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1. 发明授权

US07175735B2 Method and apparatus for manufacturing coated conductor 失效
标题翻译：用于制造涂层导体的方法和装置
公开(公告)号：US07175735B2
公开(公告)日：2007-02-13
申请号：US10944608
申请日：2004-09-17
申请人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
发明人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
IPC分类号： C09J5/02 , B29C65/66 , H01L39/02 , H01L39/06 , B32B15/04
CPC分类号： C30B23/02 , C30B25/025 , C30B29/22 , H01L39/2422 , Y10S428/93 , Y10T29/49014
摘要： Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).
摘要翻译：本文公开了一种用于制造通过复制工艺外延生长的超导带的技术。根据该技术，可以使用环形基底制造长的超导带。还公开了一种金属氧化物器件的制造方法，其特征在于，在具有单晶或纹理表面的基底上形成溶剂可溶性分离层，在分离层上形成超导层，在超导体上形成支撑层层，并通过溶解在溶剂中去除分离层。根据该方法，可以制造由超导层和与浴分离的支撑层构成的超导带，并且具有与基底（复制）相同的结晶度。

2. 发明申请

US20050269021A1 Method and apparatus for manufacturing coated conductor 失效
标题翻译：用于制造涂层导体的方法和装置
公开(公告)号：US20050269021A1
公开(公告)日：2005-12-08
申请号：US10944608
申请日：2004-09-17
申请人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
发明人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
IPC分类号： C23C14/00 , C23C16/00 , C30B23/02 , C30B25/02 , C30B29/22 , H01B12/00 , H01B12/06 , H01L39/02 , H01L39/24 , B32B31/00
CPC分类号： C30B23/02 , C30B25/025 , C30B29/22 , H01L39/2422 , Y10S428/93 , Y10T29/49014
摘要： Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).
摘要翻译：本文公开了一种用于制造通过复制工艺外延生长的超导带的技术。根据该技术，可以使用环形基底制造长的超导带。还公开了一种金属氧化物器件的制造方法，其特征在于，在具有单晶或纹理表面的基底上形成溶剂可溶性分离层，在分离层上形成超导层，在超导体上形成支撑层层，并通过溶解在溶剂中去除分离层。根据该方法，可以制造由超导层和与浴分离的支撑层构成的超导带，并且具有与基底（复制）相同的结晶度。

3. 发明申请

US20050029091A1 Apparatus and method for reactive sputtering deposition 审中-公开
标题翻译：反应溅射沉积的装置和方法
公开(公告)号：US20050029091A1
公开(公告)日：2005-02-10
申请号：US10895560
申请日：2004-07-21
申请人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim
发明人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim
IPC分类号： C23C14/34 , C23C14/00 , C23C14/08 , C23C14/32
CPC分类号： C23C14/08 , C23C14/0047 , C23C14/0068
摘要： Disclosed herein is a reactive sputtering deposition apparatus in which a partition plate is provided between a sputtering target and a substrate. The reactive sputtering deposition apparatus comprises a deposition chamber for creating an inner process atmosphere of the apparatus, a target including a metal material to be deposited, a substrate on which a reaction product of the metal material separated from the target with a reactive gas is deposited, and a partition plate dividing the deposition chamber into a reaction chamber at the side of the substrate and a sputtering chamber at the side of the target and provided between the target and the substrate, wherein an opening is formed through a central portion of the partition plate to allow the metal material separated from the target to reach the substrate. According to the reactive sputtering deposition apparatus, the transfer of the reactive gas to the metal target is minimized and thus the oxidation of the metal target is prevented, thereby enabling deposition of a metal oxide thin film on the substrate at a high rate. Further disclosed is a reactive sputtering deposition method using the apparatus.
摘要翻译：本文公开了一种反应溅射沉积设备，其中在溅射靶和衬底之间设置有隔板。反应性溅射沉积装置包括用于产生装置的内部工艺气氛的沉积室，包括待沉积的金属材料的靶材，沉积有与靶材与反应气体分离的金属材料的反应产物沉积在其上的基板以及分隔板，其将沉积室分为在基板一侧的反应室和位于靶的侧面的溅射室，并设置在目标和基板之间，其中，通过分隔件的中心部分形成开口以允许从靶分离的金属材料到达基底。根据反应溅射沉积装置，反应气体向金属靶的转移被最小化，从而防止了金属靶的氧化，从而能够高速地在基板上沉积金属氧化物薄膜。进一步公开了使用该装置的反应溅射沉积方法。

4. 发明申请

US20060018980A1 Hair restorer composition using oriental herbs 审中-公开
标题翻译：头发恢复组成使用东方草药
公开(公告)号：US20060018980A1
公开(公告)日：2006-01-26
申请号：US11070604
申请日：2005-03-02
申请人： Byung-Su Lee
发明人： Byung-Su Lee
IPC分类号： A61K36/258 , A61K36/287
CPC分类号： A61Q7/00 , A61K8/97 , A61Q5/006
摘要： A hair restorer composition is produced by mixing 10 to 40 wt % of an Oriental herb extract of, 0.1 to 15 wt % of a viscosity control agent, 30 to 80 wt % of a surfactant, and 0.1 to 15 wt % of an oil. The Oriental herb extract may be obtained by heating Oriental herbs such as ginsengs and Chrysanthemum zawadskii with water for several hours. The composition makes it possible not only to promote restoration of hair and prevent loss of hair but also to mitigate the itching, give nutrition to hair, and improve the scalp. The Oriental herbs include the ginseng and Chrysanthemum zawadskii in a ratio of from 1:9 to 3:2.
摘要翻译：通过混合10〜40重量％的0.1〜15重量％的粘度调节剂的东方草药提取物，30〜80重量％的表面活性剂和0.1〜15重量％的油来制造头发恢复剂组合物。东方草药提取物可以通过将东方药如人参和菊花加热水加热数小时来获得。该组合物不仅可以促进头发的恢复并防止头发的损失，而且可以减轻瘙痒，给头发营养并改善头皮。东方草药包括人参和菊花zawadskii比例为1:9至3：2。

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