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    • 7. 发明申请
    • METHOD OF OPERATING NONVOLATILE MEMORY DEVICE
    • 操作非易失性存储器件的方法
    • US20150146489A1
    • 2015-05-28
    • US14477513
    • 2014-09-04
    • Chang-Hyun LEEAlbert FAYRUSHIN
    • Chang-Hyun LEEAlbert FAYRUSHIN
    • G11C16/14G11C16/34
    • G11C16/14G11C16/0483G11C16/10G11C16/16G11C16/3459H01L27/11582
    • In a method of operating a nonvolatile memory device having a substrate and first through n-th word lines stacked in a direction perpendicular to the substrate, first through k-th word line voltages are applied to first through k-th word lines, respectively, which are formed adjacent to the substrate, among the first through n-th word lines. (k+1)-th through n-th word line voltages are applied to (k+1)-th through n-th word lines, respectively, which are formed above the first through k-th word lines, among the first through n-th word lines. An erase voltage, which is higher than the first through n-th word line voltages, is applied to the substrate, where n represents an integer equal to or greater than two, and k represents a positive integer smaller than n. Each of the (k+1)-th through n-th word line voltages is lower than each of the first through k-th word line voltages.
    • 在具有基板和在与基板垂直的方向上堆叠的第一至第n字线的非易失性存储器件的操作方法中,第一至第k字线电压分别施加到第一至第k字线, 在第一至第n字线之间形成与基板相邻的第一至第n字线。 第(k + 1)〜第n字线电压分别施加到形成在第一至第k字线之上的第(k + 1)至第n字线, 第n个字线。 将高于第一至第n字线电压的擦除电压施加到衬底,其中n表示等于或大于2的整数,并且k表示小于n的正整数。 第(k + 1)至第n字线电压中的每一个低于第一至第k字线电压中的每一个。