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1. 发明申请

US20020048950A1 Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes 审中-公开
标题翻译：应用气相HFACAC基化合物用于铜去污和清洗过程
公开(公告)号：US20020048950A1
公开(公告)日：2002-04-25
申请号：US09882677
申请日：2001-06-18
申请人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
发明人： Yakub Aliyu , Simon Chooi , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L021/44
CPC分类号： H01L21/02046 , C23F1/12 , H01L21/02079 , Y10S438/906
摘要： An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
摘要翻译：实现了集成电路制造中有效的铜去污方法。蒸气相中的基于有机的HFACAC去污化合物喷洒在设备或工具上发现的元素铜上，或作为溢出物喷洒，其中化合物与所有元素铜反应并形成可被冲洗掉的挥发性化合物，从而完成铜去污。

2. 发明申请

US20030192943A1 Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding 有权
标题翻译：在Cu / Cu或Cu /金属接合期间使用氢等离子体预清洁铜表面的方法
公开(公告)号：US20030192943A1
公开(公告)日：2003-10-16
申请号：US10120836
申请日：2002-04-11
申请人： Chartered Semiconductor Manufacturing Ltd.
发明人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： B23K031/00 , B23K031/02 , H01L021/44
CPC分类号： H01L24/05 , C23G5/00 , H01L21/02046 , H01L21/32136 , H01L23/4824 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05118 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4813 , H01L2224/4846 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/49111 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/05042 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
摘要： A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
摘要翻译：一种将金属丝焊接到金属焊盘上的方法，包括以下步骤。提供一种在室内具有暴露的金属接合焊盘的半导体管芯结构。接合垫具有上表面。在等离子体源室内产生氢等离子体。用氢 - 等离子体对金属接合垫进行预清洁和钝化以去除在金属焊盘上表面上形成的任何金属氧化物。然后将线接合到钝化金属接合焊盘。

3. 发明申请

US20020100794A1 Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding 有权
标题翻译：导电盖层在倒装芯片，芯棒和微金属接合中的应用方法
公开(公告)号：US20020100794A1
公开(公告)日：2002-08-01
申请号：US10099283
申请日：2002-03-15
申请人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
发明人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： B23K031/02
CPC分类号： H01L24/85 , B23K20/007 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/04953 , H01L2224/78 , H01L2924/00
摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
摘要翻译：将接合元件接合到金属接合焊盘的方法包括以下步骤。提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。该层具有上表面。在金属焊盘上形成具有预定厚度的导电盖。接合元件结合到导电盖以与金属接合焊盘形成电连接。

4. 发明申请

US20030140943A1 Apparatus and methods to clean copper contamination on wafer edge 失效
标题翻译：清洁晶圆边缘铜污染的设备和方法
公开(公告)号：US20030140943A1
公开(公告)日：2003-07-31
申请号：US10357137
申请日：2003-02-03
申请人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
发明人： Sudipto Ranendra Roy , Subhash Gupta , Simon Chooi , Xu Yi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Paul Kwok Keung Ho
IPC分类号： B08B007/00
CPC分类号： B08B1/04 , B08B3/04
摘要： A new apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.
摘要翻译：提供了可用于清洁半导体衬底的外边缘的新设备。在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到待清洁的表面。待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，由此引起表面边缘的最佳清洁作用。污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。

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