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1. 发明授权

US06762090B2 Method for fabricating a capacitor 失效
标题翻译：制造电容器的方法
公开(公告)号：US06762090B2
公开(公告)日：2004-07-13
申请号：US10067951
申请日：2002-02-05
申请人： Byoung Kwon Ahn , Sung Hoon Park , Joon Ho Kim
发明人： Byoung Kwon Ahn , Sung Hoon Park , Joon Ho Kim
IPC分类号： H01L218242
CPC分类号： H01L28/40 , H01L21/76895 , H01L28/91
摘要： A method for fabricating capacitor capable of simplifying formation processes of ruthenium (Ru) layer for storage node electrode formation of capacitor comprises the steps of: forming a first insulating layer having a first opening exposing a predetermined region on a substrate; forming a conductive plug filled within the first opening; forming a second insulating layer having a second opening exposing the conductive plug on the first insulating layer; forming a conductive layer covering the second opening by sequentially performing PECVD and LPCVD processes on the second insulating layer; exposing the second insulating layer by performing etch back on the conductive layer; forming a storage node electrode of the capacitor by removing the second insulating layer; and forming a dielectric layer to cover the storage node electrode; and forming a plate electrode. In an alternative embodiment, a thermal treatment under an N2 gas supply is performed after the step of forming the conductive layer.
摘要翻译：一种用于制造电容器的方法，其能够简化用于存储节点电极形成电容器的钌（Ru）层的形成过程，包括以下步骤：形成第一绝缘层，其具有暴露基板上的预定区域的第一开口; 形成填充在所述第一开口内的导电塞; 形成具有第二开口的第二绝缘层，所述第二开口将所述导电插塞暴露在所述第一绝缘层上; 通过在所述第二绝缘层上依次执行PECVD和LPCVD工艺来形成覆盖所述第二开口的导电层; 通过在导电层上进行回蚀来暴露第二绝缘层; 通过去除所述第二绝缘层形成所述电容器的存储节点电极; 以及形成覆盖所述存储节点电极的电介质层; 并形成平板电极。在替代实施例中，在形成导电层的步骤之后进行在N 2气体供应下的热处理。

2. 发明授权

US06893913B2 Method for forming capacitor of semiconductor device 失效
标题翻译：形成半导体器件电容器的方法
公开(公告)号：US06893913B2
公开(公告)日：2005-05-17
申请号：US10603306
申请日：2003-06-25
申请人： Byoung Kwon Ahn , Sung Hoon Park
发明人： Byoung Kwon Ahn , Sung Hoon Park
IPC分类号： H01L27/04 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242
CPC分类号： H01L27/10855 , H01L21/3142 , H01L21/31637 , H01L28/90
摘要： Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a bit line. A contact plug to be in contact with the substrate is formed within the interlayer insulating film. A storage electrode is formed on the interlayer insulating film in such a manner that the storage electrode comes in contact with the contact plug. A dielectric film composed of a single composite film of Ta2O5(X)Y2O3(1−X) is also formed on the storage electrode according to ALD (Atomic Layer Deposition) technology. A diffusion barrier film is deposited on the dielectric film, and a plate electrode is formed on the diffusion barrier film. The present invention can provide a capacitor having sufficient capacitance necessary for a stable device operation by applying the Ta2O5(X)Y2O3(1−X) single composite film to the dielectric film.
摘要翻译：公开了一种形成半导体器件的电容器的方法。形成方法包括在形成有位线的半导体衬底上形成层间绝缘膜的步骤。在层间绝缘膜内形成与基板接触的接触塞。在层间绝缘膜上形成存储电极，使得存储电极与接触插塞接触。由Ta 2 O 5（X）Y 2 O 3（X）Y 2 O 3（X）的单一复合膜构成的电介质膜（ 1-X）也根据ALD（原子层沉积）技术形成在存储电极上。在电介质膜上沉积扩散阻挡膜，在扩散阻挡膜上形成平板电极。本发明可以提供一种电容器，其具有通过施加Ta 2 O 5（X）Y 2 O 2来稳定的器件操作所需的足够电容 3（1-X）单层复合膜到电介质膜。

3. 发明授权

US06653198B2 Method for fabricating capacitor in semiconductor device and capacitor fabricated thereby 失效
标题翻译：用于制造半导体器件中的电容器的方法和由其制造的电容器
公开(公告)号：US06653198B2
公开(公告)日：2003-11-25
申请号：US10331017
申请日：2002-12-27
申请人： Byoung Kwon Ahn , Joon Ho Kim
发明人： Byoung Kwon Ahn , Joon Ho Kim
IPC分类号： H01L2120
CPC分类号： H01L28/65 , H01L21/28568 , H01L21/31604 , H01L28/75 , H01L28/91
摘要： A capacitor in a semiconductor device and fabricating method therefor are disclosed, in which the capacitor in a semiconductor device comprises: a semiconductor substrate, a first Ru film formed on the semiconductor substrate, a Y2O3 film formed on the first Ru film, a TiON film formed on the Y2O3 film, and a second Ru film formed on the TiON film; and the method for fabricating a capacitor in a semiconductor device comprising the steps of: providing a semiconductor substrate, forming a first Ru film on the semiconductor substrate, forming a Y2O3 film on the first Ru film, forming a TiON film on the Y2O3 film, and forming a second Ru film on the TiON film.
摘要翻译：公开了半导体器件中的电容器及其制造方法，其中半导体器件中的电容器包括：半导体衬底，形成在半导体衬底上的第一Ru膜，形成在第一Ru膜上的Y2O3膜，TiON膜形成在Y 2 O 3膜上，形成在TiON膜上的第二Ru膜; 以及在半导体器件中制造电容器的方法，包括以下步骤：提供半导体衬底，在半导体衬底上形成第一Ru膜，在第一Ru膜上形成Y2O3膜，在Y2O3膜上形成TiON膜，并在TiON膜上形成第二Ru膜。

4. 发明授权

US06597029B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US06597029B2
公开(公告)日：2003-07-22
申请号：US09880056
申请日：2001-06-14
申请人： Nam Kyeong Kim , Ki Seon Park , Dong Su Park , Byoung Kwon Ahn , Seung Kyu Han
发明人： Nam Kyeong Kim , Ki Seon Park , Dong Su Park , Byoung Kwon Ahn , Seung Kyu Han
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L21/3143 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.
摘要翻译：在形成非易失性半导体存储器件的电容器的方法中，在半导体衬底上形成TaON胶层，在TaON胶层上形成下电极。然后在下电极上形成铁电体膜，在铁电体膜上形成上电极。

5. 发明授权

US06656788B2 Method for manufacturing a capacitor for semiconductor devices 失效
标题翻译：半导体器件用电容器的制造方法
公开(公告)号：US06656788B2
公开(公告)日：2003-12-02
申请号：US09751843
申请日：2001-01-02
申请人： Dong Su Park , Byoung Kwon Ahn
发明人： Dong Su Park , Byoung Kwon Ahn
IPC分类号： H01L218242
CPC分类号： H01L21/02183 , C23C16/308 , H01L21/0228 , H01L21/02329 , H01L21/0234 , H01L21/02356 , H01L21/31604 , H01L27/1085 , H01L28/40 , H01L28/91
摘要： A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.
摘要翻译：通过在半导体器件上形成下部结构，在半导体器件的下部结构上形成下部电极，通过在下部电极的表面上沉积非晶形的TaON膜来形成电介质薄膜，制造半导体器件的电容器，并且即使在不供给Ta源气体的情况下也以单脉冲方式供给Ta源气体并连续地供给反应气体，并且在电介质薄膜的上部形成上电极。

6. 发明授权

US06815225B2 Method for forming capacitor of nonvolatile semiconductor memory device 有权
标题翻译：用于形成非易失性半导体存储器件电容器的方法
公开(公告)号：US06815225B2
公开(公告)日：2004-11-09
申请号：US10452494
申请日：2003-06-03
申请人： Nam Kyeong Kim , Ki Seon Park , Dong Su Park , Byoung Kwon Ahn , Seung Kyu Han
发明人： Nam Kyeong Kim , Ki Seon Park , Dong Su Park , Byoung Kwon Ahn , Seung Kyu Han
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/3143 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

7. 发明授权

US06680228B2 Capacitor in semiconductor device 失效
标题翻译：半导体器件中的电容器
公开(公告)号：US06680228B2
公开(公告)日：2004-01-20
申请号：US10268964
申请日：2002-10-11
申请人： Byoung Kwon Ahn , Dong Soo Park
发明人： Byoung Kwon Ahn , Dong Soo Park
IPC分类号： H01L218242
CPC分类号： H01L21/02183 , H01L21/02178 , H01L21/022 , H01L21/02274 , H01L21/02304 , H01L21/02337 , H01L21/3145 , H01L21/3162 , H01L28/56
摘要： In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.
摘要翻译：在半导体器件中的电容器中，在半导体衬底上的下电极上形成氮化膜，在氮化物膜上形成TaON膜。在TaON膜上形成Al 2 O 3膜，在Al 2 O 3膜上形成上电极。

8. 发明授权

US06479345B2 Method for manufacturing capacitor in semiconductor device and the capacitor 有权
标题翻译：在半导体器件和电容器中制造电容器的方法
公开(公告)号：US06479345B2
公开(公告)日：2002-11-12
申请号：US09879998
申请日：2001-06-14
申请人： Byoung Kwon Ahn , Dong Soo Park
发明人： Byoung Kwon Ahn , Dong Soo Park
IPC分类号： H01L218242
CPC分类号： H01L21/02183 , H01L21/02178 , H01L21/022 , H01L21/02274 , H01L21/02304 , H01L21/02337 , H01L21/3145 , H01L21/3162 , H01L28/56
摘要： In the method for manufacturing a capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.
摘要翻译：在半导体装置中制造电容器的方法中，在半导体衬底上的下电极上形成氮化物膜，在氮化物膜上形成TaON膜。在TaON膜上形成Al 2 O 3膜，在Al 2 O 3膜上形成上电极。

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