专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06821717B2 Process to form narrow write track for magnetic recording 失效
标题翻译：形成用于磁记录的窄写轨的过程
公开(公告)号：US06821717B2
公开(公告)日：2004-11-23
申请号：US10210955
申请日：2002-08-02
申请人： Charles C. Lin , Kochan Ju , Jeiwei Chang
发明人： Charles C. Lin , Kochan Ju , Jeiwei Chang
IPC分类号： G11B531
CPC分类号： C25D5/022 , Y10T29/49032
摘要： As the recording density of magnetic disk drives approaches 100 Gbits/in2, write track lengths of about 0.10 microns will be required. This cannot be accomplished using conventional photolithography. The present invention solves this problem by first forming on the bottom pole of the write head a cavity in a layer of photoresist, using conventional means. A seed layer of non-magnetic material is electrolessly laid down, following which a second layer of photoresist is deposited and patterned to form a second cavity that symmetrically surrounds the first one, thereby forming a mold around it. Ferromagnetic metal is then electro-deposited in this mold to form the top magnetic pole. Following the removal of all photoresist and a brief selective etch of the bottom pole, an extremely narrow write head is obtained.
摘要翻译：由于磁盘驱动器的记录密度接近100G比特/英寸，所以需要大约0.10微米的写入磁道长度。这不能用常规的光刻法来实现。本发明通过使用常规方法首先在写入头的底极上形成光致抗蚀剂层中的空腔来解决这个问题。非磁性材料的籽晶层被无电镀敷，随后沉积第二层光致抗蚀剂并图案化以形成对称地围绕第一腔的第二腔，从而在其周围形成模具。然后将铁磁金属电沉积在该模具中以形成顶部磁极。除去所有光致抗蚀剂和对底极进行短暂的选择性蚀刻之后，获得极窄的写入头。

2. 发明授权

US07279269B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07279269B2
公开(公告)日：2007-10-09
申请号：US10734422
申请日：2003-12-12
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

3. 发明授权

US07016168B2 Method of increasing CPP GMR in a spin valve structure 有权
标题翻译：在自旋阀结构中增加CPP GMR的方法
公开(公告)号：US07016168B2
公开(公告)日：2006-03-21
申请号：US10718373
申请日：2003-11-20
申请人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
发明人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.
摘要翻译：提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层，在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其种子层。

4. 发明授权

US07420780B2 Thin laminated single pole perpendicular write head 失效
标题翻译：薄层叠单极垂直写头
公开(公告)号：US07420780B2
公开(公告)日：2008-09-02
申请号：US11435053
申请日：2006-05-16
申请人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
发明人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/187 , G11B5/245 , G11B5/3156 , G11B5/465 , Y10T29/49032 , Y10T29/49043
摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.
摘要翻译：单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。中间层的厚度必须仔细控制。

5. 发明申请

US20080050615A1 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US20080050615A1
公开(公告)日：2008-02-28
申请号：US11901584
申请日：2007-09-18
申请人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

6. 发明申请

US20050111148A1 Method of increasing CPP GMR in a spin valve structure 有权
标题翻译：在自旋阀结构中增加CPP GMR的方法
公开(公告)号：US20050111148A1
公开(公告)日：2005-05-26
申请号：US10718373
申请日：2003-11-20
申请人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
发明人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
IPC分类号： G01R33/09 , G11B5/127 , G11B5/17 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.
摘要翻译：提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层，在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其种子层。

7. 发明授权

US07864490B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07864490B2
公开(公告)日：2011-01-04
申请号：US11901584
申请日：2007-09-18
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

8. 发明申请

US20060203382A1 Thin laminated single pole perpendicular write head 失效
标题翻译：薄层叠单极垂直写头
公开(公告)号：US20060203382A1
公开(公告)日：2006-09-14
申请号：US11435053
申请日：2006-05-16
申请人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
发明人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/187 , G11B5/245 , G11B5/3156 , G11B5/465 , Y10T29/49032 , Y10T29/49043
摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.
摘要翻译：单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。中间层的厚度必须仔细控制。

9. 发明授权

US07064924B2 Thin laminated single pole perpendicular write head 失效
公开(公告)号：US07064924B2
公开(公告)日：2006-06-20
申请号：US10610036
申请日：2003-06-30
申请人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
发明人： Kochan Ju , Lijie Guan , Jeiwei Chang , Min Li , Ben Hu
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/187 , G11B5/245 , G11B5/3156 , G11B5/465 , Y10T29/49032 , Y10T29/49043
摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

10. 发明申请

US20050130070A1 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US20050130070A1
公开(公告)日：2005-06-16
申请号：US10734422
申请日：2003-12-12
申请人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G03F7/00 , G11B5/31 , G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式