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1. 发明授权

US5337144A Etch rate monitor using collimated light and method of using same 失效
标题翻译：蚀刻速率监视器使用准直光和使用方法
公开(公告)号：US5337144A
公开(公告)日：1994-08-09
申请号：US880464
申请日：1992-05-05
申请人： Bruno Strul , Richard de Geus , Peter Ebbing
发明人： Bruno Strul , Richard de Geus , Peter Ebbing
IPC分类号： G01B11/06 , G01B11/22 , G01B9/02
CPC分类号： G01B11/0683 , G01B11/22
摘要： An etch rate monitor for use with semiconductor wafer etching processes includes a source of light of normal incidence to the wafer surface through a window in the etching chamber. In a first embodiment, a Fresnel or positive lens is used to collect some of the diffraction orders caused by the repetitive patterns on the wafer surface which merge from the window. In alternate embodiments, a concave spherical mirror and/or a photodetector system are used to collect the diffraction orders. A collimating lens applies these diffraction orders of normal incidence to interference filters which reject plasma and ambient light and pass the diffraction orders to a photodetector to monitor etch rate as a function of the cycle period between interference minima or maxima caused by the difference in path length between the etched and not etched surfaces of the wafer.
摘要翻译：用于半导体晶片蚀刻工艺的蚀刻速率监视器包括通过蚀刻室中的窗口正常入射到晶片表面的光源。在第一实施例中，菲涅尔或正透镜用于收集由从窗口合并的晶片表面上的重复图案引起的一些衍射级。在替代实施例中，使用凹球面镜和/或光电检测器系统来收集衍射级。准直透镜将这些正常入射的衍射级应用于干涉滤光器，其干扰等离子体和环境光，并将衍射级传递到光电检测器，以将蚀刻速率作为由路径长度差导致的干扰最小值或最大值之间的周期周期的函数在晶片的蚀刻和未蚀刻的表面之间。

2. 发明授权

US5147828A Method of handling magnetic semiconductor wafers 失效
标题翻译：处理磁性半导体晶片的方法
公开(公告)号：US5147828A
公开(公告)日：1992-09-15
申请号：US450779
申请日：1989-12-14
申请人： Peter Ebbing , Jack Ford
发明人： Peter Ebbing , Jack Ford
IPC分类号： H01L21/687
CPC分类号： H01L21/68721 , Y10S414/141 , Y10T279/23 , Y10T29/41
摘要： A semiconductor wafer is provided with magnetic material about the periphery for magnetically clamping the wafer on a seating gasket at the processing station. The seating gasket is annular for peripherally supporting the wafer. An electro-magnet establishes a peripheral station magnetic field which attracts the wafer magnetic material to form the clamp. The station magnetic field may by reversed to levitate the wafer onto and off of the seating gasket.
摘要翻译：半导体晶片周围设置有磁性材料，用于将晶片磁化地夹在处理站的座垫上。座垫是环形的，用于外围支撑晶片。电磁体建立了周边站磁场，其吸引晶片磁性材料形成夹具。台站磁场可以通过反向将晶片悬浮在座垫上和从其上离开。

3. 发明授权

US5077464A Method and apparatus for endpoint detection in a semiconductor wafer etching system 失效
标题翻译：用于半导体晶片蚀刻系统中端点检测的方法和装置
公开(公告)号：US5077464A
公开(公告)日：1991-12-31
申请号：US652297
申请日：1991-02-05
申请人： Peter Ebbing , Manoocher Birang
发明人： Peter Ebbing , Manoocher Birang
IPC分类号： B24B37/013 , B24D7/12 , G01B11/06 , G03F7/20 , H01L21/00 , H01L21/66
CPC分类号： B24B37/013 , B24D7/12 , G01B11/0683 , G03F7/70358 , H01L21/67253 , H01L22/26
摘要： A method for focussing a radiant energy beam characterized by the steps of scanning a beam of radiant energy across a test pattern including areas of differing reflectivity, detecting the variance in a reflected portion of the scanned beam and adjusting the beam to minimize the variance. Preferably, the test pattern includes areas of varying widths, e.g. relatively non-reflective areas of varying widths separated by reflective areas of uniform widths. As the beam is scanned perpendicularly across the test pattern it will be highly reflected by the reflective areas and will be partially absorbed by the non-reflective areas. If the beam is wider than a non-reflective area a portion of the beam will be absorbed and a portion of the beam will be reflected, resulting in a greater total reflection than if the beam is narrower than the non-reflective region. In consequence, the intensity of the reflected beam will vary as the energy beam is scanned across the test pattern as it encounters non-reflective areas of varying widths. The amount of variance in the reflected beam is related to the width of the beam and, therefore, the beam can be focussed by adjusting the beam to minimize this variance.
摘要翻译：一种用于聚焦辐射能量束的方法，其特征在于以下步骤：跨越包括不同反射率的区域的测试图案扫描辐射能束，检测扫描光束的反射部分中的方差，并调整光束以最小化方差。优选地，测试图案包括不同宽度的区域，例如，由具有均匀宽度的反射区域分开的不同宽度的相对非反射区域。当束被垂直扫描穿过测试图案时，其将被反射区域高度反射，并且将被非反射区域部分地吸收。如果光束比非反射区域宽，则光束的一部分将被吸收，并且光束的一部分将被反射，导致比如果光束比非反射区域窄的全反射。因此，当能量束遇到不同宽度的非反射区域时，能量束被扫描穿过测试图案，反射光束的强度将变化。反射光束中的方差量与光束的宽度有关，因此，可以通过调整光束来聚焦光束以使该方差最小化。

4. 发明授权

US5648847A Method and apparatus for normalizing a laser beam to a reflective surface 失效
标题翻译：将激光束归一化为反射表面的方法和装置
公开(公告)号：US5648847A
公开(公告)日：1997-07-15
申请号：US400469
申请日：1995-03-07
申请人： Peter Ebbing
发明人： Peter Ebbing
IPC分类号： G01B11/26 , B23K26/04 , H01L21/02 , H01L21/306 , H01L21/66 , G01B1/00 , G01B11/30
CPC分类号： B23K26/04 , B23K26/043
摘要： In an etch monitor system, a method and apparatus for adjusting the angle of incidence to normal between a laser beam and a reflective surface, such as a silicon wafer, includes a rotatable mirror having a pinhole formed therethrough, the rotatable mirror moveably mounted to be positioned in a first location within a light path and a second location out of said light path. When the rotatable mirror is located in the light path, the pinhole allows a beam of the laser beam to pass from a laser source to the reflective surface. If the beam is normal to the reflective surface, the beam is directed back toward the laser source through the pinhole. If the beam is not normal to the reflective surface, the beam is reflected by the rotatable mirror to a target, allowing observation on a lit spot of the target to enable normalization by making appropriate adjustments.
摘要翻译：在蚀刻监视器系统中，用于调节激光束和诸如硅晶片的反射表面之间的正常入射角的方法和装置包括具有穿过其中形成的针孔的可旋转镜，可旋转镜可移动地安装成定位在光路内的第一位置和离开所述光路的第二位置。当可旋转镜位于光路中时，针孔允许激光束的光束从激光源传播到反射表面。如果光束垂直于反射表面，则光束通过针孔被引导回激光源。如果光束不垂直于反射表面，则光束被可旋转镜反射到目标，允许在目标的点亮点上观察，以通过适当的调整来实现归一化。

5. 发明授权

US5219007A Method and apparatus for reducing particulate generation caused by door or cover flexing on high vacuum equipment 失效
标题翻译：用于减少门或盖在高真空设备上弯曲引起的颗粒物产生的方法和装置
公开(公告)号：US5219007A
公开(公告)日：1993-06-15
申请号：US802936
申请日：1991-12-06
申请人： Peter Ebbing
发明人： Peter Ebbing
IPC分类号： B01J3/00 , B01J3/03
CPC分类号： B01J3/002 , B01J3/03
摘要： An inner lid is attached to a vacuum chamber, covering an inner region of the vacuum chamber. An outer lid, also attached to the vacuum chamber, covers the inner lid, leaving a region between the inner lid and the outer lid. A gas conduit allows gas to flow between the inner region of the vacuum chamber and the region between the inner lid and the outer lid. A filter is placed in or immediately outside the gas conduit to prevent particles from entering the inner region of the vacuum chamber from the region between the inner lid and the outer lid. Since the pressure is the same on the top and bottom of the inner lid, the inner lid does not flex and thus does not rub against the vacuum chamber when the vacuum chamber is pumped down or vented up.
摘要翻译：内盖附接到真空室，覆盖真空室的内部区域。也附接到真空室的外盖覆盖内盖，留下内盖和外盖之间的区域。气体导管允许气体在真空室的内部区域和内部盖和外部盖之间的区域之间流动。将过滤器放置在气体管道的外部或其外部，以防止颗粒从内盖和外盖之间的区域进入真空室的内部区域。由于内盖的顶部和底部的压力相同，所以当真空室被抽吸或排出时，内盖不会弯曲，因此不会摩擦真空室。

6. 发明授权

US4813840A Method of aligning wafers and device therefor 失效
标题翻译：对准晶圆的方法及其装置
公开(公告)号：US4813840A
公开(公告)日：1989-03-21
申请号：US84371
申请日：1987-08-11
申请人： Rakesh Prabhakar , A. Fernando Benavides , Petru Nitescu , Peter Ebbing
发明人： Rakesh Prabhakar , A. Fernando Benavides , Petru Nitescu , Peter Ebbing
IPC分类号： H01L21/68 , B65G47/24
CPC分类号： H01L21/68 , Y10S414/136
摘要： A cassette of conventional form is loaded with a plurality of semiconductor wafers having indexing flats of the known type and placed over three parallel rollers rotatably secured to a frame. The three rollers include a center roller and two side rollers positioned only slightly higher than the center roller such that their rotary motions can be communicated to the wafers by contact, depending on the position of the individual indexing flats. The indexing flats are roughly aligned in downward directions first by rotating only the center roller and after all three rollers are rotated to bring the indexing flats in upward directions, the wafers are more accurately aligned in a downward direction by rotating only the center roller and all three rollers are rotated thereafter for a predetermined period of time, depending on the desired angular position of the indexing flats.

7. 发明授权

US5263518A Method and apparatus for reducing particulate generation caused by door or cover flexing on high vacuum equipment 失效
公开(公告)号：US5263518A
公开(公告)日：1993-11-23
申请号：US806826
申请日：1991-12-06
申请人： Peter Ebbing
发明人： Peter Ebbing
IPC分类号： B01J3/00 , B01J3/03 , B65B31/00
CPC分类号： B01J3/002 , B01J3/03
摘要： An inner lid is attached to a vacuum chamber, covering an inner region of the vacuum chamber. An outer lid, also attached to the vacuum chamber, covers the inner lid, leaving a region between the inner lid and the outer lid. A gas conduit allows gas to flow between the inner region of the vacuum chamber and the region between the inner lid and the outer lid. A filter is placed in or immediately outside the gas conduit to prevent particles from entering the inner region of the vacuum chamber from the region between the inner lid and the outer lid. Since the pressure is the same on the top and bottom of the inner lid, the inner lid does not flex and thus does not rub against the vacuum chamber when the vacuum chamber is pumped down or vented up.

8. 发明授权

US5224581A Magnetic semiconductor wafers with handling apparatus and method 失效
标题翻译：具有处理装置和方法的磁性半导体晶片
公开(公告)号：US5224581A
公开(公告)日：1993-07-06
申请号：US852463
申请日：1992-03-17
申请人： Peter Ebbing , Jack Ford
发明人： Peter Ebbing , Jack Ford
IPC分类号： H01L21/687
CPC分类号： H01L21/68721
摘要： A semiconductor wafer is provided with magnetic material about the periphery for magnetically clamping the wafer on a seating gasket at the processing station. The seating gasket is annular for peripherally supporting the wafer. An electro-magnet establishes a peripheral station magnetic field which attracts the wafer magnetic material to form the clamp. The station magnetic field may by reversed to levitate the wafer onto and off of the seating gasket.
摘要翻译：半导体晶片周围设置有磁性材料，用于将晶片磁化地夹在处理站的座垫上。座垫是环形的，用于外围支撑晶片。电磁体建立了周边站磁场，其吸引晶片磁性材料形成夹具。台站磁场可以通过反向将晶片悬浮在座垫上和从其上离开。

9. 发明授权

US5151584A Method and apparatus for endpoint detection in a semiconductor wafer etching system 失效
标题翻译：用于半导体晶片蚀刻系统中端点检测的方法和装置
公开(公告)号：US5151584A
公开(公告)日：1992-09-29
申请号：US777770
申请日：1991-10-15
申请人： Peter Ebbing , Manoocher Birang
发明人： Peter Ebbing , Manoocher Birang
IPC分类号： B24B37/013 , B24D7/12 , G01B11/06 , G03F7/20 , H01L21/00 , H01L21/66
CPC分类号： B24B37/013 , B24D7/12 , G01B11/0683 , G03F7/70358 , H01L21/67253 , H01L22/26
摘要： A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: 1) scanning a semiconductor wafer with a narrowly focused laser beam; 2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; 3) parking the beam at the preferred spot; and 4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly responsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.
摘要翻译：一种用于半导体晶片蚀刻系统中端点检测的方法，其特征在于以下步骤：1）用窄聚焦的激光束扫描半导体晶片; 2）分析光束的反射部分以确定晶片的优选平坦区域上的优选停车点; 3）将梁停在优先位置; 以及4）分析光束的反射部分以确定何时优选的平坦区域被蚀刻通过。激光束的光点小于优选平坦区域的宽度，以消除在平坦区域的过渡边界处产生的噪声。优选地，晶片沿着相同的光束路径扫描多次，以允许比较几次扫描以确定优选的停车位。该装置包括一个波束形成组件; 扫描组件，其使激光束跨过晶片扫描; 检测组件，其响应于从所述晶片反射的所述激光束的一部分; 以及控制器，其操作激光器和扫描组件，并且响应于检测组件的输出。当检测组件的输出指示特征蚀刻曲线的停止时，控制器产生可以自动关闭蚀刻系统的端点检测信号。

10. 发明授权

US4953982A Method and apparatus for endpoint detection in a semiconductor wafer etching system 失效
标题翻译：用于半导体晶片蚀刻系统中端点检测的方法和装置
公开(公告)号：US4953982A
公开(公告)日：1990-09-04
申请号：US221979
申请日：1988-07-20
申请人： Peter Ebbing , Manoocher Birang
发明人： Peter Ebbing , Manoocher Birang
IPC分类号： G01B9/02 , B24B37/013 , B24D7/12 , G01B11/02 , G01B11/06 , G01M11/02 , G02B7/32 , G03F7/20 , G03F7/207 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/66
CPC分类号： B24B37/013 , B24D7/12 , G01B11/026 , G01B11/0683 , G02B7/32 , G03F7/70358 , H01L21/67069 , H01L21/67242 , H01L21/67253 , H01L22/26
摘要： A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: (1) scanning a semiconductor wafer with a narrowly focussed laser beam; (2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; (3) parking the beam at the preferred spot; and (4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly reponsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.

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