专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050269021A1 Method and apparatus for manufacturing coated conductor 失效
标题翻译：用于制造涂层导体的方法和装置
公开(公告)号：US20050269021A1
公开(公告)日：2005-12-08
申请号：US10944608
申请日：2004-09-17
申请人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
发明人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
IPC分类号： C23C14/00 , C23C16/00 , C30B23/02 , C30B25/02 , C30B29/22 , H01B12/00 , H01B12/06 , H01L39/02 , H01L39/24 , B32B31/00
CPC分类号： C30B23/02 , C30B25/025 , C30B29/22 , H01L39/2422 , Y10S428/93 , Y10T29/49014
摘要： Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).
摘要翻译：本文公开了一种用于制造通过复制工艺外延生长的超导带的技术。根据该技术，可以使用环形基底制造长的超导带。还公开了一种金属氧化物器件的制造方法，其特征在于，在具有单晶或纹理表面的基底上形成溶剂可溶性分离层，在分离层上形成超导层，在超导体上形成支撑层层，并通过溶解在溶剂中去除分离层。根据该方法，可以制造由超导层和与浴分离的支撑层构成的超导带，并且具有与基底（复制）相同的结晶度。

2. 发明授权

US07175735B2 Method and apparatus for manufacturing coated conductor 失效
标题翻译：用于制造涂层导体的方法和装置
公开(公告)号：US07175735B2
公开(公告)日：2007-02-13
申请号：US10944608
申请日：2004-09-17
申请人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
发明人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim , Hyoung-Joon Kim
IPC分类号： C09J5/02 , B29C65/66 , H01L39/02 , H01L39/06 , B32B15/04
CPC分类号： C30B23/02 , C30B25/025 , C30B29/22 , H01L39/2422 , Y10S428/93 , Y10T29/49014
摘要： Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).
摘要翻译：本文公开了一种用于制造通过复制工艺外延生长的超导带的技术。根据该技术，可以使用环形基底制造长的超导带。还公开了一种金属氧化物器件的制造方法，其特征在于，在具有单晶或纹理表面的基底上形成溶剂可溶性分离层，在分离层上形成超导层，在超导体上形成支撑层层，并通过溶解在溶剂中去除分离层。根据该方法，可以制造由超导层和与浴分离的支撑层构成的超导带，并且具有与基底（复制）相同的结晶度。

3. 发明申请

US20050029091A1 Apparatus and method for reactive sputtering deposition 审中-公开
标题翻译：反应溅射沉积的装置和方法
公开(公告)号：US20050029091A1
公开(公告)日：2005-02-10
申请号：US10895560
申请日：2004-07-21
申请人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim
发明人： Chan Park , Do-Jun Youm , Ho-Sup Kim , Kook-Chae Chung , Byung-Su Lee , Sun-Me Lim
IPC分类号： C23C14/34 , C23C14/00 , C23C14/08 , C23C14/32
CPC分类号： C23C14/08 , C23C14/0047 , C23C14/0068
摘要： Disclosed herein is a reactive sputtering deposition apparatus in which a partition plate is provided between a sputtering target and a substrate. The reactive sputtering deposition apparatus comprises a deposition chamber for creating an inner process atmosphere of the apparatus, a target including a metal material to be deposited, a substrate on which a reaction product of the metal material separated from the target with a reactive gas is deposited, and a partition plate dividing the deposition chamber into a reaction chamber at the side of the substrate and a sputtering chamber at the side of the target and provided between the target and the substrate, wherein an opening is formed through a central portion of the partition plate to allow the metal material separated from the target to reach the substrate. According to the reactive sputtering deposition apparatus, the transfer of the reactive gas to the metal target is minimized and thus the oxidation of the metal target is prevented, thereby enabling deposition of a metal oxide thin film on the substrate at a high rate. Further disclosed is a reactive sputtering deposition method using the apparatus.
摘要翻译：本文公开了一种反应溅射沉积设备，其中在溅射靶和衬底之间设置有隔板。反应性溅射沉积装置包括用于产生装置的内部工艺气氛的沉积室，包括待沉积的金属材料的靶材，沉积有与靶材与反应气体分离的金属材料的反应产物沉积在其上的基板以及分隔板，其将沉积室分为在基板一侧的反应室和位于靶的侧面的溅射室，并设置在目标和基板之间，其中，通过分隔件的中心部分形成开口以允许从靶分离的金属材料到达基底。根据反应溅射沉积装置，反应气体向金属靶的转移被最小化，从而防止了金属靶的氧化，从而能够高速地在基板上沉积金属氧化物薄膜。进一步公开了使用该装置的反应溅射沉积方法。

4. 发明授权

US08804417B2 Nonvolatile memory device including dummy memory cell and program method thereof 有权
标题翻译：包括虚拟存储器单元的非易失性存储器件及其程序方法
公开(公告)号：US08804417B2
公开(公告)日：2014-08-12
申请号：US13157343
申请日：2011-06-10
申请人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
发明人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
IPC分类号： G11C16/04 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/22
CPC分类号： G11C16/10 , G11C16/3418
摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.
摘要翻译：一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

5. 发明授权

US08322019B2 Multiple transposition method for superconducting wire 有权
标题翻译：超导线多重转置法
公开(公告)号：US08322019B2
公开(公告)日：2012-12-04
申请号：US12997652
申请日：2010-07-05
申请人： Kyeong Dal Choi , Ji Kwang Lee , Woo Seok Kim , Chan Park , Yung Il Kim
发明人： Kyeong Dal Choi , Ji Kwang Lee , Woo Seok Kim , Chan Park , Yung Il Kim
IPC分类号： H01B13/02 , H01B7/30 , H01B12/06 , H01B12/08
CPC分类号： H01B12/02 , H01B7/306 , Y02E40/641 , Y10T29/49014 , Y10T29/49194
摘要： Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other.
摘要翻译：提供了一种用于超导线的多重转置方法，通过使来自第二代超导线的每个超导线单元首先被转置，然后以每个单元的相位沿着该长度改变的方式移位每个超导线单元，包括通过在超导线上制作曲线来制备导线，使得外延生长的薄多层的超导线以锯齿形切割，然后反复制作曲线并通过机加工所需长度的线; 通过组合多个所制备的导线使相邻导线的曲线彼此接触并重叠而制造第一转置超导线单元; 通过布置第一转置超导线单元并通过沿着长度平行地定位多个第一转置的超导线单元来制备超导线单元束; 以及通过在所述超导线单元束的中心轴线上沿着要被扭曲并且彼此组合的长度旋转所述多个超导线单元，在所述第一转置的超导线单元上进行第二转置。

6. 发明申请

US20120273477A1 STEAM COOKING APPARATUS 审中-公开
标题翻译：蒸汽烹饪设备
公开(公告)号：US20120273477A1
公开(公告)日：2012-11-01
申请号：US13456897
申请日：2012-04-26
申请人： Guen Yong PARK , Jae Hyoun Kim , Cheol Jin Kim , Han Seong Kang , Jin Hae Cho , Eun Oh Kim , Chan Park , Dong-Ho Lee
发明人： Guen Yong PARK , Jae Hyoun Kim , Cheol Jin Kim , Han Seong Kang , Jin Hae Cho , Eun Oh Kim , Chan Park , Dong-Ho Lee
IPC分类号： A47J27/21 , H05B3/02
CPC分类号： F24C15/327
摘要： A steam cooking apparatus with improved water supply and drainage structures. The apparatus includes a body, a cooking compartment, a steam generator to supply steam into the cooking compartment, a water vessel to store water and supply the water into the steam generator, a water supply device including a holder and a slider slidably mounted in the holder so as to be withdrawn from the body, a first water supply tube connecting the slider and the water vessel, a second water supply tube connecting the water vessel and the steam generator, and a drain tube to drain water in the steam generator to the outside of the body. The drain tube includes an end fixed to the slider so that the end of the drain tube is withdrawn with the slider from the body when water in the steam generator is drained to the outside.
摘要翻译：具有改善给排水结构的蒸汽烹饪设备。该装置包括主体，烹饪室，蒸汽发生器，以将蒸汽供应到烹饪室中，水容器，用于存储水并将水供应到蒸汽发生器中;供水装置，其包括保持器和可滑动地安装在所述蒸汽发生器中的滑块保持器，以便从身体中取出，连接滑块和水容器的第一供水管，连接水容器和蒸汽发生器的第二供水管和排水管，以将蒸汽发生器中的水排出到身体外。排水管包括固定到滑块的端部，使得当蒸汽发生器中的水排出到外部时，排水管的端部与滑块一起从主体被抽出。

7. 发明申请

US20120068389A1 Methods of fabricating polycrystalline ceramic for thermoelectric devices 审中-公开
标题翻译：制造用于热电器件的多晶陶瓷的方法
公开(公告)号：US20120068389A1
公开(公告)日：2012-03-22
申请号：US13064222
申请日：2011-03-11
申请人： Chan Park , Wook Jo , Jin-Sang Kim , O-Jong Kwon
发明人： Chan Park , Wook Jo , Jin-Sang Kim , O-Jong Kwon
IPC分类号： C04B35/645
CPC分类号： C04B35/01 , B32B18/00 , C04B35/6268 , C04B35/645 , C04B2235/3201 , C04B2235/3208 , C04B2235/3213 , C04B2235/3272 , C04B2235/3275 , C04B2235/5292 , C04B2235/604 , C04B2235/612 , C04B2235/663 , C04B2235/666 , C04B2235/787
摘要： Provided is a method of fabricating polycrystalline ceramic for thermoelectric devices. The method includes preparing calcined ceramic powders, forming a ceramic sheet by uni-axially pressing the calcined ceramic powders, stacking a plurality of the ceramic sheets in a uni-axial direction, and cofiring the stacked the plurality of the ceramic sheets.
摘要翻译：提供一种制造用于热电装置的多晶陶瓷的方法。该方法包括制备煅烧陶瓷粉末，通过单轴压制煅烧陶瓷粉末，沿单轴方向堆叠多个陶瓷片材，并共烧多个陶瓷片材，形成陶瓷片材。

8. 发明授权

US08089332B2 Superconducting power transforming apparatus 有权
标题翻译：超导电力变压装置
公开(公告)号：US08089332B2
公开(公告)日：2012-01-03
申请号：US12679697
申请日：2009-11-19
申请人： Kyeong-Dal Choi , Ji-Kwang Lee , Woo-Seok Kim , Chan Park , Sun-Bok Choi
发明人： Kyeong-Dal Choi , Ji-Kwang Lee , Woo-Seok Kim , Chan Park , Sun-Bok Choi
IPC分类号： H01F27/02
CPC分类号： H01F36/00 , H01F6/065 , Y02E40/66
摘要： The present invention relates to a superconducting power transforming apparatus. The superconducting power transforming apparatus according to the present invention comprises a transformer housing having a transforming cable passing hole and filled with a liquid cooling means; a superconducting transformer housed in the transformer housing in a state that the superconducting transformer is immersed in the liquid cooling means; a tap changer housing having a tap changing cable passing hole and vacuum-sealed from outside; a power tap changer housed in the vacuum tap changer housing; and a cable linking pipe vacuum-sealed from the transformer housing and the tap changer housing, and linking the transforming cable passing hole with the tap changing passing hole in order that a transformer winding tap cable connecting the superconducting transformer and the power tap changer passes through. Consequently, it is possible to guarantee stable operation of a superconducting transformer which works at an extremely low temperature and a power tap changer as like On-Load Tap Changer which works at low temperature.
摘要翻译：本发明涉及一种超导功率变换装置。根据本发明的超导电力变换装置包括具有变换电缆通孔并且充满液体冷却装置的变压器壳体; 以超导变压器浸入液体冷却装置的状态容纳在变压器外壳中的超导变压器; 分接开关壳体，具有抽头更换电缆通孔并从外部真空密封; 一个容纳在真空分接开关壳体中的电源分接开关; 以及从变压器壳体和分接开关壳体真空密封的电缆连接管，并将变压电缆通孔与抽头更换通孔相连接，以便连接超导变压器和电源分接开关的变压器绕组电缆通过。因此，可以保证在极低温度下工作的超导变压器的稳定运行，以及在低温工作的有载分接开关的功率抽头变换器。

9. 发明申请

US20110305079A1 NONVOLATILE MEMORY DEVICE INCLUDING DUMMY MEMORY CELL AND PROGRAM METHOD THEREOF 有权
标题翻译：非易失性存储器件，包括DUMMY存储器单元及其程序方法
公开(公告)号：US20110305079A1
公开(公告)日：2011-12-15
申请号：US13157343
申请日：2011-06-10
申请人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
发明人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/3418
摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.
摘要翻译：一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

10. 发明申请

US20110239443A1 MULTIPLE TRANSPOSITION METHOD FOR SUPERCONDUCTING WIRE 有权
标题翻译：用于超导线的多种传输方法
公开(公告)号：US20110239443A1
公开(公告)日：2011-10-06
申请号：US12997652
申请日：2010-07-05
申请人： Kyeong Dal Choi , Ji K wang Lee , Woo Seok Kim , Chan Park , Yung II Kim
发明人： Kyeong Dal Choi , Ji K wang Lee , Woo Seok Kim , Chan Park , Yung II Kim
IPC分类号： H01L39/24
CPC分类号： H01B12/02 , H01B7/306 , Y02E40/641 , Y10T29/49014 , Y10T29/49194
摘要： Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other.
摘要翻译：提供了一种用于超导线的多重转置方法，通过使来自第二代超导线的每个超导线单元首先被转置，然后以每个单元的相位沿着该长度改变的方式移位每个超导线单元，包括通过在超导线上制作曲线来制备导线，使得外延生长的薄多层的超导线以锯齿形切割，然后反复制作曲线并通过机加工所需长度的线; 通过组合多个所制备的导线使相邻导线的曲线彼此接触并重叠而制造第一转置超导线单元; 通过布置第一转置超导线单元并通过沿着长度平行地定位多个第一转置的超导线单元来制备超导线单元束; 以及通过在所述超导线单元束的中心轴线上沿着要被扭曲并且彼此组合的长度旋转所述多个超导线单元，在所述第一转置的超导线单元上进行第二转置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式