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1. 发明申请

US20110031557A1 GATE DIELECTRIC FIRST REPLACEMENT GATE PROCESSES AND INTEGRATED CIRCUITS THEREFROM 有权
标题翻译：门式电介质第一次更换门电路及集成电路
公开(公告)号：US20110031557A1
公开(公告)日：2011-02-10
申请号：US12908140
申请日：2010-10-20
申请人： Brian K. Kirkpatrick , Freidoon Mehrad , Shaofeng Yu
发明人： Brian K. Kirkpatrick , Freidoon Mehrad , Shaofeng Yu
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823842 , H01L29/513 , H01L29/66545 , H01L29/66553 , H01L29/6656
摘要： A method for fabricating a CMOS integrated circuit (IC) and ICs therefrom includes the steps of providing a substrate having a semiconductor surface, wherein the semiconductor surface has PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate dielectric layer is formed on the PMOS regions and NMOS regions. An original gate electrode layer is formed on the gate dielectric layer. A gate masking layer is applied on the gate electrode layer. Etching is used to pattern the original gate electrode layer to simultaneously form original gate electrodes for the PMOS devices and NMOS devices. Source and drain regions are formed for the PMOS devices and NMOS devices. The original gate electrodes are removed for at least one of the PMOS devices and NMOS devices to form trenches using an etch process, such as a hydroxide-based solution, wherein at least a portion and generally substantially all of the gate dielectric layer is preserved. A metal comprising replacement gates is formed in the trenches, and fabrication of the IC is completed.
摘要翻译：一种用于制造CMOS集成电路（IC）及其IC的方法包括提供具有半导体表面的衬底的步骤，其中半导体表面具有用于PMOS器件的PMOS区域和用于NMOS器件的NMOS区域。栅极电介质层形成在PMOS区域和NMOS区域上。在栅极电介质层上形成原始栅电极层。栅极掩模层被施加在栅极电极层上。蚀刻用于对原始栅极电极层进行图案化以同时形成用于PMOS器件和NMOS器件的原始栅电极。为PMOS器件和NMOS器件形成源极和漏极区域。为了至少一个PMOS器件和NMOS器件去除原始栅电极，以使用诸如基于氢氧化物的溶液的蚀刻工艺形成沟槽，其中保留了栅极电介质层的至少一部分和基本上全部的栅极电介质层。在沟槽中形成包括置换栅极的金属，并且完成IC的制造。

2. 发明授权

US07838356B2 Gate dielectric first replacement gate processes and integrated circuits therefrom 有权
标题翻译：栅介质第一替代栅极工艺及其集成电路
公开(公告)号：US07838356B2
公开(公告)日：2010-11-23
申请号：US12347197
申请日：2008-12-31
申请人： Brian K. Kirkpatrick , Freidoon Mehrad , Shaofeng Yu
发明人： Brian K. Kirkpatrick , Freidoon Mehrad , Shaofeng Yu
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842 , H01L29/513 , H01L29/66545 , H01L29/66553 , H01L29/6656
摘要： A method for fabricating a CMOS integrated circuit (IC) and ICs therefrom includes the steps of providing a substrate having a semiconductor surface, wherein the semiconductor surface has PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate dielectric layer is formed on the PMOS regions and NMOS regions. An original gate electrode layer is formed on the gate dielectric layer. A gate masking layer is applied on the gate electrode layer. Etching is used to pattern the original gate electrode layer to simultaneously form original gate electrodes for the PMOS devices and NMOS devices. Source and drain regions are formed for the PMOS devices and NMOS devices. The original gate electrodes are removed for at least one of the PMOS devices and NMOS devices to form trenches using an etch process, such as a hydroxide-based solution, wherein at least a portion and generally substantially all of the gate dielectric layer is preserved. A metal comprising replacement gates is formed in the trenches, and fabrication of the IC is completed.
摘要翻译：一种用于制造CMOS集成电路（IC）及其IC的方法包括提供具有半导体表面的衬底的步骤，其中半导体表面具有用于PMOS器件的PMOS区域和用于NMOS器件的NMOS区域。栅极电介质层形成在PMOS区域和NMOS区域上。在栅极电介质层上形成原始栅电极层。栅极掩模层被施加在栅极电极层上。蚀刻用于对原始栅极电极层进行图案化以同时形成用于PMOS器件和NMOS器件的原始栅电极。为PMOS器件和NMOS器件形成源极和漏极区域。为了至少一个PMOS器件和NMOS器件去除原始栅电极，以使用诸如基于氢氧化物的溶液的蚀刻工艺形成沟槽，其中保留了栅极电介质层的至少一部分和基本上全部的栅极电介质层。在沟槽中形成包括置换栅极的金属，并且完成IC的制造。

3. 发明申请

US20100164006A1 GATE DIELECTRIC FIRST REPLACEMENT GATE PROCESSES AND INTEGRATED CIRCUITS THEREFROM 有权
标题翻译：门式电介质第一次更换门电路及集成电路
公开(公告)号：US20100164006A1
公开(公告)日：2010-07-01
申请号：US12347197
申请日：2008-12-31
申请人： BRIAN K. KIRKPATRICK , Freidoon Mehrad , Shaofeng Yu
发明人： BRIAN K. KIRKPATRICK , Freidoon Mehrad , Shaofeng Yu
IPC分类号： H01L27/088 , H01L21/8238
CPC分类号： H01L21/823842 , H01L29/513 , H01L29/66545 , H01L29/66553 , H01L29/6656
摘要： A method for fabricating a CMOS integrated circuit (IC) and ICs therefrom includes the steps of providing a substrate having a semiconductor surface, wherein the semiconductor surface has PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate dielectric layer is formed on the PMOS regions and NMOS regions. An original gate electrode layer is formed on the gate dielectric layer. A gate masking layer is applied on the gate electrode layer. Etching is used to pattern the original gate electrode layer to simultaneously form original gate electrodes for the PMOS devices and NMOS devices. Source and drain regions are formed for the PMOS devices and NMOS devices. The original gate electrodes are removed for at least one of the PMOS devices and NMOS devices to form trenches using an etch process, such as a hydroxide-based solution, wherein at least a portion and generally substantially all of the gate dielectric layer is preserved. A metal comprising replacement gates is formed in the trenches, and fabrication of the IC is completed.
摘要翻译：一种用于制造CMOS集成电路（IC）及其IC的方法包括提供具有半导体表面的衬底的步骤，其中半导体表面具有用于PMOS器件的PMOS区域和用于NMOS器件的NMOS区域。栅极电介质层形成在PMOS区域和NMOS区域上。在栅极电介质层上形成原始栅电极层。栅极掩模层被施加在栅极电极层上。蚀刻用于对原始栅极电极层进行图案化以同时形成用于PMOS器件和NMOS器件的原始栅电极。为PMOS器件和NMOS器件形成源极和漏极区域。为了至少一个PMOS器件和NMOS器件去除原始栅电极，以使用诸如基于氢氧化物的溶液的蚀刻工艺形成沟槽，其中保留了栅极电介质层的至少一部分和基本上全部的栅极电介质层。在沟槽中形成包括置换栅极的金属，并且完成IC的制造。

4. 发明授权

US08372703B2 Gate dielectric first replacement gate processes and integrated circuits therefrom 有权
标题翻译：栅介质第一替代栅极工艺及其集成电路
公开(公告)号：US08372703B2
公开(公告)日：2013-02-12
申请号：US12908140
申请日：2010-10-20
申请人： Brian K. Kirkpatrick , Freidoon Mehrad , Shaofeng Yu
发明人： Brian K. Kirkpatrick , Freidoon Mehrad , Shaofeng Yu
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842 , H01L29/513 , H01L29/66545 , H01L29/66553 , H01L29/6656
摘要： A method for fabricating a CMOS integrated circuit (IC) and ICs therefrom includes the steps of providing a substrate having a semiconductor surface, wherein the semiconductor surface has PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate dielectric layer is formed on the PMOS regions and NMOS regions. An original gate electrode layer is formed on the gate dielectric layer. A gate masking layer is applied on the gate electrode layer. Etching is used to pattern the original gate electrode layer to simultaneously form original gate electrodes for the PMOS devices and NMOS devices. Source and drain regions are formed for the PMOS devices and NMOS devices. The original gate electrodes are removed for at least one of the PMOS devices and NMOS devices to form trenches using an etch process, such as a hydroxide-based solution, wherein at least a portion and generally substantially all of the gate dielectric layer is preserved. A metal comprising replacement gates is formed in the trenches, and fabrication of the IC is completed.
摘要翻译：一种用于制造CMOS集成电路（IC）及其IC的方法包括提供具有半导体表面的衬底的步骤，其中半导体表面具有用于PMOS器件的PMOS区域和用于NMOS器件的NMOS区域。栅极电介质层形成在PMOS区域和NMOS区域上。在栅极电介质层上形成原始栅电极层。栅极掩模层被施加在栅极电极层上。蚀刻用于对原始栅极电极层进行图案化以同时形成用于PMOS器件和NMOS器件的原始栅电极。为PMOS器件和NMOS器件形成源极和漏极区域。为了至少一个PMOS器件和NMOS器件去除原始栅电极，以使用诸如基于氢氧化物的溶液的蚀刻工艺形成沟槽，其中保留了栅极电介质层的至少一部分和基本上全部的栅极电介质层。在沟槽中形成包括置换栅极的金属，并且完成IC的制造。

5. 发明授权

US07943456B2 Selective wet etch process for CMOS ICs having embedded strain inducing regions and integrated circuits therefrom 有权
标题翻译：具有嵌入式应变诱导区域和集成电路的CMOS IC的选择性湿蚀刻工艺
公开(公告)号：US07943456B2
公开(公告)日：2011-05-17
申请号：US12347173
申请日：2008-12-31
申请人： Shaofeng Yu , Freidoon Mehrad , Brian K. Kirkpatrick
发明人： Shaofeng Yu , Freidoon Mehrad , Brian K. Kirkpatrick
IPC分类号： H01L21/8238 , H01L29/80
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A method for fabricating a CMOS integrated circuit (IC) and ICs therefrom includes providing a substrate having a semiconductor surface including PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate stack including a gate electrode layer is formed on a gate dielectric layer in or on both the PMOS regions and the NMOS regions. An n-type doping is used to create n-type wet etch sensitized regions on opposing sides of the gate stack in both the PMOS and said NMOS regions. Wet etching removes the n-type wet etch sensitized regions in (i) at least a portion of said PMOS regions to form a plurality of PMOS source/drain recesses or (ii) in at least a portion of said NMOS regions to form a plurality of NMOS source/drain recesses, or (i) and (ii). At least one of a compressive strain inducing epitaxial layer is formed in the plurality of PMOS source/drain recesses and a tensile strain inducing epitaxial layer is formed in the plurality of NMOS source/drain recesses. The fabrication of the IC is then completed.
摘要翻译：一种用于制造CMOS集成电路（IC）和其IC的方法包括提供具有包括用于PMOS器件的PMOS区域和NMOS器件的NMOS区域的半导体表面的衬底。包括栅极电极层的栅极堆叠形成在PMOS区域和NMOS区域中的栅极电介质层中或栅极电介质层上。使用n型掺杂来在PMOS和NMOS区域中的栅极堆叠的相对侧上产生n型湿法蚀刻增感区域。湿式蚀刻去除在（i）所述PMOS区域的至少一部分中的n型湿法蚀刻增感区域以形成多个PMOS源极/漏极凹槽，或（ii）在所述NMOS区域的至少一部分中形成多个的NMOS源/漏极凹槽，或（i）和（ii）。至少一个压应变诱导外延层形成在多个PMOS源极/漏极凹槽中，并且在多个NMOS源极/漏极凹槽中形成拉伸应变诱发外延层。然后完成IC的制造。

6. 发明申请

US20100176462A1 METHOD OF SIMULTANEOUSLY SILICIDING A POLYSILICON GATE AND SOURCE/DRAIN OF A SEMICONDUCTOR DEVICE, AND RELATED DEVICE 审中-公开
标题翻译：同时硅化多晶硅栅极和半导体器件的源极/漏极的方法及相关器件
公开(公告)号：US20100176462A1
公开(公告)日：2010-07-15
申请号：US12731932
申请日：2010-03-25
申请人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
发明人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
IPC分类号： H01L29/78
CPC分类号： H01L29/665 , H01L21/28097 , H01L21/823814 , H01L21/823835 , H01L29/4975 , H01L29/6653 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a semiconductor substrate (the gate stack comprising a first polysilicon layer, a first nitride layer, and a second polysilicon layer), forming a second nitride layer over an active region in the semiconductor substrate adjacent to the gate stack, performing a chemical mechanical polishing that stops on the first nitride layer and on the second nitride layer, removing the first nitride layer and the second nitride layer, and performing a simultaneous silicidation of the first polysilicon layer and the active region.
摘要翻译：同时硅化半导体器件的多晶硅栅极和源极/漏极的方法以及相关器件。示例性实施例中的至少一些是包括在半导体衬底上形成栅极堆叠的方法（栅堆叠包括第一多晶硅层，第一氮化物层和第二多晶硅层），在有源区上形成第二氮化物层所述半导体衬底与所述栅极堆叠相邻，执行停止在所述第一氮化物层和所述第二氮化物层上的化学机械抛光，去除所述第一氮化物层和所述第二氮化物层，以及执行所述第一多晶硅层的同时硅化;以及活跃区域。

7. 发明授权

US07727842B2 Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device 有权
标题翻译：同时硅化半导体器件的多晶硅栅极和源极/漏极的方法及相关器件
公开(公告)号：US07727842B2
公开(公告)日：2010-06-01
申请号：US11741519
申请日：2007-04-27
申请人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
发明人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
IPC分类号： H01L21/8234
CPC分类号： H01L29/665 , H01L21/28097 , H01L21/823814 , H01L21/823835 , H01L29/4975 , H01L29/6653 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a semiconductor substrate (the gate stack comprising a first polysilicon layer, a first nitride layer, and a second polysilicon layer), forming a second nitride layer over an active region in the semiconductor substrate adjacent to the gate stack, performing a chemical mechanical polishing that stops on the first nitride layer and on the second nitride layer, removing the first nitride layer and the second nitride layer, and performing a simultaneous silicidation of the first polysilicon layer and the active region.
摘要翻译：同时硅化半导体器件的多晶硅栅极和源极/漏极的方法以及相关器件。示例性实施例中的至少一些是包括在半导体衬底上形成栅极堆叠的方法（栅堆叠包括第一多晶硅层，第一氮化物层和第二多晶硅层），在有源区上形成第二氮化物层所述半导体衬底与所述栅极堆叠相邻，执行停止在所述第一氮化物层和所述第二氮化物层上的化学机械抛光，去除所述第一氮化物层和所述第二氮化物层，以及执行所述第一多晶硅层的同时硅化;以及活跃区域。

8. 发明授权

US07396716B2 Method to obtain fully silicided poly gate 有权
标题翻译：获得完全硅化多孔的方法
公开(公告)号：US07396716B2
公开(公告)日：2008-07-08
申请号：US11201924
申请日：2005-08-11
申请人： Freidoon Mehrad , Shaofeng Yu , Joe G. Tran
发明人： Freidoon Mehrad , Shaofeng Yu , Joe G. Tran
IPC分类号： H01L21/311
CPC分类号： H01L21/823425 , H01L21/28097 , H01L21/31111 , H01L21/31116 , H01L21/823443 , H01L21/823468 , H01L21/823835 , H01L29/4975 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a capping layer 610 over gate structures 230 located over a microelectronics substrate 210 wherein the gate structures 230 include sidewall spacers 515 and have a doped region 525 located between them. A protective layer 710 is placed over the capping layer 610 and the doped region 525, and a portion of the protective layer 710 and capping layer 610 that are located over the gate structures are removed to expose a top surface of the gate structures 230. A remaining portion of the protective layer 710 and capping layer 610 remains over the doped region 525. With the top surface of the gate structures 230 exposed, metal is incorporated into the gate structures to form gate electrodes 230.
摘要翻译：本发明提供一种制造微电子器件的方法。在一个方面，该方法包括在位于微电子器件衬底210之上的栅极结构230上形成覆盖层610，其中栅极结构230包括侧壁间隔物515并且具有位于它们之间的掺杂区域525。保护层710放置在覆盖层610和掺杂区域525之上，并且去除位于栅极结构上方的保护层710和覆盖层610的一部分以露出栅极结构230的顶表面。保护层710和覆盖层610的剩余部分保留在掺杂区域525之上。在栅极结构230的顶表面暴露的情况下，将金属结合到栅极结构中以形成栅电极230。

9. 发明申请

US20080265344A1 METHOD OF SIMULTANEOUSLY SILICIDING A POLYSILICON GATE AND SOURCE/DRAIN OF A SEMICONDUCTOR DEVICE, AND RELATED DEVICE 有权
标题翻译：同时硅化多晶硅栅极和半导体器件的源极/漏极的方法及相关器件
公开(公告)号：US20080265344A1
公开(公告)日：2008-10-30
申请号：US11741519
申请日：2007-04-27
申请人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
发明人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/665 , H01L21/28097 , H01L21/823814 , H01L21/823835 , H01L29/4975 , H01L29/6653 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a semiconductor substrate (the gate stack comprising a first polysilicon layer, a first nitride layer, and a second polysilicon layer), forming a second nitride layer over an active region in the semiconductor substrate adjacent to the gate stack, performing a chemical mechanical polishing that stops on the first nitride layer and on the second nitride layer, removing the first nitride layer and the second nitride layer, and performing a simultaneous silicidation of the first polysilicon layer and the active region.
摘要翻译：同时硅化半导体器件的多晶硅栅极和源极/漏极的方法以及相关器件。示例性实施例中的至少一些是包括在半导体衬底上形成栅极堆叠的方法（栅堆叠包括第一多晶硅层，第一氮化物层和第二多晶硅层），在有源区上形成第二氮化物层所述半导体衬底与所述栅极堆叠相邻，执行停止在所述第一氮化物层和所述第二氮化物层上的化学机械抛光，去除所述第一氮化物层和所述第二氮化物层，以及执行所述第一多晶硅层的同时硅化;以及活跃区域。

10. 发明授权

US09035399B2 Structure for facilitating the simultaneous silicidation of a polysilicon gate and source/drain of a semiconductor device 有权
标题翻译：用于促进半导体器件的多晶硅栅极和源极/漏极的同时硅化的结构
公开(公告)号：US09035399B2
公开(公告)日：2015-05-19
申请号：US12731932
申请日：2010-03-25
申请人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
发明人： Freidoon Mehrad , Shaofeng Yu , Steven A. Vitale , Joe G. Tran
IPC分类号： H01L29/78 , H01L29/66 , H01L21/28 , H01L21/8238 , H01L29/49
CPC分类号： H01L29/665 , H01L21/28097 , H01L21/823814 , H01L21/823835 , H01L29/4975 , H01L29/6653 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a semiconductor substrate (the gate stack comprising a first polysilicon layer, a first nitride layer, and a second polysilicon layer), forming a second nitride layer over an active region in the semiconductor substrate adjacent to the gate stack, performing a chemical mechanical polishing that stops on the first nitride layer and on the second nitride layer, removing the first nitride layer and the second nitride layer, and performing a simultaneous silicidation of the first polysilicon layer and the active region.
摘要翻译：同时硅化半导体器件的多晶硅栅极和源极/漏极的方法以及相关器件。示例性实施例中的至少一些是包括在半导体衬底上形成栅极堆叠的方法（栅堆叠包括第一多晶硅层，第一氮化物层和第二多晶硅层），在有源区上形成第二氮化物层所述半导体衬底与所述栅极堆叠相邻，执行停止在所述第一氮化物层和所述第二氮化物层上的化学机械抛光，去除所述第一氮化物层和所述第二氮化物层，以及执行所述第一多晶硅层的同时硅化;以及活跃区域。

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