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    • 4. 发明申请
    • Nanotube schottky diodes for high-frequency applications
    • 纳米管肖特基二极管用于高频应用
    • US20080315181A1
    • 2008-12-25
    • US12072320
    • 2008-02-25
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • H01L29/12H01L21/205
    • H01L29/872B82Y10/00H01L29/0665H01L29/0673H01L29/66143
    • Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.
    • 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管(s-SWNT)的肖特基二极管,用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻,在单个器件中并行生长多个SWNT,并且金属管被选择性地烧毁。 在低偏差下,这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz(THz)频率下,这些二极管作为室温下的直接检测器的建模,表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率(NEP)在10- 13 W /平方根(√)Hz。
    • 5. 发明申请
    • Nanotube Schottky diodes for high-frequency applications
    • 纳米管肖特基二极管用于高频应用
    • US20060261433A1
    • 2006-11-23
    • US11439625
    • 2006-05-23
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • H01L21/00
    • H01L29/872B82Y10/00H01L29/0665H01L29/0673H01L29/66143
    • Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.
    • 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管(s-SWNT)的肖特基二极管,用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻,在单个器件中并行生长多个SWNT,并且金属管被选择性地烧毁。 在低偏差下,这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz(THz)频率下,这些二极管作为室温下的直接检测器的建模,表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率(NEP)在10- 13 W /平方根(√)Hz。