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1. 发明授权

US4904614A Method of manufacturing lateral IGFETS including reduced surface field regions 失效
标题翻译：制造横向IGFETS的方法，包括减少的表面场区域
公开(公告)号：US4904614A
公开(公告)日：1990-02-27
申请号：US197539
申请日：1988-05-23
申请人： Carole A. Fisher , David H. Paxman , David J. Coe
发明人： Carole A. Fisher , David H. Paxman , David J. Coe
IPC分类号： H01L21/336 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/739 , H01L29/78
CPC分类号： H01L29/66681 , H01L29/1095 , H01L29/66674 , H01L29/7816 , H01L29/7835 , H01L29/0615 , H01L29/0847 , H01L29/7393
摘要： A method of manufacturing a semiconductor device such as a lateral insulated gate field effect transistor is described in which impurities for forming first and second relatively shallow RESURF regions (8 and 11) of the opposite and the one conductivity type, respectively, are then introduced into the first region (4) and the semiconductor body is then heated first in an oxidizing atmosphere to cause the impurities to diffuse to form the RESURF regions (8 and 11) and to grow a relatively thick layer of insulating material on the given surface (3) at the same time. The relatively thick layer of insulating material is then defined to provide field oxide (14a) and gate oxide (14) then grown onto which is deposited a conductive gate layer (15,16) to form an insulated gate structure. Impurities are then introduced into the semiconductor body (3) using the insulated gate structure as a mask so as to form a lateral insulated gate field effect transistor (1).

2. 发明授权

US5128730A Semiconductor device and a circuit suitable for use in an intelligent power switch 失效
标题翻译：半导体器件和适用于智能电源开关的电路
公开(公告)号：US5128730A
公开(公告)日：1992-07-07
申请号：US727317
申请日：1991-07-02
申请人： David J. Coe , David H. Paxman , Franciscus A. C. M. Schoofs
发明人： David J. Coe , David H. Paxman , Franciscus A. C. M. Schoofs
IPC分类号： G05F3/24 , H01L21/336 , H01L27/04 , H01L27/07 , H01L27/088 , H01L29/78 , H03K17/06 , H03K17/687 , H03K17/78
CPC分类号： H01L29/7816 , H01L27/0727 , H01L27/088 , H01L29/7801 , H01L29/7802 , H03K17/06 , H03K17/687 , H01L29/41766
摘要： A semiconductor device and a circuit suitable for use in an intelligent power switch include an insulated gate field effect transistor (IGFET) (T2) and a power semiconductor switch (T1). The insulated gate field transistor IGFET (T2) is provided by a semiconductor body (6) which has a first region (7) of one conductivity type adjacent a given surface (6a) of the semiconductor body with the first region (7) forming at least part of a conductive path to a first main electrode of the power semiconductor switch. A second region (8) of the opposite conductivity type is provided within the first region adjacent the given surface (6a) and a third region (11) of the one conductivity type is provided adjacent the given surface (6a) within the second region (8), an area of the second region (8) underlying an insulated gate (14) provided on the given surface (6a) for defining a conduction channel (15) providing a gateable connection between the third region (11) and a fourth region (12) of the one conductivity type. The third and fourth regions (11 and 12) forming the source and drain regions of the IGFET and the second and third regions (8 and 11) together provide a zener diode, a conductive path being provided to the second region remote from the area underlying the insulated gate for reverse-biassing the zener diode. The IGFET may include a synchronous rectifier of a charge pump for providing a gate voltage signal to the power semiconductor switch which may be a power MOSFET (T2).
摘要翻译：适用于智能电源开关的半导体器件和电路包括绝缘栅场效应晶体管（IGFET）（T2）和功率半导体开关（T1）。绝缘栅场效应晶体管IGFET（T2）由半导体本体（6）提供，半导体本体（6）具有与半导体本体的给定表面（6a）相邻的一种导电类型的第一区域（7），第一区域（7）形成在到功率半导体开关的第一主电极的导电路径的至少一部分。相邻导电类型的第二区域（8）设置在与给定表面（6a）相邻的第一区域内，并且在第二区域内邻近给定表面（6a）设置一个导电类型的第三区域（11） 8），设置在给定表面（6a）上的绝缘栅极（14）下方的第二区域（8）的区域，用于限定在第三区域（11）和第四区域（11）之间提供可栅极连接的导电通道（15）（12）的一种导电类型。形成IGFET和第二和第三区域（8和11）的源极和漏极区域的第三和第四区域（11和12）一起提供齐纳二极管，导电路径被提供到远离其下面的区域的第二区域用于反向偏置齐纳二极管的绝缘栅极。 IGFET可以包括用于向可以是功率MOSFET（T2）的功率半导体开关提供栅极电压信号的电荷泵的同步整流器。

3. 发明授权

US4881119A Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：US4881119A
公开(公告)日：1989-11-14
申请号：US306243
申请日：1989-02-02
申请人： David H. Paxman , John A. G. Slatter , David J. Coe
发明人： David H. Paxman , John A. G. Slatter , David J. Coe
IPC分类号： H01L29/68 , H01L21/8249 , H01L27/06 , H01L27/07 , H01L29/73
CPC分类号： H01L29/7302 , H01L27/0716
摘要： A semiconductor device includes a bipolar transistor having an emitter region of one conductivity type formed in a base region of the opposite conductivity type, the base region being provided in a collector region of the one conductivity type. A first insulated gate field effect transistor provides a gateable connection to the emitter region of the bipolar transistor while a second insulated gate field effect transistor provides a charge extraction path from the base region when the bipolar transistor is turned off. The first insulated gate field effect transistor includes a further region of the other conductivity type provided in the emitter region, and a source region of the one conductivity type formed in the further region and an insulated gate overlying a channel area comprising at least part of the further region to provide a gateable connection between the emitter region and the source region of the first insulated gate field effect transistor. The second insulated gate field effect transistor having an insulated gate overlying a channel area comprising at least part of the emitter region adjacent the base region to provide a gateable connection between the base region and a source of the second insulated gate field effect transistor.
摘要翻译：半导体器件包括双极晶体管，其具有形成在相反导电类型的基极区域中的一种导电类型的发射极区域，该基极区域设置在一种导电类型的集电极区域中。第一绝缘栅场效应晶体管提供与双极晶体管的发射极区域的可选择连接，而第二绝缘栅场效应晶体管在双极晶体管截止时提供从基极区域的电荷提取路径。第一绝缘栅场效应晶体管包括设置在发射极区域中的另一导电类型的另一区域，以及形成在另一区域中的一种导电类型的源极区域和覆盖沟道区域的绝缘栅极，该绝缘栅极包括至少部分以在第一绝缘栅场效应晶体管的发射极区域和源极区域之间提供可选择的连接。第二绝缘栅场效应晶体管具有覆盖沟道区域的绝缘栅极，该沟道区域包括与基极区域相邻的发射极区域的至少一部分，以在第二绝缘栅场效应晶体管的基极区域和源极之间提供可栅极连接。

4. 发明授权

US4929884A High voltage semiconductor with integrated low voltage circuitry 失效
标题翻译：具有集成低压电路的高压半导体
公开(公告)号：US4929884A
公开(公告)日：1990-05-29
申请号：US203407
申请日：1988-06-06
申请人： Philip H. Bird , David J. Coe , David H. Paxman , Aart G. Korteling
发明人： Philip H. Bird , David J. Coe , David H. Paxman , Aart G. Korteling
IPC分类号： G05F1/56 , G05F3/24 , H01L27/088 , H01L27/092 , H01L29/78 , H03K17/06 , H03K17/082 , H03K17/567
CPC分类号： H01L27/0922 , G05F3/24 , H03K17/06 , H03K17/0822
摘要： Low voltage semiconductor devices are integrated monolithically with a high voltage semiconductor device on an electrically conductive substrate. The substrate forms an electrode of the high voltage device and is connected in use to the high voltage terminal of a power supply. The low voltage devices operate from a regulated low voltage supply, which is regulated with reference to the high voltage supply voltage, and not with reference to ground. This reduces the need to isolate the low voltage devices from the conductive substrate. An intelligent power switch circuit constructed in accordance with the invention is suitable for use in automotive and lighting applications.

5. 发明授权

US4774560A High voltage guard ring with variable width shallow portion 失效
标题翻译：具有可变宽度浅部分的高压保护环
公开(公告)号：US4774560A
公开(公告)日：1988-09-27
申请号：US129890
申请日：1987-11-10
申请人： David J. Coe
发明人： David J. Coe
IPC分类号： H01L21/331 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/73 , H01L29/74 , H01L29/76 , H01L29/772 , H01L29/78 , H01L29/861 , H01L29/34
CPC分类号： H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/7322 , H01L29/7811 , H01L29/7833 , H01L29/04 , H01L29/063 , H01L29/0847 , H01L29/1004 , H01L29/1095 , H01L29/408 , Y10S257/905
摘要： At least one annular region (11,12, . . . ) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reverse-biased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) and/or at least one inner annular region (11,12, . . . ) includes at least one shallower portion (10b,11b, . . . ) which extends laterally outwards from a deep portion (10a,11a,12a, . . . ) and faces the surrounding annular region to change the spacing and depth relationship of these regions. This permits high punch-through voltages to be achieved between the regions (10,11,12, . . . ) while reducing peak fields at the bottom outer corners of the regions (10,11,12, . . . ). Inwardly-extending shallow portions (11c,12c, . . . ) may also be included. The shallow portions (10b,11b,11c,12c . . . ) may extend around the whole of a perimeter of the region or be localized where higher electrostatic fields may occur around the perimeter.

6. 发明授权

US4270137A Field-effect devices 失效
标题翻译：场效应装置
公开(公告)号：US4270137A
公开(公告)日：1981-05-26
申请号：US970033
申请日：1978-12-15
申请人： David J. Coe
发明人： David J. Coe
IPC分类号： H01L29/06 , H01L29/40 , H01L29/43 , H01L29/78 , H01L27/02
CPC分类号： H01L29/7816 , H01L29/405 , H01L29/435 , H01L29/7801 , H01L29/7835
摘要： A field-effect device, e.g. an insulated-gate field-effect transistor has field-relief means in the form of a polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the formation of a potential distribution (V.sub.G, V.sub.D) along the resistance layer. The resistance layer and its potential distribution extend over the current path in a low-doped drain zone to permit a high drain breakdown voltage without an unacceptable increase in drain series resistance or unacceptable decrease in transconductance.
摘要翻译：场效应器件，例如绝缘栅场效应晶体管具有连接在其栅极和漏极之间的多晶硅或其它电阻层形式的场释放装置，以允许在器件的操作期间形成电位分布（VG，VD）电阻层。电阻层及其电势分布在低掺杂漏极区域内的电流通路上延伸，以允许高的漏极击穿电压，而不会导致漏极串联电阻的不可接受的增加或跨导的不可接受的降低。

7. 发明授权

US5894990A Synthetic jet actuator and applications thereof 失效
标题翻译：合成射流致动器及其应用
公开(公告)号：US5894990A
公开(公告)日：1999-04-20
申请号：US947815
申请日：1997-10-09
申请人： Ari Glezer , Mark G. Allen , David J. Coe , Barton L. Smith , Mark A. Trautman , John W. Wiltse
发明人： Ari Glezer , Mark G. Allen , David J. Coe , Barton L. Smith , Mark A. Trautman , John W. Wiltse
IPC分类号： B64C21/08 , B64G1/26 , B64G1/40 , F01D5/14 , F02K1/28 , F15C1/14 , F15C5/00 , F15D1/08 , F15D1/12 , F16K99/00 , F23R3/24 , H01L23/433 , H05K7/20 , B05B17/06
CPC分类号： F21V29/70 , B64C21/08 , B64G1/26 , B64G1/40 , B64G1/401 , F01D5/148 , F02K1/28 , F15C1/14 , F15C5/00 , F15D1/009 , F15D1/08 , F15D1/12 , F16K99/0001 , F16K99/0007 , F16K99/0048 , F21V29/40 , F21V29/63 , F21V29/677 , F21V29/83 , F23R3/24 , H01L23/4336 , H05K7/20172 , B64C2230/02 , B64C2230/04 , B64C2230/06 , B64C2230/14 , B64C2230/16 , B64C2230/18 , F16K2099/0094 , F16K2099/0098 , F16K99/0034 , F28F13/02 , H01L2924/0002 , H01L2924/3011 , Y02T50/166 , Y02T50/673
摘要： A synthetic jet actuator, which can be micromachined if desired, generates a synthetic jet stream characterized by a series of successive vortices that can be used for effectively entraining adjacent fluid. The synthetic jet actuator can be used to bend, or vector, a jet stream from another jet actuator. Further, because the synthetic jet actuator exhibits zero net mass flux, the synthetic jet actuator can be used within a bounded volume. In structure, the synthetic jet actuator comprises a housing defining an internal chamber and having an orifice. A flexible metallized diaphragm forms a wall of the housing and can change the volume of the chamber when moved. An electrode is disposed adjacent to and spaced from the diaphragm, and an electrical bias is imposed between the metallized diaphragm and the electrode by a control system to force movement of the diaphragm. As the diaphragm moves, the volume in the internal chamber changes and vortices are ejected from the chamber through the orifice.
摘要翻译：如果需要，可以进行微加工的合成射流致动器产生合成射流，其特征在于一系列连续旋涡，其可用于有效夹带相邻流体。合成射流致动器可用于弯曲或矢量来自另一射流致动器的喷射流。此外，由于合成射流致动器具有零的净质量通量，所以合成射流致动器可以在有界体积内使用。在结构上，合成射流致动器包括限定内部腔并具有孔口的壳体。柔性金属化膜片形成壳体的壁，并且可以在移动时改变腔室的体积。电极被设置成与隔膜相邻并与隔膜隔开，并且通过控制系统施加在金属化隔膜和电极之间的电偏压以迫使隔膜的移动。当隔膜移动时，内腔中的体积变化，并且涡流从腔室通过孔排出。

8. 发明授权

US4602266A High voltage guard ring with variable width shallow portion 失效
标题翻译：具有可变宽度浅部分的高压保护环
公开(公告)号：US4602266A
公开(公告)日：1986-07-22
申请号：US570565
申请日：1984-01-13
申请人： David J. Coe
发明人： David J. Coe
IPC分类号： H01L21/331 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/73 , H01L29/74 , H01L29/76 , H01L29/772 , H01L29/78 , H01L29/861
CPC分类号： H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/7322 , H01L29/7811 , H01L29/7833 , H01L29/04 , H01L29/063 , H01L29/0847 , H01L29/1004 , H01L29/1095 , H01L29/408 , Y10S257/905
摘要： At least one annular region (11,12, . . . ) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reverse-biased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) and/or at least one inner annular region (11,12, . . . ) includes at least one shallower portion (10b,11b, . . . ) which extends laterally outwards from a deep portion (10a,11a,12a, . . . ) and faces the surrounding annular region to change the spacing and depth relationship of these regions. This permits high punch-through voltages to be achieved between the regions (10,11,12, . . . ) while reducing peak fields at the bottom outer corners of the regions (10,11,12, . . . ). Inwardly-extending shallow portions (11c,12c, . . . ) may also be included. The shallow portions (10b,11b,11c,12c . . . ) may extend around the whole of a perimeter of the region or be localized where higher electrostatic fields may occur around the perimeter.
摘要翻译：至少一个环形区域（11,12 ...）围绕有源器件区域（10）延伸，并且位于从由器件形成的反向偏置pn结（20）的耗尽层（25）的扩展之内区域（10）以增加接合部（20）的击穿电压。装置区域（10）和/或至少一个内部环形区域（11,12 ...）包括至少一个较浅部分（10b，11b ......），其从深部（10a， 11a，12a，...）并且面向周围的环形区域以改变这些区域的间隔和深度关系。这允许在区域（10,11,12 ...之间）实现高穿透电压，同时减少区域（10,11,12 ...）的底部外角处的峰值场。还可以包括向内延伸的浅部分（11c，12c，...）。浅部（10b，11b，11c，12c ...）可以围绕该区域的整个周边延伸，或者被定位在周围周围可能出现较高静电场的位置。

9. 发明授权

US4521795A Insulated-gate field-effect transistors 失效
标题翻译：绝缘栅场效应晶体管
公开(公告)号：US4521795A
公开(公告)日：1985-06-04
申请号：US446141
申请日：1982-12-02
申请人： David J. Coe , Royce Lowis
发明人： David J. Coe , Royce Lowis
IPC分类号： H01L29/06 , H01L29/78
CPC分类号： H01L29/0696 , H01L29/7806 , H01L29/7813 , H01L29/782 , H01L29/0619 , H01L29/4236
摘要： An insulated-gate field-effect transistor which may be of the D-MOS or V-MOS type includes a source region (1) which is surrounded by a second region (2) of opposite conductivity type, itself surrounded by a third region (3) associated with the transistor drain (4). An insulated gate (12) of the transistor is present on a channel area of the second region (2) between the source region (1) and a first part (31) of the third region (3). The third region (3) also has a surface-adjoining second part (32) which is remote from the first part (31) and preferably has a lower doping concentration than the second and source regions (2, 1). An electrode layer (11) which may be the source electrode extends on said second part (32) of the third region (3) and is connected to said second region (2), and there is present between this electrode layer (11) and the second part (32) of the third region (3) a Schottky junction (33) having a lower forward voltage drop than the p-n junction (34) between the second and third regions (2,3). The transistor can have a fast switching speed even when driving inductive loads, since the Schottky junction (33) suppresses minority carrier injection at the forward-biased p-n junction (34) during voltage overswings. Preferably the second part (32) of the third region (3) is laterally bounded by the second region (2) which forms a guard ring for the Schottky junction (33) so maintaining a high blocking voltage capability. In order to further suppress minority carrier injection the electrode layer (11) preferably forms with the second region (2) a Schottky junction around which the source region (1) preferably extends as a guard ring.
摘要翻译：可以是D-MOS或V-MOS型的绝缘栅场效应晶体管包括由具有相反导电类型的第二区域（2）包围的源极区域（1），其本身被第三区域（ 3）与晶体管漏极（4）相关联。晶体管的绝缘栅极（12）存在于源极区域（1）和第三区域（3）的第一部分（31）之间的第二区域（2）的沟道区域上。第三区域（3）还具有远离第一部分（31）的表面相邻的第二部分（32），并且优选地具有比第二和源区域（2,1）更低的掺杂浓度。可以是源电极的电极层（11）在第三区域（3）的所述第二部分（32）上延伸并且连接到所述第二区域（2），并且存在于该电极层（11）和第三区域（3）的第二部分（32）具有比第二和第三区域（2,3）之间的pn结（34）更低的正向压降的肖特基结（33）。即使在驱动电感负载时，晶体管也可以具有快速的开关速度，因为肖特基结（33）在电压过流期间抑制正向偏置p-n结（34）处的少数载流子注入。优选地，第三区域（3）的第二部分（32）由形成用于肖特基结（33）的保护环的第二区域（2）横向界定，从而保持高的阻断电压能力。为了进一步抑制少数载流子注入，电极层（11）优选地与第二区域（2）形成肖特基结，源极区域（1）优选地围绕着肖特基接头作为保护环延伸。

10. 发明授权

US5758823A Synthetic jet actuator and applications thereof 失效
标题翻译：合成射流致动器及其应用
公开(公告)号：US5758823A
公开(公告)日：1998-06-02
申请号：US489490
申请日：1995-06-12
申请人： Ari Glezer , Mark G. Allen , David J. Coe , Barton L. Smith , Mark A. Trautman , John W. Wiltse
发明人： Ari Glezer , Mark G. Allen , David J. Coe , Barton L. Smith , Mark A. Trautman , John W. Wiltse
IPC分类号： B64C21/08 , B64G1/26 , B64G1/40 , F01D5/14 , F02K1/28 , F15C1/14 , F15C5/00 , F15D1/08 , F15D1/12 , F16K99/00 , F23R3/24 , H01L23/433 , H05K7/20 , B05B17/06
CPC分类号： F21V29/70 , B64C21/08 , B64G1/26 , B64G1/40 , B64G1/401 , F01D5/148 , F02K1/28 , F15C1/14 , F15C5/00 , F15D1/009 , F15D1/08 , F15D1/12 , F16K99/0001 , F16K99/0007 , F16K99/0048 , F21V29/40 , F21V29/63 , F21V29/677 , F21V29/83 , F23R3/24 , H01L23/4336 , H05K7/20172 , B64C2230/02 , B64C2230/04 , B64C2230/06 , B64C2230/14 , B64C2230/16 , B64C2230/18 , F16K2099/0094 , F16K2099/0098 , F16K99/0034 , F28F13/02 , H01L2924/0002 , H01L2924/3011 , Y02T50/166 , Y02T50/673
摘要： Synthetic jet actuator, which can be micromachined if desired, generates a synthetic jet stream characterized by a series of successive vortices that can be used for effectively entraining adjacent fluid. The synthetic jet actuator can be used to bend, or vector, a jet stream from another jet actuator. Further, because the synthetic jet actuator exhibits zero net mass flux, the synthetic jet actuator can be used within a bounded volume. In structure, the synthetic jet actuator comprises a housing defining an internal chamber and having an orifice. A flexible metallized diaphragm forms a wall of the housing and can change the volume of the chamber when moved. An electrode is disposed adjacent to and spaced from the diaphragm, and an electrical bias is imposed between the metallized diaphragm and the electrode by a control system to force movement of the diaphragm. As the diaphragm moves, the volume in the internal chamber changes and vortices are ejected from the chamber through the orifice.
摘要翻译：如果需要，可以进行微加工的合成射流致动器产生合成射流，其特征在于一系列连续的涡流，其可用于有效夹带相邻的流体。合成射流致动器可用于弯曲或矢量来自另一射流致动器的喷射流。此外，由于合成射流致动器具有零的净质量通量，所以合成射流致动器可以在有界体积内使用。在结构上，合成射流致动器包括限定内部腔并具有孔口的壳体。柔性金属化膜片形成壳体的壁，并且可以在移动时改变腔室的体积。电极被设置成与隔膜相邻并与隔膜隔开，并且通过控制系统施加在金属化隔膜和电极之间的电偏压以迫使隔膜的移动。当隔膜移动时，内腔中的体积变化，并且涡流从腔室通过孔排出。

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