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1. 发明申请

US20080173995A1 Memory card and manufacturing method of the same 审中-公开
标题翻译：存储卡和制造方法相同
公开(公告)号：US20080173995A1
公开(公告)日：2008-07-24
申请号：US11898456
申请日：2007-09-12
申请人： Bunshi Kuratomi , Fukumi Shimizu , Michiaki Sugiyama , Atsushi Fujishima , Tamaki Wada
发明人： Bunshi Kuratomi , Fukumi Shimizu , Michiaki Sugiyama , Atsushi Fujishima , Tamaki Wada
IPC分类号： H01L23/48 , H01L21/56
CPC分类号： H01L23/3121 , H01L21/566 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L25/18 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2225/0651 , H01L2225/06562 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H05K1/117 , H05K3/0052 , H05K3/284 , H05K2201/09145 , H05K2201/10159 , H05K2203/1316 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： There is a need to provide a large capacity memory card for a portable communication device. A memory card 1 includes: a wiring board 2 mainly composed of a glass epoxy resin; multiple semiconductor chips (3C and 3F) mounted on a main surface of the memory card 1; and a mold resin 4 for encapsulating the wiring board 2 and the semiconductor chips (3C and 3F). The mold resin 4 is made of a thermosetting epoxy resin containing quartz filler. A back surface of the wiring board 2 is not covered with the mold resin 4 and is exposed to a back surface of the memory card 1. The back surface of the wiring board 2 is used to form multiple external connection terminals 7 electrically connected to the semiconductor chips (3C and 3F) . When the memory card 1 is attached to a card slot of a mobile phone, the external connection terminals 7 contact with a connector terminal contained in the card slot. This makes it possible to exchange signals between the memory card 1 and the mobile phone or to supply the power.
摘要翻译：需要提供用于便携式通信设备的大容量存储卡。存储卡1包括：主要由玻璃环氧树脂构成的布线板2; 安装在存储卡1的主表面上的多个半导体芯片（3C和3F）以及用于封装布线板2和半导体芯片（3C和3F）的模制树脂4。模制树脂4由含有石英填料的热固性环氧树脂制成。配线基板2的背面未被模制树脂4覆盖，并暴露于存储卡1的背面。布线板2的背面用于形成与半导体芯片（3C和3F）电连接的多个外部连接端子7。当存储卡1附接到移动电话的卡槽时，外部连接端子7与包含在卡槽中的连接器端子接触。这使得可以在存储卡1和移动电话之间交换信号或者提供电力。

2. 发明授权

US08476113B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08476113B2
公开(公告)日：2013-07-02
申请号：US13160653
申请日：2011-06-15
申请人： Bunshi Kuratomi , Fukumi Shimizu
发明人： Bunshi Kuratomi , Fukumi Shimizu
IPC分类号： H01L21/00
CPC分类号： H01L21/565 , H01L21/561 , H01L23/3107 , H01L23/49541 , H01L23/49548 , H01L24/04 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48245 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2224/85 , H01L2924/00012 , H01L2924/00
摘要： When chip-scale molding system is employed for QFP, the number of semiconductor devices available from a leadframe decreases because cavities each requires a runner portion. This problem can be overcome by employing MAP system, but use of a laminate tape increases the production cost. In through mold system, each cavity needs an ejector pin, which however makes it difficult to place a support pillar. The present application provides a manufacturing method of a semiconductor device by filling, while sandwiching a leadframe between mold dies having a matrix-state cavity group in which cavity columns obtained by linking mold cavities in series via a through gate have been placed in rows, a sealing resin in the cavities. In this method, the matrix-state cavity group has, at the cavity corner portions thereof, a support pillar having a cross-section striding over all the cavities adjacent to the cavity corner portions when viewed planarly.
摘要翻译：当使用芯片级模制系统进行QFP时，引线框可用的半导体器件的数量减少，因为每个腔都需要一个流道部分。这个问题可以通过使用MAP系统来克服，但是使用层压带增加了生产成本。在通过模具系统中，每个腔体都需要一个顶针，这使得难以放置支柱。本申请提供了一种半导体器件的制造方法，该半导体器件通过在具有矩阵状空穴群的模具之间夹入引线框而填充，其中通过贯穿栅极串联连接模腔获得的空腔列已经排列成行，将树脂密封在空腔中。在这种方法中，矩阵状空腔群在其腔角部分处具有支撑柱，当平面观察时，该支柱具有跨越与空腔拐角部分相邻的所有空腔的横截面。

3. 发明申请

US20080057626A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080057626A1
公开(公告)日：2008-03-06
申请号：US11926331
申请日：2007-10-29
申请人： Bunshi KURATOMI , Takafumi Nishita , Fukumi Shimizu
发明人： Bunshi KURATOMI , Takafumi Nishita , Fukumi Shimizu
IPC分类号： H01L21/00
CPC分类号： H01L21/566 , H01L23/3121 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00014 , H01L2224/83 , H01L2924/00 , H01L2924/00012
摘要： For molding semiconductor chips on a wiring substrate matrix with a sealing resin, the wiring substrate matrix is placed on a lower die cavity block of a lower die, and, thereafter, an upper die is brought down, whereby an outer peripheral portion of a cavity of the upper die comes into abutment against an outer peripheral portion of a main surface of the wiring substrate matrix, causing the substrate matrix to be deformed a sufficient extent to prevent resin leakage. Thereafter, block pins provided on the upper die push down the lower die cavity block. Thus, when clamping the wiring substrate matrix using both upper and lower dies, it is possible to suppress or prevent the application of excessive pressure to the wiring substrate matrix and to suppress or prevent deformation or cracking caused by crushing of the wiring substrate matrix. Consequently, the semiconductor device manufacturing yield can be improved.
摘要翻译：为了在具有密封树脂的布线基板矩阵上模制半导体芯片，将布线基板矩阵放置在下模的下模腔模块上，然后将上模降低，从而使空腔的外周部分上模与基板矩阵的主表面的外周部邻接，使基板基体发生足够的变形，防止树脂的泄漏。此后，设置在上模上的挡块销向下压下模腔。因此，当使用上下模具夹紧布线基板矩阵时，可以抑制或防止对布线基板矩阵施加过大的压力，并且抑制或防止由于布线基板矩阵的破碎而引起的变形或破裂。因此，可以提高半导体器件的制造成品率。

4. 发明申请

US20050106786A1 Method of manufacturing a semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050106786A1
公开(公告)日：2005-05-19
申请号：US10985945
申请日：2004-11-12
申请人： Bunshi Kuratomi , Fukumi Shimizu , Takafumi Nishita
发明人： Bunshi Kuratomi , Fukumi Shimizu , Takafumi Nishita
IPC分类号： B29C39/10 , B29L31/34 , H01L21/56 , H01L23/31 , H01L21/44 , H01L21/48 , H01L21/50 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/561 , H01L21/565 , H01L23/3121 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The delivery times of semiconductor devices are shortened. The upper die of a mold is provided with an opening which runs from the outside surface of the upper die to the cavity. A movable cavity piece is installed by fitting the movable cavity piece into the opening so that the movable cavity piece can be moved up and down. In the molding process, the height of the lower face of the movable cavity piece is adjusted in accordance with the thickness of a blanket sealing body, and then sealing resin is injected into the cavity. Thus, a change in the thickness of the blanket sealing body can be easily coped with in a short time. After molding, the movable cavity piece is moved up and separated from the blanket sealing body, and thereby mold release is carried out.
摘要翻译：半导体器件的传送时间缩短。模具的上模设置有从上模的外表面延伸到空腔的开口。通过将可动空腔件装配到开口中来安装可移动的空腔件，使得可移动的空腔件能够上下移动。在成型过程中，根据橡皮布密封体的厚度调节可动空腔件的下表面的高度，然后将树脂注入空腔中。因此，可以容易地在短时间内应对橡皮布密封体的厚度变化。在模制之后，可动空腔件向上移动并与橡皮布密封体分离，从而进行脱模。

5. 发明授权

US07144755B2 Fabrication method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07144755B2
公开(公告)日：2006-12-05
申请号：US10921156
申请日：2004-08-19
申请人： Bunshi Kuratomi , Fukumi Shimizu , Kenichi Imura , Katsushige Namiki , Fumio Murakami
发明人： Bunshi Kuratomi , Fukumi Shimizu , Kenichi Imura , Katsushige Namiki , Fumio Murakami
IPC分类号： H01L21/44
CPC分类号： H01L21/565 , H01L24/97 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48471 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554
摘要： At the time of performing resin molding for a matrix frame in the fabrication of semiconductor integrated circuit devices, a predetermined amount of air is fed into each of first cavities in a first row and second cavities in a second row, the first and second cavities being formed in a matrix arrangement in a lower mold of a molding die, so as to pressurize the interiors of the cavities, and a sealing resin is charged into the cavities, while the pressure therein is regulated in such a manner that the charging speeds of the sealing resin become equal in all of the cavities, whereby it is possible to stabilize the quality of the product being obtained.
摘要翻译：在制造半导体集成电路器件时对矩阵框架进行树脂模制时，将预定量的空气馈送到第一排中的第一空腔和第二排中的第二空腔中的每一个中，第一和第二空腔为在成型模具的下模具中以矩阵形式形成，以便对空腔的内部进行加压，并且将密封树脂装入空腔中，同时其中的压力以这样的方式被调节：密封树脂在所有空腔中变得相等，由此可以稳定所获得的产品的质量。

6. 发明申请

US20050070047A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050070047A1
公开(公告)日：2005-03-31
申请号：US10947261
申请日：2004-09-23
申请人： Bunshi Kuratomi , Takafumi Nishita , Fukumi Shimizu
发明人： Bunshi Kuratomi , Takafumi Nishita , Fukumi Shimizu
IPC分类号： B29C45/14 , B29C45/26 , H01L21/44 , H01L21/56 , H01L23/31
CPC分类号： H01L21/566 , H01L23/3121 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00014 , H01L2224/83 , H01L2924/00 , H01L2924/00012
摘要： For molding semiconductor chips on a wiring substrate matrix with a sealing resin, the wiring substrate matrix is placed on a lower die cavity block of a lower die, and, thereafter, an upper die is brought down, whereby an outer peripheral portion of a cavity of the upper die comes into abutment against an outer peripheral portion of a main surface of the wiring substrate matrix, causing the substrate matrix to be deformed a sufficient extent to prevent resin leakage. Thereafter, block pins provided on the upper die push down the lower die cavity block. Thus, when clamping the wiring substrate matrix using both upper and lower dies, it is possible to suppress or prevent the application of excessive pressure to the wiring substrate matrix and to suppress or prevent deformation or cracking caused by crushing of the wiring substrate matrix. Consequently, the semiconductor device manufacturing yield can be improved.
摘要翻译：为了在具有密封树脂的布线基板矩阵上模制半导体芯片，将布线基板矩阵放置在下模的下模腔模块上，然后将上模降低，从而使空腔的外周部分上模与基板矩阵的主表面的外周部邻接，使基板基体发生足够的变形，防止树脂的泄漏。此后，设置在上模上的挡块销向下压下模腔。因此，当使用上下模具夹紧布线基板矩阵时，可以抑制或防止对布线基板矩阵施加过大的压力，并且抑制或防止由于布线基板矩阵的破碎而引起的变形或破裂。因此，可以提高半导体器件的制造成品率。

7. 发明申请

US20090160084A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090160084A1
公开(公告)日：2009-06-25
申请号：US12158289
申请日：2006-12-28
申请人： Bunshi Kuratomi , Fukumi Shimizu , Takafumi Nishita
发明人： Bunshi Kuratomi , Fukumi Shimizu , Takafumi Nishita
IPC分类号： B29C45/00
CPC分类号： H01L21/565 , H01L23/49541 , H01L2924/0002 , H01L2924/00
摘要： A lead frame is equipped between an upper die with which a gate port and an air vent part are not formed in a cavity part 12a and a lower die in which a gate port 15f is formed in one place of a corner of a cavity part 15a and an air vent part is not formed. After decompressing the inside of the die formed of the cavity parts 12a and 15a by clamping the upper die and the lower die with the clamp pressure of intermediate pressure, mold resin is allowed to flow in the die. Residual air is exhausted while allowing mold resin to flow in the die formed of the cavity parts 12a and 15a by once clamping the upper die and the lower die with low-pressure clamp pressure. Then, the mold resin which filled up in the die formed of the cavity parts 12a and 15a is formed by clamping the upper die and the lower die with high-pressure clamp pressure.
摘要翻译：在空腔部分12a中没有形成门口和排气部的上模具之间设有引线框架，在空腔部分15a的角部的一个位置形成有栅极端口15f的下模具并且不形成排气部。在通过用中间压力的夹持压力夹紧上模和下模对由空腔部分12a和15a形成的模具的内部进行减压之后，使模制树脂在模具中流动。残留的空气被排出，同时通过在低压夹紧压力下一次夹紧上模和下模，同时允许模制树脂在由空腔部分12a和15a形成的模具中流动。然后，通过用高压夹持压力夹紧上模和下模，形成填充在由空腔部分12a和15a形成的模具中的模制树脂。

8. 发明授权

US06797542B2 Fabrication method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US06797542B2
公开(公告)日：2004-09-28
申请号：US10364503
申请日：2003-02-12
申请人： Bunshi Kuratomi , Fukumi Shimizu , Kenichi Imura , Katsushige Namiki , Fumio Murakami
发明人： Bunshi Kuratomi , Fukumi Shimizu , Kenichi Imura , Katsushige Namiki , Fumio Murakami
IPC分类号： H01L2144
CPC分类号： H01L21/565 , H01L24/97 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48471 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/4554
摘要： At the time of performing resin molding for a matrix frame in the fabrication of semiconductor integrated circuit devices, a predetermined amount of air is fed into each of first cavities in a first row and second cavities in a second row, the first and second cavities being formed in a matrix arrangement in a lower mold of a molding die, so as to pressurize the interiors of the cavities, and a sealing resin is charged into the cavities, while the pressure therein is regulated in such a manner that the charging speeds of the sealing resin become equal in all of the cavities, whereby it is possible to stabilize the quality of the product being obtained.
摘要翻译：在制造半导体集成电路器件时对矩阵框架进行树脂模制时，将预定量的空气馈送到第一排中的第一空腔和第二排中的第二空腔中的每一个中，第一和第二空腔为在成型模具的下模具中以矩阵形式形成，以便对空腔的内部进行加压，并且将密封树脂装入空腔中，同时其中的压力以这样的方式被调节：密封树脂在所有空腔中变得相等，由此可以稳定所获得的产品的质量。

9. 发明授权

US08117742B2 Fabrication method of semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US08117742B2
公开(公告)日：2012-02-21
申请号：US12729102
申请日：2010-03-22
申请人： Bunshi Kuratomi , Fukumi Shimizu
发明人： Bunshi Kuratomi , Fukumi Shimizu
IPC分类号： H05K3/30
CPC分类号： H01L25/50 , H01L21/565 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48465 , H01L2224/48471 , H01L2224/73265 , H01L2225/06562 , H01L2225/06582 , H01L2924/01057 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced.
摘要翻译：半导体集成电路器件的制造方法使用设置有多个通气口和可动销的模具，该模具形成为使得可动销在其远端突出到通风口中的槽。通过将模具夹紧，使得在夹持模具时将可动销的顶端压靠在多空腔板上的状态，可以填充树脂，同时通过形成在远端的凹槽使空腔内的空气泄漏通过将各个通风口的深度设定为固定值，而与多腔板的厚度不规则性无关。因此，可以防止树脂在空腔中的填充不充分，树脂泄漏或焊接不良，从而可以提高产品的成品率。

10. 发明授权

US07377031B2 Fabrication method of semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07377031B2
公开(公告)日：2008-05-27
申请号：US11320888
申请日：2005-12-30
申请人： Bunshi Kuratomi , Fukumi Shimizu
发明人： Bunshi Kuratomi , Fukumi Shimizu
IPC分类号： H05K3/30 , H01L21/82
CPC分类号： H01L25/50 , H01L21/565 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48465 , H01L2224/48471 , H01L2224/73265 , H01L2225/06562 , H01L2225/06582 , H01L2924/01057 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced.
摘要翻译：半导体集成电路器件的制造方法使用设置有多个通气口和可动销的模具，该模具形成为使得可动销在其远端突出到通风口中的槽。通过将模具夹紧，使得在夹持模具时将可动销的顶端压靠在多空腔板上的状态，可以填充树脂，同时通过形成在远端的凹槽使空腔内的空气泄漏通过将各个通风口的深度设定为固定值，而与多腔板的厚度不规则性无关。因此，可以防止树脂在空腔中的填充不充分，树脂泄漏或焊接不良，从而可以提高产品的成品率。

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