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1. 发明授权

US06524495B1 Refrigerant mixture comprising difluromethane, pentafluroethane and 1,1,1-trifluoroethane 失效
标题翻译：包含二氟甲烷，五氟乙烷和1,1,1-三氟乙烷的制冷剂混合物
公开(公告)号：US06524495B1
公开(公告)日：2003-02-25
申请号：US09710578
申请日：2000-11-09
申请人： Byung Gwon Lee , Jong Sung Lim , Kun You Park , Moon Jo Chung , Seong Joon Cho
发明人： Byung Gwon Lee , Jong Sung Lim , Kun You Park , Moon Jo Chung , Seong Joon Cho
IPC分类号： C09K504
CPC分类号： C09K5/045 , C09K2205/112 , C09K2205/12 , C09K2205/22 , C09K2205/43
摘要： A novel refrigerant composition useful as a substitute for HCFC-22, comprising a first constituent of difluoromethane (CH2F2, HFC-32); a second constituent of pentafluoroethane (CHF2CF3, HFC-125); a third constituent of 1,1,1-trifluoroethane (CH3CF3, HFC-143a); a fourth constituent selected from the group consisting of cyclopropane (C3H6, RC-270), 1,1,1,2,3,3,3-heptafluoropropane (CF3CHFCF3, HFC-227ea), 1,1,1,2,2-pentafluoropropane (CH3CF2CF3, HFC-245cb), isobutane (CH(CH3)2CH3, R-600a), octafluorocyclobutane (C4F8, RC-318), 1,1,1,2,3,3-hexafluoropropane (CHF2CHFCF3, HFC-236ea), butane (C4H10, R-600), bis(difluoromethyl)ether (CHF2OCHF2, HFE-134) and pentafluoroethylmethylether (CF3CF2OCH3, HFE-245).
摘要翻译：一种可用作HCFC-22替代物的新型制冷剂组合物，其包含二氟甲烷（CH 2 F 2，HFC-32）的第一组分; 五氟乙烷（CHF 2 CF 3，HFC-125）的第二组分; 1,1,1-三氟乙烷（CH 3 CF 3，HFC-143a）的第三组分; 选自环丙烷（C 3 H 6，RC-270），1,1,1,2,3,3,3-七氟丙烷（CF 3 CHFCF 3，HFC-227ea），1,1,1,2,2 （CH 3 CF 2 CF 3，HFC-245cb），异丁烷（CH（CH 3）2 CH 3，R-600a），八氟环丁烷（C 4 F 8，RC-318），1,1,1,2,3,3-六氟丙烷（CHF 2 CHFCF 3， 236EA），丁烷（C4H10，R-600），双（二氟甲基）醚（CHF2OCHF2，HFE-134）和五氟乙基甲基醚（CF3CF2OCH3，HFE-245）。

2. 发明授权

US06592773B2 Refrigerant mixture comprising difluromethane, pentafluroethane and 1,1,1-trifluoroethane 失效
公开(公告)号：US06592773B2
公开(公告)日：2003-07-15
申请号：US10338139
申请日：2003-01-08
申请人： Byung Gwon Lee , Jong Sung Lim , Kun You Park , Moon Jo Chung , Seong Joon Cho
发明人： Byung Gwon Lee , Jong Sung Lim , Kun You Park , Moon Jo Chung , Seong Joon Cho
IPC分类号： C09K504
CPC分类号： C09K5/045 , C09K2205/112 , C09K2205/12 , C09K2205/22 , C09K2205/43
摘要： A novel refrigerant composition useful as a substitute for HCFC-22, comprising a first constituent of difluoromethane (CH2F2, HFC-32); a second constituent of pentafluoroethane (CHF2CF3, HFC-125); a third constituent of 1,1,1-trifluoroethane (CH3CF3, HFC-143a); a fourth constituent selected from the group consisting of cyclopropane (C3H6, RC-270), 1,1,1,2,3,3,3-heptafluoropropane (CF3CHFCF3, HFC-227ea), 1,1,1,2,2-pentafluoropropane (CH3CF2CF3, HFC-245cb), isobutane (CH(CH3)2CH3, R-600a), octafluorocyclobutane (C4F8, RC-318), 1,1,1,2,3,3-hexafluoropropane (CHF2CHFCF3, HFC-236ea), butane (C4H10, R-600), bis(difluoromethyl)ether (CHF2OCHF2, HFE-134) and pentafluoroethylmethylether (CF3CF2OCH3, HFE-245).

3. 发明授权

US06231780B1 Refrigerant mixture substitute for chlorodifluoromethane 失效
标题翻译：制冷剂混合物代替氯二氟甲烷
公开(公告)号：US06231780B1
公开(公告)日：2001-05-15
申请号：US09410058
申请日：1999-10-01
申请人： Byung Gwon Lee , Jong Sung Lim , Kun You Park , Byoung Sung Ahn , Sang Deuk Lee
发明人： Byung Gwon Lee , Jong Sung Lim , Kun You Park , Byoung Sung Ahn , Sang Deuk Lee
IPC分类号： C09K504
CPC分类号： C09K5/045 , C09K2205/112 , C09K2205/12 , C09K2205/128 , C09K2205/43
摘要： A refrigerant composition useful as a substitute for chlorodifluoromethane (CHCIF2, HCFC-22). The refrigerant mixture has a first constituent of difluoromethane (CH2F2, HFC-32); a second constituent selected from perfluoropropane (C3F8, PFC-218), cyclopropane (C3H6, RC-270) and butane (C4H10, R-600); and a third constituent selected from 1,1-difluoroethane (CH3CHF2, HFC-152a), 1,1,1,2,2-pentafluoropropane (CH3CF2CF3, HFC-245cb) and bis(difluoromethyl)ether (CHF2OCHF2, HFE-134).
摘要翻译：用作氯代二氟甲烷（CHCIF2，HCFC-22）的替代物的制冷剂组合物。制冷剂混合物具有二氟甲烷的第一组分（CH 2 F 2，HFC-32）; 选自全氟丙烷（C3F8，PFC-218），环丙烷（C3H6，RC-270）和丁烷（C4H10，R-600）的第二种成分; 和选自1,1-二氟乙烷（CH 3 CHF 2，HFC-152a），1,1,1,2,2-五氟丙烷（CH 3 CF 2 CF 3，HFC-245cb）和双（二氟甲基）醚（CHF 2 OCH 2，HFE-134）。

4. 发明授权

US06231781B1 Refrigerant mixture comprising difluoromethane and 1,1,1-trifluoroethane 失效
标题翻译：包含二氟甲烷和1,1,1-三氟乙烷的制冷剂混合物
公开(公告)号：US06231781B1
公开(公告)日：2001-05-15
申请号：US09410059
申请日：1999-10-01
申请人： Byung Gwon Lee , Jong Sung Lim , Young Soo Kwon , Honggon Kim , Dong Joo Mun
发明人： Byung Gwon Lee , Jong Sung Lim , Young Soo Kwon , Honggon Kim , Dong Joo Mun
IPC分类号： C09K504
CPC分类号： C09K5/045 , C09K2205/11 , C09K2205/112 , C09K2205/12 , C09K2205/43
摘要： A refrigerant composition useful as a substitute for chlorodifluoromethane (CHClF2, HCFC-22). The refrigerant composition has a first constituent of difluoromethane (CH2F2, HFC-32); a second constituent of 1,1,1-trifluoroethane (CH3CF3; namely, HFC-143a); and a third constituent selected from cyclopropane (C3H6, RC-270), 1,1,1,2,3,3,3-heptafluoropropane (CF3CHFCF3, HFC-227ea), 1,1,1,2,2-pentafluoropropane (CH3CF2CF3, HFC-245cb), 1,1,1,2,3,3-hexafluoropropane (CHF2CHFCF3, HFC-236ea), butane (C4H10, R-600), bis(difluoromethyl)ether (CHF2OCHF2, HFE-134) and pentafluoroethylmethylether (CF3CF2OCH3, HFE-245).
摘要翻译：用作氯代二氟甲烷（CHClF 2，HCFC-22）的替代物的制冷剂组合物。制冷剂组合物具有二氟甲烷（CH 2 F 2，HFC-32）的第一组分。 1,1,1-三氟乙烷（CH 3 CF 3，即HFC-143a）的第二组分; 和选自环丙烷（C 3 H 6，RC-270），1,1,1,2,3,3,3-七氟丙烷（CF 3 CHFCF 3，HFC-227ea），1,1,1,2,2-五氟丙烷（ CH3CF2CF3，HFC-245cb），1,1,1,2,3,3-六氟丙烷（CHF2CHFCF3，HFC-236ea），丁烷（C4H10，R-600），双（二氟甲基）醚（CHF2OCHF2，HFE-134）和五氟乙基甲基醚（CF 3 CF 2 OCH 3，HFE-245）。

5. 发明授权

US08505559B2 Cleaning apparatus and high pressure cleaner for use therein 有权
标题翻译：用于其中的清洁设备和高压清洁剂
公开(公告)号：US08505559B2
公开(公告)日：2013-08-13
申请号：US12838941
申请日：2010-07-19
申请人： Gap Su Han , Ki Pung Yoo , Jong Sung Lim , Young Hoon Kwon
发明人： Gap Su Han , Ki Pung Yoo , Jong Sung Lim , Young Hoon Kwon
IPC分类号： B08B3/00
CPC分类号： H01L21/67023 , G03F7/422 , H01L21/02071 , H01L21/02101 , H01L21/31133
摘要： A cleaning apparatus in which a cleaning process is simplified, a time required for the cleaning process is reduced and which has an excellent cleaning effect, and a high pressure cleaner for use therein are provided.
摘要翻译：其中清洁过程简化的清洁装置，清洁过程所需的时间减少并具有优良的清洁效果，并且提供了一种用于其中的高压清洁器。

6. 发明授权

US08080114B2 Cleaning process 有权
标题翻译：清洁过程
公开(公告)号：US08080114B2
公开(公告)日：2011-12-20
申请号：US11499542
申请日：2006-08-04
申请人： Gap Su Han , Ki Pung Yoo , Jong Sung Lim , Young Hoon Kwon
发明人： Gap Su Han , Ki Pung Yoo , Jong Sung Lim , Young Hoon Kwon
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： G03F7/427 , B08B3/00 , B08B7/0021
摘要： Provided is a cleaning process which is simplified and in which a time required for the cleaning process is reduced and which has an excellent cleaning effect. The cleaning process comprises loading a wafer in a high pressure cleaner, injecting high-purity gaseous carbon dioxide (CO2) having low pressure into the high pressure cleaner, injecting CO2 having lower pressure than supercritical cleaning pressure into the high pressure cleaner, cleaning the wafer by injecting a supercritical homogeneous transparent phase mixture in which a cleaning additive and supercritical CO2 are mixed, into the high pressure cleaner under a supercritical cleaning pressure, rinsing the wafer by injecting a supercritical rinsing mixture in which a rinsing additive and supercritical CO2 are mixed, into the high pressure cleaner, and separating CO2 from a mixture discharged from the high pressure cleaner.
摘要翻译：提供了一种简化的清洁处理，其中清洁处理所需的时间减少并且具有优异的清洁效果。清洁过程包括将晶片装载在高压清洁器中，将具有低压清洁的高纯度二氧化碳（CO 2）注入高压清洁器中，将低于超临界清洗压力的二氧化碳注入高压清洁器中，清洗晶片通过将超临界均相透明相混合物（其中将清洁添加剂和超临界CO 2混合）注入到超临界清洗压力下的高压清洗器中，通过注入混合有漂洗添加剂和超临界CO 2的超临界冲洗混合物冲洗晶片，进入高压清洁器，并从高压清洗机排出的混合物中分离出二氧化碳。

7. 发明授权

US06716947B1 Method for preparing dimethyl dipropargylmalonate polymer containing six-membered ring structure 失效
标题翻译：制备含有六元环结构的二丙炔丙二酸二甲酯聚合物的方法
公开(公告)号：US06716947B1
公开(公告)日：2004-04-06
申请号：US10269964
申请日：2002-10-15
申请人： Youn-Woo Lee , Hyun-Nam Cho , Jong Sung Lim , Young-Jae Hur
发明人： Youn-Woo Lee , Hyun-Nam Cho , Jong Sung Lim , Young-Jae Hur
IPC分类号： C08F3800
CPC分类号： C08F138/00 , Y02P20/544
摘要： Disclosed is a method for preparing dimethyl dipropargylmalonate polymer containing exclusively six-membered ring structure by using supercritical or sub-critical carbon dioxide as a solvent with a transition metal chloride catalyst.
摘要翻译：公开了一种通过使用超临界或亚临界二氧化碳作为溶剂与过渡金属氯化物催化剂制备二元二丙炔基丙二酸二甲酯的方法，该聚合物仅含有六元环结构。

8. 发明申请

US20070169794A1 Cleaning apparatus and high pressure cleaner for use therein 审中-公开
标题翻译：用于其中的清洁设备和高压清洁剂
公开(公告)号：US20070169794A1
公开(公告)日：2007-07-26
申请号：US11499546
申请日：2006-08-04
申请人： Gap Su Han , Ki Pung Yoo , Jong Sung Lim , Young Hoon Kwon
发明人： Gap Su Han , Ki Pung Yoo , Jong Sung Lim , Young Hoon Kwon
IPC分类号： B08B3/00
CPC分类号： H01L21/67023 , G03F7/422 , H01L21/02071 , H01L21/02101 , H01L21/31133
摘要： A cleaning apparatus in which a cleaning process is simplified, a time required for the cleaning process is reduced and which has an excellent cleaning effect, and a high pressure cleaner for use therein are provided. The cleaning apparatus comprises a liquid carbon dioxide (CO2) supply source and a gaseous CO2 supply source, a high pressure pump changing CO2 supplied from the liquid CO2 supply source to CO2 having high pressure, a cleaning additive supply source and a rinsing additive supply source, a homogeneous transparent phase mixer forming a supercritical homogeneous transparent phase mixture by mixing a cleaning additive supplied from the cleaning additive supply source and supercritical CO2 supplied from the liquid CO2 supply source, or forming a supercritical rinsing mixture by mixing a rinsing additive supplied from the rinsing additive supply source and supercritical CO2 supplied from the liquid CO2 supply source, a high pressure cleaner cleaning using the supercritical homogeneous transparent phase mixture supplied from the homogeneous transparent phase mixer and performing rinsing using the supercritical rinsing mixture supplied from the homogeneous transparent phase mixer, a separator separating gaseous CO2 from a mixture discharged from the high pressure cleaner, and a CO2 condenser condensing the separated CO2.
摘要翻译：其中清洁过程简化的清洁装置，清洁过程所需的时间减少并具有优良的清洁效果，并且提供了一种用于其中的高压清洁器。清洁装置包括液体二氧化碳（CO 2/2）供应源和气态CO 2 2供应源，高压泵改变CO 2 2 < 从液体CO 2 H 2供应源供应至具有高压的CO 2，清洁添加剂供应源和漂洗添加剂供应源，形成超临界均相的均匀透明相混合物通过混合从清洁添加剂供应源供应的清洁添加剂和从液体CO 2 2供应源提供的超临界CO 2，或通过混合形成超临界漂洗混合物来形成透明相混合物从洗涤添加剂供应源和从液体CO 2 2供应源供应的超临界CO 2提供的漂洗添加剂，使用提供的超临界均相透明相混合物的高压清洁剂清洁从均匀的透明相混合器中进行漂洗从均匀的透明相混合器提供的超临界冲洗混合物，从高压清洁器排出的混合物中分离出气态CO 2的分离器和冷凝分离的CO 2 CO 2 。

9. 发明授权

US06913826B2 Biodegradable polyester polymer and method for preparing the same using compressed gas 失效
标题翻译：生物降解聚酯聚合物及其制备方法
公开(公告)号：US06913826B2
公开(公告)日：2005-07-05
申请号：US10682760
申请日：2003-10-08
申请人： Youn-Woo Lee , Soo Hyun Kim , Young Ha Kim , Jong Sung Lim , Jong Min Park , Ji Won Pack
发明人： Youn-Woo Lee , Soo Hyun Kim , Young Ha Kim , Jong Sung Lim , Jong Min Park , Ji Won Pack
IPC分类号： C08L101/16 , C08G63/08 , C08G63/64 , C08G63/688 , C08G63/78 , C08G63/81 , C08G63/82 , C08G63/88 , B32B21/02
CPC分类号： C08G63/64 , C08G63/08 , C08G63/6882 , C08G63/81 , C08G63/823 , Y02P20/544 , Y10T428/2982
摘要： In polymerizing biodegradable polymer material, a compressed gas is used as a reaction solvent for a solution-polymerization, in order to prepare biodegradable polyester homopolymer and copolymer with a high molecular weight in a fine powder form with a particle size of 0.01˜1000 μm.
摘要翻译：在聚合可生物降解的聚合物材料中，使用压缩气体作为溶液聚合的反应溶剂，以制备具有0.01〜1000μm的粒度的细粉末状的高分子量的可生物降解的聚酯均聚物和共聚物。

10. 发明授权

US08617950B2 Method of forming a capacitor and method of manufacturing a semiconductor device using the same 有权
标题翻译：电容器的形成方法及使用该电容器的半导体装置的制造方法
公开(公告)号：US08617950B2
公开(公告)日：2013-12-31
申请号：US13438151
申请日：2012-04-03
申请人： Bong Jin Kuh , Jong Cheol Lee , Yong Suk Tak , Young Sub You , Kyu Ho Cho , Jong Sung Lim
发明人： Bong Jin Kuh , Jong Cheol Lee , Yong Suk Tak , Young Sub You , Kyu Ho Cho , Jong Sung Lim
IPC分类号： H01L21/8242
CPC分类号： H01L28/86 , H01L27/10817 , H01L28/90
摘要： A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.
摘要翻译：通过在衬底上形成不是硅的氧化物（例如多晶硅或掺杂多晶硅）的硅基材料的模制层，通过模制层形成开口，形成沿着开口，随后在开口中形成下电极，然后去除模层和阻挡层图案，最后在下电极上依次形成电介质层和上电极。

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