专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5608576A Projection method and projection system and mask therefor 失效
公开(公告)号：US5608576A
公开(公告)日：1997-03-04
申请号：US471628
申请日：1995-06-06
申请人： Woo-sung Han , Chang-jin Sohn , Ho-young Kang , Cheol-hong Kim , Seong-oon Choi
发明人： Woo-sung Han , Chang-jin Sohn , Ho-young Kang , Cheol-hong Kim , Seong-oon Choi
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

2. 发明授权

US5446587A Projection method and projection system and mask therefor 失效
标题翻译：投影方法和投影系统及其掩模
公开(公告)号：US5446587A
公开(公告)日：1995-08-29
申请号：US115732
申请日：1993-09-02
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B27/44 , G01B11/00 , G03B27/42
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.
摘要翻译：投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。通过去除通过聚光透镜的光的垂直入射分量来曝光物体。零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。斜入射分量光照射其上形成有图案的掩模。光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案而被光的相位差除去。由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

3. 发明授权

US5978138A Projection exposure systems 失效
标题翻译：投影曝光系统
公开(公告)号：US5978138A
公开(公告)日：1999-11-02
申请号：US50647
申请日：1998-03-30
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B24/44 , G02B5/18 , G03B27/54
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+.first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.
摘要翻译：投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。通过去除通过聚光透镜的光的垂直入射分量来曝光物体。零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。斜入射分量光照射其上形成有图案的掩模。光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案而被光的相位差除去。由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

4. 发明授权

US5808796A Projection method and projection system and mask therefor 失效
公开(公告)号：US5808796A
公开(公告)日：1998-09-15
申请号：US827881
申请日：1997-04-07
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B5/18 , G03B27/54
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

5. 发明授权

US5661601A Projection method and projection system and mask therefor 失效
标题翻译：投影方法和投影系统及其掩模
公开(公告)号：US5661601A
公开(公告)日：1997-08-26
申请号：US466180
申请日：1995-06-06
申请人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
发明人： Ho-young Kang , Cheol-hong Kim , Seong-oon Choi , Woo-sung Han , Chang-jin Sohn
IPC分类号： G03F1/00 , G03F1/70 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , G02B5/18 , G03B27/54
CPC分类号： G03F7/70125 , G03F1/50 , G03F1/60 , G03F7/2002 , G03F7/70241 , G03F7/70283 , G03F1/26
摘要： A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.
摘要翻译：投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。通过去除通过聚光透镜的光的垂直入射分量来曝光物体。零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。斜入射分量光照射其上形成有图案的掩模。光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案的相位差而被去除。由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

6. 发明授权

US5851706A Phase shift masks including chromium oxide and alumina phase shifter patterns, and methods of manufacturing and using the same 失效
标题翻译：包括氧化铬和氧化铝移相器图案的相移掩模，及其制造和使用方法
公开(公告)号：US5851706A
公开(公告)日：1998-12-22
申请号：US882719
申请日：1997-06-25
申请人： Sung-chul Lim , Sang-gyun Woo , Ho-young Kang , Kwang-soo No
发明人： Sung-chul Lim , Sang-gyun Woo , Ho-young Kang , Kwang-soo No
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G02F9/00
CPC分类号： G03F1/32 , Y10T428/24926
摘要： A half tone phase shift mask includes a substrate which is transparent with respect to exposure radiation and a phase shifter pattern on the substrate. The phase shifter pattern comprises chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3). Fine patterns can therefore be formed using phase shift masking of exposure radiation having a 193 nm wavelength, such as light from an ArF excimer laser.
摘要翻译：半色调相移掩模包括相对于曝光辐射透明的衬底和在衬底上的移相器图案。移相器图案包括氧化铬（Cr 2 O 3）和氧化铝（Al 2 O 3）。因此，可以使用具有193nm波长的曝光辐射（例如来自ArF准分子激光器的光）的相移掩蔽来形成精细图案。

7. 发明授权

US5504627A Projection exposure system 失效
标题翻译：投影曝光系统
公开(公告)号：US5504627A
公开(公告)日：1996-04-02
申请号：US138223
申请日：1993-10-20
申请人： Hak Kim , Ho-young Kang
发明人： Hak Kim , Ho-young Kang
IPC分类号： G03B7/20 , G02B5/00 , G02B6/04 , G03F7/20 , H01L21/027 , G02B17/00 , G02B27/10
CPC分类号： G03F7/702 , G02B5/001 , G02B6/04 , G03F7/70108
摘要： A projection exposure system includes a light transmitting member located between a light source and fly's eye lens to receive most of the incident light and to transmit the incident light to the periphery of the fly's eye lens. Light transmission of the system may be carried out by a light pipe and conic reflection mirror concentrically placed therein, or by an optical fiber flux having a light entrance pupil consisting of a bundle of individual units and a ramified light exit pupil. The system has high light-utilizing efficiency and reduced exposure time because most of the incident light is used.
摘要翻译：投影曝光系统包括位于光源和蝇眼透镜之间的光透射构件，以接收大部分入射光并将入射光透射到蝇眼透镜的周边。系统的光透射可以通过同心地放置在其中的光管和圆锥反射镜进行，或者由具有由单个单元束和分支光出射光瞳组成的光入射光瞳的光纤通量进行。该系统具有高的光利用效率和减少的曝光时间，因为大多数入射光被使用。

8. 发明授权

US5387961A Illumination system for projection exposing apparatus 失效
标题翻译：投影曝光装置照明系统
公开(公告)号：US5387961A
公开(公告)日：1995-02-07
申请号：US155002
申请日：1993-11-22
申请人： Ho-young Kang
发明人： Ho-young Kang
IPC分类号： G03B27/32 , G02B3/00 , G02B3/02 , G03B27/54 , G03F7/20 , H01L21/027 , G03B27/72
CPC分类号： G02B3/0056 , G02B3/02 , G03F7/70058
摘要： An illumination system for a projection exposing apparatus having an improved fly's eyes lens is disclosed in which an individual lens of a fly's eyes lens includes a pattern portion having a plurality of annuluses with the same center but different diameters, and an etch portion disposed alternately with the pattern portion. The etch portion is formed to have a phase difference of 180 degrees with respect to the pattern portion.
摘要翻译：公开了一种具有改进的蝇眼透镜的投影曝光装置的照明系统，其中蝇眼透镜的单独透镜包括具有多个具有相同中心但不同直径的环形图案部分的图案部分，以及与图案部分。蚀刻部分形成为相对于图案部分具有180度的相位差。

9. 发明授权

US5386266A Projection exposure system 失效
标题翻译：投影曝光系统
公开(公告)号：US5386266A
公开(公告)日：1995-01-31
申请号：US155003
申请日：1993-11-22
申请人： Ho-young Kang
发明人： Ho-young Kang
IPC分类号： H01L21/30 , G02B3/02 , G03F7/20 , H01L21/027 , G03B27/54
CPC分类号： G03F7/70108 , G02B3/02
摘要： A projection exposure system includes a light source, a parallel-light forming lens and a fly's eyes lens which are sequentially disposed along a light traveling path. Between the parallel-light forming lens and fly's eyes lens is provided a light dispersing device which is composed of a first light dispersing lens with a concave lens or a second light dispersing lens with multiple small convex lenses. The light dispersing device diverges central light incident on the fly's eyes lens, to thereby increase peripheral light intensity. Accordingly, in tilted illumination, which uses peripheral light, light utilizing efficiency is raised.
摘要翻译：投影曝光系统包括依次沿光行进路径设置的光源，平行光形成透镜和蝇眼透镜。在平行光形成透镜和蝇眼透镜之间设置有由具有凹透镜的第一光分散透镜或具有多个小凸透镜的第二光分散透镜构成的光分散装置。光分散装置使入射在飞瞳透镜上的中心光发散，从而增加周边光强度。因此，在使用周边光的倾斜照明中，提高了光的利用效率。

10. 发明授权

US5853921A Methods of fabricating phase shift masks by controlling exposure doses 失效
标题翻译：通过控制暴露剂量制造相移掩模的方法
公开(公告)号：US5853921A
公开(公告)日：1998-12-29
申请号：US905792
申请日：1997-07-28
申请人： Seong-yong Moon , In-kyun Shin , Ho-young Kang
发明人： Seong-yong Moon , In-kyun Shin , Ho-young Kang
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30
摘要： A phase shift mask is fabricated by forming a radiation blocking layer on a phase shift mask substrate and forming a photoresist layer on the radiation blocking layer. First portions of the photoresist layer are exposed at a first exposure dose. Second portions of the photoresist layer are exposed at a second exposure dose that is greater than the first exposure dose, such that the second portions of the photoresist layer are wider than the first portions of the photoresist layer. The radiation blocking layer is etched using the photoresist layer as an etch mask, to thereby produce first apertures in the radiation blocking layer beneath the first portions of the photoresist layer and second apertures in the radiation blocking layer which are wider than the first apertures, beneath the second portions of the photoresist layer. The phase shift mask substrate is then etched beneath the second apertures. The first and second exposures are preferably performed by exposing the photoresist layer to electron beams of first and second exposure doses. The first and second portions of the photoresist layer may be overlapping or nonoverlapping. The first and second exposure doses may be multiple exposure doses which cumulatively provide the first and second exposure doses.
摘要翻译：通过在相移掩模基板上形成辐射阻挡层并在辐射阻挡层上形成光致抗蚀剂层来制造相移掩模。光致抗蚀剂层的第一部分以第一曝光剂量曝光。光致抗蚀剂层的第二部分以比第一曝光剂量大的第二曝光剂量曝光，使得光致抗蚀剂层的第二部分比光致抗蚀剂层的第一部分宽。使用光致抗蚀剂层作为蚀刻掩模蚀刻辐射阻挡层，从而在光致抗蚀剂层的第一部分下方的辐射阻挡层和辐射阻挡层中的第二孔之下产生比第一孔更宽的第一孔，下面光致抗蚀剂层的第二部分。然后在第二孔下方蚀刻相移掩模衬底。第一和第二曝光优选通过将光致抗蚀剂层暴露于第一和第二曝光剂量的电子束来进行。光致抗蚀剂层的第一和第二部分可以是重叠的或不重叠的。第一和第二暴露剂量可以是累积提供第一和第二暴露剂量的多次暴露剂量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式