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1. 发明授权

US07176496B2 Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same 有权
标题翻译：用于液晶显示器的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07176496B2
公开(公告)日：2007-02-13
申请号：US11080612
申请日：2005-03-16
申请人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Hao , Jong-Soo Yoon , Dong-Gyu Kim
发明人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Hao , Jong-Soo Yoon , Dong-Gyu Kim
IPC分类号： H01L29/04 , H01L29/15 , H01L31/36
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/136236 , G02F2001/136272 , G02F2001/13629 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , Y10S438/949
摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.
摘要翻译：包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘，以及在基板上的栅电极。此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。依次形成栅极绝缘层，半导体层和欧姆接触层。导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

2. 发明授权

US06524876B1 Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same 有权
标题翻译：用于液晶显示器的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US06524876B1
公开(公告)日：2003-02-25
申请号：US09545891
申请日：2000-04-07
申请人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
发明人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
IPC分类号： H01L2100
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/136236 , G02F2001/136272 , G02F2001/13629 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , Y10S438/949
摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.
摘要翻译：包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘，以及在基板上的栅电极。此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。依次形成栅极绝缘层，半导体层和欧姆接触层。导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

3. 发明申请

US20050170592A1 Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same 有权
标题翻译：用于液晶显示器的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20050170592A1
公开(公告)日：2005-08-04
申请号：US11080612
申请日：2005-03-16
申请人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
发明人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L31/0376
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/136236 , G02F2001/136272 , G02F2001/13629 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , Y10S438/949
摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.
摘要翻译：包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘，以及在基板上的栅电极。此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。依次形成栅极绝缘层，半导体层和欧姆接触层。导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

4. 发明授权

US06887742B2 Method for manufacturing a thin film transistor array panel for a liquid crystal display 有权
标题翻译：制造液晶显示器用薄膜晶体管阵列面板的方法
公开(公告)号：US06887742B2
公开(公告)日：2005-05-03
申请号：US10302927
申请日：2002-11-25
申请人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
发明人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L21/00 , H01L21/337
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/136236 , G02F2001/136272 , G02F2001/13629 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , Y10S438/949
摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.
摘要翻译：包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积并图案化以形成包括栅极线，栅极焊盘，以及在基板上的栅电极。此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。依次形成栅极绝缘层，半导体层和欧姆接触层。导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

5. 发明授权

US06849873B2 Thin film transistor array panel for a liquid crystal display 有权
标题翻译：用于液晶显示器的薄膜晶体管阵列面板
公开(公告)号：US06849873B2
公开(公告)日：2005-02-01
申请号：US10303016
申请日：2002-11-25
申请人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
发明人： Bum-Ki Baek , Mun-Pyo Hong , Jang-Soo Kim , Sung-Wook Huh , Jong-Soo Yoon , Dong-Gyu Kim
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/04
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/136236 , G02F2001/136272 , G02F2001/13629 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/66765 , Y10S438/949
摘要： In liquid crystal display device having a multi-layer conductive layer, such conductive layer is formed using a photoresist pattern having different thicknesses depending on the position. Upper layer of the gate pad is removed using an etch mask of the photoresist pattern of different thickness. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire. Finally passivation layer is formed and an indium tin oxide layer is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad.
摘要翻译：在具有多层导电层的液晶显示装置中，使用根据位置具有不同厚度的光致抗蚀剂图案形成这种导电层。使用不同厚度的光致抗蚀剂图案的蚀刻掩模去除栅极焊盘的上层。依次形成栅极绝缘层，半导体层和欧姆接触层。导电材料被沉积并图案化以形成数据线。最后，形成钝化层，并且沉积和图案化氧化铟锡层以形成像素电极，冗余栅极焊盘和冗余数据焊盘。

6. 发明授权

US07098480B2 Thin film transistor array panel and a method for manufacturing the same 有权
公开(公告)号：US07098480B2
公开(公告)日：2006-08-29
申请号：US10273298
申请日：2002-10-18
申请人： Dong-Gyu Kim , Jong-Soo Yoon
发明人： Dong-Gyu Kim , Jong-Soo Yoon
IPC分类号： H01L29/00
CPC分类号： G02F1/13458 , G02F1/136227 , G02F2001/136222 , H01L27/12 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , H01L29/4908 , H01L29/66765 , H01L29/78633
摘要： Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.

7. 发明授权

US07943939B2 Thin film transistor array panel and methods for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07943939B2
公开(公告)日：2011-05-17
申请号：US12834798
申请日：2010-07-12
申请人： Dong-Gyu Kim , Jong-Soo Yoon
发明人： Dong-Gyu Kim , Jong-Soo Yoon
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： G02F1/13458 , G02F1/136227 , G02F2001/136222 , H01L27/12 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , H01L29/4908 , H01L29/66765 , H01L29/78633
摘要： Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.
摘要翻译：公开了一种用于制造液晶显示器的简化方法。在基板上形成包括栅极线，栅极焊盘和栅电极的栅极线。依次沉积栅极绝缘层，半导体层和欧姆接触层，并在其上涂覆光致抗蚀剂层。光致抗蚀剂层通过掩模曝光并显影以形成光致抗蚀剂图案。此时，位于源电极和漏电极之间的光致抗蚀剂图案的第一部分比位于数据线上的第二部分薄，并且光致抗蚀剂层在其它部分被完全去除。通过控制照射光的量或通过回流工艺形成薄的部分来制造薄部分，并且通过使用具有狭缝的掩模来控制光量，小的图案小于曝光装置的分辨率，或部分透明的层。接下来，通过湿蚀刻或干蚀刻去除导体层的暴露部分，从而暴露下面的欧姆接触层。然后通过干蚀刻与光致抗蚀剂层的第一部分一起去除暴露的欧姆接触层和下面的半导体层。通过灰化除去光致抗蚀剂层的残留物。通过去除沟道处的导体层的部分和下面的欧姆接触层图案来分离源极/漏极。然后，除去光致抗蚀剂层的第二部分，并形成红色，绿色和蓝色滤色器，像素电极，冗余栅极焊盘和冗余数据焊盘。

8. 发明授权

US07393726B2 Thin film transistor array panel and methods for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07393726B2
公开(公告)日：2008-07-01
申请号：US11378714
申请日：2006-03-16
申请人： Dong-Gyu Kim , Jong-Soo Yoon
发明人： Dong-Gyu Kim , Jong-Soo Yoon
IPC分类号： H01L21/00 , H01L29/04
CPC分类号： G02F1/13458 , G02F1/136227 , G02F2001/136222 , H01L27/12 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , H01L29/4908 , H01L29/66765 , H01L29/78633
摘要： Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.
摘要翻译：公开了一种用于制造液晶显示器的简化方法。在基板上形成包括栅极线，栅极焊盘和栅电极的栅极线。依次沉积栅极绝缘层，半导体层和欧姆接触层，并在其上涂覆光致抗蚀剂层。光致抗蚀剂层通过掩模曝光并显影以形成光致抗蚀剂图案。此时，位于源电极和漏电极之间的光致抗蚀剂图案的第一部分比位于数据线上的第二部分薄，并且光致抗蚀剂层在其它部分被完全去除。通过控制照射光的量或通过回流工艺形成薄的部分来制造薄部分，并且通过使用具有狭缝的掩模来控制光量，小的图案小于曝光装置的分辨率，或部分透明的层。接下来，通过湿蚀刻或干蚀刻去除导体层的暴露部分，从而暴露下面的欧姆接触层。然后通过干蚀刻与光致抗蚀剂层的第一部分一起去除暴露的欧姆接触层和下面的半导体层。通过灰化除去光致抗蚀剂层的残留物。通过去除沟道处的导体层的部分和下面的欧姆接触层图案来分离源极/漏极。然后，除去光致抗蚀剂层的第二部分，并形成红色，绿色和蓝色滤色器，像素电极，冗余栅极焊盘和冗余数据焊盘。

9. 发明授权

US06759281B1 Method of making a display switch having a contact hole through a passivation layer and a color filter 有权
标题翻译：制造具有通过钝化层和滤色器的接触孔的显示开关的方法
公开(公告)号：US06759281B1
公开(公告)日：2004-07-06
申请号：US09558647
申请日：2000-04-26
申请人： Dong-Gyu Kim , Jong-Soo Yoon
发明人： Dong-Gyu Kim , Jong-Soo Yoon
IPC分类号： H01L2900
CPC分类号： G02F1/13458 , G02F1/136227 , G02F2001/136222 , H01L27/12 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , H01L29/4908 , H01L29/66765 , H01L29/78633
摘要： Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.
摘要翻译：公开了一种用于制造液晶显示器的简化方法。在基板上形成包括栅极线，栅极焊盘和栅电极的栅极线。依次沉积栅极绝缘层，半导体层和欧姆接触层，并在其上涂覆光致抗蚀剂层。光致抗蚀剂层通过掩模曝光并显影以形成光致抗蚀剂图案。此时，位于源电极和漏电极之间的光致抗蚀剂图案的第一部分比位于数据线上的第二部分薄，并且光致抗蚀剂层在其它部分被完全去除。通过控制照射光的量或通过回流工艺形成薄的部分来制造薄部分，并且通过使用具有狭缝的掩模来控制光量，小的图案小于曝光装置的分辨率，或部分透明的层。接下来，通过湿蚀刻或干蚀刻去除导体层的暴露部分，从而暴露下面的欧姆接触层。然后通过干蚀刻与光致抗蚀剂层的第一部分一起去除暴露的欧姆接触层和下面的半导体层。通过灰化除去光致抗蚀剂层的残留物。通过去除沟道处的导体层的部分和下面的欧姆接触层图案来分离源极/漏极。然后，除去光致抗蚀剂层的第二部分，并形成红色，绿色和蓝色滤色器，像素电极，冗余栅极焊盘和冗余数据焊盘。

10. 发明申请

US20100295050A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100295050A1
公开(公告)日：2010-11-25
申请号：US12834798
申请日：2010-07-12
申请人： Dong-Gyu Kim , Jong-Soo Yoon
发明人： Dong-Gyu Kim , Jong-Soo Yoon
IPC分类号： H01L33/08
CPC分类号： G02F1/13458 , G02F1/136227 , G02F2001/136222 , H01L27/12 , H01L27/124 , H01L27/1285 , H01L27/1288 , H01L27/1292 , H01L29/4908 , H01L29/66765 , H01L29/78633
摘要： Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.
摘要翻译：公开了一种用于制造液晶显示器的简化方法。在基板上形成包括栅极线，栅极焊盘和栅电极的栅极线。依次沉积栅极绝缘层，半导体层和欧姆接触层，并在其上涂覆光致抗蚀剂层。光致抗蚀剂层通过掩模曝光并显影以形成光致抗蚀剂图案。此时，位于源电极和漏电极之间的光致抗蚀剂图案的第一部分比位于数据线上的第二部分薄，并且光致抗蚀剂层在其它部分被完全去除。通过控制照射光的量或通过回流工艺形成薄的部分来制造薄部分，并且通过使用具有狭缝的掩模来控制光量，小的图案小于曝光装置的分辨率，或部分透明的层。接下来，通过湿蚀刻或干蚀刻去除导体层的暴露部分，从而暴露下面的欧姆接触层。然后通过干蚀刻与光致抗蚀剂层的第一部分一起去除暴露的欧姆接触层和下面的半导体层。通过灰化除去光致抗蚀剂层的残留物。通过去除沟道处的导体层的部分和下面的欧姆接触层图案来分离源极/漏极。然后，除去光致抗蚀剂层的第二部分，并形成红色，绿色和蓝色滤色器，像素电极，冗余栅极焊盘和冗余数据焊盘。

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