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1. 发明授权

US11038056B2 System and method for source/drain contact processing 有权
公开(公告)号：US11038056B2
公开(公告)日：2021-06-15
申请号：US13371169
申请日：2012-02-10
申请人： Chen-Hua Yu , Cheng-Hung Chang , Chen-Nan Yeh , Yu-Rung Hsu
发明人： Chen-Hua Yu , Cheng-Hung Chang , Chen-Nan Yeh , Yu-Rung Hsu
IPC分类号： H01L29/76 , H01L29/78 , H01L29/417 , H01L29/66 , H01L29/20
摘要： System and method for reducing contact resistance and prevent variations due to misalignment of contacts is disclosed. A preferred embodiment comprises a non-planar transistor with source/drain regions located within a fin. An inter-layer dielectric overlies the non-planar transistor, and contacts are formed to the source/drain region through the inter-layer dielectric. The contacts preferably come into contact with multiple surfaces of the fin so as to increase the contact area between the contacts and the fin.

2. 发明授权

US08946828B2 Semiconductor device having elevated structure and method of manufacturing the same 有权
标题翻译：具有升高的结构的半导体器件及其制造方法
公开(公告)号：US08946828B2
公开(公告)日：2015-02-03
申请号：US12702683
申请日：2010-02-09
申请人： Sey-Ping Sun , Tsung-Lin Lee , Chin-Hsiang Lin , Chih-Hao Chang , Chen-Nan Yeh , Chao-An Jong
发明人： Sey-Ping Sun , Tsung-Lin Lee , Chin-Hsiang Lin , Chih-Hao Chang , Chen-Nan Yeh , Chao-An Jong
IPC分类号： H01L29/78 , H01L21/768 , H01L29/66
CPC分类号： H01L29/4232 , H01L21/76834 , H01L21/76849 , H01L21/76897 , H01L29/495 , H01L29/4966 , H01L29/66545 , H01L29/78
摘要： A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.
摘要翻译：半导体器件包括半导体衬底; 覆盖衬底的栅极堆叠，形成在栅极堆叠的侧壁上的间隔物，以及覆盖栅极堆叠的保护层，用于填充由间隔物和栅极堆叠的顶表面围绕的空间的至少一部分。间隔件的顶表面高于栅极堆叠的顶表面。

3. 发明授权

US08110890B2 Method of fabricating semiconductor device isolation structure 有权
标题翻译：制造半导体器件隔离结构的方法
公开(公告)号：US08110890B2
公开(公告)日：2012-02-07
申请号：US11758043
申请日：2007-06-05
申请人： Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
发明人： Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
IPC分类号： H01L21/70
CPC分类号： H01L21/76202 , H01L21/26506 , H01L21/26533 , H01L21/26586 , H01L21/266 , H01L21/324 , H01L21/762 , H01L21/823481 , H01L29/0649 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.
摘要翻译：包括可折入隔离结构的半导体器件和用于制造这种器件的方法。优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

4. 发明申请

US20120025313A1 Germanium FinFETs Having Dielectric Punch-Through Stoppers 有权
标题翻译：具有介质穿孔塞的锗FinFET
公开(公告)号：US20120025313A1
公开(公告)日：2012-02-02
申请号：US13272994
申请日：2011-10-13
申请人： Cheng-Hung Chang , Yu-Rung Hsu , Chen-Yi Lee , Shih-Ting Hung , Chen-Nan Yeh , Chen-Hua Yu
发明人： Cheng-Hung Chang , Yu-Rung Hsu , Chen-Yi Lee , Shih-Ting Hung , Chen-Nan Yeh , Chen-Hua Yu
IPC分类号： H01L27/12 , H01L29/02
CPC分类号： H01L29/66795 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02617 , H01L29/1054 , H01L29/7851
摘要： A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fin. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.
摘要翻译：形成半导体结构的方法包括提供复合衬底，该复合衬底包括在本体硅衬底上并邻接体硅衬底的体硅衬底和硅锗（SiGe）层。对SiGe层进行第一次冷凝以形成冷凝的SiGe层，使得冷凝的SiGe层具有基本均匀的锗浓度。蚀刻冷凝的SiGe层和体硅衬底的顶部以在硅片上形成包括硅翅片和冷凝的SiGe鳍的复合翅片。该方法还包括氧化硅片的一部分; 并对冷凝的SiGe翅片进行第二冷凝。

5. 发明授权

US08048723B2 Germanium FinFETs having dielectric punch-through stoppers 有权
标题翻译：锗FinFET具有绝缘穿孔塞
公开(公告)号：US08048723B2
公开(公告)日：2011-11-01
申请号：US12329279
申请日：2008-12-05
申请人： Cheng-Hung Chang , Yu-Rung Hsu , Chen-Yi Lee , Shih-Ting Hung , Chen-Nan Yeh , Chen-Hua Yu
发明人： Cheng-Hung Chang , Yu-Rung Hsu , Chen-Yi Lee , Shih-Ting Hung , Chen-Nan Yeh , Chen-Hua Yu
IPC分类号： H01L21/332
CPC分类号： H01L29/66795 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02617 , H01L29/1054 , H01L29/7851
摘要： A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fine. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.
摘要翻译：形成半导体结构的方法包括提供复合衬底，该复合衬底包括在本体硅衬底上并邻接体硅衬底的体硅衬底和硅锗（SiGe）层。对SiGe层进行第一次冷凝以形成冷凝的SiGe层，使得冷凝的SiGe层具有基本均匀的锗浓度。蚀刻冷凝的SiGe层和体硅衬底的顶部以形成包括硅片和在硅微细上的冷凝的SiGe鳍的复合翅片。该方法还包括氧化硅片的一部分; 并对冷凝的SiGe翅片进行第二冷凝。

6. 发明申请

US20110193144A1 SEMICONDUCTOR DEVICE HAVING ELEVATED STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有高度结构的半导体器件及其制造方法
公开(公告)号：US20110193144A1
公开(公告)日：2011-08-11
申请号：US12702683
申请日：2010-02-09
申请人： Sey-Ping Sun , Tsung-Lin Lee , Chin-Hsiang Lin , Chih-Hao Chang , Chen-Nan Yeh , Chao-An Jong
发明人： Sey-Ping Sun , Tsung-Lin Lee , Chin-Hsiang Lin , Chih-Hao Chang , Chen-Nan Yeh , Chao-An Jong
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/4232 , H01L21/76834 , H01L21/76849 , H01L21/76897 , H01L29/495 , H01L29/4966 , H01L29/66545 , H01L29/78
摘要： A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.
摘要翻译：半导体器件包括半导体衬底; 覆盖衬底的栅极堆叠，形成在栅极堆叠的侧壁上的间隔物，以及覆盖栅极堆叠的保护层，用于填充由间隔物和栅极堆叠的顶表面围绕的空间的至少一部分。间隔件的顶表面高于栅极堆叠的顶表面。

7. 发明申请

US20110037129A1 Semiconductor Device Having Multiple Fin Heights 有权
标题翻译：具有多个翅片高度的半导体器件
公开(公告)号：US20110037129A1
公开(公告)日：2011-02-17
申请号：US12912522
申请日：2010-10-26
申请人： Chen-Hua Yu , Chen-Nan Yeh , Yu-Rung Hsu
发明人： Chen-Hua Yu , Chen-Nan Yeh , Yu-Rung Hsu
IPC分类号： H01L29/78
CPC分类号： H01L29/7851 , H01L29/66795
摘要： A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to form a pattern of trenches in a photoresist material. Subsequent etching steps form corresponding trenches in the underlying substrate. In yet another embodiment, multiple masking layers are used to etch trenches of different heights separately. A dielectric region may be formed along the bottom of the trenches to isolate the fins by performing an ion implant and a subsequent anneal.
摘要翻译：提供具有多个翅片高度的半导体器件。通过使用多个掩模来在形成在衬底中的沟槽内凹入电介质层来提供多个翅片高度。在另一个实施例中，使用植入模具或电子束光刻来形成光致抗蚀剂材料中的沟槽图案。随后的蚀刻步骤在下面的衬底中形成对应的沟槽。在另一个实施例中，使用多个掩模层来分别蚀刻不同高度的沟槽。可以沿着沟槽的底部形成电介质区域，以通过执行离子注入和随后的退火来隔离散热片。

8. 发明申请

US20090278196A1 FinFETs having dielectric punch-through stoppers 有权
标题翻译： FinFET具有绝缘穿孔塞
公开(公告)号：US20090278196A1
公开(公告)日：2009-11-12
申请号：US12116074
申请日：2008-05-06
申请人： Cheng-Hung Chang , Chen-Hua Yu , Chen-Nan Yeh
发明人： Cheng-Hung Chang , Chen-Hua Yu , Chen-Nan Yeh
IPC分类号： H01L29/00 , H01L21/76
CPC分类号： H01L29/1083 , H01L21/823412 , H01L21/823431 , H01L21/823481 , H01L27/088 , H01L27/1203 , H01L27/1207 , H01L29/0653 , H01L29/7843 , H01L29/7851
摘要： A semiconductor structure includes a semiconductor substrate; a planar transistor on a first portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate has a first top surface; and a multiple-gate transistor on a second portion of the semiconductor substrate. The second portion of the semiconductor substrate is recessed from the first top surface to form a fin of the multiple-gate transistor. The fin is electrically isolated from the semiconductor substrate by an insulator.
摘要翻译：半导体结构包括半导体衬底; 在所述半导体衬底的第一部分上的平面晶体管，其中所述半导体衬底的所述第一部分具有第一顶表面; 以及在半导体衬底的第二部分上的多栅极晶体管。半导体衬底的第二部分从第一顶表面凹入以形成多栅晶体管的鳍。翅片通过绝缘体与半导体衬底电隔离。

9. 发明申请

US20090253266A1 Semiconductor Device Having Multiple Fin Heights 有权
标题翻译：具有多个翅片高度的半导体器件
公开(公告)号：US20090253266A1
公开(公告)日：2009-10-08
申请号：US12484911
申请日：2009-06-15
申请人： Chen-Hua Yu , Chen-Nan Yeh , Yu-Rung Hsu
发明人： Chen-Hua Yu , Chen-Nan Yeh , Yu-Rung Hsu
IPC分类号： H01L21/302
CPC分类号： H01L29/7851 , H01L29/66795
摘要： A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to form a pattern of trenches in a photoresist material. Subsequent etching steps form corresponding trenches in the underlying substrate. In yet another embodiment, multiple masking layers are used to etch trenches of different heights separately. A dielectric region may be formed along the bottom of the trenches to isolate the fins by performing an ion implant and a subsequent anneal.
摘要翻译：提供具有多个翅片高度的半导体器件。通过使用多个掩模来在形成在衬底中的沟槽内凹入电介质层来提供多个翅片高度。在另一个实施例中，使用植入模具或电子束光刻来形成光致抗蚀剂材料中的沟槽图案。随后的蚀刻步骤在下面的衬底中形成对应的沟槽。在另一个实施例中，使用多个掩模层来分别蚀刻不同高度的沟槽。可以沿着沟槽的底部形成电介质区域，以通过执行离子注入和随后的退火来隔离散热片。

10. 发明申请

US20090250769A1 Semiconductor Device Having Multiple Fin Heights 有权
公开(公告)号：US20090250769A1
公开(公告)日：2009-10-08
申请号：US12484900
申请日：2009-06-15
申请人： Chen-Hua Yu , Chen-Nan Yeh , Yu-Rung Hsu
发明人： Chen-Hua Yu , Chen-Nan Yeh , Yu-Rung Hsu
IPC分类号： H01L29/78 , H01L27/088
CPC分类号： H01L29/7851 , H01L29/66795
摘要： A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to form a pattern of trenches in a photoresist material. Subsequent etching steps form corresponding trenches in the underlying substrate. In yet another embodiment, multiple masking layers are used to etch trenches of different heights separately. A dielectric region may be formed along the bottom of the trenches to isolate the fins by performing an ion implant and a subsequent anneal.

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