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1. 发明授权

US5978138A Projection exposure systems 失效
标题翻译：投影曝光系统
公开(公告)号：US5978138A
公开(公告)日：1999-11-02
申请号：US50647
申请日：1998-03-30
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B24/44 , G02B5/18 , G03B27/54
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+.first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.
摘要翻译：投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。通过去除通过聚光透镜的光的垂直入射分量来曝光物体。零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。斜入射分量光照射其上形成有图案的掩模。光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案而被光的相位差除去。由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

2. 发明授权

US5808796A Projection method and projection system and mask therefor 失效
公开(公告)号：US5808796A
公开(公告)日：1998-09-15
申请号：US827881
申请日：1997-04-07
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B5/18 , G03B27/54
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

3. 发明授权

US5726738A Aperture for off-axis illumination and projection exposure apparatus employing the same 失效
标题翻译：用于离轴照明的光圈和采用该光圈的投影曝光装置
公开(公告)号：US5726738A
公开(公告)日：1998-03-10
申请号：US689169
申请日：1996-08-06
申请人： Chang-jin Sohn , Cheol-hong Kim , Woo-sung Han
发明人： Chang-jin Sohn , Cheol-hong Kim , Woo-sung Han
IPC分类号： G03F7/20 , H01L21/027 , G03B27/42 , G03B27/52 , G03B27/54
CPC分类号： G03F7/701 , G03F7/70108
摘要： An aperture for an off-axis illumination (OAI) and a projection exposure apparatus which employs the same. In the aperture for an OAI having a light-intercepting region and a light-transmitting region, at least a portion of the light-transmitting region is prismoidal and diffracts incident light toward the periphery of the condenser lens. Accordingly, light intensity is increased due to an increased light-transmitting region, which can lead to a reduction in the exposure time required for photolithography procedures and to an increased productivity of semiconductor devices.
摘要翻译：用于离轴照明的光圈（OAI）和采用该光圈的投影曝光装置。在具有遮光区域和透光区域的OAI的开口中，透光区域的至少一部分是棱柱形的，并将入射光衍射到聚光透镜的周边。因此，由于增加的透光区域，光强度增加，这可导致光刻步骤所需的曝光时间的减少和半导体器件的生产率的提高。

4. 发明授权

US5608576A Projection method and projection system and mask therefor 失效
公开(公告)号：US5608576A
公开(公告)日：1997-03-04
申请号：US471628
申请日：1995-06-06
申请人： Woo-sung Han , Chang-jin Sohn , Ho-young Kang , Cheol-hong Kim , Seong-oon Choi
发明人： Woo-sung Han , Chang-jin Sohn , Ho-young Kang , Cheol-hong Kim , Seong-oon Choi
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

5. 发明授权

US5446587A Projection method and projection system and mask therefor 失效
标题翻译：投影方法和投影系统及其掩模
公开(公告)号：US5446587A
公开(公告)日：1995-08-29
申请号：US115732
申请日：1993-09-02
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B27/44 , G01B11/00 , G03B27/42
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.
摘要翻译：投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。通过去除通过聚光透镜的光的垂直入射分量来曝光物体。零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。斜入射分量光照射其上形成有图案的掩模。光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案而被光的相位差除去。由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

6. 发明授权

US5661601A Projection method and projection system and mask therefor 失效
标题翻译：投影方法和投影系统及其掩模
公开(公告)号：US5661601A
公开(公告)日：1997-08-26
申请号：US466180
申请日：1995-06-06
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B5/18 , G03B27/54
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.
摘要翻译：投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。通过去除通过聚光透镜的光的垂直入射分量来曝光物体。零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。斜入射分量光照射其上形成有图案的掩模。光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案的相位差而被去除。由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

7. 发明授权

US5985491A Reflectors for photolithographic projection and related systems and methods 失效
标题翻译：光刻投影反射器及相关系统及方法
公开(公告)号：US5985491A
公开(公告)日：1999-11-16
申请号：US664535
申请日：1996-06-17
申请人： Cheol-hong Kim , Chang-jin Sohn
发明人： Cheol-hong Kim , Chang-jin Sohn
IPC分类号： G02B5/08 , G03F1/00 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70191 , G03F1/26 , G03F1/52 , G03F7/70091 , G03F7/701 , G03F7/70583
摘要： A photolithographic projection system for selectively irradiating a photosensitive layer on a wafer according to a predetermined pattern on a mask is discussed. The photolithographic projection system includes a radiation source which generates radiation such as light. A reflector reflects the radiation from the radiation source on a path which intersects the wafer. This reflector includes a radiation reflecting portion and a phase-shifting and partially reflecting portion adjacent the radiation reflecting portion. The reflecting portion may include a plurality of reflecting portions surrounded by the absorbing portion, or the reflecting portion may surround the absorbing portion. Alternately, the reflector may include a reflecting portion and an absorbing portion adjacent the reflecting portion. Related methods are also discussed.
摘要翻译：讨论了用于根据掩模上的预定图案在晶片上选择性地照射光敏层的光刻投影系统。光刻投影系统包括产生诸如光的辐射的辐射源。反射器在与晶片相交的路径上反射来自辐射源的辐射。该反射器包括辐射反射部分和与辐射反射部分相邻的相移部分反射部分。反射部可以包括被吸收部包围的多个反射部，或者反射部可以包围吸收部。或者，反射器可以包括反射部分和邻近反射部分的吸收部分。还讨论了相关方法。

8. 发明授权

US5726741A Photolithographic projection systems including grating masks and related methods 失效
标题翻译：光刻投影系统包括光栅掩模和相关方法
公开(公告)号：US5726741A
公开(公告)日：1998-03-10
申请号：US668904
申请日：1996-06-24
申请人： Jong-wook Kye , Cheol-hong Kim , Tae-gyun Kim
发明人： Jong-wook Kye , Cheol-hong Kim , Tae-gyun Kim
IPC分类号： G02B27/44 , G03F1/00 , G03F1/68 , G03F7/20 , H01L21/027 , G03B27/42
CPC分类号： G03F7/701 , G03F7/70108 , G03F7/70158
摘要： A photolithographic projection system for transferring a predetermined pattern from a photomask to a wafer includes a radiation source and a grating mask. The radiation source projects radiation along a path through the photomask toward the wafer. The grating mask is positioned along the radiation path and is separate from the photomask. In a method for transferring a predetermined pattern from a photomask to a wafer, radiation is projected along a path through a grating mask and a photomask toward the wafer, and the grating mask is separate from the photomask.
摘要翻译：用于将预定图案从光掩模转印到晶片的光刻投影系统包括辐射源和光栅掩模。辐射源沿着通过光掩模的路径向晶片投射辐射。光栅掩模沿辐射路径定位并与光掩模分开。在将预定图案从光掩模转印到晶片的方法中，沿着通过光栅掩模和光掩模的路径朝向晶片投射辐射，并且光栅掩模与光掩模分离。

9. 发明授权

US5848901A Apparatus and method for recording and reproducing user comments on and from video tape 失效
标题翻译：用于在录像带上录制用户评论的装置和方法
公开(公告)号：US5848901A
公开(公告)日：1998-12-15
申请号：US496287
申请日：1995-06-29
申请人： Cheol-hong Kim , Hyun-jung Park
发明人： Cheol-hong Kim , Hyun-jung Park
IPC分类号： G09B5/06 , G09B7/00
CPC分类号： G09B5/065
摘要： A recording and reproducing apparatus using a video tape includes a user interfacer for generating comment information in response to a user key input, a video cassette recorder for recording the comment information on a predetermined region in a video tape, a transmission interfacer for enabling the user interfacer and the video cassette recorder to a transmit and receive a signal therebetween and a display for displaying a signal reproduced from the video cassette recorder so that user can recognize the signal. This apparatus is particularly useful for an educational-purposed video system.
摘要翻译：使用录像带的记录和再现装置包括用于响应于用户键输入产生评论信息的用户接口，用于在视频磁带中的预定区域记录注释信息的录像机，用于使用户能够使用的传输接口接口和视频盒式录像机之间发送和接收信号，以及用于显示从盒式录像机再现的信号的显示器，以便用户可以识别该信号。该装置对于教育用途的视频系统特别有用。

10. 发明授权

US5427649A Method for forming a pattern by silylation 失效
标题翻译：通过甲硅烷基形成图案的方法
公开(公告)号：US5427649A
公开(公告)日：1995-06-27
申请号：US153928
申请日：1993-11-18
申请人： Cheol-hong Kim , Woo-sung Sung
发明人： Cheol-hong Kim , Woo-sung Sung
IPC分类号： G03F7/26 , G03F7/075 , G03F7/09 , G03F7/095 , H01L21/30 , H01L21/00
CPC分类号： G03F7/0755 , G03F7/094 , G03F7/095
摘要： A method for forming a mask pattern using a multi-layer photoresist film process is disclosed. The processing is simplified from known processes by using a silylated photoresist film. A first photoresist layer is formed on substrate and part of the surface of the photoresist layer is silylated to thereby form a silylation layer. Then, a second photoresist layer is formed on the silylation layer, which is then exposed through the photo mask having a predetermined pattern. A second photoresist pattern is then formed after development. Then, a silylation layer pattern is formed by etching-back the silylation layer using the second photoresist pattern as an etching mask. The silylation pattern is then oxidized, and the first photoresist layer is etched using the oxidized silylation pattern, thereby forming a first photoresist pattern. A resolution increasing effect can be maintained using the two layer photoresist film structure without the need for an intermediate oxide film. Thus, the process is simplified and less undesired polymers are generated.
摘要翻译：公开了一种使用多层光致抗蚀剂膜工艺形成掩模图案的方法。通过使用甲硅烷基化的光致抗蚀剂膜，从已知方法简化了处理。在基板上形成第一光致抗蚀剂层，将光致抗蚀剂层的表面的一部分甲硅烷基化从而形成甲硅烷基层。然后，在甲硅烷基层上形成第二光致抗蚀剂层，然后通过具有预定图案的光掩模曝光。然后在显影后形成第二光致抗蚀剂图案。然后，通过使用第二光致抗蚀剂图案作为蚀刻掩模蚀刻甲硅烷基层来形成甲硅烷基层图案。然后将甲硅烷基化图案氧化，并且使用氧化的甲硅烷基化图案蚀刻第一光致抗蚀剂层，由此形成第一光致抗蚀剂图案。可以使用双层光致抗蚀剂膜结构保持分辨率增加效果，而不需要中间氧化膜。因此，该方法被简化并且产生较少不期望的聚合物。

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