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1. 发明授权

US11595021B2 Saw resonator comprising layers for attenuating parasitic waves 有权
公开(公告)号：US11595021B2
公开(公告)日：2023-02-28
申请号：US16493560
申请日：2018-03-09
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , SOITEC
发明人： Thu Trang Vo , Jean-Sebastien Moulet , Alexandre Reinhardt , Isabelle Huyet , Alexis Drouin , Yann Sinquin
IPC分类号： H03H9/02 , H03H3/08 , H03H9/145 , H03H9/25
摘要： The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

2. 发明授权

US11601107B2 Method for the production of a bulk acoustic wave resonator with a reduced parasitic capacitance 有权
公开(公告)号：US11601107B2
公开(公告)日：2023-03-07
申请号：US16956375
申请日：2018-12-21
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Marie Gorisse , Alexandre Reinhardt , Lamine Benaissa , Jean-Sébastien Moulet
IPC分类号： H03H3/02 , H03H9/02 , H03H9/13 , H03H9/17
摘要： A method for producing an adjustable bulk acoustic wave resonator comprising a transducer stack (E1) and a tuning stack (E2). According to the invention, transducer stack (E1) includes two defined electrodes (4, 6) and piezoelectric material (2), and stack (E2) includes a layer of piezoelectric material (8) and two defined electrodes (10, 12). The method includes: a) production of the transducer stack; b) formation of an electrically insulating layer on an electrode (6) of the transducer stack; c) formation of a defined electrode (10) of the tuning stack on the electrically insulting layer such that it is aligned with the electrodes of the transducer stack; d) assembly, on the electrode (10), of a substrate of piezoelectric material; e) fracturing of the substrate of piezoelectric material; and f) formation of the other defined electrode (12) of the tuning stack, aligned with the defined electrode (10).

3. 发明授权

US09099984B2 HBAR resonator comprising a structure for amplifying the amplitude of at least one resonance of said resonator and methods for producing such a resonator 有权
标题翻译： HBAR谐振器包括用于放大所述谐振器的至少一个谐振的振幅的结构和用于产生这种谐振器的方法
公开(公告)号：US09099984B2
公开(公告)日：2015-08-04
申请号：US13847432
申请日：2013-03-19
申请人： Commissariat A l'Energie Atomique et Aux Energies Alternatives , Centre National de la Recherche Scientifique
发明人： Alexandre Reinhardt , Sylvain Ballandras , Francois Perruchot
IPC分类号： H03H9/00 , H01L41/09 , H03H9/17 , H03H9/02 , H03H3/04
CPC分类号： H03H9/17 , H03H3/04 , H03H9/02078 , H03H9/172 , Y10T29/42
摘要： An HBAR resonator comprises, on a substrate, a piezoelectric transducer, said transducer comprising at least one piezoelectric layer, at least two series of electrodes and exhibiting resonance frequencies Fi corresponding to wavelengths λi, characterized in that it comprises an amplification structure comprising at least one resonant cavity arranged on the substrate between said transducer and said substrate or in said substrate, this amplification structure being suitable for mechanically resonating at least one of the resonance frequencies Fi of said transducer corresponding to said wavelength λi, so as to amplify the amplitude of the electrical resonance generated at said frequency.
摘要翻译： HBAR谐振器在衬底上包括压电换能器，所述换能器包括至少一个压电层，至少两个电极系列，并且具有对应于波长λ1的谐振频率Fi，其特征在于，其包括放大结构，该放大结构包括至少一个谐振腔，其布置在所述传感器和所述衬底之间或所述衬底中的衬底上，该放大结构适用于对应于所述波长λi的所述换能器的谐振频率Fi中的至少一个谐振频率Fi进行机械共振，以便放大在所述频率下产生的电共振。

4. 发明授权

US08907741B2 Acoustic wave power device 有权
标题翻译：声波功率器件
公开(公告)号：US08907741B2
公开(公告)日：2014-12-09
申请号：US13661865
申请日：2012-10-26
申请人： Commissariat a l'Energie Atomique et aux Energies Alternatives
发明人： Alexandre Reinhardt
IPC分类号： H03H9/74 , H03H9/76
CPC分类号： H03H9/74 , H03H9/76
摘要： A power device comprises an output port and at least one first acoustic pathway and one second acoustic pathway, each acoustic pathway comprising at least one first input acoustic wave transducer connected to an input port, and an output acoustic wave transducer connected to the output port. Each acoustic pathway further comprises a floating acoustic wave transducer connected to a floating port; the input transducer and the output transducer being separated by a distance equal to (2m+1)λ/4 with m an integer and λ the propagation wavelength; the input transducer and the floating transducer being separated by a distance equal to (2n+1) λ/2 with n an integer; each output transducer being connected to the output port, said power device being a combiner.
摘要翻译：功率器件包括输出端口和至少一个第一声学通道和一个第二声学通路，每个声学通路包括连接到输入端口的至少一个第一输入声波换能器和连接到输出端口的输出声波换能器。每个声道还包括连接到浮动端口的浮动声波换能器; 输入传感器和输出传感器被隔开距离等于（2m + 1）λ/ 4，m为整数，λ为传播波长; 输入换能器和浮动换能器以n为整数分开等于（2n + 1）λ/ 2的距离; 每个输出换能器连接到输出端口，所述功率器件是组合器。

5. 发明授权

US10727802B2 Method for producing a batch of acoustic wave filters 有权
公开(公告)号：US10727802B2
公开(公告)日：2020-07-28
申请号：US15514525
申请日：2015-06-29
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Alexandre Reinhardt , Jean-Baptiste David
IPC分类号： H03H3/04 , H03H3/00 , H03H3/007 , H03H9/54 , H03H9/56 , H03H9/70 , H03H9/72 , H03H7/38 , H03H9/64 , H03H3/02 , H03H9/02
摘要： A method for the batch production of acoustic wave filters comprises: synthesizing N theoretical filters, each filter defined by a set of j theoretical resonator(s) having a triplet C0ij,eq, ωrij,eq and ωaij,eq, these parameters grouped into subsets; determining a reference resonator structure for each subset, naturally having a resonant frequency ωr,ref, where ωaij,eq

6. 发明申请

US20130249648A1 HBAR Resonator Comprising A Structure For Amplifying The Amplitude Of At Least One Resonance Of Said Resonator And Methods For Producing Such A Resonator 有权
标题翻译：包含用于放大所述谐振器的至少一个谐振的振幅的结构的HBAR谐振器和用于产生这样的谐振器的方法
公开(公告)号：US20130249648A1
公开(公告)日：2013-09-26
申请号：US13847432
申请日：2013-03-19
申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
发明人： Alexandre Reinhardt , Sylvain Ballandras , Francois Perruchot
IPC分类号： H03H9/17 , H03H3/04
CPC分类号： H03H9/17 , H03H3/04 , H03H9/02078 , H03H9/172 , Y10T29/42
摘要： An HBAR resonator comprises, on a substrate, a piezoelectric transducer, said transducer comprising at least one piezoelectric layer, at least two series of electrodes and exhibiting resonance frequencies Fi corresponding to wavelengths λi, characterized in that it comprises an amplification structure comprising at least one resonant cavity arranged on the substrate between said transducer and said substrate or in said substrate, this amplification structure being suitable for mechanically resonating at least one of the resonance frequencies Fi of said transducer corresponding to said wavelength λi, so as to amplify the amplitude of the electrical resonance generated at said frequency.
摘要翻译：一种HBAR谐振器在衬底上包括压电换能器，所述换能器包括至少一个压电层，至少两个串联的电极，并且具有对应于波长lambdai的谐振频率Fi，其特征在于，其包括放大结构，该放大结构包括至少一个谐振腔，其布置在所述传感器和所述衬底之间或所述衬底中的衬底上，所述放大结构适用于使所述换能器的至少一个谐振频率Fi对应于所述波长lambdai，以便放大所述振荡器的振幅在所述频率下产生的电共振。

7. 发明授权

US09705473B2 Resonant circuit with variable frequency and impedance 有权
公开(公告)号：US09705473B2
公开(公告)日：2017-07-11
申请号：US14867563
申请日：2015-09-28
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Jean-Baptiste David , Alexandre Reinhardt
IPC分类号： H03H9/54 , H03H7/38 , H03H9/70 , H03H3/007 , H03H9/56 , H03H9/72 , H03H3/02 , H03H3/04 , H03H9/02 , H03H9/64
CPC分类号： H03H3/04 , H03H3/0073 , H03H3/0076 , H03H7/38 , H03H9/542 , H03H9/545 , H03H9/568 , H03H9/64 , H03H9/6403 , H03H9/70 , H03H9/706 , H03H9/725 , H03H2003/0071 , H03H2003/027 , H03H2003/0464 , H03H2003/0471 , H03H2003/0478 , H03H2009/02165 , H03H2009/02173 , H03H2009/02196 , H03H2009/02204 , H03H2009/02496 , H03H2210/012 , H03H2210/023 , H03H2210/033
摘要： A resonant circuit comprises an input terminal and an output terminal and at least: a group of N resonators, where N≧1, the resonators having the same resonance frequency and the same antiresonance frequency; a first and a second impedance matching element having a non-zero reactance, the first element being in series with the group of resonators, and the second element being in parallel with the group of resonators, the resonant circuit comprising: first means for controlling the group of resonators, enabling the static capacitance of the group to be fixed at a first value; second control means, enabling the impedance of the first impedance matching element and that of the second element to be fixed at second values; the first and second values being such that the triplet of values composed of the static capacitance of the group, the impedance of the first element, and the impedance of the second element can be used to determine the following triplet of parameters: the characteristic impedance Zc of the assembly formed by the group, the first impedance matching element and the second matching element; the resonance frequency ωr of the assembly; the antiresonance frequency ωa of the assembly, in order to stabilize the impedance of the circuit at a chosen characteristic impedance.

8. 发明授权

US09438202B2 Acoustic structure comprising at least one resonator and at least one cointegrated capacitor in one and the same piezoelectric or ferroelectric layer 有权
标题翻译：声学结构包括至少一个谐振器和在同一压电或铁电层中的至少一个协整电容器
公开(公告)号：US09438202B2
公开(公告)日：2016-09-06
申请号：US14040163
申请日：2013-09-27
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Alexandre Reinhardt , Julie Abergel , Jean-Baptiste David
IPC分类号： H03H9/15 , H03H9/54 , H03H9/52 , H03H3/04 , H03H9/05 , H03H9/17 , H03H9/58 , H03H9/02
CPC分类号： H03H9/54 , H03H3/04 , H03H9/0542 , H03H9/175 , H03H9/542 , H03H9/585 , H03H9/589 , H03H2009/02188 , H03H2009/02204
摘要： An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.
摘要翻译：一种声学结构，包括至少一个在工作频率带内呈现至少一个谐振频率的声谐振器和集成电容器，还包括：一叠层，包括至少一个压电材料的有源层或铁电材料; 所述谐振器是频率可调谐的并且由包括所述至少一个有源层和至少两个电极的所述堆叠的第一层子集产生; 所述集成电容器由包括所述有源层和至少两个电极的第二子层子集产生; 通过层的修改来区分第一和第二层子集，以便表现出不同的谐振频率。

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