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    • 4. 发明授权
    • Memory array using mechanical switch and method for operating thereof
    • 使用机械开关的存储器阵列及其操作方法
    • US07787276B2
    • 2010-08-31
    • US12122318
    • 2008-05-16
    • Jun-Bo YoonWeon-Wi JangJeong-Oen Lee
    • Jun-Bo YoonWeon-Wi JangJeong-Oen Lee
    • G11C5/00
    • G11C23/00G11C11/565
    • A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.
    • 一种使用根据本发明的机械开关来控制存储器阵列的方法,其中存储器阵列包括: 多个字线; 多个位线与所述多个字线相交; 连接到每个字线的栅电极; 与栅电极间隔开并连接到电容器的漏电极; 并且源电极包括:与栅电极间隔开并连接到每个位线的锚定部分; 形成凹坑的移动部件包括以下步骤:将第一电压V1施加到从多个位线中选择的位线; 将大于第一电压V1和引入电压Vpi的和的第二电压V2施加到从多个字线中选择的字线; 以及将小于擦除电压Verase和引入电压Vpi之和的电压和大于写入电压V write和引入电压Vpi之间的电压的电压施加到从多个字线未被选择的字线 。
    • 5. 发明申请
    • MEMORY ARRAY USING MECHANICAL SWITCH AND METHOD FOR OPERATING THEREOF
    • 使用机械开关的存储器阵列及其操作方法
    • US20090021972A1
    • 2009-01-22
    • US12122318
    • 2008-05-16
    • Jun-Bo YoonJeong-Oen LeeWeon-Wi Jang
    • Jun-Bo YoonJeong-Oen LeeWeon-Wi Jang
    • G11C5/00G11C11/24G11C7/00
    • G11C23/00G11C11/565
    • A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.
    • 一种使用根据本发明的机械开关来控制存储器阵列的方法,其中存储器阵列包括: 多个字线; 多个位线与所述多个字线相交; 连接到每个字线的栅电极; 与栅电极间隔开并连接到电容器的漏电极; 并且源电极包括:与栅电极间隔开并连接到每个位线的锚定部分; 形成凹坑的移动部件包括以下步骤:将第一电压V1施加到从多个位线中选择的位线; 将大于第一电压V1和引入电压Vpi的和的第二电压V2施加到从多个字线中选择的字线; 以及将小于擦除电压Verase和引入电压Vpi之和的电压和大于写入电压V write和引入电压Vpi之间的电压的电压施加到从多个字线未被选择的字线 。
    • 6. 发明申请
    • LIGHT GUIDE PLATE AND BACKLIGHT UNIT
    • 光导板和背光单元
    • US20130188392A1
    • 2013-07-25
    • US13512750
    • 2010-11-30
    • Jun-Bo YoonJoo-Hyung LeeJeong-Ho Yeon
    • Jun-Bo YoonJoo-Hyung LeeJeong-Ho Yeon
    • F21V8/00
    • G02B6/0011G02B6/0036G02B6/0038
    • Disclosed are a light guide plate and a backlight unit. The backlight unit according to the present invention includes: a light guide plate; a light source disposed on one side of the light guide plate; and a reflective plate disposed under the light guide plate, wherein, in the cross section of one side of the light guide plate, the light guide plate includes a plurality of unit slits including a first slit and a second slit, wherein the first slit and the second slit are inclined from a top surface toward the inside of the light guide plate with respect to a vertical direction of the top surface, and wherein the first slit and the second slit are symmetrical to each other with respect to the middle portion of the unit slit.
    • 公开了导光板和背光单元。 根据本发明的背光单元包括:导光板; 设置在所述导光板一侧的光源; 以及反射板,其设置在所述导光板的下方,其中,在所述导光板的一侧的截面中,所述导光板包括包括第一狭缝和第二狭缝的多个单位狭缝,其中,所述第一狭缝和 第二狭缝相对于顶表面的垂直方向从导光板的顶表面向内侧倾斜,并且其中第一狭缝和第二狭缝相对于第二狭缝的中间部分彼此对称 单位狭缝
    • 9. 发明授权
    • Micromirror actuator
    • 微镜执行器
    • US06775050B2
    • 2004-08-10
    • US10437290
    • 2003-05-14
    • Euisik YoonJun-Bo YoonHyung-Kew LeeJi-Hyuk Kim
    • Euisik YoonJun-Bo YoonHyung-Kew LeeJi-Hyuk Kim
    • G02B2600
    • G02B26/0841
    • Disclosed is a micromirror actuator that includes: a substrate provided with an insulating layer formed thereon; two lower columns spaced from each other by a designated distance, and formed on the insulating layer; a first torsion bar extending over upper surfaces of the lower columns; a second torsion bar formed so that the first and second torsion bars are orthogonal to each other; four electrodes, each disposed in four areas formed by the orthogonal crossing of the first and second torsion bars, formed on the insulating layer; two upper columns formed on an upper surface of the second torsion bar so that the upper surfaces of the upper columns are located at higher positions than the upper surfaces of the electrodes; and a micromirror located on the upper surfaces of the upper columns so that the micromirror is supported by the upper columns.
    • 公开了一种微镜致动器,其包括:在其上形成有绝缘层的基板; 两个下列彼此间隔开指定距离,并形成在绝缘层上; 延伸在下列的上表面上的第一扭杆; 形成为使得第一和第二扭杆彼此正交的第二扭杆; 四个电极,每个设置在由绝缘层上形成的第一和第二扭杆的正交交叉形成的四个区域中; 两个上柱形成在第二扭杆的上表面上,使得上列的上表面位于比电极的上表面更高的位置; 以及位于上列的上表面上的微镜,使得微反射镜由上列支撑。