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1. 发明授权

US6100826A Symbol decoding method and apparatus 失效
标题翻译：符号解码方法及装置
公开(公告)号：US6100826A
公开(公告)日：2000-08-08
申请号：US54402
申请日：1998-04-03
申请人： Byeungwoo Jeon , Kuen-Pyo Hong , Jae-Nam Noh , Jong-Won Lee
发明人： Byeungwoo Jeon , Kuen-Pyo Hong , Jae-Nam Noh , Jong-Won Lee
IPC分类号： H03M7/46 , H03M7/48 , H04N1/41 , H04N19/129 , H04N19/134 , H04N19/176 , H04N19/42 , H04N19/423 , H04N19/44 , H04N19/46 , H04N19/60 , H04N19/625 , H04N19/70 , H04N19/91 , H03M7/40
CPC分类号： H03M7/46 , H04N19/13 , H04N19/60 , H04N19/91
摘要： A symbol decoding apparatus run-level-decodes corresponding symbol data using the same scan pattern data as used for run-level-encoding. A symbol separator separates the received run-level-encoded symbol data into run data and level data. An address outputter selects a particular scan pattern using the scan pattern data associated with the symbol data, and selects a scan address for storing the level data among the scan addresses corresponding to the selected scan pattern using the separated run data. A data store stores the level data supplied from the symbol separator at the storage position designated by the selected scan address. Thus, the run-level-encoded symbols are run-level-decoded based on the scan pattern used for run-level encoding and stored in a form appropriate for use in a downstream unit.
摘要翻译：符号解码装置使用与用于运行级别编码的相同的扫描模式数据运行级别对相应的符号数据进行解码。符号分隔符将接收到的运行级别编码的符号数据分成运行数据和级别数据。地址输出器使用与符号数据相关联的扫描图案数据来选择特定的扫描图案，并且使用分离的运行数据来选择用于存储与所选择的扫描图形相对应的扫描地址之间的电平数据的扫描地址。数据存储器将从符号分离器提供的电平数据存储在由所选扫描地址指定的存储位置处。因此，运行级编码符号基于用于运行级编码的扫描模式进行运行级解码，并以适合于在下游单元中使用的形式存储。

2. 发明授权

US09061904B2 Cellulose sheathed nanotube fiber 有权
标题翻译：纤维素护套纳米管纤维
公开(公告)号：US09061904B2
公开(公告)日：2015-06-23
申请号：US13157758
申请日：2011-06-10
申请人： Minoru Miyauchi , Jianjun Miao , Trevor J. Simmons , Jong-Won Lee , Thomas V. Doherty , Jonathan S. Dordick , Robert J. Linhardt
发明人： Minoru Miyauchi , Jianjun Miao , Trevor J. Simmons , Jong-Won Lee , Thomas V. Doherty , Jonathan S. Dordick , Robert J. Linhardt
IPC分类号： B23B9/04 , B29C47/04 , D02G3/00 , B82Y30/00 , D01D5/00 , D01F1/09 , D01F8/02 , H01G9/02 , H01G11/52
CPC分类号： B82Y30/00 , D01D5/0007 , D01F1/09 , D01F2/02 , D01F8/02 , H01G9/02 , H01G11/52 , Y02E60/13 , Y10T428/2918
摘要： Embodiments of the invention provide a cellulose-sheathed carbon nanotube fiber. One aspect of the invention provides a sheathed nanotube fiber comprising: a carbon nanotube fiber; and a cellulose sheath extending co-axially along at least a first portion of a length of the carbon nanotube fiber. Another aspect of the invention provides a method of forming a sheathed carbon nanotube fiber, the method comprising: co-electrospinning a carbon nanotube fiber gel core within a cellulose solution sheath.
摘要翻译：本发明的实施方案提供了一种纤维素包覆的碳纳米管纤维。本发明的一个方面提供一种护套纳米管纤维，其包含：碳纳米管纤维; 以及沿所述碳纳米管纤维的长度的至少第一部分同轴延伸的纤维素护套。本发明的另一方面提供了一种形成护套碳纳米管纤维的方法，所述方法包括：在纤维素溶液鞘内共同静电纺丝碳纳米管纤维凝胶芯。

3. 发明申请

US20140063888A1 MEMORY ARRAY PLANE SELECT AND METHODS 有权
标题翻译：内存阵列选择和方法
公开(公告)号：US20140063888A1
公开(公告)日：2014-03-06
申请号：US13597520
申请日：2012-08-29
申请人： Jong-Won Lee , Gianpaolo Spadini
发明人： Jong-Won Lee , Gianpaolo Spadini
IPC分类号： G11C5/06 , H01L21/8239 , G11C11/00
CPC分类号： G11C13/0023 , G11C5/025 , G11C8/12 , G11C11/1653 , G11C11/1659 , G11C13/0002 , G11C13/0004 , G11C13/003 , G11C13/0069 , G11C2213/71
摘要： Memory arrays and methods of forming the same are provided. An example memory array can include at least one plane having a plurality of memory cells arranged in a matrix and a plurality of plane selection devices. Groups of the plurality of memory cells are communicatively coupled to a respective one of a plurality of plane selection devices. A decode logic having elements is formed in a substrate material and communicatively coupled to the plurality of plane selection devices. The plurality of memory cells and the plurality of plane selection devices are not formed in the substrate material.
摘要翻译：提供了存储器阵列及其形成方法。示例性存储器阵列可以包括具有以矩阵形式布置的多个存储单元和多个平面选择装置的至少一个平面。多个存储器单元的组通信地耦合到多个平面选择装置中的相应一个。具有元件的解码逻辑形成在衬底材料中并且通信地耦合到多个平面选择装置。多个存储单元和多个平面选择装置不形成在基板材料中。

4. 发明授权

US08298088B2 Method and system for operating online 8-direction battle game using personal computer 有权
标题翻译：使用个人电脑进行在线8方向战斗游戏的方法和系统
公开(公告)号：US08298088B2
公开(公告)日：2012-10-30
申请号：US12760722
申请日：2010-04-15
申请人： Jong-Won Lee
发明人： Jong-Won Lee
IPC分类号： A63F13/12
CPC分类号： A63F13/422 , A63F13/833 , A63F2300/407 , A63F2300/6054 , A63F2300/8029
摘要： A method and system for operating an online 8-direction battle game using a personal computer (PC) are provided. The system operates the 8-direction battle game through interfacing with a game providing module to provide the 8-direction battle game in an online mode with a PC. The system includes an auto-targeting unit to automatically target an object to perform a battle against a character designated by a user of the PC in the 8-direction battle game, the object being within a predetermined range from a position of the character, and a game controller to automatically control a direction in which the character faces the object based on a distance between the object and the character.
摘要翻译：提供了一种使用个人计算机（PC）操作在线8方向战斗游戏的方法和系统。该系统通过与游戏提供模块的接口操作8方向战斗游戏，以PC在线模式提供8方向战斗游戏。该系统包括自动定位单元，用于自动对象，以在与8个方向的战斗游戏中的PC的用户指定的角色进行对抗，该对象位于从角色位置的预定范围内，以及游戏控制器，用于基于对象和角色之间的距离来自动控制角色面向对象的方向。

5. 发明授权

US08199600B2 Voltage generator for peripheral circuit 有权
标题翻译：外围电路用电压发生器
公开(公告)号：US08199600B2
公开(公告)日：2012-06-12
申请号：US11529421
申请日：2006-09-27
申请人： Ho-Uk Song , Jong-Won Lee
发明人： Ho-Uk Song , Jong-Won Lee
IPC分类号： G11C5/14
CPC分类号： G11C5/14
摘要： A voltage generator for a peripheral circuit, the voltage generator includes: a voltage supplier supplying a peripheral circuit voltage having a voltage level maintained at a reference voltage level, the peripheral circuit voltage outputted in response to a driving signal; and a voltage level compensator increasing the voltage level of the peripheral circuit voltage in response to a column path command.
摘要翻译：一种用于外围电路的电压发生器，所述电压发生器包括：提供具有保持在参考电压电平的电压电平的外围电路电压的电压供给器，响应于驱动信号输出的外围电路电压; 以及电压电平补偿器，其响应于列路径命令增加外围电路电压的电压电平。

6. 发明申请

US20110305903A1 SHEATHED NANOTUBE FIBER AND METHOD OF FORMING SAME 有权
公开(公告)号：US20110305903A1
公开(公告)日：2011-12-15
申请号：US13157758
申请日：2011-06-10
申请人： Minoru Miyauchi , Jianjun Miao , Trevor J. Simmons , Jong-Won Lee , Thomas V. Doherty , Jonathan S. Dordick , Robert J. Linhardt
发明人： Minoru Miyauchi , Jianjun Miao , Trevor J. Simmons , Jong-Won Lee , Thomas V. Doherty , Jonathan S. Dordick , Robert J. Linhardt
IPC分类号： B32B9/04 , B29C47/04 , D02G3/00 , B82Y30/00
CPC分类号： B82Y30/00 , D01D5/0007 , D01F1/09 , D01F2/02 , D01F8/02 , H01G9/02 , H01G11/52 , Y02E60/13 , Y10T428/2918
摘要： Embodiments of the invention provide a cellulose-sheathed carbon nanotube fiber. One aspect of the invention provides a sheathed nanotube fiber comprising: a carbon nanotube fiber; and a cellulose sheath extending co-axially along at least a first portion of a length of the carbon nanotube fiber. Another aspect of the invention provides a method of forming a sheathed carbon nanotube fiber, the method comprising: co-electrospinning a carbon nanotube fiber gel core within a cellulose solution sheath.
摘要翻译：本发明的实施方案提供了一种纤维素包覆的碳纳米管纤维。本发明的一个方面提供一种护套纳米管纤维，其包含：碳纳米管纤维; 以及沿所述碳纳米管纤维的长度的至少第一部分同轴延伸的纤维素护套。本发明的另一方面提供了一种形成护套碳纳米管纤维的方法，所述方法包括：在纤维素溶液鞘内共同静电纺丝碳纳米管纤维凝胶芯。

7. 发明申请

US20100015729A1 METHODS OF FORMING A THIN FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THE SAME 失效
标题翻译：形成薄膜层的方法和制造包括其的半导体器件的方法
公开(公告)号：US20100015729A1
公开(公告)日：2010-01-21
申请号：US12503440
申请日：2009-07-15
申请人： Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
发明人： Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
IPC分类号： H01L21/28
CPC分类号： H01L27/11507 , H01L21/3105 , H01L21/31053 , H01L28/55
摘要： In methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device, a preliminary ferroelectric layer is formed on a substrate by depositing a metal oxide including lead, zirconium and titanium. The surface of the preliminary ferroelectric layer is polished using a slurry composition including an acrylic acid polymer, abrasive particles, and water to form a thin ferroelectric layer on the substrate. The slurry composition may reduce a polishing rate of the preliminary ferroelectric layer such that removal of a bulk portion of the preliminary ferroelectric layer may be suppressed and the surface roughness of the preliminary ferroelectric layer may be improved.
摘要翻译：在形成薄铁电体层的方法和制造半导体器件的方法中，通过沉积包括铅，锆和钛的金属氧化物，在衬底上形成初步铁电层。使用包括丙烯酸聚合物，磨料颗粒和水的浆料组合物对预制铁电层的表面进行抛光，以在基材上形成薄铁电层。浆料组合物可以降低预备铁电体层的抛光速率，从而可以抑制初级铁电层的体积部分的去除，并且可以提高预铁电层的表面粗糙度。

8. 发明申请

US20070264793A1 Methods of Manufacturing Semiconductor Memory Devices with Unit Cells Having Charge Trapping Layers 失效
标题翻译：制造具有电荷陷阱层的单元电池的半导体存储器件的方法
公开(公告)号：US20070264793A1
公开(公告)日：2007-11-15
申请号：US11746761
申请日：2007-05-10
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwam Shim , Jong-Won Lee
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwam Shim , Jong-Won Lee
IPC分类号： H01L21/76
CPC分类号： H01L27/115 , H01L21/76229 , H01L27/11568
摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.
摘要翻译：在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。形成从衬底突出的隔离层以填充沟槽。在基板上形成第一层之后，在第一层上形成预备的第二层图案。预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。在初步第二层和隔离层上形成第三层。在第三层上形成第四层。部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

9. 发明授权

US07260006B2 Bitline driving circuit in semiconductor memory device and driving method thereof 失效
标题翻译：半导体存储器件中的位线驱动电路及其驱动方法
公开(公告)号：US07260006B2
公开(公告)日：2007-08-21
申请号：US11311273
申请日：2005-12-20
申请人： Jong-Won Lee
发明人： Jong-Won Lee
IPC分类号： G11C7/00
CPC分类号： G11C11/4094 , G11C7/12
摘要： There is provided a bitline driving circuit and its driving method for minimizing a leakage current flowing between a wordline and a bitline in a power down mode and a self-refresh mode. The bitline driving circuit for reducing a leakage current in a semiconductor memory device includes a main driving block for precharging a bitline pair connected to a sense amplifier with a same voltage level, controlled by a main bitline equalizing signal; a sub driving block for equalizing a voltage level of a bitline pair connected to a cell array voltage in a precharge mode, controlled by a sub bitline equalizing signal; and a bitline isolation block for electrically disconnecting the main driving block and the sub driving block, controlled by a bitline isolation signal.
摘要翻译：提供了一种位线驱动电路及其驱动方法，用于在断电模式和自刷新模式下最小化在字线和位线之间流动的漏电流。用于减少半导体存储器件中的漏电流的位线驱动电路包括：主驱动块，用于对连接到具有相同电压电平的读出放大器的位线对进行预充电，由主位线均衡信号控制; 子驱动块，用于在由预定的充电模式中连接到单元阵列电压的位线对的电压电平进行均衡，该预充电模式由子位线均衡信号控制; 以及位线隔离块，用于电断开主驱动块和副驱动块，由位线隔离信号控制。

10. 发明申请

US20070166980A1 Chemical vapor deposition chamber for depositing titanium silicon nitride films for forming phase change memory devices 审中-公开
标题翻译：用于沉积用于形成相变存储器件的氮化钛膜的化学气相沉积室
公开(公告)号：US20070166980A1
公开(公告)日：2007-07-19
申请号：US11312232
申请日：2005-12-19
申请人： Jong-Won Lee , Roger Hamamjy
发明人： Jong-Won Lee , Roger Hamamjy
IPC分类号： H01L21/44
CPC分类号： C23C16/34 , C23C16/4482 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16 , H01L45/1683
摘要： Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times. Two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled.
摘要翻译：有机金属前体可用于形成用作相变存储器的加热器的氮化钛膜。通过使用TDMAT和TrDMASi的组合，例如在金属有机化学气相沉积室中，可以在合理的沉积时间内实现相对高百分比的硅。可以使用两个单独的起泡器将气态的两种有机金属化合物进料到沉积室，以便容易地控制前体的相对比例。

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