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1. 发明授权

US06680766B1 Liquid crystal display wherein twist angle of liquid crystal material differ from 90° by approximately 15° or more 有权
标题翻译：液晶显示器，其中液晶材料的扭转角度不同于90°大约15°或更大
公开(公告)号：US06680766B1
公开(公告)日：2004-01-20
申请号：US09223845
申请日：1998-12-31
申请人： Brent D. Larson , Elias S. Haim , Kalluri R. Sarma , Syed H. Jamal
发明人： Brent D. Larson , Elias S. Haim , Kalluri R. Sarma , Syed H. Jamal
IPC分类号： G02F11335
CPC分类号： G02F1/1396 , G02F1/133634 , G02F2001/133757 , G02F2001/1398
摘要： A display according to various aspects of the present invention comprises an LCD having a first substrate, a second substrate proximate the first substrate, a liquid crystal material located between the first and second substrates, an element for compensating for horizontal view angle limitations of the display. The LCD may further include a nonmechanical element for vertically shifting the viewing angle associated with the high-contrast viewing envelope of the LCD device.
摘要翻译：根据本发明的各个方面的显示器包括具有第一基板，靠近第一基板的第二基板，位于第一和第二基板之间的液晶材料的LCD，用于补偿显示器的水平视角限制的元件。 LCD还可以包括用于垂直移动与LCD装置的高对比度观看包络相关联的视角的非机械元件。

2. 发明申请

US20110242658A1 FILM STRUCTURE HAVING INORGANIC SURFACE STRUCTURES AND RELATED FABRICATION METHODS 审中-公开
标题翻译：具有无机表面结构的膜结构和相关制造方法
公开(公告)号：US20110242658A1
公开(公告)日：2011-10-06
申请号：US12753964
申请日：2010-04-05
申请人： Kalluri R. Sarma
发明人： Kalluri R. Sarma
IPC分类号： G02B5/00 , B05D5/06 , B29D11/00 , B32B3/10
CPC分类号： G06F3/041 , Y10T428/24802 , Y10T428/24926
摘要： Methods and apparatus are provided for forming a smudge-resistant film structure that comprises a plurality of transparent inorganic surface structures overlying a transparent substrate. A method for forming the film structure comprises providing a transparent substrate and forming a plurality of transparent surface structures overlying the transparent substrate, wherein each of the transparent surface structures comprises an inorganic material.
摘要翻译：提供了用于形成防透光膜结构的方法和装置，其包括覆盖在透明基板上的多个透明无机表面结构。一种形成薄膜结构的方法包括提供透明基底并形成覆盖透明基底的多个透明表面结构，其中每个透明表面结构都包括无机材料。

3. 发明申请

US20090179848A1 METHOD AND SYSTEM FOR IMPROVING DIMMING PERFORMANCE IN A FIELD SEQUENTIAL COLOR DISPLAY DEVICE 有权
标题翻译：用于改善现场顺序颜色显示装置中的调色性能的方法和系统
公开(公告)号：US20090179848A1
公开(公告)日：2009-07-16
申请号：US11972199
申请日：2008-01-10
申请人： John Schmidt , Kalluri R. Sarma , Dennis M. Davey
发明人： John Schmidt , Kalluri R. Sarma , Dennis M. Davey
IPC分类号： G09G3/36 , H04N5/66
CPC分类号： G09G3/3413 , G09G3/2081 , G09G3/3426 , G09G2310/0235 , G09G2320/041 , G09G2320/064
摘要： Methods and systems for displaying an image on a display device having first and second light sources are provided. A video signal is provided to the display device. The video signal includes first and second video frames. Each video frame includes first and second sub-frames corresponding to the respective first and second light sources. The first light source is operated for a first duration during the first sub-frame of the first video frame. The first light source is operated for a second duration during the first sub-frame of the second video frame. The second duration is different from the first duration.
摘要翻译：提供了用于在具有第一和第二光源的显示装置上显示图像的方法和系统。视频信号被提供给显示装置。视频信号包括第一和第二视频帧。每个视频帧包括对应于相应的第一和第二光源的第一和第二子帧。第一光源在第一视频帧的第一子帧期间操作第一持续时间。第一光源在第二视频帧的第一子帧期间操作第二持续时间。第二个持续时间与第一个持续时间不同。

4. 发明授权

US07316942B2 Flexible active matrix display backplane and method 有权
标题翻译：灵活的有源矩阵显示背板和方法
公开(公告)号：US07316942B2
公开(公告)日：2008-01-08
申请号：US11058062
申请日：2005-02-14
申请人： Kalluri R. Sarma , Charles Chanley
发明人： Kalluri R. Sarma , Charles Chanley
IPC分类号： H01L21/00
CPC分类号： H01L27/1218 , G02F1/133305 , G02F1/13439 , G02F1/1368 , H01L27/1214 , H01L27/1259 , H01L29/41733 , H01L29/66765 , H01L29/78603
摘要： An active matrix display backplane is formed by annealing a flexible dielectric substrate, and then forming one or more thin-film-transistors (TFTs), one or more pixel electrodes, and an interconnect on a surface of the annealed substrate. The interconnect includes individual, spaced apart electrodes that are electrically coupled to one another. One of the interconnect electrodes is electrically coupled to a TFT, and the other interconnect electrode is electrically coupled to the pixel electrode, to thereby electrically interconnect the TFT and the pixel electrode.
摘要翻译：通过退火柔性电介质基板，然后在退火基板的表面上形成一个或多个薄膜晶体管（TFT），一个或多个像素电极和互连形成有源矩阵显示背板。互连包括彼此电耦合的单独的间隔开的电极。互连电极中的一个电耦合到TFT，并且另一个互连电极电耦合到像素电极，从而电连接TFT和像素电极。

5. 发明授权

US5258323A Single crystal silicon on quartz 失效
标题翻译：石英单晶硅
公开(公告)号：US5258323A
公开(公告)日：1993-11-02
申请号：US998968
申请日：1992-12-29
申请人： Kalluri R. Sarma , Charles S. Chanley
发明人： Kalluri R. Sarma , Charles S. Chanley
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1368 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L27/12 , H01L29/786
CPC分类号： H01L21/76264 , H01L21/2007 , H01L21/764 , H01L21/76275 , H01L21/76289 , Y10S148/012 , Y10S148/135 , Y10S148/15 , Y10S438/977
摘要： A method for fabricating single crystal islands on a high temperature substrate, thereby allowing for the use of high temperature processes to further make devices incorporating the islands such as, for example, high mobility thin film transistor integrated drivers for active matrix displays. The method essentially includes depositing an etch stop layer on a single crystal silicon substrate, depositing a single crystal silicon device layer on the etch stop layer, bonding a quartz substrate to the single crystal silicon device layer at room temperature, sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate, grinding away a portion of the silicon substrate and a portion of the adhesive, etching away the remaining portion of the silicon substrate, removing the remaining portion of the adhesive, etching away the etch stop layer, applying a photoresist mask on the single crystal silicon device layer for defining the islands on the single crystal silicon device layer, etching single crystal silicon islands, and then the first non-room-temperature process of diffusion bonding the single crystal silicon islands to the quartz substrate.
摘要翻译：一种用于在高温衬底上制造单晶岛的方法，从而允许使用高温工艺来进一步制造并入岛的器件，例如用于有源矩阵显示器的高迁移率薄膜晶体管集成驱动器。该方法基本上包括在单晶硅衬底上沉积蚀刻停止层，在蚀刻停止层上沉积单晶硅器件层，在室温下将石英衬底结合到单晶硅器件层，用粘合剂密封和固定单晶硅衬底，蚀刻停止层，单晶硅器件层和石英衬底的边缘，研磨硅衬底的一部分和粘合剂的一部分，蚀刻掉硅衬底的剩余部分，去除粘合剂的剩余部分，蚀刻掉蚀刻停止层，在单晶硅器件层上施加光致抗蚀剂掩模以限定单晶硅器件层上的岛，蚀刻单晶硅岛，将单晶硅岛扩散接合到石英衬底的室温过程。

6. 发明授权

US5168074A Active matrix liquid crystal display fabrication for grayscale 失效
标题翻译：有源矩阵液晶显示器制造用于灰度级
公开(公告)号：US5168074A
公开(公告)日：1992-12-01
申请号：US696656
申请日：1991-05-07
申请人： Kalluri R. Sarma
发明人： Kalluri R. Sarma
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368
CPC分类号： G02F1/1362 , G02F1/136213 , G02F2001/134345 , G02F2001/134354 , Y10S148/014
摘要： A structure and method of fabricating a active matrix display with halftone grayscale and wide viewing angle, having an active matrix array and a control capacitor array fabricated on separate substrates.
摘要翻译：制造具有半色调灰度和宽视角的有源矩阵显示器的结构和方法，其具有制造在分开的基板上的有源矩阵阵列和控制电容器阵列。

7. 发明授权

US5126865A Liquid crystal display with sub-pixels 失效
标题翻译：带子像素的液晶显示
公开(公告)号：US5126865A
公开(公告)日：1992-06-30
申请号：US636534
申请日：1990-12-31
申请人： Kalluri R. Sarma
发明人： Kalluri R. Sarma
IPC分类号： G02F1/133 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30
CPC分类号： G02F1/136213 , G02F2001/134345 , G02F2203/30
摘要： A half-tone pixel having subpixels and control capacitor constituting a 100 percent optically active pixel. The subpixel design results in no reductions in the maximum pixel aperture ratio, brightness or contrast, as a pixel with no subpixels would have. Various subpixel layouts including differing numbers of subpixels and subpixel-turn-on sequences may be implemented and still result in the entire pixel being optically active.

8. 发明授权

US5110748A Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display 失效
标题翻译：制造高迁移率薄膜晶体管作为有源矩阵显示器的集成驱动器的方法
公开(公告)号：US5110748A
公开(公告)日：1992-05-05
申请号：US733922
申请日：1991-07-22
申请人： Kalluri R. Sarma
发明人： Kalluri R. Sarma
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/306 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L21/30604 , H01L21/2007 , H01L21/76264 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78654 , G02F1/13454 , H01L21/76275 , H01L21/76281 , H01L21/76289 , H01L2221/68368 , Y10S148/012 , Y10S148/15
摘要： High mobility thin film transistors for fabricating integrated drivers for active matrix displays and a special method of fabrication for obtaining the thin film transistors having mobility sufficiently high enough as drivers operable in the several megahertz frequency range needed for driving high resolution active matrix displays.
摘要翻译：用于制造用于有源矩阵显示器的集成驱动器的高迁移率薄膜晶体管，以及用于获得具有足够高的移动性的薄膜晶体管的特殊制造方法，该驱动器可用于驱动高分辨率有源矩阵显示器所需的几兆赫兹频率范围内的驱动器。

9. 发明授权

US4427638A Apparatus for semiconductor ribbon-to-ribbon conversion 失效
标题翻译：用于半导体色带到色带转换的设备
公开(公告)号：US4427638A
公开(公告)日：1984-01-24
申请号：US301627
申请日：1981-09-14
申请人： Ralph J. Ellis , Richard W. Gurtler , Kalluri R. Sarma
发明人： Ralph J. Ellis , Richard W. Gurtler , Kalluri R. Sarma
IPC分类号： C30B13/00 , C30B13/24 , C30B13/06 , C30B13/32
CPC分类号： C30B13/24 , C30B13/00 , C30B29/60 , Y10S117/904 , Y10S117/905 , Y10T117/1076 , Y10T117/1084
摘要： Apparatus is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.
摘要翻译：提供了用于以刚性边缘模式进行半导体色带到色带转换的装置。提供组合载体和掩模，通过该组合载体和掩模在转换过程中固定色带。载体保持色带并同时从着色能量束的加热效应掩盖色带的边缘。能量束（例如激光或电子束）撞击在带上并产生延伸穿过带的厚度的熔融区。在生长过程中，使熔融区沿带的长度移动。掩模防止带状物的最末端部分的熔化，从而允许快速生长速率和稳定的熔融区域，而不需要复杂的电子设备来在带状边缘处浇注能量束。

10. 发明授权

US4382099A Dopant predeposition from high pressure plasma source 失效
标题翻译：掺杂剂从高压等离子体源预沉积
公开(公告)号：US4382099A
公开(公告)日：1983-05-03
申请号：US314609
申请日：1981-10-26
申请人： Ronald N. Legge , Kalluri R. Sarma
发明人： Ronald N. Legge , Kalluri R. Sarma
IPC分类号： C23C16/513 , C30B31/02 , H01L21/225 , B05D1/08
CPC分类号： H01L21/2254 , C23C16/513 , C30B31/02
摘要： A method is provided for predepositing dopant material on semiconductor substrates. The semiconductor substrates are positioned within a high pressure plasma reactor apparatus. A high pressure rf plasma is generated in the apparatus at a pressure of about one atmosphere or greater. Dopant materials such as B.sub.2 H.sub.6, PH.sub.3, or AsH.sub.3 are introduced to the plasma and form ionized species of the dopant. The plasma and the ionized species are directed to the surface of the semiconductor substrates whereon a uniform layer of the dopant is deposited.
摘要翻译：提供了一种用于在半导体衬底上预先沉积掺杂剂材料的方法。半导体衬底位于高压等离子体反应器装置内。在大约一个大气压或更大的压力下，在装置中产生高压rf等离子体。将诸如B 2 H 6，PH 3或AsH 3的掺杂材料引入到等离子体中并形成掺杂剂的离子化物质。等离子体和电离物质被引导到半导体衬底的表面，其中淀积了均匀的掺杂剂层。

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