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1. 发明授权

US5969470A Charged particle source 失效
标题翻译：带电粒子源
公开(公告)号：US5969470A
公开(公告)日：1999-10-19
申请号：US745950
申请日：1996-11-08
申请人： Boris L. Druz , Alan V. Hayes , Victor Kanarov , Salvatore A. DiStefano , Emmanuel N. Lakios
发明人： Boris L. Druz , Alan V. Hayes , Victor Kanarov , Salvatore A. DiStefano , Emmanuel N. Lakios
IPC分类号： H01J27/16 , H01J37/08
CPC分类号： H01J27/16
摘要： A charged particle source applicable for etching, thin film deposition, or surface modification includes a conductive electrode for controlling the plasma potential and beam voltage, the electrode retaining long term conductivity during operation, such as by shielding or in situ cleaning during operation, and/or by being operated in pulse mode conditions capable of preventing charge accumulation in the source during ion extraction.
摘要翻译：适用于蚀刻，薄膜沉积或表面改性的带电粒子源包括用于控制等离子体电位和束电压的导电电极，电极在操作期间保持长期导电性，例如通过操作期间的屏蔽或原位清洁和/ 或通过在脉冲模式条件下工作，能够在离子提取期间防止源中的电荷累积。

2. 发明授权

US6150755A Charged particle source with liquid electrode 失效
标题翻译：带电极的带电粒子源
公开(公告)号：US6150755A
公开(公告)日：2000-11-21
申请号：US358454
申请日：1999-07-21
申请人： Boris L. Druz , Alan V. Hayes , Victor Kanarov , Salvatore A. DiStefano , Emmanuel N. Lakios
发明人： Boris L. Druz , Alan V. Hayes , Victor Kanarov , Salvatore A. DiStefano , Emmanuel N. Lakios
IPC分类号： H01J27/16 , H01J37/08
CPC分类号： H01J27/16
摘要： A charged particle source includes a vessel defining an interior for containing a plasma, the vessel having an inlet communicating with the interior of the vessel and connected to a source of atoms, and an aperture through which a charged particle beam is discharged, an energy generator for communicating with the atoms in the interior of the vessel and effecting ionization of the atoms in the vessel and creating the plasma, an electrode assembly disposed in the interior of the vessel, the electrode assembly including a conductive electrode support member, a tray member associated with the support member, a conductive liquid disposed in the tray member, the liquid having a surface area and a conductor connected between the conductive liquid and a voltage source, and an ion optics assembly disposed adjacent the vessel for accelerating plasma-generated charged particles having the same polarity as the conductive liquid in the vessel while maintaining charged particles of the opposite polarity within the vessel.
摘要翻译：带电粒子源包括限定用于容纳等离子体的内部的容器，所述容器具有与容器的内部连通并连接到原子源的入口以及放电带电粒子束通过的孔，能量发生器用于与容器内部的原子连通并且实现容器中原子的离子化并产生等离子体，设置在容器内部的电极组件，电极组件包括导电电极支撑构件，与所述支撑构件一起设置在所述托盘构件中的导电液体，所述液体具有连接在所述导电液体和电压源之间的表面积和导体，以及邻近所述容器设置的离子光学组件，用于加速等离子体产生的带电粒子，所述带电粒子具有与容器中的导电液体具有相同的极性，同时保持相反极性的带电粒子船内的荣耀。

3. 发明授权

US06225747B1 Charged-particle source, control system and process using gating to extract the charged particle beam 有权
标题翻译：带电粒子源，控制系统和使用门控的工艺提取带电粒子束
公开(公告)号：US06225747B1
公开(公告)日：2001-05-01
申请号：US09371061
申请日：1999-08-09
申请人： Roger P. Fremgen, Jr. , John Jacob , Alan V. Hayes , Victor Kanarov , Edward W. Ostan , Abraham J. Navy , Emmanuel N. Lakios , Genrikh Treyger
发明人： Roger P. Fremgen, Jr. , John Jacob , Alan V. Hayes , Victor Kanarov , Edward W. Ostan , Abraham J. Navy , Emmanuel N. Lakios , Genrikh Treyger
IPC分类号： H01J2702
CPC分类号： H01J37/08 , H01J27/022
摘要： A control system and process for operating a charged-particle source which achieves gating of the charged-particle beam without a mechanical shutter and with very short transition between the beam “on” and beam “off” states is presented. The process and control system provide very precise control of the duration of the charged-particle extraction.
摘要翻译：提出了一种用于操作带电粒子源的控制系统和过程，其实现了带有电荷的粒子束的门控，而没有机械快门，并且在光束“开”和光束“关闭”状态之间具有非常短的转换。过程和控制系统提供对带电粒子提取持续时间的非常精确的控制。

4. 发明授权

US5982101A Charged-particle source, control system, and process using gating to extract the ion beam 失效
标题翻译：带电粒子源，控制系统和使用门控提取离子束的过程
公开(公告)号：US5982101A
公开(公告)日：1999-11-09
申请号：US883696
申请日：1997-06-27
申请人： Roger P. Fremgen, Jr. , John Jacob , Alan V. Hayes , Victor Kanarov , Edward W. Ostan , Abraham J. Navy , Emmanuel N. Lakios , Genrikh Treyger
发明人： Roger P. Fremgen, Jr. , John Jacob , Alan V. Hayes , Victor Kanarov , Edward W. Ostan , Abraham J. Navy , Emmanuel N. Lakios , Genrikh Treyger
IPC分类号： H01J27/02 , H01J37/08 , H05H1/24
CPC分类号： H01J37/08 , H01J27/022
摘要： A control system and process for operating a charged-particle source which achieves gating of the charged-particle beam without a mechanical shutter and with very short transition between the beam "on" and beam "off" states is presented. The process and control system provide very precise control of the duration of the charged-particle extraction.
摘要翻译：提出了一种用于操作带电粒子源的控制系统和过程，其实现了带有电荷的粒子束的门控，而没有机械快门，并且在光束“开”状态和光束“关闭”状态之间具有非常短的转换。过程和控制系统提供对带电粒子提取持续时间的非常精确的控制。

5. 发明授权

US08158016B2 Methods of operating an electromagnet of an ion source 有权
标题翻译：操作离子源电磁铁的方法
公开(公告)号：US08158016B2
公开(公告)日：2012-04-17
申请号：US12037598
申请日：2008-02-26
申请人： Alan V. Hayes , Rustam Yevtukhov , Viktor Kanarov , Boris L. Druz
发明人： Alan V. Hayes , Rustam Yevtukhov , Viktor Kanarov , Boris L. Druz
IPC分类号： G01L21/30 , B44C1/22
CPC分类号： H01J37/08 , H01J27/18 , H01J37/3053 , H01J2237/061 , H01J2237/083 , H01J2237/24542 , H01L21/67069
摘要： Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to an electromagnet that is effective to define a plasma density distribution, extracting an ion beam from the plasma, measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet may be adjusted either manually or automatically to modify the magnetic field in the discharge space and, thereby, alter the plasma density distribution.
摘要翻译：操作离子源的电磁体的方法，用于产生具有可控离子电流密度分布的离子束。所述方法可以包括在离子源的放电空间中产生等离子体，通过向有效限定等离子体密度分布的电磁体施加电流来产生和放电放电空间中的磁场，从等离子体提取离子束，测量离子束密度的分布曲线，并将实际分布分布与用于离子束密度的期望分布分布进行比较。基于比较，可以手动或自动地调节施加到电磁体的电流，以改变放电空间中的磁场，从而改变等离子体密度分布。

6. 发明授权

US07557362B2 Ion sources and methods for generating an ion beam with a controllable ion current density distribution 有权
标题翻译：用于产生具有可控离子电流密度分布的离子束的离子源和方法
公开(公告)号：US07557362B2
公开(公告)日：2009-07-07
申请号：US11678979
申请日：2007-02-26
申请人： Rustam Yevtukhov , Alan V. Hayes , Viktor Kanarov , Boris L. Druz
发明人： Rustam Yevtukhov , Alan V. Hayes , Viktor Kanarov , Boris L. Druz
IPC分类号： H01J49/10 , H01J1/50 , H01J37/08
CPC分类号： H01J37/08 , H01J27/18 , H01J37/3053 , H01J37/32422 , H01J2237/061 , H01J2237/083 , H01L21/31105
摘要： Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.
摘要翻译：用于产生具有可控离子电流密度分布的离子束的离子源和方法。离子源包括放电室和适于产生用于改变放电室内的等离子体的密度分布的磁场的电磁体，从而改变离子电流密度分布。

7. 发明申请

US20080179284A1 METHODS OF OPERATING AN ELECTROMAGNET OF AN ION SOURCE 有权
标题翻译：一种离子源的电磁操作方法
公开(公告)号：US20080179284A1
公开(公告)日：2008-07-31
申请号：US12037598
申请日：2008-02-26
申请人： Alan V. Hayes , Rustam Yevtukhov , Viktor Kanarov , Boris L. Druz
发明人： Alan V. Hayes , Rustam Yevtukhov , Viktor Kanarov , Boris L. Druz
IPC分类号： G01L21/30 , B44C1/22
CPC分类号： H01J37/08 , H01J27/18 , H01J37/3053 , H01J2237/061 , H01J2237/083 , H01J2237/24542 , H01L21/67069
摘要： Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to an electromagnet that is effective to define a plasma density distribution, extracting an ion beam from the plasma, measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet may be adjusted either manually or automatically to modify the magnetic field in the discharge space and, thereby, alter the plasma density distribution.
摘要翻译：操作离子源的电磁体的方法，用于产生具有可控离子电流密度分布的离子束。所述方法可以包括在离子源的放电空间中产生等离子体，通过向有效限定等离子体密度分布的电磁体施加电流来产生和放电放电空间中的磁场，从等离子体提取离子束，测量离子束密度的分布曲线，并将实际分布分布与用于离子束密度的期望分布分布进行比较。基于比较，可以手动或自动地调节施加到电磁体的电流，以改变放电空间中的磁场，从而改变等离子体密度分布。

8. 发明申请

US20160071708A1 METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE USING AN ENERGETIC PARTICLE BEAM 审中-公开
标题翻译：使用能量粒子束的基板的表面处理方法和装置
公开(公告)号：US20160071708A1
公开(公告)日：2016-03-10
申请号：US14941897
申请日：2015-11-16
申请人： Boris L. Druz , Piero Sferlazzo , Roger P. Fremgen , Alan V. Hayes , Viktor Kanarov , Robert Krause , Ira Reiss
发明人： Boris L. Druz , Piero Sferlazzo , Roger P. Fremgen , Alan V. Hayes , Viktor Kanarov , Robert Krause , Ira Reiss
IPC分类号： H01J37/34 , H01J37/32 , C23C14/46
CPC分类号： H01J37/3488 , C23C14/044 , C23C14/221 , C23C14/46 , H01J37/20 , H01J37/302 , H01J37/317 , H01J37/32752 , H01J37/3441 , H01J37/3476 , H01J2237/0245 , H01J2237/045 , H01J2237/20207 , H01J2237/20214 , H01J2237/20221 , H01J2237/30472 , H01J2237/3146
摘要： Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.
摘要翻译：用能量粒子束处理衬底的方法和设备。衬底上的特征相对于能量粒子束定向，并且通过能量粒子束扫描衬底。衬底围绕其方位角对称轴周期性地被索引，同时被屏蔽以防止暴露于能量粒子束，以相对于束的主要尺寸重新定向特征。

9. 发明授权

US08835869B2 Ion sources and methods for generating an ion beam with controllable ion current density distribution 有权
标题翻译：用于产生具有可控离子电流密度分布的离子束的离子源和方法
公开(公告)号：US08835869B2
公开(公告)日：2014-09-16
申请号：US13448282
申请日：2012-04-16
申请人： Rustam Yevtukhov , Boris L. Druz , Viktor Kanarov , Alan V. Hayes
发明人： Rustam Yevtukhov , Boris L. Druz , Viktor Kanarov , Alan V. Hayes
IPC分类号： H01J49/10 , H01J1/50 , H01J37/08 , H01J37/305 , H01L21/311 , H01J27/18
CPC分类号： H01J27/18 , H01J37/08 , H01J37/3053 , H01J2237/061 , H01J2237/083 , H01J2237/24542 , H01L21/31105
摘要： Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.
摘要翻译：用于产生具有可控离子电流密度分布的离子束的离子源和方法。离子源包括具有靠近第一端的光栅位置的放电室和靠近与第一端相对的第二端的重入容器。等离子体成形器从入口容器延伸到等离子体放电室中。等离子体成形器的位置相对于基于栅格的离子光学器件是可调节的，使得等离子体成形器可以可操作地改变放电室内的等离子体密度分布。

10. 发明申请

US20120211166A1 ION SOURCES AND METHODS FOR GENERATING AN ION BEAM WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTION 有权
标题翻译：用于产生具有可控离子电流密度分布的离子束的离子源和方法
公开(公告)号：US20120211166A1
公开(公告)日：2012-08-23
申请号：US13448282
申请日：2012-04-16
申请人： Rustam Yevtukhov , Boris L. Druz , Viktor Kanarov , Alan V. Hayes
发明人： Rustam Yevtukhov , Boris L. Druz , Viktor Kanarov , Alan V. Hayes
IPC分类号： B05C9/00 , H01J27/16
CPC分类号： H01J27/18 , H01J37/08 , H01J37/3053 , H01J2237/061 , H01J2237/083 , H01J2237/24542 , H01L21/31105
摘要： Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.
摘要翻译：用于产生具有可控离子电流密度分布的离子束的离子源和方法。离子源包括具有靠近第一端的光栅位置的放电室和靠近与第一端相对的第二端的重入容器。等离子体成形器从入口容器延伸到等离子体放电室中。等离子体成形器的位置相对于基于栅格的离子光学器件是可调节的，使得等离子体成形器可以可操作地改变放电室内的等离子体密度分布。

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