专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060176431A1 Method and apparatus for forming alignment layer for liquid crystal display 有权
标题翻译：用于形成液晶显示器取向层的方法和装置
公开(公告)号：US20060176431A1
公开(公告)日：2006-08-10
申请号：US11289413
申请日：2005-11-30
申请人： Chang Kim , Hyun Seo , Kwang Shin , Dae Nam
发明人： Chang Kim , Hyun Seo , Kwang Shin , Dae Nam
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , G02F1/133711 , G02F2001/133765 , G02F2202/07
摘要： A method for forming an alignment layer for a liquid crystal display includes preparing a substrate, applying an alignment material for initial alignment of a liquid crystal, and applying a field flux (e.g., an electric or magnetic field) to the alignment material to determine the alignment direction of the alignment material. Further disclosed is an apparatus for forming an alignment layer for a liquid crystal display. The apparatus comprises a substrate stage on which a substrate is mounted, and an electric or magnetic field generator installed at the periphery of the substrate stage. According to the method and the apparatus, since the alignment direction of an alignment material is determined by using an electric or magnetic field, no physical contact with a substrate is required and thus the problem of light leakage caused by rubbing alignment is solved.
摘要翻译：用于形成液晶显示器取向层的方法包括：准备衬底，施加用于液晶初始取向的取向材料，以及向对准材料施加磁场通量（例如电场或磁场）以确定对准材料的排列方向。还公开了一种用于形成液晶显示器取向层的装置。该装置包括安装有基板的基板台和安装在基板台周边的电场或磁场发生器。根据该方法和装置，由于通过使用电场或磁场来确定取向材料的取向方向，所以不需要与基板的物理接触，因此解决了由摩擦取向引起的漏光的问题。

2. 发明申请

US20060121643A1 Organic thin film transistor, method for fabricating the same, and liquid crystal display device with the same 有权
标题翻译：有机薄膜晶体管及其制造方法以及具有该薄膜晶体管的液晶显示装置
公开(公告)号：US20060121643A1
公开(公告)日：2006-06-08
申请号：US11207308
申请日：2005-08-19
申请人： Hyun Seo , Dae Nam , Nack Choi
发明人： Hyun Seo , Dae Nam , Nack Choi
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L51/0018
摘要： An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
摘要翻译：公开了一种有机薄膜晶体管及其制造方法。有机薄膜晶体管的制造方法包括在基板上形成栅电极。在包括栅电极的基板的整个表面上形成栅极绝缘层，并且在栅极绝缘层上以预定的间隔形成源极和漏极。在基板的整个表面上形成有机半导体层，在有机半导体层上形成第一保护层。图案化第一保护层，并且使用剩余的第一保护层作为掩模蚀刻有机半导体层。然后在基板的整个表面上形成第二保护层。

3. 发明申请

US20050263773A1 Liquid crystal display device having polycrystalline TFT and fabricating method thereof 有权
公开(公告)号：US20050263773A1
公开(公告)日：2005-12-01
申请号：US11194474
申请日：2005-08-02
申请人： Dae Nam
发明人： Dae Nam
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/786 , H01L29/15
CPC分类号： H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78696
摘要： A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.

4. 发明申请

US20050080296A1 Method of preparing fulvene compounds and method of preparing ansa-metallocene compounds using the compounds 失效
标题翻译：制备富烯化合物的方法和使用该化合物制备硫杂茂金属化合物的方法
公开(公告)号：US20050080296A1
公开(公告)日：2005-04-14
申请号：US10962482
申请日：2004-10-13
申请人： Young Park , Hyosun Lee , Sung Hong , Kwang Song , Boong Jeong , Dae Nam , Hye Jung , Bun Lee , Young Won
发明人： Young Park , Hyosun Lee , Sung Hong , Kwang Song , Boong Jeong , Dae Nam , Hye Jung , Bun Lee , Young Won
IPC分类号： C07C13/15 , C07C1/20 , C07C43/162 , C07C43/192 , C07F17/00 , C08F4/44 , C07C45/68 , C07F1/02
CPC分类号： C07F17/00 , C07C1/20 , C07C43/162 , C07C43/192 , C07C2601/10 , C07C13/15
摘要： There are provided a method of simply preparing a 1,4,6-substituted, 1,4-substituted, 1,6-substituted, or 1-substituted fulvene compound, the intermediates of the fulvene compound, and a method of preparing an ansa-metallocene compound in which two cyclopentadienyl ligands are bridged by one carbon and there are substituents only at positions adjacent to the bridging point of a cyclopentadienyl ligand, using the fulvene compound.
摘要翻译：提供了简单地制备1,4,6-取代的，1,4-取代的，1,6-取代的或1-取代的富烯化合物，富烯化合物的中间体的方法和制备ansa的方法茂金属化合物，其中两个环戊二烯基配位体被一个碳桥连，并且仅在邻近环戊二烯基配体的桥连点的位置处使用富烯化合物。

5. 发明申请

US20070060737A1 Novel polyarylate and method for preparing thereof 审中-公开
标题翻译：新型多芳基化合物及其制备方法
公开(公告)号：US20070060737A1
公开(公告)日：2007-03-15
申请号：US11518986
申请日：2006-09-12
申请人： Hyo Lee , Dong Kim , Hee Kim , Dae Nam , Sang Ryu , Boong Jeong , Ju Cha
发明人： Hyo Lee , Dong Kim , Hee Kim , Dae Nam , Sang Ryu , Boong Jeong , Ju Cha
IPC分类号： C08G63/19
CPC分类号： C08G63/193 , C08G63/547 , C08J5/18 , C08J2367/03 , C09D167/03 , C09D167/06
摘要： The present invention relates to a polyarylate prepared by a method comprising a step of copolymerizing divalent phenol, divalent aromatic carboxylic acid halide and the allyl bisphenol derivative. The polyarylate according to the invention is a novel polyarylate in which various functional groups can be introduced to the main chain of the polymer as well as the terminal of a polymer, and the concentration thereof can be adjusted. These functional groups allow improvement in the adhesion force by chemically bonding with the substrate or protective layer when coated, thus the polyarylate is suitably used for a film or a coating composition.
摘要翻译：本发明涉及一种通过包括使二价苯酚，二价芳族羧酸卤化物与烯丙基双酚衍生物共聚的方法制备的多芳基化合物。根据本发明的多芳基化合物是一种新的多芳基化合物，其中可以将各种官能团引入聚合物的主链以及聚合物的末端，并且可以调节其浓度。这些官能团通过在涂布时与基材或保护层进行化学键合来改善粘附力，因此多芳基化合物适合用于膜或涂料组合物。

6. 发明申请

US20070059456A1 Negative C-type compensation film and method of preparing the same 有权
标题翻译：负C型补偿膜及其制备方法
公开(公告)号：US20070059456A1
公开(公告)日：2007-03-15
申请号：US11519009
申请日：2006-09-12
申请人： Hyo Lee , Dong Kim , Hee Kim , Dae Nam , Sang Ryu , Boong Jeong , Ju Cha , Ho Lee
发明人： Hyo Lee , Dong Kim , Hee Kim , Dae Nam , Sang Ryu , Boong Jeong , Ju Cha , Ho Lee
IPC分类号： C09K19/00 , B32B27/36 , B32B27/30 , B32B27/32 , B32B17/06
CPC分类号： B32B27/08 , B32B17/06 , B32B27/30 , B32B27/32 , B32B27/36 , B32B2307/418 , B32B2457/202 , G02F1/133634 , Y10T428/1036 , Y10T428/105 , Y10T428/266 , Y10T428/31504 , Y10T428/31507 , Y10T428/31935 , Y10T428/31938 , Y10T428/31971
摘要： Disclosed are a negative C-type compensation film and a method of preparing the same. The negative C-type compensation film includes a) a base layer, and b) a polymer layer comprising polyarylate prepared by a method comprising the step of copolymerizing divalent phenols, divalent aromatic carboxylic acid halides, and allyl bisphenol derivatives, the base layer and the polymer layer being sequentially layered. The compensation film is capable of being used for the negative C-type compensation film without a stretching process, significantly reduces the thickness of the compensation film, and has significantly improved interlayer adhesion force in a multilayer structure.
摘要翻译：公开了负C型补偿膜及其制备方法。负C型补偿膜包括a）基底层，以及b）包含通过包括共价二价酚，二价芳族羧酸酰卤和烯丙基双酚衍生物的步骤的方法制备的聚芳酯的聚合物层，基底层和聚合物层依次层叠。补偿膜能够用于负C型补偿膜而不进行拉伸处理，显着降低了补偿膜的厚度，并且在多层结构中显着改善了层间粘合力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式