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    • 3. 发明申请
    • Thin-film transistor and diode array for an imager panel or the like
    • 用于成像器面板的薄膜晶体管和二极管阵列等
    • US20070122948A1
    • 2007-05-31
    • US11291602
    • 2005-11-30
    • Ching-Yeu WeiDouglas AlbagliWilliam Hennessy
    • Ching-Yeu WeiDouglas AlbagliWilliam Hennessy
    • H01L33/00H01L21/84
    • H01L27/1214H01L27/14663H01L31/115
    • Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.
    • 简而言之,根据一个或多个实施例,可以从与薄膜晶体管阵列集成的光电二极管阵列产生成像系统的检测器面板。 薄膜晶体管阵列可以具有形成的一个或多个通孔,用于增加光电二极管阵列与薄膜晶体管阵列的粘附。 通孔可以包括具有阶梯结构的侧壁。 薄膜晶体管阵列可以包括第一金属化层和第二金属化层。 第三金属化层可以添加到薄膜晶体管阵列中,其中光电二极管阵列的二极管可以接触第三金属化层。 光电二极管阵列的二极管可以经由第三金属化层与第一金属化层和/或第二金属化层接触而不直接接触第一金属化层或第二金属化层。
    • 5. 发明申请
    • Thin film transistor for imaging system
    • 用于成像系统的薄膜晶体管
    • US20060131669A1
    • 2006-06-22
    • US11021526
    • 2004-12-22
    • Douglas AlbagliWilliam HennessyAaron CoutureChristopher Collazo-Davila
    • Douglas AlbagliWilliam HennessyAaron CoutureChristopher Collazo-Davila
    • H01L31/062
    • H01L29/41733H01L27/12H01L27/14658H01L29/78618
    • An annular thin film transistor includes an annular source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of the semiconductor material within the annular source electrode, and an active channel between the drain electrode and the annular source electrode, wherein a surface of the active channel comprises exposed semiconductor material. Further, a serpentine thin film transistor includes a serpentine source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of semiconductor material and substantially within a recess formed by the serpentine source electrode, wherein the drain electrode is configured to substantially conform to the recess, and an active channel between the drain electrode and the serpentine source electrode, wherein the active channel has a substantially consistent length, and wherein a surface of the active channel comprises exposed semiconductor material.
    • 环形薄膜晶体管包括设置在半导体材料层之上的环形源电极,设置在环形源极内的半导体材料层之上的漏电极以及漏电极和环形源电极之间的有源沟道, 其中所述有源沟道的表面包括暴露的半导体材料。 此外,蛇形薄膜晶体管包括设置在半导体材料层上方的蛇形源极电极,设置在半导体材料层上方并且基本上在由蛇形源极电极形成的凹部内的漏电极,其中漏电极被配置为 基本上符合凹部,以及在漏电极和蛇形源电极之间的有源沟道,其中有源沟道具有基本一致的长度,并且其中有源沟道的表面包括暴露的半导体材料。
    • 10. 发明申请
    • Solid-state radiation imager with back-side irradiation
    • 固体辐射成像仪具有背面照射
    • US20050072931A1
    • 2005-04-07
    • US10681767
    • 2003-10-06
    • Douglas AlbagliJoseph ShiangGeorge PossinWilliam Hennessy
    • Douglas AlbagliJoseph ShiangGeorge PossinWilliam Hennessy
    • G01T1/20G01T1/24H01L27/14H01L27/146H01L31/09H01L31/115H04N5/32
    • G01T1/2018
    • A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements. This enables the imager to perform for a longer period of time according to its specifications.
    • 具有背面照射的固态成像仪。 本发明提供了一种固态成像器,其包括适于接收入射辐射的基本上辐射透明的衬底。 辐射通过基片和像素化的感光元件阵列到闪烁体材料,其吸收辐射。 感光元件的像素化阵列接收光子,并测量与闪烁体材料的辐射相互作用产生的光量。 有了这个成像器,传播和模糊就越少,从而形象越好。 在另一个实施例中,存在设置在像素化的感光元件阵列和闪烁体材料之间的基本上透明的材料。 基本上透明的材料吸收并基本上阻挡电子进入感光元件的像素化阵列的有源区域。 这使得成像器能够根据其规格执行更长的时间。