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1. 发明申请

US20090140282A1 Led structure for flip-chip package and method thereof 审中-公开
标题翻译：用于倒装芯片封装的LED结构及其方法
公开(公告)号：US20090140282A1
公开(公告)日：2009-06-04
申请号：US12292716
申请日：2008-11-25
申请人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.
摘要翻译： LED结构可以通过使用倒装芯片封装封装。 LED结构被传导增强层覆盖。然后在导电增强层上形成凸起区域定义层，以在下面的p焊盘和n焊盘露出凸块区域部分，然后在凸块区域部分上形成凸台。随后去除碰撞区域定义层，然后暴露导电增强层。

2. 发明授权

US06884646B1 Method for forming an LED device with a metallic substrate 有权
标题翻译：用金属基板形成LED器件的方法
公开(公告)号：US06884646B1
公开(公告)日：2005-04-26
申请号：US10796200
申请日：2004-03-10
申请人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079
摘要： An LED epitaxial structure and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial structure. A plurality of second electrodes is formed on the surface of the LED epitaxial structure. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial structure are diced to form a plurality of LED devices.
摘要翻译：依次在临时衬底上形成LED外延结构和第一电极层。然后，在第一电极层上形成金属永久性基板，除去临时基板，露出LED外延结构的表面。在LED外延结构的表面上形成多个第二电极。最后，金属永久性基板，第一电极层和LED外延结构被切割以形成多个LED器件。

3. 发明申请

US20060286694A1 Method for fabricating LED 审中-公开
标题翻译：制造LED的方法
公开(公告)号：US20060286694A1
公开(公告)日：2006-12-21
申请号：US11455839
申请日：2006-06-20
申请人： Bor-Jen Wu , Mei-Hui Wu , Ken Kai-fu Chang , Chien-An Chen , Yuan-Hsiao Chang , Li-Shei Yeh
发明人： Bor-Jen Wu , Mei-Hui Wu , Ken Kai-fu Chang , Chien-An Chen , Yuan-Hsiao Chang , Li-Shei Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/0079
摘要： A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.
摘要翻译：随后在半导体衬底上形成高蚀刻选择层和发光结构。然后，在发光结构上随后形成p型欧姆接触层和金属基板。去除半导体衬底和高蚀刻选择层。接下来，与发光结构的与金属层相反的表面相邻地形成n型电极和透明导电层。

4. 发明申请

US20050230699A1 Light-emitting device with improved optical efficiency 审中-公开
标题翻译：具有提高光学效率的发光装置
公开(公告)号：US20050230699A1
公开(公告)日：2005-10-20
申请号：US11104463
申请日：2005-04-13
申请人： Bor-Jen Wu , Chien-An Chen , Mei-Hui Wu , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Chien-An Chen , Mei-Hui Wu , Yuan-Hsiao Chang
IPC分类号： H01L27/15 , H01L33/22 , H01L33/46
CPC分类号： H01L33/22 , H01L33/46
摘要： A light-emitting device with improved optical efficiency is disclosed. A semiconductor substrate underlies active p-n junction layers, and has an internal scattering/reflecting surface near the bottom surface of the semiconductor substrate. Accordingly, the light originated at the active p-n junction layers is internally reflected from the internally curved reflecting surface, and substantially passes though the top surface of the semiconductor substrate.
摘要翻译：公开了一种具有改善的光学效率的发光器件。半导体衬底位于有源p-n结层的底部，并且在半导体衬底的底表面附近具有内部散射/反射表面。因此，起始于活性p-n结层的光从内部弯曲的反射表面内部反射，并且基本上穿过半导体衬底的顶表面。

5. 发明授权

US06963167B2 Electrode structure for a light-emitting element 失效
标题翻译：用于发光元件的电极结构
公开(公告)号：US06963167B2
公开(公告)日：2005-11-08
申请号：US10733408
申请日：2003-12-12
申请人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chien-An Chen
发明人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chien-An Chen
IPC分类号： H01J1/62 , H01L33/38 , H05B33/02
CPC分类号： H01L33/38 , H01L33/20
摘要： An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.
摘要翻译：用于发光元件的电极结构包括第一电极和第二电极。第一电极具有彼此并联的多个第一指状物，第一连接部分和至少第一接触部分。每个第一手指具有第一端和第二端。多个第一端连接到第一连接部分。第一接触部分插入在任何第一端和第一连接部分之间。第二电极具有彼此并联的多个第二指状物，第二连接部分和至少第二接触部分。每个第二手指具有第三端和第四端，并且任何第二手指位于并平行于任何两个第一手指之间。多个第三端连接到第二连接部分。第二接触部分插入任何第三端和第二连接部分之间。第二电极在多个第二端中限定多个六边形单元。每个六边形单元将其四个侧面共享到其相邻的六边形单元，并且四边包括两个第二指状物和第二结合部分。每个第二端延伸到每个六边形单元的中心。

6. 发明申请

US20060284321A1 LED structure for flip-chip package and method thereof 审中-公开
标题翻译：用于倒装芯片封装的LED结构及其方法
公开(公告)号：US20060284321A1
公开(公告)日：2006-12-21
申请号：US11471482
申请日：2006-06-21
申请人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
IPC分类号： H01L23/48
CPC分类号： H01L33/62 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.
摘要翻译： LED结构可以通过使用倒装芯片封装封装。 LED结构被传导增强层覆盖。然后在导电增强层上形成凸起区域定义层，以在下面的p焊盘和n焊盘露出凸块区域部分，然后在凸块区域部分上形成凸台。随后去除碰撞区域定义层，然后暴露导电增强层。

7. 发明授权

US07364926B2 Method for manufacturing gallium nitride light emitting diode devices 有权
标题翻译：制造氮化镓发光二极管器件的方法
公开(公告)号：US07364926B2
公开(公告)日：2008-04-29
申请号：US11490050
申请日：2006-07-21
申请人： Li-Shei Yeh , Bor-Jen Wu , Chien-An Chen , Hsiao-Ping Chiu
发明人： Li-Shei Yeh , Bor-Jen Wu , Chien-An Chen , Hsiao-Ping Chiu
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/20 , H01L21/36
CPC分类号： H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of LED epitaxial areas. Then, a first transparent conductive layer, a metal reflective layer, and a first metal bonding layer are sequentially formed on the plurality of LED epitaxial areas and then part of the first transparent conductive layer, the metal reflective layer, and the first metal bonding layer are removed. Next, a permanent substrate is provided. At least a metal layer and a second metal bonding layer are formed on the permanent substrate. Then, part of at least the metal layer and the second metal bonding layer are removed. Next, the provisional substrate is bonded to the permanent substrate by aligned wafer bonding method. Then, the provisional substrate is removed to expose a surface of the LED epitaxial layer and then an n-type electrode is formed on the surface. Next, the permanent substrate is cut to form a plurality of LED devices.
摘要翻译：本文公开了一种用于制造GaN LED器件的方法。首先，在临时基板上形成LED外延层。 LED外延层的一部分被去除以形成多个LED外延区域。然后，在多个LED外延区域依次形成第一透明导电层，金属反射层和第一金属接合层，然后将第一透明导电层，金属反射层和第一金属接合层被删除。接下来，提供永久性基板。至少在永久性基板上形成金属层和第二金属结合层。然后，去除至少金属层和第二金属结合层的一部分。接下来，通过对准的晶片接合方法将临时衬底结合到永久衬底。然后，除去临时衬底以露出LED外延层的表面，然后在表面上形成n型电极。接下来，切割永久性基板以形成多个LED器件。

8. 发明授权

US06468824B2 Method for forming a semiconductor device having a metallic substrate 有权
标题翻译：用于形成具有金属基板的半导体器件的方法
公开(公告)号：US06468824B2
公开(公告)日：2002-10-22
申请号：US09814412
申请日：2001-03-22
申请人： Nai-Chuan Chen , Bor-Jen Wu , Yuan-Hsin Tzou , Nae-Guann Yih , Chien-An Chen
发明人： Nai-Chuan Chen , Bor-Jen Wu , Yuan-Hsin Tzou , Nae-Guann Yih , Chien-An Chen
IPC分类号： H01L2100
CPC分类号： H01L33/641 , H01L21/6835 , H01L33/0079 , H01L2933/0075
摘要： The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.
摘要翻译：本发明提供一种用金属基板形成半导体器件的方法。该方法包括提供半导体衬底。至少在半导体衬底上形成半导体层。在半导体层上形成金属电极层。在金属电极层上形成金属基板，去除半导体基板。金属基板具有高导热性和导电性的优点，可以提高半导体器件的可靠性和寿命。

9. 发明申请

US20070292978A1 Method for manufacturing gallium nitride light emitting diode devices 有权
标题翻译：制造氮化镓发光二极管器件的方法
公开(公告)号：US20070292978A1
公开(公告)日：2007-12-20
申请号：US11490050
申请日：2006-07-21
申请人： Li-Shei Yeh , Bor-Jen Wu , Chien-An Chen , Hsiao-Ping Chiu
发明人： Li-Shei Yeh , Bor-Jen Wu , Chien-An Chen , Hsiao-Ping Chiu
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of LED epitaxial areas. Then, a first transparent conductive layer, a metal reflective layer, and a first metal bonding layer are sequentially formed on the plurality of LED epitaxial areas and then part of the first transparent conductive layer, the metal reflective layer, and the first metal bonding layer are removed. Next, a permanent substrate is provided. At least a metal layer and a second metal bonding layer are formed on the permanent substrate. Then, part of at least the metal layer and the second metal bonding layer are removed. Next, the provisional substrate is bonded to the permanent substrate by aligned wafer bonding method. Then, the provisional substrate is removed to expose a surface of the LED epitaxial layer and then an n-type electrode is formed on the surface. Next, the permanent substrate is cut to form a plurality of LED devices.
摘要翻译：本文公开了一种用于制造GaN LED器件的方法。首先，在临时衬底上形成LED外延层。 LED外延层的一部分被去除以形成多个LED外延区域。然后，在多个LED外延区域依次形成第一透明导电层，金属反射层和第一金属接合层，然后将第一透明导电层，金属反射层和第一金属接合层被删除。接下来，提供永久性基板。至少在永久性基板上形成金属层和第二金属结合层。然后，去除至少金属层和第二金属结合层的一部分。接下来，通过对准的晶片接合方法将临时衬底结合到永久衬底。然后，除去临时衬底以露出LED外延层的表面，然后在表面上形成n型电极。接下来，切割永久性基板以形成多个LED器件。

10. 发明授权

US06555405B2 Method for forming a semiconductor device having a metal substrate 失效
标题翻译：用于形成具有金属基板的半导体器件的方法
公开(公告)号：US06555405B2
公开(公告)日：2003-04-29
申请号：US09933642
申请日：2001-08-21
申请人： Nai-Chuan Chen , Bor-Jen Wu , Yuan-Hsin Tzou , Nae-Guann Yih , Chien-An Chen
发明人： Nai-Chuan Chen , Bor-Jen Wu , Yuan-Hsin Tzou , Nae-Guann Yih , Chien-An Chen
IPC分类号： H01L2120
CPC分类号： H01L21/6835 , H01L33/0079 , H01L33/641 , H01L2933/0075 , Y10S438/977
摘要： The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.
摘要翻译：本发明提供一种用金属基板形成半导体器件的方法。该方法包括提供至少一个半导体衬底; 在所述半导体衬底上形成至少一个半导体层; 在半导体衬底上形成金属衬底，然后去除半导体衬底。金属基板具有高导热性和高导电性的优点，可以提高半导体器件的可靠性和寿命。

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