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1. 发明申请

US20100327413A1 HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN 审中-公开
标题翻译： HARDMASK打开和调试配置控制与HARDMASK开放
公开(公告)号：US20100327413A1
公开(公告)日：2010-12-30
申请号：US12595234
申请日：2008-05-02
申请人： Jong Pil Lee , Seiji Kawaguchi , Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
发明人： Jong Pil Lee , Seiji Kawaguchi , Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
IPC分类号： H01L29/00 , H01L21/3065 , C23F1/08 , H01L21/306
CPC分类号： H01L21/31144 , H01L21/31122
摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O2.
摘要翻译：提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。硬掩模层设置在图案化掩模下方。将基板放置在等离子体处理室中。通过将包括COS组分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体还可以包括O 2。

2. 发明申请

US20060226120A1 Etch profile control 有权
标题翻译：蚀刻轮廓控制
公开(公告)号：US20060226120A1
公开(公告)日：2006-10-12
申请号：US11095932
申请日：2005-03-30
申请人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
发明人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
IPC分类号： C23F1/00 , B44C1/22 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
摘要翻译：提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。将基板放置在等离子体处理室中。包含O 2 2的蚀刻剂气体和包含H 2 S 2的至少一种的硫成分气体和含有至少一个碳硫键的化合物被提供到等离子体室中。等离子体由蚀刻剂气体形成。通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

3. 发明授权

US07645707B2 Etch profile control 有权
标题翻译：蚀刻轮廓控制
公开(公告)号：US07645707B2
公开(公告)日：2010-01-12
申请号：US11095932
申请日：2005-03-30
申请人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric A. Hudson , Aaron Eppler
发明人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric A. Hudson , Aaron Eppler
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
摘要翻译：提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。将基板放置在等离子体处理室中。包含O 2和包含至少一种H2S的硫成分气体的蚀刻剂气体和含有至少一个碳硫键的化合物被提供到等离子体室中。等离子体由蚀刻剂气体形成。通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

4. 发明申请

US20060194439A1 Etch with striation control 失效
公开(公告)号：US20060194439A1
公开(公告)日：2006-08-31
申请号：US11223363
申请日：2005-09-09
申请人： S.M. Sadjadi , Peter Cirigliano , Ji Kim , Zhisong Huang , Eric Hudson
发明人： S.M. Sadjadi , Peter Cirigliano , Ji Kim , Zhisong Huang , Eric Hudson
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0273 , H01L21/0274 , H01L21/31144 , H01L21/76802 , Y10S438/942 , Y10S438/949
摘要： A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.

5. 发明申请

US20070075038A1 Vertical profile fixing 有权
标题翻译：垂直型材固定
公开(公告)号：US20070075038A1
公开(公告)日：2007-04-05
申请号：US11244870
申请日：2005-10-05
申请人： S.M. Sadjadi , Peter Cirigliano , Jisoo Kim , Zhisong Huang , Eric Hudson
发明人： S.M. Sadjadi , Peter Cirigliano , Jisoo Kim , Zhisong Huang , Eric Hudson
IPC分类号： B44C1/22 , C23F1/00 , H01L21/306 , C03C15/00
CPC分类号： H01L21/0273 , H01L21/31144
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
摘要翻译：提供了一种蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除面具。

6. 发明申请

US20220120523A1 A Recoilless Apparatus For Guns 有权
公开(公告)号：US20220120523A1
公开(公告)日：2022-04-21
申请号：US17100862
申请日：2020-11-21
申请人： Zhisong Huang
发明人： Zhisong Huang
IPC分类号： F41A1/10
摘要： The invention relates to a recoilless apparatus for firing conventional cartridge-based ammunitions comprising a gun barrel and a compensating mass launch tube wherein a projectile is accelerated in one direction inside said gun barrel counterbalanced by a compensating mass accelerated in the opposite direction inside said launch tube thereby minimizing recoil and further providing means of automatic ammunition handling.

7. 发明申请

US20090121324A1 ETCH WITH STRIATION CONTROL 审中-公开
标题翻译： ETCH与测度控制
公开(公告)号：US20090121324A1
公开(公告)日：2009-05-14
申请号：US12349142
申请日：2009-01-06
申请人： S. M. Reza Sadjadi , Peter Cirigliano , Ji Soo Kim , Zhisong Huang , Eric A. Hudson
发明人： S. M. Reza Sadjadi , Peter Cirigliano , Ji Soo Kim , Zhisong Huang , Eric A. Hudson
IPC分类号： C23F1/08 , H01L29/00
CPC分类号： H01L21/0273 , H01L21/0274 , H01L21/31144 , H01L21/76802 , Y10S438/942 , Y10S438/949
摘要： A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.
摘要翻译：提供了蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁具有形成峰和谷的条纹。光致抗蚀剂特征的侧壁的条纹减小。减小条纹包括至少一个周期，其中每个周期包括蚀刻由光致抗蚀剂特征的侧壁的条纹形成的峰，并沉积在光致抗蚀剂特征的侧壁上。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除光致抗蚀剂掩模。

8. 发明授权

US07514045B2 Covered microchamber structures 有权
标题翻译：覆盖微型结构
公开(公告)号：US07514045B2
公开(公告)日：2009-04-07
申请号：US10346279
申请日：2003-01-17
申请人： Craig S. Corcoran , Cindy Chia-Wen Chiu , William J. Jaecklein , Dong-Tsai Hseih , Eng-Pi Chang , Le-Hoa Hong , Zhisong Huang , Michael Lang , Ronald Sieloff , Philip Yi Zhi Chu
发明人： Craig S. Corcoran , Cindy Chia-Wen Chiu , William J. Jaecklein , Dong-Tsai Hseih , Eng-Pi Chang , Le-Hoa Hong , Zhisong Huang , Michael Lang , Ronald Sieloff , Philip Yi Zhi Chu
IPC分类号： B01L11/00 , B32B3/00
CPC分类号： B81C3/002 , B01L3/502707 , B01L2200/0689 , B01L2200/12 , B01L2300/041 , B01L2300/0816 , B29C53/063 , B29C59/007 , B29C59/02 , B29C65/08 , B29C65/4895 , B29C65/5035 , B29C65/52 , B29C65/526 , B29C65/542 , B29C65/7829 , B29C66/12463 , B29C66/322 , B29C66/53461 , B29C66/54 , B29C66/542 , B29C66/549 , B29C66/727 , B29C66/7373 , B29C66/8322 , B29C66/83413 , B29L2024/006 , B29L2031/601 , B29L2031/756 , B81B2201/058
摘要： A microchamber structure (100) comprising a base layer (120), a lid layer (130), and at least one microchamber (140) having a cross-sectional shape with a depth (d) of less than 1000 microns and a width (w) of less than 1000 microns. The base layer (120) includes a depression (122) and the lid layer (104) includes a projection (132) positioned within the depression (122) to together define the cross-sectional shape of the microchamber (140).
摘要翻译：一种微孔结构（100），包括基底层（120），盖层（130）和至少一个具有深度（d）小于1000微米的横截面形状的微室（140）和宽度（ w）小于1000微米。底层（120）包括凹陷（122），并且盖层（104）包括位于凹部（122）内的凸起（132），以一起限定微室（140）的横截面形状。

9. 发明申请

US20070264830A1 Pitch reduction 有权
标题翻译：节距减少
公开(公告)号：US20070264830A1
公开(公告)日：2007-11-15
申请号：US11432194
申请日：2006-05-10
申请人： Zhisong Huang , Jeffrey Marks , S.M. Sadjadi
发明人： Zhisong Huang , Jeffrey Marks , S.M. Sadjadi
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.
摘要翻译：提供了一种用于在蚀刻层中提供特征的方法。在蚀刻层上提供具有牺牲特征的牺牲图案层。保形侧壁形成在牺牲特征中，包括侧壁形成工艺的至少两个循环，其中每个循环包括侧壁沉积阶段和侧壁轮廓成形阶段。除去共形侧壁之间的牺牲图案层的部分，留下保形侧壁，其中保形侧壁之间的间隙被选择性地去除牺牲图案层的部分。使用保形侧壁作为蚀刻掩模在蚀刻层中蚀刻特征，其中蚀刻层中的特征被蚀刻通过牺牲图案层的部分被选择性去除的共形侧壁之间的间隙。

10. 发明申请

US20070066038A1 Fast gas switching plasma processing apparatus 审中-公开
标题翻译：快速气体开关等离子体处理装置
公开(公告)号：US20070066038A1
公开(公告)日：2007-03-22
申请号：US11601293
申请日：2006-11-17
申请人： S.M. Sadjadi , Zhisong Huang , Jose Sam , Eric Lenz , Rajinder Dhindsa
发明人： S.M. Sadjadi , Zhisong Huang , Jose Sam , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/00 , C23F1/00 , H01L21/306 , C23C16/00 , H01L21/20
CPC分类号： H01J37/32091 , H01J37/32155 , H01J37/3244 , H01J37/32449
摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
摘要翻译：提供具有电极等离子体限制区的等离子体室。用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

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