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1. 发明申请

US20080113099A1 NANOLITHOGRAPHY METHODS AND PRODUCTS THEREFOR AND PRODUCED THEREBY 有权
标题翻译：纳米尺度方法及其生产的产品
公开(公告)号：US20080113099A1
公开(公告)日：2008-05-15
申请号：US11933181
申请日：2007-10-31
申请人： Chad Mirkin , Seunghun Hong , Vinayak P. Dravid
发明人： Chad Mirkin , Seunghun Hong , Vinayak P. Dravid
IPC分类号： B05D5/00
CPC分类号： G03F7/0002 , B05D1/007 , B05D1/185 , B05D1/26 , B82B3/00 , G01Q80/00 , G03F7/165 , Y10S977/85 , Y10S977/857 , Y10S977/86 , Y10S977/862 , Y10S977/863 , Y10S977/878 , Y10S977/882 , Y10S977/884 , Y10S977/885 , Y10S977/886
摘要： In one aspect, a method of nanolithography is provided using a driving force to control the movement of a deposition compound from a scanning probe microscope tip to a substrate. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
摘要翻译：一方面，使用驱动力来提供纳米光刻的方法，以控制沉积化合物从扫描探针显微镜尖端到基底的移动。本发明的另一方面提供了一种用于纳米光刻的尖端，其具有内腔和限制沉积化合物从尖端到基底的运动的孔。沉积化合物通过孔的运动速度和程度由驱动力控制。

2. 发明授权

US07722928B2 Nanolithography methods and products therefor and produced thereby 有权
标题翻译：纳米光刻方法和产品，由此生产
公开(公告)号：US07722928B2
公开(公告)日：2010-05-25
申请号：US11100483
申请日：2005-04-07
申请人： Chad A. Mirkin , Seunghun Hong , Vinayak P. Dravid
发明人： Chad A. Mirkin , Seunghun Hong , Vinayak P. Dravid
IPC分类号： B05D5/00 , B05D1/36 , B05D7/24 , B01J19/08 , C12Q1/68 , C12P19/34
CPC分类号： G03F7/0002 , B05D1/007 , B05D1/185 , B05D1/26 , B82B3/00 , G01Q80/00 , G03F7/165 , Y10S977/85 , Y10S977/857 , Y10S977/86 , Y10S977/862 , Y10S977/863 , Y10S977/878 , Y10S977/882 , Y10S977/884 , Y10S977/885 , Y10S977/886
摘要： In one aspect, a method of nanolithography is provided using a driving force to control the movement of a deposition compound from a scanning probe microscope tip to a substrate. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
摘要翻译：一方面，使用驱动力来提供纳米光刻的方法，以控制沉积化合物从扫描探针显微镜尖端到基底的移动。本发明的另一方面提供了一种用于纳米光刻的尖端，其具有内腔和限制沉积化合物从尖端到基底的运动的孔。沉积化合物通过孔的运动速度和程度由驱动力控制。

3. 发明授权

US07744963B2 Nanolithography methods and products therefor and produced thereby 有权
标题翻译：纳米光刻方法和产品，由此生产
公开(公告)号：US07744963B2
公开(公告)日：2010-06-29
申请号：US11933181
申请日：2007-10-31
申请人： Chad A. Mirkin , Seunghun Hong , Vinayak P. Dravid
发明人： Chad A. Mirkin , Seunghun Hong , Vinayak P. Dravid
IPC分类号： B05D1/28 , B05D3/14
CPC分类号： G03F7/0002 , B05D1/007 , B05D1/185 , B05D1/26 , B82B3/00 , G01Q80/00 , G03F7/165 , Y10S977/85 , Y10S977/857 , Y10S977/86 , Y10S977/862 , Y10S977/863 , Y10S977/878 , Y10S977/882 , Y10S977/884 , Y10S977/885 , Y10S977/886
摘要： In one aspect, a method of nanolithography is provided, the method comprising providing a substrate; providing a scanning probe microscope tip; coating the tip with a deposition compound; and subjecting said coated tip to a driving force to deliver said deposition compound to said substrate so as to produce a desired pattern. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
摘要翻译：一方面，提供一种纳米光刻方法，该方法包括提供基底; 提供扫描探针显微镜尖端; 用沉积化合物涂覆尖端; 并使所述涂覆的尖端经受驱动力以将所述沉积化合物输送到所述基底，以产生所需的图案。本发明的另一方面提供了一种用于纳米光刻的尖端，其具有内腔和限制沉积化合物从尖端到基底的运动的孔。沉积化合物通过孔的运动速度和程度由驱动力控制。

4. 发明申请

US20050172704A1 Methods utilizing scanning probe microscope tips and products thereof or produced thereby 有权
标题翻译：使用扫描探针显微镜尖端及其产品或由其制造的方法
公开(公告)号：US20050172704A1
公开(公告)日：2005-08-11
申请号：US10951031
申请日：2004-09-28
申请人： Chad Mirkin , Richard Piner , Seunghun Hong
发明人： Chad Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D1/00 , B05D1/18 , B05D1/26 , B82B3/00 , G01Q10/00 , G01Q60/00 , G01Q70/06 , G01Q70/16 , G01Q80/00 , G03F7/00 , G03F7/16 , G03F7/20 , H01L21/027 , G01B5/28
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基板为“墨水”。在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

5. 发明申请

US20050191434A1 Nanolithography methods and products therefor and produced thereby 有权
标题翻译：纳米光刻方法和产品，由此生产
公开(公告)号：US20050191434A1
公开(公告)日：2005-09-01
申请号：US11100483
申请日：2005-04-07
申请人： Chad Mirkin , Seunghun Hong , Vinayak Dravid
发明人： Chad Mirkin , Seunghun Hong , Vinayak Dravid
IPC分类号： B05D1/00 , B05D1/18 , B05D1/26 , B82B3/00 , G01Q60/00 , G01Q70/16 , G01Q80/00 , G03F7/00 , G03F7/16 , B05D5/00
CPC分类号： G03F7/0002 , B05D1/007 , B05D1/185 , B05D1/26 , B82B3/00 , G01Q80/00 , G03F7/165 , Y10S977/85 , Y10S977/857 , Y10S977/86 , Y10S977/862 , Y10S977/863 , Y10S977/878 , Y10S977/882 , Y10S977/884 , Y10S977/885 , Y10S977/886
摘要： In one aspect, a method of nanolithography is provided using a driving force to control the movement of a deposition compound from a scanning probe microscope tip to a substrate. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
摘要翻译：一方面，使用驱动力来提供纳米光刻的方法，以控制沉积化合物从扫描探针显微镜尖端到基底的移动。本发明的另一方面提供了一种用于纳米光刻的尖端，其具有内腔和限制沉积化合物从尖端到基底的运动的孔。沉积化合物通过孔的运动速度和程度由驱动力控制。

6. 发明申请

US20060014001A1 Fabrication of sub-50 nm solid-state nanostructures based on nanolithography 失效
标题翻译：基于纳米光刻制备低于50nm的固态纳米结构
公开(公告)号：US20060014001A1
公开(公告)日：2006-01-19
申请号：US10725939
申请日：2003-12-03
申请人： Hua Zhang , Chad Mirkin , Dana Weinberger , Seunghun Hong
发明人： Hua Zhang , Chad Mirkin , Dana Weinberger , Seunghun Hong
IPC分类号： B32B15/00
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , G03F7/2049 , Y10T428/24802 , Y10T428/24917
摘要： Combination of nanolithography and wet chemical etching including the fabrication of nanoarrays of sub-50 nm gold dots and line structures with deliberately designed approximately 12-100 nm gaps. These structures were made by initially using direct write nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid (MHA), on Au/Ti/SiOx/Si substrates and then wet chemical etching to remove the exposed gold. These are the smallest Au structures prepared by a wet chemical etching strategy. Also, Dip-Pen Nanolithography (DPN) has been used to generate resist layers on Au, Ag, and Pd that when combined with wet chemical etching can lead to nanostructures with deliberately designed shapes and sizes. Monolayers of mercaptohexadecanoic acid (MHA) or octadecanethiol (ODT), patterned by DPN, were explored as etch resists. They work comparably well on Au and Ag, but ODT is the superior material for Pd. MHA seems to attract the FeCl3 etchant and results in nonuniform etching of the underlying Pd substrate. Dots, lines, triangles and circles, ranging in size from sub-100 to several hundred nm have been fabricated on these substrates. These results show how one can use DPN as an alternative to more complex and costly procedures like electron beam lithography to generate nanostructures from inorganic materials.
摘要翻译：纳米光刻和湿化学蚀刻的组合，包括制造具有故意设计的约12-100nm间隙的亚50nm金点和线结构的纳米阵列。最初使用直写纳米光刻法在Au / Ti / SiO x / Si衬底上刻蚀抗蚀剂16-巯基十六烷酸（MHA），然后进行湿化学蚀刻以除去暴露的金。这些是通过湿化学蚀刻策略制备的最小的Au结构。此外，Dip-Pen Nanoithography（DPN）已经用于在Au，Ag和Pd上生成抗蚀剂层，当与湿化学蚀刻结合时，可以导致具有故意设计的形状和尺寸的纳米结构。作为抗蚀剂，研究了由DPN构图的巯基十六烷酸（MHA）或十八烷硫醇（ODT）的单层。它们在Au和Ag上相当好地工作，但ODT是Pd的优良材料。 MHA似乎吸引FeCl 3 3蚀刻剂，并导致下面的Pd底物的不均匀蚀刻。已经在这些基板上制造了尺寸从小于100到几百纳米的点，线，三角形和圆形。这些结果显示了如何使用DPN作为替代更复杂和昂贵的方法，如电子束光刻从无机材料产生纳米结构。

7. 发明申请

US20050181132A1 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US20050181132A1
公开(公告)日：2005-08-18
申请号：US10937877
申请日：2004-09-10
申请人： Chad Mirkin , Richard Piner , Seunghun Hong
发明人： Chad Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D1/00 , B05D1/18 , B05D1/26 , B82B3/00 , G01Q10/00 , G01Q60/00 , G01Q70/06 , G01Q70/16 , G01Q80/00 , G03F7/00 , G03F7/16 , G03F7/20 , H01L21/027 , B05D5/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substratte as “ink.” Capillary transport of molecules from the SPM tip to thee solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the facrication of a variety of microscale and nanoscale devices. The invention also provices substrates patterened by DPN, including submirocmeter combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compoind being selected so that AFM imaging perfromed using the coated AFM tipn is improved compared to AFM imaging preformed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基质为“墨”。在DPN中使用分子从SPM尖端到固体底物的毛细管转运，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微米级和纳米尺寸的器件。本发明还提供了DPN的基板，其中包括submirocmeter组合阵列，以及用于执行DPN的套件，设备和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水化合物涂覆AFM尖端，选择疏水性组合物，使得与使用未涂覆的AFM尖端预成型的AFM成像相比，使用涂覆的AFM尖端的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

8. 发明申请

US20120012817A1 Semiconductor devices and methods of manufacturing an operating same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20120012817A1
公开(公告)日：2012-01-19
申请号：US13200363
申请日：2011-09-23
申请人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
发明人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
IPC分类号： H01L29/76 , H01L21/336 , H01L29/788
CPC分类号： H01L29/792 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L51/0048 , H01L51/0541
摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.
摘要翻译：可以公开半导体器件以及制造和操作半导体器件的方法。半导体器件可以包括不同的纳米结构。半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。纳米线可以是双极碳纳米管（CNTs）。第一元件可以是沟道层。第二元件可以是电荷陷阱层。在这方面，半导体器件可以是晶体管或存储器件。

9. 发明申请

US20100035186A1 MANUFACTURING A GRAPHENE DEVICE AND A GRAPHENE NANOSTRUCTURE SOLUTION 审中-公开
标题翻译：制造石墨装置和石墨纳米结构解决方案
公开(公告)号：US20100035186A1
公开(公告)日：2010-02-11
申请号：US12210991
申请日：2008-09-15
申请人： Seunghun Hong , Juntae Koh
发明人： Seunghun Hong , Juntae Koh
IPC分类号： G03F7/20 , H01B1/04 , H01B1/24 , H01B1/22
CPC分类号： H01B1/24 , H01B1/04
摘要： Techniques for manufacturing a graphene structure solution and a graphene device are provided. A uniform graphene nanostructure solution is produced by applying anisotropic etching on a multi-layered graphene using an oxide nanowire as a mask. A graphene device is manufactured by dipping a substrate with a pattern of a molecule layer in a graphene nanostructure solution so that graphenes are aligned on the substrate with the pattern.
摘要翻译：提供了用于制造石墨烯结构溶液和石墨烯装置的技术。通过使用氧化物纳米线作为掩模在多层石墨烯上施加各向异性蚀刻来制造均匀的石墨烯纳米结构溶液。通过将具有分子层图案的衬底浸渍在石墨烯纳米结构溶液中来制造石墨烯器件，使得石墨烯与图案在衬底上对准。

10. 发明授权

US07446324B2 Methods utilizing scanning probe microscope tips and products thereof or produced thereby 有权
标题翻译：使用扫描探针显微镜尖端及其产品或由其制造的方法
公开(公告)号：US07446324B2
公开(公告)日：2008-11-04
申请号：US10951031
申请日：2004-09-28
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： G21G5/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基板为“墨水”。在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

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