lin Yu , Ding-Yuan Chen , Wen-Chih Chiou , Hung-Ta Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02491 , H01L21/02505 , H01L21/0254 , H01L21/223 , H01L21/26506 , H01L33/025
摘要： A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed.
摘要翻译：提供了一种发光二极管（LED）装置。 LED装置形成在具有含碳层的基板上。将碳原子引入衬底中以防止或减少来自上层金属/金属合金过渡层的原子与衬底的原子的混合。以这种方式，保持可以形成LED结构的晶体结构。

8. 发明授权

US08134163B2 Light-emitting diodes on concave texture substrate 有权
标题翻译：凹面纹理基板上的发光二极管
公开(公告)号：US08134163B2
公开(公告)日：2012-03-13
申请号：US12247895
申请日：2008-10-08
申请人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
IPC分类号： H01L33/08
CPC分类号： H01L33/48 , H01L33/20 , H01L33/24
摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
摘要翻译：提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。对衬底进行图案化和蚀刻以形成凹陷。沿着凹部的底部形成分离层。沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。在这些实施例中，与平面表面相比，LED结构的表面积增加。在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。在这些实施例中，硅衬底中的凹陷导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

9. 发明申请

US20100068866A1 III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate 有权
标题翻译： III-V族化合物半导体外延从非III-V基片
公开(公告)号：US20100068866A1
公开(公告)日：2010-03-18
申请号：US12539374
申请日：2009-08-11
申请人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chia-Lin Yu , Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L21/02365 , H01L21/02104 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02538 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L29/12
摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.
摘要翻译：形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。

10. 发明授权

US08629465B2 Light-emitting diodes on concave texture substrate 有权
标题翻译：凹面纹理基板上的发光二极管
公开(公告)号：US08629465B2
公开(公告)日：2014-01-14
申请号：US13358327
申请日：2012-01-25
申请人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
发明人： Chen-Hua Yu , Hung-Ta Lin , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu
IPC分类号： H01L33/08
CPC分类号： H01L33/48 , H01L33/20 , H01L33/24
摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
摘要翻译：提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。对衬底进行图案化和蚀刻以形成凹陷。沿着凹部的底部形成分离层。沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。在这些实施例中，与平面表面相比，LED结构的表面积增加。在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。在这些实施例中，硅衬底中的凹槽导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式