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1. 发明授权

US07179670B2 Flip-chip light emitting diode device without sub-mount 有权
标题翻译：倒装芯片发光二极管器件无需安装
公开(公告)号：US07179670B2
公开(公告)日：2007-02-20
申请号：US10794935
申请日：2004-03-05
申请人： Bryan S. Shelton , Sebastien Libon , Hari S. Venugopalan , Ivan Eliashevich , Stanton E. Weaver, Jr. , Chen-Lun Hsing Chen , Thomas F. Soules , Steven LeBoeuf , Stephen Arthur
发明人： Bryan S. Shelton , Sebastien Libon , Hari S. Venugopalan , Ivan Eliashevich , Stanton E. Weaver, Jr. , Chen-Lun Hsing Chen , Thomas F. Soules , Steven LeBoeuf , Stephen Arthur
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L24/81 , H01L33/38 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04026 , H01L2224/05005 , H01L2224/05023 , H01L2224/05027 , H01L2224/0508 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05564 , H01L2224/05568 , H01L2224/05611 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/3003 , H01L2224/73103 , H01L2224/73203 , H01L2224/83193 , H01L2224/83203 , H01L2224/83205 , H01L2224/8321 , H01L2224/8323 , H01L2224/83815 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).
摘要翻译：发光二极管（10）具有背面和前侧，具有至少一个n型电极（14）和设置在其上的至少一个p型电极（12），其限定最小电极间隔（d < ）。接合焊盘层（50）包括至少一个n型接合焊盘（64）和至少一个限定最小接合焊盘间隔（p>焊盘）的p型接合焊盘（62）大于最小电极分离（d _{电极）。插入在发光二极管（10）的前侧和接合焊盘层（50）之间的至少一个扇形层（30）包括穿过电介质层的通孔（34,54）的多个导电路径以在所述至少一个n型电极（14）和所述至少一个n型焊盘（64）之间以及所述至少一个p型电极（12）和所述至少一个p型电极（12）之间提供电连通一个p型接合焊盘（62）。}

2. 发明申请

US20070114557A1 Flip-chip light emitting diode device without sub-mount 审中-公开
公开(公告)号：US20070114557A1
公开(公告)日：2007-05-24
申请号：US11654165
申请日：2007-01-16
申请人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
发明人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L24/81 , H01L33/38 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04026 , H01L2224/05005 , H01L2224/05023 , H01L2224/05027 , H01L2224/0508 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05564 , H01L2224/05568 , H01L2224/05611 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/3003 , H01L2224/73103 , H01L2224/73203 , H01L2224/83193 , H01L2224/83203 , H01L2224/83205 , H01L2224/8321 , H01L2224/8323 , H01L2224/83815 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).

3. 发明申请

US20050194605A1 Flip-chip light emitting diode device without sub-mount 有权
标题翻译：倒装芯片发光二极管器件无需安装
公开(公告)号：US20050194605A1
公开(公告)日：2005-09-08
申请号：US10794935
申请日：2004-03-05
申请人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
发明人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
IPC分类号： H01L27/15 , H01L33/38 , H01L33/62
CPC分类号： H01L33/62 , H01L24/81 , H01L33/38 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04026 , H01L2224/05005 , H01L2224/05023 , H01L2224/05027 , H01L2224/0508 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05564 , H01L2224/05568 , H01L2224/05611 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/3003 , H01L2224/73103 , H01L2224/73203 , H01L2224/83193 , H01L2224/83203 , H01L2224/83205 , H01L2224/8321 , H01L2224/8323 , H01L2224/83815 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).
摘要翻译：发光二极管（10）具有背面和前侧，具有至少一个n型电极（14）和设置在其上的至少一个p型电极（12），其限定最小电极间隔（d < ）。接合焊盘层（50）包括至少一个n型接合焊盘（64）和至少一个限定最小接合焊盘间隔（p>焊盘）的p型接合焊盘（62）大于最小电极分离（d _{电极）。插入在发光二极管（10）的前侧和接合焊盘层（50）之间的至少一个扇形层（30）包括穿过电介质层的通孔（34,54）的多个导电路径以在所述至少一个n型电极（14）和所述至少一个n型焊盘（64）之间以及所述至少一个p型电极（12）和所述至少一个p型电极（12）之间提供电连通一个p型接合焊盘（62）。}

4. 发明授权

US06964877B2 LED power package 有权
标题翻译： LED电源包装
公开(公告)号：US06964877B2
公开(公告)日：2005-11-15
申请号：US10832969
申请日：2004-04-27
申请人： Chen-Lun Hsing Chen , Stanton Weaver, Jr. , Ivan Eliashevich , Sebastien Libon , Mehmet Arik , David Shaddock
发明人： Chen-Lun Hsing Chen , Stanton Weaver, Jr. , Ivan Eliashevich , Sebastien Libon , Mehmet Arik , David Shaddock
IPC分类号： H01L21/00 , H01L31/02 , H01L33/48 , H01L33/62
CPC分类号： H01L33/486 , H01L24/97 , H01L33/62 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/05644 , H01L2224/05155 , H01L2224/05166
摘要： Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (24). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (10). A metal is applied to the drilled openings to produce a plurality of via arrays (12). The LED dice (24) are flip-chip bonded onto a frontside (16) of the sub-mount wafer (10). The p-type and n-type contacts of each flip-chip bonded LED (24) electrically communicate with a solderable backside (18) of the sub-mount wafer (10) through a via array (12). A thermal conduction path (10, 12) is provided for thermally conducting heat from the flip-chip bonded LED dice (24) to the solderable backside (18) of the sub-mount wafer (10). Subsequent to the flip-chip bonding, the sub-mount wafer (10) is separated to produce the surface mount LED packages.
摘要翻译：表面贴装发光二极管（LED）封装各自包含发光二极管（LED）裸片（24）。将多个开口阵列钻入电绝缘子安装晶片（10）中。金属被施加到钻孔以产生多个通孔阵列（12）。 LED芯片（24）被倒装芯片接合到子安装晶片（10）的前侧（16）上。每个倒装芯片接合的LED（24）的p型和n型触点通过通孔阵列（12）与辅助安装晶片（10）的可焊接背面（18）电连通。提供了一种导热路径（10,12），用于将来自倒装芯片接合的LED骰子（24）的热量传导到子安装晶片（10）的可焊接背面（18）。在倒装芯片接合之后，子安装晶片（10）被分离以产生表面贴装LED封装。

5. 发明授权

US07064356B2 Flip chip light emitting diode with micromesas and a conductive mesh 失效
标题翻译：倒装芯片发光二极管，具有微电极和导电网
公开(公告)号：US07064356B2
公开(公告)日：2006-06-20
申请号：US10826980
申请日：2004-04-16
申请人： Emil P. Stefanov , Hari S. Venugopalan , Bryan S. Shelton , Ivan Eliashevich
发明人： Emil P. Stefanov , Hari S. Venugopalan , Bryan S. Shelton , Ivan Eliashevich
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20
摘要： A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).
摘要翻译：倒装芯片发光二极管（12）包括具有设置在其上的基极半导体层（40）的透光衬底（10）。导电网（18）设置在基底半导体层（40）上并与其导电接触。发光微镜（30）设置在导电网（18）的开口（20）中。每个发光微镜（30）具有与第一导电类型相反的第二导电类型的最上层（46）。第一导电型电极（14）设置在基底半导体层（40）上并与导电网（18）电连通。绝缘层（60）设置在导电网（18）之上。第二导电型电极层（24）设置在绝缘层（60）和发光微孔（30）之上。绝缘层（60）将第二导电型电极层（24）与导电网（18）绝缘。

6. 发明授权

US07285801B2 LED with series-connected monolithically integrated mesas 有权
标题翻译： LED串联单片集成台面
公开(公告)号：US07285801B2
公开(公告)日：2007-10-23
申请号：US10817603
申请日：2004-04-02
申请人： Ivan Eliashevich , Chris Bohler , Bryan S. Shelton , Hari S. Venugopalan , Xiang Gao
发明人： Ivan Eliashevich , Chris Bohler , Bryan S. Shelton , Hari S. Venugopalan , Xiang Gao
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting semiconductor device die (10, 110, 210, 310) includes an electrically insulating substrate (12, 112). First and second spatially separated electrodes (60, 62, 260, 262, 360, 362) are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas (30, 130, 130′, 230, 330) are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections (50, 150, 250, 350) are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction.
摘要翻译：发光半导体器件管芯（10,110,210,310）包括电绝缘衬底（12,112）。第一和第二空间分离的电极（60,62,260,262,360,362）设置在电绝缘基板上。第一和第二电极限定从第一电极指向第二电极的电流流动方向。多个发光二极管台面（30,130,130'，230,330）设置在第一和第二空间分离的电极之间的衬底上。在相邻的发光二极管台面之间的基板上设置电气串联互连（50,150,250,350）。每个串联互连在电流流动方向上在相邻台面之间承载电流。

7. 发明授权

US07842547B2 Laser lift-off of sapphire from a nitride flip-chip 有权
标题翻译：激光剥离蓝宝石从氮化物倒装芯片
公开(公告)号：US07842547B2
公开(公告)日：2010-11-30
申请号：US10584434
申请日：2004-12-21
申请人： Bryan S. Shelton , Sebastien Libon , Ivan Eliashevich
发明人： Bryan S. Shelton , Sebastien Libon , Ivan Eliashevich
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/48091 , H01L2924/10253 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.
摘要翻译：在制造倒装芯片发光二极管器件的方法中，将外延层沉积在蓝宝石生长衬底上以产生外延晶片。在外延晶片上制造多个发光二极管器件。切割外延晶片以产生器件裸片。器件芯片被倒装芯片结合到安装座。倒装芯片接合包括通过将器件管芯的至少一个电极接合到安装件的至少一个接合焊盘来将器件裸片固定到安装座。在倒装芯片接合之后，通过施加激光来去除器件裸片的生长衬底。

8. 发明申请

US20080113460A1 Laser Lift-Off of Sapphire From a Nitride Flip-Chip 有权
标题翻译：激光剥离蓝宝石从氮化物倒装芯片
公开(公告)号：US20080113460A1
公开(公告)日：2008-05-15
申请号：US10584434
申请日：2004-12-21
申请人： Bryan S. Shelton , Sebastien Libon , Ivan Eliashevich
发明人： Bryan S. Shelton , Sebastien Libon , Ivan Eliashevich
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/48091 , H01L2924/10253 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.
摘要翻译：在制造倒装芯片发光二极管器件的方法中，将外延层沉积在蓝宝石生长衬底上以产生外延晶片。在外延晶片上制造多个发光二极管器件。切割外延晶片以产生器件裸片。器件芯片被倒装芯片结合到安装座。倒装芯片接合包括通过将器件管芯的至少一个电极接合到安装件的至少一个接合焊盘来将器件裸片固定到安装座。在倒装芯片接合之后，通过施加激光来去除器件裸片的生长衬底。

9. 发明申请

US20100181584A1 LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION 审中-公开
标题翻译：激光提升与改进的光提取
公开(公告)号：US20100181584A1
公开(公告)日：2010-07-22
申请号：US12304533
申请日：2006-07-11
申请人： Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
发明人： Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
IPC分类号： H01L33/00 , H01L31/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
摘要翻译：发光器件包括限定发光pn结的半导体层的叠层和设置在半导体层堆叠上的电介质层。电介质层的折射率基本上与半导体层叠层的折射率相匹配。电介质层具有远离半导体层堆叠的主表面。远端主表面包括图案化，粗糙化或纹理化，其被配置为促进在半导体层堆叠中产生的光的提取。

10. 发明授权

US06661167B2 LED devices 失效
公开(公告)号：US06661167B2
公开(公告)日：2003-12-09
申请号：US10063052
申请日：2002-03-14
申请人： Ivan Eliashevich , Mathew L. Sommers , Stanton E. Weaver, Jr.
发明人： Ivan Eliashevich , Mathew L. Sommers , Stanton E. Weaver, Jr.
IPC分类号： F21V500
CPC分类号： H01L33/54 , H01L2224/05571 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2224/05599
摘要： A light emitting diode (LED) device (A) and processes for its manufacture are provided. The LED device (A) includes a light emitting chip or die (10) and an encapsulant (22) surrounding the same. The encapsulant (22) is substantially spherical in shape, and the die (10) is preferably located at a substantial center of the encapsulant (22). An electrically conductive path extends from the chip or die (10) to a periphery of the encapsulant (22) such that the chip/die (10) can be selectively energized to produce light by applying electricity to the electrically conductive path at the periphery of the encapsulant (22). Preferably, the encapsulant (22) is chosen to have an index of refraction as close as possible to the higher of an index of refraction of the die's semiconductor material and an index of refraction of the die's substrate (12).

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