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    • 5. 发明授权
    • Unbalanced plasma generating apparatus having cylindrical symmetry
    • 具有圆柱对称性的不平衡等离子体发生装置
    • US06497803B2
    • 2002-12-24
    • US09805331
    • 2001-03-13
    • David A. GlockerMark M. Romach
    • David A. GlockerMark M. Romach
    • C23C1435
    • H01J37/3461C23C14/352H01J37/3405
    • Apparatus for creating subatmospheric high plasma densities in the vicinity of a substrate in a work space for use in magnetron sputter deposition aided by ion bombardment of the substrate. Unbalanced flux lines emanating from cylindrical or frusto-conical targets cannot be captured across the work space, because the energizing magnets are cylindrical, and instead converge toward the axis of the apparatus to provide a high flux density, and therefore a high plasma density, in the vicinity of a substrate disposed in this region. The plasma profile and the coating material profile within the work space are both cylindrically symmetrical, resulting in a consistent and predictable coating on substrates.
    • 用于在工作空间中的基板附近产生低于大气压的高等离子体密度的装置,用于通过基板的离子轰击辅助的磁控溅射沉积。 从圆柱形或截头圆锥形目标发出的不平衡磁通线不能被捕获在整个工作空间内,因为激励磁体是圆柱形的,而是朝着装置的轴线会聚,以提供高的磁通密度,因此具有高的等离子体密度 设置在该区域中的基板的附近。 工作空间内的等离子体轮廓和涂层材料轮廓都是圆柱对称的,从而在基底上形成一致且可预测的涂层。
    • 9. 发明授权
    • Dual ion beam deposition of amorphous semiconductor films
    • 非晶半导体膜的双离子束沉积
    • US4637869A
    • 1987-01-20
    • US814837
    • 1985-12-30
    • David A. GlockerJohn R. MillerScott F. GrimshawHenry Windischmann
    • David A. GlockerJohn R. MillerScott F. GrimshawHenry Windischmann
    • C23C14/00C23C14/22C23C14/46H01L21/203C23C14/14C23C14/16C23C14/18
    • C23C14/46C23C14/0052C23C14/22H01L21/02381H01L21/0242H01L21/02422H01L21/02532H01L21/02631H01L21/02661
    • A sputtering process for efficiently preparing amorphous semiconducting films having a reduced number of localized states is disclosed. In particular, hydrogenated semiconductor films free of polyhydrides may be prepared according to the inventive process. In one application of the process, a silicon target is simultaneously bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target at relatively high rates, and by ions of a substance effective in passivating localized states in amorphous semiconducting films, such as hydrogen ions. The products of this sputtering process are collected on remotely located substrates to form a passivated amorphous semiconductor film. In another application of the process, a target composed of a semiconductor alloy is used with separate sputtering and passivating ion beams directed at the target to deposit a passivated compound semiconductor film. In still another application, one pair of two pairs of sputtering and passivating ion beams are employed to sputter each of two separate elemental semiconductor targets and to deposit a passivated compound semiconductor film. Films deposited according to the invention may be doped and junction structures formed in them during deposition by adding ions of a gaseous dopant to the beam or beams of passivating ions.
    • 公开了一种用于有效地制备具有减少数量的局部状态的非晶半导体膜的溅射工艺。 特别地,可以根据本发明的方法制备不含有氢化物的氢化半导体膜。 在该过程的一个应用中,硅靶同时被相对较重的溅射离子(例如氩离子)的相互轰击,其有效地以相对高的速率溅射靶,并且通过有效钝化非晶态的局部状态的物质的离子 半导体膜,例如氢离子。 将该溅射工艺的产物收集在远距离的衬底上以形成钝化的非晶半导体膜。 在该方法的另一应用中,使用由半导体合金组成的靶,其中分别喷射和靶向靶的钝化离子束以沉积钝化的化合物半导体膜。 在另一个应用中,使用一对两对溅射和钝化离子束来溅射两个单独的元素半导体靶中的每一个并沉积钝化的化合物半导体膜。 根据本发明沉积的膜可以是掺杂的,并且在沉积期间通过将气态掺杂剂的离子添加到钝化离子的束或束而形成在其中的结结构。