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1. 发明授权

US08753813B2 Generation of combinatorial patterns by deliberate tilting of a polymer-pen array 有权
标题翻译：通过聚合物笔阵列的有意倾斜来产生组合图案
公开(公告)号：US08753813B2
公开(公告)日：2014-06-17
申请号：US13513618
申请日：2010-12-02
申请人： Chad A. Mirkin , Adam B. Braunschweig , Jinan Chai , Dan J. Eichelsdoerfer , Louise R. Giam , Xing Liao , Lu Shin Wong
发明人： Chad A. Mirkin , Adam B. Braunschweig , Jinan Chai , Dan J. Eichelsdoerfer , Louise R. Giam , Xing Liao , Lu Shin Wong
IPC分类号： C12Q1/68 , C12M1/00 , C12M1/34 , C12M3/00 , B05D3/00
CPC分类号： G03F7/0002 , B01J2219/00387 , B82Y10/00 , B82Y40/00
摘要： The disclosure relates to a method of forming a pattern having pattern elements with a plurality of sizes on a substrate surface with a tilted pen array that includes choosing a tilt geometry for a pen array with respect to a substrate, inducing the tilt geometry between the pen array and the substrate surface, and forming a pattern having pattern elements on the substrate surface with the titled pen array, whereby the size of the formed pattern elements varies across the substrate surface along the tilted axis or axes. For example, the tilt geometry is in reference to the substrate surface and comprises a first angle with respect to a first axis of the substrate and a second angle with respect to a second axis of the substrate, the second axis being perpendicular to the first axis, and at least one of the first and second angles being non-zero.
摘要翻译：本公开涉及一种在衬底表面上形成具有多个尺寸的图案元件的图案的方法，该倾斜笔阵列包括相对于衬底选择笔阵列的倾斜几何形状，从而引起笔之间的倾斜几何形状阵列和衬底表面，并且用标称笔阵列在衬底表面上形成具有图形元素的图案，由此形成的图案元素的尺寸沿着倾斜的轴线或轴线跨越衬底表面变化。例如，倾斜几何形状参考衬底表面并且包括相对于衬底的第一轴线的第一角度和相对于衬底的第二轴线的第二角度，第二轴线垂直于第一轴线并且第一和第二角度中的至少一个是非零。

2. 发明申请

US20130040856A1 Generation of Combinatorial Patterns by Deliberate Tilting of a Polymer-Pen Array 有权
标题翻译：通过有意图倾斜聚合物笔阵列来产生组合模式
公开(公告)号：US20130040856A1
公开(公告)日：2013-02-14
申请号：US13513618
申请日：2010-12-02
申请人： Chad A. Mirkin , Adam B. Braunschweig , Jinan Chai , Dan J. Eichelsdoerfer , Louise R. Giam , Xing Liao , Lu Shin Wong
发明人： Chad A. Mirkin , Adam B. Braunschweig , Jinan Chai , Dan J. Eichelsdoerfer , Louise R. Giam , Xing Liao , Lu Shin Wong
IPC分类号： C40B50/14 , C40B50/18 , C40B40/18 , C40B40/04 , C40B30/08 , C40B40/00 , B82Y5/00
CPC分类号： G03F7/0002 , B01J2219/00387 , B82Y10/00 , B82Y40/00
摘要： The disclosure relates to a method of forming a pattern having pattern elements with a plurality of sizes on a substrate surface with a tilted pen array that includes choosing a tilt geometry for a pen array with respect to a substrate, inducing the tilt geometry between the pen array and the substrate surface, and forming a pattern having pattern elements on the substrate surface with the titled pen array, whereby the size of the formed pattern elements varies across the substrate surface along the tilted axis or axes. For example, the tilt geometry is in reference to the substrate surface and comprises a first angle with respect to a first axis of the substrate and a second angle with respect to a second axis of the substrate, the second axis being perpendicular to the first axis, and at least one of the first and second angles being non-zero.
摘要翻译：本公开涉及一种在衬底表面上形成具有多个尺寸的图案元件的图案的方法，该倾斜笔阵列包括相对于衬底选择笔阵列的倾斜几何形状，从而引起笔之间的倾斜几何形状阵列和衬底表面，并且用标称笔阵列在衬底表面上形成具有图形元素的图案，由此形成的图案元素的尺寸沿着倾斜的轴线或轴线跨越衬底表面变化。例如，倾斜几何形状参考衬底表面并且包括相对于衬底的第一轴线的第一角度和相对于衬底的第二轴线的第二角度，第二轴线垂直于第一轴线并且第一和第二角度中的至少一个是非零。

3. 发明申请

US20100071098A1 SCANNING PROBE EPITAXY 审中-公开
标题翻译：扫描探头外观
公开(公告)号：US20100071098A1
公开(公告)日：2010-03-18
申请号：US12465616
申请日：2009-05-13
申请人： Chad A. Mirkin , Chang Liu , Yuhuang Wang , Adam B. Braunschweig , Xing Liao , Louise R. Giam , Byung Y. Lee , Shifeng Li , Joseph S. Fragala , Albert K. Henning
发明人： Chad A. Mirkin , Chang Liu , Yuhuang Wang , Adam B. Braunschweig , Xing Liao , Louise R. Giam , Byung Y. Lee , Shifeng Li , Joseph S. Fragala , Albert K. Henning
IPC分类号： G01Q60/00
CPC分类号： G03F7/0002 , G01Q20/04 , G01Q40/00 , G01Q70/10 , G01Q70/16 , G01Q80/00
摘要： A dual tip probe for scanning probe epitaxy is disclosed. The dual tip probe includes first and second tips disposed on a cantilever arm. The first and second tips can be a reader tip and a synthesis tip, respectively. The dual tip probe further includes a rib disposed on the cantilever arm between the first and second tips. The dual tip probe can also include a strain gauge disposed along the length of the cantilever arm.
摘要翻译：公开了一种用于扫描探针外延的双尖端探针。双尖头探针包括设置在悬臂上的第一和第二尖端。第一和第二提示可以分别是读取器尖端和合成尖端。双尖头探针还包括设置在第一和第二尖端之间的悬臂上的肋条。双尖头探针还可以包括沿着悬臂的长度设置的应变仪。

4. 发明申请

US20100115672A1 SCANNING PROBE EPITAXY 审中-公开
标题翻译：扫描探头外观
公开(公告)号：US20100115672A1
公开(公告)日：2010-05-06
申请号：US12465615
申请日：2009-05-13
申请人： Chad A. Mirkin , Chang Liu , Yuhuang Wang , Adam B. Braunschweig , Xing Liao , Louise R. Giam , Byung Y. Lee , Shifeng Li
发明人： Chad A. Mirkin , Chang Liu , Yuhuang Wang , Adam B. Braunschweig , Xing Liao , Louise R. Giam , Byung Y. Lee , Shifeng Li
IPC分类号： G01Q60/24
CPC分类号： G03F7/0002 , G01Q20/04 , G01Q40/00 , G01Q70/10 , G01Q70/16 , G01Q80/00
摘要： A dual tip probe for scanning probe epitaxy and a method of forming the dual tip probe are disclosed. The dual tip probe includes first and second tips disposed on a cantilever arm. The first and second tips can be a reader tip and a synthesis tip, respectively. The first tip can remain in contact with a substrate during writing and provide in situ characterization of the substrate and or structures written, while the second tip can perform in non-contact mode to write and synthesis nanostructures. This feature can allow the dual tip probe to detect errors in a printed pattern using the first tip and correct the errors using the second tip.
摘要翻译：公开了一种用于扫描探针外延的双尖端探针和形成双尖端探针的方法。双尖头探针包括设置在悬臂上的第一和第二尖端。第一和第二提示可以分别是读取器尖端和合成尖端。第一尖端可以在书写期间保持与基底接触，并且提供衬底和/或结构的原位表征，而第二尖端可以以非接触模式执行以写入和合成纳米结构。该功能可以允许双尖端探针使用第一个尖端检测印刷图案中的错误，并使用第二个尖端校正错误。

5. 发明申请

US20120167262A1 SILICON PEN NANOLITHOGRAPHY 有权
标题翻译：硅笔笔纳米尺度
公开(公告)号：US20120167262A1
公开(公告)日：2012-06-28
申请号：US13375361
申请日：2010-06-04
申请人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
发明人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
IPC分类号： G01Q70/14 , G01Q70/16
CPC分类号： G03F7/0002 , B81B2203/0361 , B81B2207/056 , B81C1/00111 , B81C1/0046 , B81C2201/0154 , B81C2201/0185 , B82Y10/00 , B82Y40/00 , Y10S977/732
摘要： Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.
摘要翻译：公开了使用具有连接到背衬层的多个笔的尖端阵列的光刻方法，其中尖端可以包括金属，准金属和/或半导电材料，并且背衬层可以包括弹性体聚合物。尖端阵列可用于执行光刻工艺，其中尖端涂覆有当尖端与衬底表面接触时沉积到衬底上的油墨（例如，图案化组合物）。尖端可以容易地平整到基底上，并且可以通过背衬层的光反射的变化和/或在尖端与基底表面接触时靠近尖端附近来光学地监测流平。

6. 发明授权

US08961853B2 Silicon pen nanolithography 有权
标题翻译：硅笔纳米光刻
公开(公告)号：US08961853B2
公开(公告)日：2015-02-24
申请号：US13375361
申请日：2010-06-04
申请人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
发明人： Chad A. Mirkin , Wooyoung Shim , Adam B. Braunschweig , Xing Liao , Jinan Chai , Jong Kuk Lim , Gengfeng Zheng , Zijian Zheng
IPC分类号： B29C59/02 , G03F7/00 , B81C1/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B81B2203/0361 , B81B2207/056 , B81C1/00111 , B81C1/0046 , B81C2201/0154 , B81C2201/0185 , B82Y10/00 , B82Y40/00 , Y10S977/732
摘要： Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.
摘要翻译：公开了使用具有连接到背衬层的多个笔的尖端阵列的光刻方法，其中尖端可以包括金属，准金属和/或半导电材料，并且背衬层可以包括弹性体聚合物。尖端阵列可用于执行光刻工艺，其中尖端涂覆有当尖端与衬底表面接触时沉积到衬底上的油墨（例如，图案化组合物）。尖端可以容易地平整到基底上，并且可以通过背衬层的光反射的变化和/或在尖端与基底表面接触时靠近尖端附近来光学地监测流平。

7. 发明申请

US20110165341A1 BLOCK COPOLYMER-ASSISTED NANOLITHOGRAPHY 审中-公开
标题翻译：嵌段共聚物辅助纳米尺度
公开(公告)号：US20110165341A1
公开(公告)日：2011-07-07
申请号：US12959105
申请日：2010-12-02
申请人： Chad A. Mirkin , Jinan Chai , Fengwei Huo , Zijian Zheng , Louise R. Giam
发明人： Chad A. Mirkin , Jinan Chai , Fengwei Huo , Zijian Zheng , Louise R. Giam
IPC分类号： B05D5/00 , B05D1/28 , B05D3/10 , B82Y40/00 , B82Y99/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： In accordance with an embodiment of the disclosure, a method for forming submicron size nanostructures on a substrate surface includes contacting a substrate with a tip coated with an ink comprising a block copolymer matrix and a nanostructure precursor to form a printed feature comprising the block copolymer matrix and the nanostructure precursor on the substrate, and reducing the nanostructure precursor of the printed feature to form a nanostructure having a diameter (or line width) of less than 1 μm.
摘要翻译：根据本公开的实施例，用于在衬底表面上形成亚微米级纳米结构的方法包括使基底与涂覆有包含嵌段共聚物基质和纳米结构前体的油墨的末端接触，以形成包含嵌段共聚物基质和纳米结构前体，并且还原印刷特征的纳米结构前体以形成直径（或线宽）小于1μm的纳米结构。

8. 发明授权

US08745761B2 Force feedback leveling of tip arrays for nanolithography 有权
标题翻译：用于纳米光刻的尖端阵列的力反馈调平
公开(公告)号：US08745761B2
公开(公告)日：2014-06-03
申请号：US12960439
申请日：2010-12-03
申请人： Chad A. Mirkin , Xing Liao , Adam B. Braunschweig
发明人： Chad A. Mirkin , Xing Liao , Adam B. Braunschweig
IPC分类号： G01L1/06 , G01N13/16 , B05D3/12
CPC分类号： G03F7/0002
摘要： A method of leveling a polymer pen array includes contacting a pen array with a surface and measuring a total force exerted on the surface by the pen array, the pen array being disposed at a first angle with respect to a first axis of the surface and a second angle with respect to a second axis of the surface; tilting one or both of the pen array and the surface to vary the first and second angles of the pen array with respect to the surface; measuring the total force exerted by the tilted pen array on the surface; and repeating the tilting and measuring steps until a global maximum of the total force exerted on the surface by the pen array is measured, thereby determining first and second angles which correspond to a leveled position of the pen array with respect to the surface.
摘要翻译：调整聚合物笔阵列的方法包括使笔阵列与表面接触并且通过笔阵列测量施加在表面上的总力，笔阵列相对于表面的第一轴线以第一角度设置，相对于表面的第二轴线的第二角度; 倾斜笔阵列和表面中的一个或两个以改变笔阵列相对于表面的第一和第二角度; 测量由倾斜笔阵列施加在表面上的总力; 并且重复倾斜和测量步骤，直到测量由笔阵列施加在表面上的总力的全局最大值，从而确定对应于笔阵列相对于表面的调平位置的第一和第二角度。

9. 发明申请

US20110165329A1 Force Feedback Leveling of Tip Arrays for Nanolithography 有权
标题翻译：用于纳米光刻的尖端阵列的力反馈调平
公开(公告)号：US20110165329A1
公开(公告)日：2011-07-07
申请号：US12960439
申请日：2010-12-03
申请人： Chad A. Mirkin , Xing Liao , Adam B. Braunschweig
发明人： Chad A. Mirkin , Xing Liao , Adam B. Braunschweig
IPC分类号： B05D5/00 , B05D1/28 , G01L1/06 , B82Y99/00
CPC分类号： G03F7/0002
摘要： A method of leveling a polymer pen array includes contacting a pen array with a surface and measuring a total force exerted on the surface by the pen array, the pen array being disposed at a first angle with respect to a first axis of the surface and a second angle with respect to a second axis of the surface; tilting one or both of the pen array and the surface to vary the first and second angles of the pen array with respect to the surface; measuring the total force exerted by the tilted pen array on the surface; and repeating the tilting and measuring steps until a global maximum of the total force exerted on the surface by the pen array is measured, thereby determining first and second angles which correspond to a leveled position of the pen array with respect to the surface.
摘要翻译：调整聚合物笔阵列的方法包括使笔阵列与表面接触并且通过笔阵列测量施加在表面上的总力，笔阵列相对于表面的第一轴线以第一角度设置，相对于表面的第二轴线的第二角度; 倾斜笔阵列和表面中的一个或两个以改变笔阵列相对于表面的第一和第二角度; 测量由倾斜笔阵列施加在表面上的总力; 并且重复倾斜和测量步骤，直到测量由笔阵列施加在表面上的总力的全局最大值，从而确定对应于笔阵列相对于表面的调平位置的第一和第二角度。

10. 发明申请

US20140038849A1 METHOD OF ANALYZING AN ANALYTE USING COMBINATORIAL ARRAYS AND UNIFORM PATTERNS 审中-公开
标题翻译：使用组合阵列和均匀图案分析分析的方法
公开(公告)号：US20140038849A1
公开(公告)日：2014-02-06
申请号：US14000129
申请日：2012-03-17
申请人： Chad A. Mirkin , Louise R. Giam , Matthew D. Massich
发明人： Chad A. Mirkin , Louise R. Giam , Matthew D. Massich
IPC分类号： B01J19/00
CPC分类号： B01J19/0046 , B01J2219/00387 , B01J2219/00527 , B01J2219/00585 , B01J2219/00596 , B01J2219/00612 , B01J2219/0063 , B01J2219/00637 , B01J2219/00659 , B01J2219/0072 , B01J2219/00743 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： The disclosure relates to a method of analyzing an analyte that includes forming a combinatorial pattern comprising pattern elements with a plurality of sizes and/or structures on a substrate surface with a tilted pen array, applying an analyte to the combinatorial pattern, and identifying a pattern element size and/or structure having a desired effect on an analyte parameter using the combinatorial pattern. The method further includes forming a uniform pattern comprising pattern elements each having substantially the same size and/or structure corresponding to the identified pattern element size and/or structure, and analyzing the effect of pattern element size and/or structure on the analyte parameter using the uniform pattern.
摘要翻译：本公开涉及一种分析分析物的方法，其包括用倾斜的笔阵列在基底表面上形成包括具有多个尺寸和/或结构的图案元素的组合图案，将分析物施加到组合图案，以及识别图案使用组合图案对分析物参数具有期望效果的元件尺寸和/或结构。该方法还包括形成包含图案元素的均匀图案，每个图案元素具有与所识别的图案元素尺寸和/或结构相对应的基本相同的尺寸和/或结构，并且使用以下方式分析图案元素尺寸和/或结构对分析物参数的影响均匀图案。

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